# RECTIFIER, 2.2KV, 30A, TO-263

![Product image](https://novapart.co/image/farnell:3771220/)

**URL**: https://novapart.co/products/DNA30E2200PZ-TRL/rectifier-22kv-30a-to-263
**SKU**: DNA30E2200PZ-TRL
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Standard Recovery Rectifier Diodes
**Price**: €3.1500
**Stock**: 500+
**Lead Time**: 144 days (indicative)

## Description

Repetitive Peak Reverse Voltage:2.2kV; Average Forward Current:30A; Diode Configuration:Single; Forward Voltage Max:1.26V; Reverse Recovery Time:-; Forward Surge Current 02AH9700

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Diode Case Style | TO-263 (D2PAK) |
| Diode Configuration | Single |
| Forward Voltage Max | 1.26V |
| Forward Surge Current | 400A |
| Reverse Recovery Time | - |
| Average Forward Current | 30A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 2.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3771220/)

## **DNA30E2200PZ** 

## **High Voltage Standard Rectifier** 

**VRRM** _**=**_ **2200 V I FAV** _**=**_ **30 A VF** _**=**_ **1.24 V** 

## Single Diode 

## **Part number** 

## **DNA30E2200PZ** 

_Marking on Product:  DNA30E2200PZ_ 

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Backside: anode<br>**----- End of picture text -----**<br>


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1 3<br>**----- End of picture text -----**<br>


## **Features / Advantages:** 

- Planar passivated chips 

- Very low leakage current 

- Very low forward voltage drop 

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Package: TO-263 (D2Pak-HV)<br>**----- End of picture text -----**<br>


## **Applications:** 

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● Diode for main rectification ● Industry standard outline<br>● For single and three phase ● RoHS compliant<br>   bridge configurations ● Epoxy meets UL 94V-0<br>**----- End of picture text -----**<br>


- Improved thermal behaviour 

## **Disclaimer Notice** 

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20190212e 

© 2019 IXYS all rights reserved 

**DNA30E2200PZ** 

|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|**Ratings**<br>**Rectifier**|
|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**||**min.**|**typ.**|**max.**|**Unit**|
|**VRSM**<br>_max. non-repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||2300|V|
|**VRRM**<br>_max. repetitive reverse blocking voltage_<br>T    =   25°C<br>VJ||||2200|V|
|**IR**<br>_reverse current_|V    =          V<br>R<br>T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>V    =          V<br>R<br>2200<br>150<br>2200|||40<br>1.5|mA<br>µA|
|**VF**<br>_forward voltage drop_|T    =   25°C<br>VJ<br>I  =          A<br>F<br>30<br>I  =          A<br>F<br>60|||1.26<br>1.53|V<br>V|
||T    =       °C<br>VJ<br>I  =          A<br>F<br>30<br>I  =          A<br>F<br>60<br>150|||1.24<br>1.63|V<br>V|
|**I**<br>**FAV**<br>_average forward current_|T  =       °C<br>C<br>140<br>T    =       °C<br>VJ<br>175<br>d =<br>rectangular<br>0.5|||30|A|
|**VF0**<br>T    =       °C<br>VJ<br>175<br>**rF**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||||0.83<br>13.4|V<br>mΩ|
|**R**<br>_thermal resistance junction to case_<br>**thJC**||||0.7|K/W|
|**R**<br>_thermal resistance case to heatsink_<br>**thCH**|||0.25||K/W|
|**Ptot**<br>_total power dissipation_|T    =   25°C<br>C|||210|W|
|**IFSM**<br>_max. forward surge current_|t =  10 ms; (50 Hz), sine<br>T    =   45°C<br>VJ<br>V    = 0 V<br>R<br>t = 8,3 ms; (60 Hz), sine|||370<br>400|A<br>A|
||T    =       °C<br>VJ<br>150<br>V    = 0 V<br>R<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|||315<br>340|A<br>A|
|**I²t**<br>_value for fusing_|T    =   45°C<br>V    = 0 V<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||685<br>665|A²s<br>A²s|
||T    =       °C<br>150<br>V    = 0 V<br>t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine<br>VJ<br>R|||495<br>480|A²s<br>A²s|
|**CJ**<br>_junction capacitance_|V  =          V;<br>700<br>T    =   25°C<br>f = 1 MHz<br>R<br>VJ||7||pF|



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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20190212e 

© 2019 IXYS all rights reserved 

**DNA30E2200PZ** 

|**Ratings**<br>**Package**<br>**TO-263 (D2Pak-HV)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak-HV)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak-HV)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak-HV)**|**Ratings**<br>**Package**<br>**TO-263 (D2Pak-HV)**|
|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**|
|**I RMS**<br>_RMS current_<br>per terminal|||35|A|
|**TVJ**<br>_virtual junction temperature_|-55||175|°C|
|**Top**<br>_operation temperature_|-55||150|°C|
|**Tstg**<br>_storage temperature_|-55||150|°C|
|**Weight**||1.5||g|
|**FC**<br>_mounting force with clip_|20||60|N|
|**dSpp/App**<br>_creepage distance on surface | striking distance through air_<br>**dSpb/Apb**<br>_terminal to backside_<br>_terminal to terminal_|4.2||mm<br>mm||
||4.7||||



## Product Marking 

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Part No. XXXXXXXXX<br>Logo IXYS Zyyww<br>Assembly Line<br>Date Code 000000<br>Assembly Code<br>**----- End of picture text -----**<br>


## **Part description** 

- D = Diode N = High Voltage Standard Rectifier A = (>= 2000V) 

- 30 = Current Rating [A] E = Single Diode 

- 2200 = Reverse Voltage [V] PZ = TO-263AB (D2Pak) (2HV) 

|**Ordering**|**Ordering Number**<br>|**Ordering Number**<br>|**Marking on Product**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**|
|---|---|---|---|---|---|---|---|
|Standard|DNA30E2200PZ-TRL<br>||DNA30E2200PZ||Tape & Reel|800|514460|
|Alternativ|DNA30E2200PZ-TUB<br>e||DNA30E2200PZ||Tube|50|525361|
|||||||||
|||**Similar Part**|**Package**|**Voltage class**||||
|||DNA30EM2200PZ|TO-263AB(D2Pak) (2HV)|2200||||
|||DNA30E2200PA|TO-220AC|2200||||
|||DNA30E2200FE|i4-Pac(2HV)|2200||||
|||DNA30E2200IY|TO-262(I2Pak) (2HV)|2200||||



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>175 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20190212e 

© 2019 IXYS all rights reserved 

**DNA30E2200PZ** 

## **Outlines TO-263 (D2Pak-HV)** 

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Millimeter Inches<br>Dim.<br>min max min max<br>A 4.06 4.83 0.160 0.190<br>A1 typ. 0.10 typ. 0.004<br>W<br>A A2 2.41 0.095<br>c2 Supplier� b 0.51 0.99 0.020 0.039<br>Option b2 1.14 1.40 0.045 0.055<br>E<br>c 0.40 0.74 0.016 0.029<br>c2 1.14 1.40 0.045 0.055<br>D 8.38 9.40 0.330 0.370<br>A1 D1 8.00 8.89 0.315 0.350<br>D2 2.3 0.091<br>4 E 9.65 10.41 0.380 0.410<br>1 3 E1 6.22 8.50 0.245 0.335<br>A2 e 2,54 BSC 0,100 BSC<br>e1 4.28 0.169<br>e1<br>H 14.61 15.88 0.575 0.625<br>c L 1.78 2.79 0.070 0.110<br>2x e 2x b2 2x b L1 1.02 1.68 0.040 0.066<br>typ. typ.<br>10.92 W 0.040 0.002<br>(0.430) mm (Inches) E1 0.02 0.0008<br>All dimensions conform with<br>and/or within JEDEC standard.<br>1.78<br>(0.07)<br>2.54 (0.100) Recommended min. foot print<br>L1<br>D1<br>D<br>H<br>2<br>D<br>L<br>9.02<br>(0.355)<br>3.81<br>(0.150)<br>3.05<br>(0.120)<br>**----- End of picture text -----**<br>


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1 3<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20190212e 

© 2019 IXYS all rights reserved 

**DNA30E2200PZ** 

## **Rectifier** 

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**----- Start of picture text -----**<br>
60 300 10 [3]<br>V R  = 0 V<br>TVJ = 45°C<br>40 250 TVJ = 45°C<br>IF IFSM I [2] t<br>[A] [A]<br>20 200 TVJ = 150°C [A [2] s] TVJ = 150°C<br>TVJ = 150°C<br>TVJ = 125°C<br>TVJ = 25°C 50 Hz, 80% VRRM<br>0 150 10 [2]<br>0.5 1.0 1.5 2.0 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910<br>VF [V] t [s] t [ms]<br>Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I [2] t versus time per diode<br>voltage drop per diode<br>50 40<br>R =<br>thKA<br>0.6 K/W<br>40 dc = 0.8 K/W<br>1 1.0 K/W 30<br>0.5 2.0 K/W<br>dc =<br>0.4 4.0 K/W<br>30 0.33 8.0 K/W IF(AV)M 1 0.5<br>0.17<br>Ptot 0.08 20 0.4<br>0.33<br>20 [A] 0.17<br>[W] 0.08<br>10<br>10<br>0 0<br>0 10 20 30 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>IF(AV)M [A] Tamb [[°C]] TC [°C]<br>Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current versus<br>case temperature<br>0.8<br>0.6<br>Constants for ZthJC calculation:<br>ZthJC i Rthi (K/W) ti (s)<br>0.4 1 0.03 0.0003<br>2 0.072 0.0065<br>[K/W ]<br>3 0.131 0.027<br>0.2 4 0.367 0.105<br>5 0.1 0.8<br>0.0<br>1 10 100 1000 10000<br>t [ms]<br>Fig. 6 Transient thermal impedance junction to case<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20190212e 

© 2019 IXYS all rights reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/DNA30E2200PZ-TRL/rectifier-22kv-30a-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/dna30e2200pz-trl/rectifier-2-2kv-30a-to-263/dp/3771220)
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