# Power MOSFET, N Channel, 450 V, 100 mA, 60 ohm, SOT-89, Surface Mount
**URL**: https://novapart.co/products/DN3145N8-G/power-mosfet-n-channel-450-v-100-ma-60-ohm-sot-89
**SKU**: DN3145N8-G
**Manufacturer**: MICROCHIP
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4650
**Stock**: 10+
**Lead Time**: 57 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:450V; On Resistance Rds(on):60ohm; Rds(on) Test Voltage Vgs:0V; Threshold Voltage Vgs:-; Powe
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 0V |
| Transistor Case Style | SOT-89 |
| Drain Source Voltage Vds | 450V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100mA |
| Drain Source On State Resistance | 60ohm |
| Gate Source Threshold Voltage Max | - |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2450514RL/)
_**Su ertex inc. p**_
**DN3145**
## **N-Channel Depletion-Mode Vertical DMOS FETs**
## **Features**
- High input impedance
- Low input capacitance
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage
## **Applications**
## **General Description**
The Supertex DN3145 is a depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
- Normally-on switches
- Solid state relays
- Converters
- Constant current sources
- Power supply circuits
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
- Telecom
**Ordering Information Product Summary Part Number Package Option Packing BV /BV RDS(ON) IDSS** DN3145N8-G TO-243AA (SOT-89) 2000/Reel **DSX DGX (max) (min)** ~~—~~ _-G denotes a lead (Pb)-free / RoHS compliant package._ 450V 60Ω 120mA _Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant._ **Absolute Maximum Ratings Pin Configuration Parameter Value DRAIN** Drain-to-source voltage BVDSX Drain-to-gate voltage BVDGX **SOURCE** Gate-to-source voltage ±20V **DRAIN** Operating and storage **GATE** -55[O] C to +150[O] C ~~—e~~ temperature **TO-243AA (SOT-89)** _Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground._ **Product Marking**
W = Code for week sealed **Typical Thermal Resistance DN1MW** = “Green” Packaging **Package** _**θja** Package may or may not include the following marks: Si or_ ~~—=<—<~~ TO-243AA (SOT-89) 133[O] C/W _**[‡]**_ **TO-243AA (SOT-89)** Ct: _**Notes:**_
_‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm._
_**Supertex inc.**_
_Doc.# DSFP-DN3145 A062713_
_**www.supertex.com**_
**DN3145**
## **Thermal Characteristics**
**==> picture [543 x 46] intentionally omitted <==**
**----- Start of picture text -----**
Package (continuous)ID [†] (pulsed)ID Power Dissipation@TA = 25 [O] C IDR † IDRM
TO-243AA 100mA 300mA 1.3W [‡] 100mA 300mA
**----- End of picture text -----**
## _**Notes:**_
- _ID (continuous) is limited by max rated Tj._
- _Mounted on FR4 board, 25mm x 25mm x 1.57mm._
## **Electrical Characteristics** _(TA = 25[O] C unless otherwise specified)_
**==> picture [542 x 342] intentionally omitted <==**
**----- Start of picture text -----**
Sym Parameter Min Typ Max Units Conditions
BVDSX Drain-to-source breakdown voltage 450 - - V VGS = -5.0V, ID = 100µA
VGS(OFF) Gate-to-source off voltage -1.5 - -3.5 V VDS = 15V, ID = 10µA
ΔVGS(OFF) Change in VGS(OFF) with temperature - - -4.5 mV/ [O] C VDS = 15V, ID = 10µA
IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V
- - 1.0 µA VDS = Max rating, VGS = -5.0V
ID(OFF) Drain-to-source leakage current - - 1.0 mA VDS = 0.8 Max Rating,
VGS = -5.0V, TA = 125 [O] C
IDSS Saturated drain-to-source current 120 - - mA VGS = 0V, VDS = 15V
Static drain-to-source on-state
RDS(ON) resistance - - 60 Ω VGS = 0V, ID = 100mA
ΔRDS(ON) Change in RDS(ON) with temperature - - 1.1 %/ [O] C VGS = 0V, ID = 100mA
GFS Forward transconductance 140 - - mmho VDS = 10V, ID = 100mA
CISS Input capacitance - - 120 VGS = -5.0V,
COSS Common source output capacitance - - 15 pF VDS = 25V,
CRSS Reverse transfer capacitance - - 10 f = 1.0MHz
td(ON) Turn-on delay time - - 10
t Rise time - - 15 VDD = 25V,
td(OFF)r Turn-off delay time - - 20 ns RID = 100mA,GEN = 25Ω,
t Fall time - - 35
f
VSD Diode forward voltage drop - - 1.8 V VGS = -5.0V, ISD = 100mA
trr Reverse recovery time - 800 - ns VGS = -5.0V, ISD = 100mA
**----- End of picture text -----**
## _**Notes:**_
_1. All D.C. parameters 100% tested at 25[O] C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)_
_2. All A.C. parameters sample tested._
## **Switching Waveforms and Test Circuit**
**==> picture [524 x 138] intentionally omitted <==**
**----- Start of picture text -----**
0V 90% VDD
INPUT Pulse R
10% Generator L
-10V OUTPUT
t t
(ON) (OFF) R
GEN
td(ON) tr td(OFF) tf
VDD INPUT D.U.T.
10% 10%
OUTPUT
0V 90% 90%
**----- End of picture text -----**
_**Supertex inc.**_
_Doc.# DSFP-DN3145 A062713_
_**www.supertex.com**_
2
**DN3145**
## **3-Lead TO-243AA (SOT-89) Package Outline (N8)**
**==> picture [217 x 195] intentionally omitted <==**
**----- Start of picture text -----**
D
D1
E H
1 2 3
L
b b1
e
e1
**----- End of picture text -----**
**==> picture [85 x 162] intentionally omitted <==**
**----- Start of picture text -----**
C
E1
A
**----- End of picture text -----**
## **Top View**
## **Side View**
**==> picture [542 x 74] intentionally omitted <==**
**----- Start of picture text -----**
Symbol A b b1 C D D1 E E1 e e1 H L
MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 [†] 3.94 0.73 [†]
Dimensions 1.50 3.00
NOM - - - - - - - - - -
(mm) BSC BSC
MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20
**----- End of picture text -----**
_JEDEC Registration TO-243, Variation AA, Issue C, July 1986._ _**†** This dimension differs from the JEDEC drawing_ _**Drawings not to scale** ._
_**Supertex Doc. #:** DSPD-3TO243AAN8, Version F111010._
_(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.)_
_**Supertex inc.**_ does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” _**Supertex inc.**_ does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the _**Supertex inc.**_ (website: http//www.supertex.com)
> ©2013 _**Supertex inc.**_ All rights reserved. Unauthorized use or reproduction is prohibited.
_**Supertex inc.**_ 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 _**www.supertex.com**_
_Doc.# DSFP-DN3145 A062713_
3
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- [Supplier page](https://es.farnell.com/microchip/dn3145n8-g/mosfet-n-ch-450v-0-1a-sot-89-3/dp/2450514RL)
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