# Power MOSFET, N Channel, 80 V, 0.018 ohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3702821RL/)

**URL**: https://novapart.co/products/DMTH8028LPSWQ-13/power-mosfet-n-channel-80-v-0018-ohm-powerdi-5060
**SKU**: DMTH8028LPSWQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1680
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 3.9W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 3.9W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.018ohm |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | - |
| Drain Source On State Resistance | 0.018ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3702821RL/)

**Green** a) 

**DMTH8028LPSWQ Green** Sd **80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID **<br>**TC = +25°C**|
|80V|25mΩ@VGS= 10V|41.7A|
||41mΩ@VGS= 4.5V|32.5A|



## **Features** 

- 100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application 

- High Conversion Efficiency 

- Low Input Capacitance 

- Fast Switching Speed 

- Wettable Flank for Improved Optical Inspection 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DMTH8028LPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: 

## **Mechanical Data** 

   - Case: PowerDI[®] 5060-8 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Synchronous Rectifiers 

- Backlighting 

- Power Management Functions 

   - Terminal Finish — Matte Tin Annealed over Copper Lead-Frame; Solderable per MIL-STD-202, Method 208 

   - Weight: 0.097 grams (Approximate) 

- DC-DC Converters 

**PowerDI5060-8 (SWP) (Type UX)** 

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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMTH8028LPSWQ-13|PowerDI5060-8(SWP) (Type UX)|2,500 / Tape & Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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## **Marking Information** 

## **PowerDI5060-8 (SWP) (Type UX)** 

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D D D D<br>; .<br>TH8028LSW<br>YY WW<br>S S S G<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking TH8028LSW = Product Type Marking Code ~~2~~ YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|80|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current, VGS= 10V (Note 6)|TC= +25°C<br>TC= +100°C|ID|41.7<br>29.5|A|
|Pulsed Drain Current (10µs Pulse, DutyCycle = 1%)||IDM|166.8|A|
|Maximum Continuous BodyDiode Forward Current (Note 6)||IS|41|A|
|Pulsed BodyDiode Forward Current (10µs Pulse, DutyCycle = 1%)||ISM|166.8|A|
|Avalanche Current, L = 0.3mH (Note 9)||IAS|12.5|A|
|Avalanche Energy, L = 0.3mH(Note 9)||EAS|23.4|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|3.9|W|
|Thermal Resistance, Junction to Ambient (Note 5)||RJA|38|°C/W|
|Total Power Dissipation (Note 6)|TC= +25°C|PD|65|W|
|Thermal Resistance, Junction to Case (Note 6)||RJC|2.3|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

6. Thermal resistance from junction to soldering point (on the exposed drain pad). 

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**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~GC~~|**Symbol**<br>~~GC~~|**Min**<br>~~GC~~|**Typ **<br>~~GC~~|**Max**<br>~~GC~~|**Unit**<br>~~GC~~|**Test Condition**<br>~~GC~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~PT~~|||||||
|Drain-Source Breakdown Voltage|BVDSS|80|—<br>~~OO~~|—<br>~~OO~~|V<br>~~OO~~|VGS= 0V, ID= 1mA|
|Zero Gate Voltage Drain Current<br>~~GO~~|IDSS<br>~~GO~~|—<br>~~GO~~|—<br>~~GO~~<br>~~OO~~<br>~~CO~~|1<br>~~GO~~<br>~~OO~~<br>~~CO~~|μA<br>~~GO~~<br>~~OO~~<br>~~CO~~|VDS= 64V, VGS= 0V<br>~~GO~~|
|Gate-Source Leakage<br>~~Ge~~|IGSS<br>~~Ge~~|—<br>~~Ge~~|—<br>~~OO~~<br>~~Ge~~<br>~~CO~~|±100<br>~~OO~~<br>~~Ge~~<br>~~CO~~|nA<br>~~OO~~<br>~~Ge~~<br>~~CO~~|VGS= ±20V, VDS= 0V<br>~~Ge~~|
|**ON CHARACTERISTICS(Note 7) **<br>~~CO~~<br>~~Re~~|||||||
|Gate Threshold Voltage|VGS(TH)<br>~~er~~|1.3<br>~~er~~|—<br>~~ee ee~~|2.5<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 250μA<br>~~eee~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~a~~<br>~~er~~|—<br>~~a~~<br>~~er~~|18<br>~~a~~<br>~~ee ee~~|25<br>~~a~~<br>~~ee~~|mΩ<br>~~a~~<br>~~ee~~|VGS= 10V, ID= 5A<br>~~a~~<br>~~eee~~|
|||—<br>~~a~~<br>~~er~~|28<br>~~a~~<br>~~ee ee~~|41<br>~~a~~<br>~~ee~~||VGS= 4.5V, ID= 4.5A<br>~~a~~<br>~~eee~~|
|Diode Forward Voltage|VSD<br>~~er~~|—<br>~~er ~~|0.8<br> ~~ee ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V, IS= 5A<br>~~eee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~PT~~|||||||
|Input Capacitance<br>~~GO~~|Ciss<br>~~GO~~|—<br>~~GO~~|641<br>~~GO~~|—<br>~~GO~~|pF<br>~~GO~~|VDS= 25V, VGS= 0V,<br>f = 1.0MHz|
|Output Capacitance|Coss|—|272|—|||
|Reverse Transfer Capacitance|Crss|—|32|—<br>~~GO~~|||
|Gate Resistance<br>~~GO~~|Rg<br>~~GO~~|—<br>~~GO~~|1.4<br>~~GO~~|—<br>~~GO~~<br>~~GO~~|Ω<br>~~GO~~<br>~~GO~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~GO~~|
|Total Gate Charge(VGS= 4.5V)|Qg|—|5.4|—<br>~~GO~~|nC<br>~~GO~~|VDS= 40V, ID= 7.5A|
|Total Gate Charge(VGS= 10V)|Qg|—|10.4|—|||
|Gate-Source Charge<br>~~a~~|Qgs<br>~~a~~|—<br>~~a~~|1.8<br>~~a~~|—<br>~~a~~|||
|Gate-Drain Charge<br>~~eC~~|Qgd<br>~~eC~~|—<br>~~eC~~|2.4<br>~~eC~~|—<br>~~eC~~|||
|Turn-On DelayTime|tD(ON)|—|11.3|—|ns|VDD= 40V, VGS= 4.5V,<br>RG = 2.7Ω, ID = 10A|
|Turn-On Rise Time<br>~~GO~~|tR<br>~~GO~~|—<br>~~GO~~|14.3<br>~~GO~~|—<br>~~GO~~|||
|Turn-Off Delay Time<br>~~a~~|tD(OFF)<br>~~a~~|—<br>~~a~~|10.8<br>~~a~~|—<br>~~a~~|||
|Turn-Off Fall Time<br>~~a~~|tF<br>~~a~~|—<br>~~a~~|8.3<br>~~a~~|—<br>~~a~~|||
|BodyDiode Reverse RecoveryTime|tRR|—|25.5|—|ns|IF= 7.5A, di/dt = 100A/μs|
|BodyDiode Reverse RecoveryCharge<br>~~a~~|QRR<br>~~a~~|—<br>~~a~~|20.6<br>~~a~~|—<br>~~a~~|nC||



- Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

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30<br>25.0<br>VDS = 5V<br>VGS = 10.0V 25<br>20.0 ae f e<br>VGS = 4.5V<br>VGS = 4.0V<br>20<br>15.0 | / — f e<br>15<br>10.0 WY ee TJ = 175℃ ee<br>10<br>VGS = 2.8V a VGS = 3.5V ee TJ = 150℃ e ie<br>5.0 VGS = 3.3V 5 TJ = 125℃ TJ = 25TJ = 85℃ ℃<br>VGS = 3.0V TJ = -55℃<br>0.0 ——\——_— 0 Vim<br>0 0.5 1 1.5 2 2.5 3 1 2 3 4 5 6<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.04 0.1<br>0.035 ToT 0.09 OCC COCO<br>0.08<br>0.03<br>VGS = 4.5V 0.07<br>0.025 a p SAIC EE<br>0.06 COE EEE<br>ID = 5A<br>0.02 0.05<br>0.015 VGS = 10V 0.04<br>0.03<br>0.01 oo CELE<br>0.02<br>0.005 fn CONSE CEC<br>0.01<br>ID = 4A<br>0<br>0<br>0 pt 5 10 i 15 tt 20 ft 25 30 aCE CCE<br>0 2 4 6 8 10 12 14 16 18 20<br>Figure 3. Typical On-Resistance vs. Drain Current and ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.045 2.2<br>VGS = 10V TJ = 175℃<br>0.04 a 2 TTT<br>0.035<br>= TJ = 150℃ 1.8 TT VGS = 10V, I  LT D = 5A T<br>0.03<br>TJ = 125℃ 1.6 Oy<br>0.025 SS eS a<br>TJ = 85℃ 1.4<br>0.02 a SERRE Zen<br>0.015 S S TJ = 25℃ 1.2 COTA<br>1 VGS = 4.5V, ID = 4.5A<br>0.01 TJ = -55℃<br>0.005 rree 0.8 ae Zs<br>e e |<br>0 0.6 AT ELEEL ES<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>Figure 5. Typical On-Resistance vs. Drain Current ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>and Temperature Figure 6. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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0.06<br>0.05<br>0.04 LET VGS = 4.5V, ID = 4.5A  LITLEan<br>0.03<br>0.02 BED ABE<br>a rt VGS = 10V, ID = 5A<br>0.01<br>0 FEAR<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Junction<br>Temperature<br>30<br>VGS = 0V<br>25<br>eee |<br>20 eee|<br>||<br>15 H<br>eee [|]<br>10 TJ = 150 [o] C<br>[ag<br>TJ = 125 [o] C<br>5 TJ = 85 [o] C<br>TJ = 175 [o] C TJ = 25 [o] C<br>TJ = -55 [o] C<br>0 7)<br>LL)<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current<br>10<br>8<br>6<br>4<br>VDS = 40V, ID = 7.5A<br>2<br>0<br>0 2 4 6 8 10 12<br>Qg (nC)<br>Figure 11. Gate Charge<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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3<br>2.5<br>ID = 1mA<br>2 Be SSe ||<br>1.5<br>ID = 250μA<br>1 OS S<br>et ELEELRS<br>0.5<br>0 EEE<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>1000<br>Ciss<br>= = =<br>100 Nee<br>CO L Coss ES<br>SS a ee<br>ee<br>10<br>{|<br>Crss<br>f = 1MHz<br>1 PE | N t<br>=<br>0 10 20 30 40 50 60 70 80<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>1000<br>RDS(ON) PW = 1µs<br>Limited<br>100<br>10<br>PW = 10µs<br>PW = 100µs<br>1<br>Ff tt 7 SY!<br>PW = 1ms<br>TJ(Max) = 175 ℃ fo PW = 10ms<br>0.1 TSingle PulseC = 25 ℃ ma PW = 100ms                        |<br>DUT on Infinite  PW = 1s<br>Heatsink<br>ee<br>VGS = 10V a ee i<br>0.01<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>eee a<br>tetera<br>D=0.7<br>e ae s  > eS eeePE<br>D=0.5<br>Yee taht|<br>Se D=0.3 MA EE LTA AA RAE TEI TTP TAA TE<br>D=0.9 UIE ETT TIT TIT TTTETTT<br>i ea eae ame a RE<br>0.1 eat E a D=0.1 E<br>| | pe | T P)<br>—<any/a, siA D=0.05 CHICCCAHTE<br>AfA A<br>J Mii D=0.02 CETTE LEME LEE CEI, ETI EIT El<br>D=0.01<br>Y/ THai D=0.005 STATO TAT TTIITE-TMT ETTETTIT TTTITTATTITE- TT<br>D=Single Pulse<br>0.01<br>Te ee<br>PoEPe)<br>a re a ee<br>08<br>PTE TIE TIE mail|<br>RθJC (t) = r(t) * RθJC<br>RθJC = 2.3℃/W<br>Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5060-8 (SWP) (Type UX)** 

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D<br>D1<br>PowerDI5060-8 (SWP)<br>(Type UX)<br>Dim  Min  Max  Typ<br>———— A  0.90 1.10 1.00<br>A1  0 0.05 --<br>E1 E A1 b 0.30 0.50 0.41<br>1.900 fo 1.400 b c Seating Plane ==== b2  0.20 0.35 0.25<br>b4  0.25REF<br>e c  0.230 0.330 0.277<br>D  5.15 BSC<br>1 D1  4.70 5.10 4.90<br>D2  3.56 3.96 3.76<br>Ø 1.000 Depth 0.07± 0.030 D2a 3.78 4.18 3.98<br>DETAIL A<br>b(8x) E  6.40 BSC<br>e/2 E1  5.60 6.00 5.80<br>1<br>E2  3.46 3.86 3.66<br>L<br>E2a 4.195 4.595 4.395<br>D2a k e 1.27BSC<br>k  1.05 --  --<br>Ese ====<br>L  0.635 0.835 0.735<br>La  0.635 0.835 0.735<br>A<br>E2 D2 L4 L1  0.200 0.400 0.300<br>M L1a 0.050REF<br>L4  0.025 0.225 0.125<br>DETAIL A M  3.205 4.005 3.605<br>La θ  10°  12°  11°<br>θ1  6°  8°  7°<br>r innenin b4(8x) L1 SN GEES-—_t__l_I__ All Dimensions in mm<br>0(4x)<br>01(4x)<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8 (SWP) (Type UX)** 

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X2<br>Y1<br>Y2<br>Y3<br>G1 X1<br>0000. Y C X (8x)<br>G<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|**()**<br>1.270|
|**G**|0.660|
|**G1**|0.820|
|**X**|0.610|
|**X1**|4.100|
|**X2**|4.420|
|**Y**|1.270|
|**Y1**|1.020|
|**Y2**|3.810|
|**Y3**|6.610|



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## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

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5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2020 Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMTH8028LPSWQ Document number: DS42280 Rev. 2 - 2 

December 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH8028LPSWQ-13/power-mosfet-n-channel-80-v-0018-ohm-powerdi-5060)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth8028lpswq-13/mosfet-n-ch-80v-powerdi-5060/dp/3702821RL)
---

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