# Power MOSFET, N Channel, 80 V, 70 A, 5300 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3589221/)

**URL**: https://novapart.co/products/DMTH8008LFG-7/power-mosfet-n-channel-80-v-70-a-5300-ohm-powerdi
**SKU**: DMTH8008LFG-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4050
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 50W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 70A |
| Drain Source On State Resistance | 5300µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3589221/)

@ **Green** 

## **DMTH8008LFG** @ **Green** 7 **80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|---|---|---|
|80V|6.9mΩ @ VGS= 10V|70A|
||10.4mΩ @ VGS= 4.5V|57A|



## **Features and Benefits** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- Low RDS(ON) – Ensures On-State Losses are Minimized 

- Excellent Qgd × RDS(ON) Product (FOM) 

- Advanced Technology for DC-DC Converters 

- Small Form Factor Thermally Efficient Package Enables Higher Density End Products 

- Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 

- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at -** 

- **https://www.diodes.com/products/automotive/automotive products/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

## **Mechanical Data** 

- Case: PowerDI[®] 3333-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

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 Terminal Finish – Matte Tin Annealed over Copper Leadframe.<br>Solderable per MIL-STD-202, Method 208<br> Weight: 0.072 grams (Approximate)<br>D<br>PowerDI3333-8<br>S Pin 1 1 8<br>S<br>S<br>G 2 7<br>G<br>3 6<br>D<br>D<br>eos D D 4 5 (&<br>S<br>Top View<br>Top View  Bottom View  Pin-Out  Equivalent Circuit<br>Ordering Information (Note 4)<br>Part Number Case Packaging<br>DMTH8008LFG-7  PowerDI3333-8 2000/Tape & Reel<br>DMTH8008LFG-13  PowerDI3333-8  3000/Tape & Reel<br>**----- End of picture text -----**<br>


Notes: 

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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HX8<br>YYWW<br>**----- End of picture text -----**<br>


HX8 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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DMTH8008LFG Document number: DS41439 Rev. 2 - 2 

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**DMTH8008LFG** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|80|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= 10V|TC= +25°C<br>TC= +100°C|ID|70<br>49|A|
|Continuous Drain Current (Note 6) VGS= 10V|TA= +25°C<br>TA= +100°C|ID|17<br>12|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)||IS|17|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)||IDM|280|A|
|Pulsed BodyDiode Forward Current(10μs Pulse,DutyCycle = 1%)||ISM|280|A|
|Avalanche Current,L = 1mH(Note 8)||IAS|18|A|
|Avalanche Energy,L = 1mH(Note 8)||EAS|162|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|1.2|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RJA|124|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|2.8|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RJA|53|°C/W|
|Total Power Dissipation(Note 7)|TC= +25°C|PD|50|W|
|Thermal Resistance,Junction to Case(Note 7)||RJC|3|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 9) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|80|—|—|V|VGS= 0V,ID= 1mA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|μA|VDS= 64V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 9)**<br>~~SEE~~|||||||
|Gate Threshold Voltage<br>~~SEE~~|VGS(TH)<br>~~SEE~~|1.2<br>~~SEE~~|—<br>~~SEE~~|2.5<br>~~SEE~~|V<br>~~SEE~~|VDS= VGS,ID= 1mA<br>~~SEE~~|
|Static Drain-Source On-Resistance<br>~~SEE~~|RDS(ON)<br>~~SEE~~|—<br>~~SEE~~|5.3<br>~~SEE~~|6.9<br>~~SEE~~|mΩ<br>~~SEE~~|VGS= 10V,ID= 20A<br>~~SEE~~|
|||—<br>~~SEE~~|7.9<br>~~SEE~~|10.4<br>~~SEE~~||VGS= 4.5V,ID= 10A<br>~~SEE~~|
|Diode Forward Voltage<br>~~SEE~~|VSD<br>~~SEE~~|—<br>~~SEE~~|0.8<br>~~SEE~~|1.2<br>~~SEE~~|V<br>~~SEE~~|VGS= 0V,IS= 20A<br>~~SEE~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~a~~<br>~~————~~<br>~~ee~~|||||||
|Input Capacitance<br>~~——~~<br>~~————~~|Ciss<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~|2254<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~ee~~|pF<br>~~——~~<br>~~ee~~|VDS= 40V, VGS= 0V,<br>f = 1MHz<br>~~——~~<br>~~ee~~|
|Output Capacitance<br>~~——~~<br>~~————~~|Coss<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~|745<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~——~~<br>~~————~~|Crss<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~|31<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~ee~~|||
|Gate Resistance<br>~~——~~<br>~~————~~|Rg<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~|1.98<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~ee~~|Ω<br>~~——~~<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~——~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~————~~|Qg<br>~~a~~|—<br>~~a~~|18.3<br>~~a~~|—<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~|VDS= 40V, ID= 14A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~————~~|Qg<br>~~a~~|—<br>~~a~~|37.7<br>~~a~~|—<br>~~ee~~|||
|Gate-Source Charge<br>~~————~~|Qgs<br>~~a~~|—<br>~~a~~|5.3<br>~~a~~|—<br>~~ee~~|||
|Gate-Drain Charge<br>~~————~~<br>~~—<——~~|Qgd<br>~~a~~|—<br>~~a~~|7.8<br>~~a~~|—<br>~~ee~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~————~~<br>~~—<——~~|tD(ON)<br>~~a~~|—<br>~~a~~|6.9<br>~~a~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~<br>~~EE~~|VDD= 40V, VGS= 10V,<br>ID= 14A, RG= 6Ω<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~<br>~~—<——~~|tR<br>~~a~~|—<br>~~a~~|12<br>~~a~~|—<br>~~ee~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—<——~~|tD(OFF)|—|37|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—<——~~|tF|—|21|—<br>~~ee~~<br>~~EE~~|||
|BodyDiode Reverse RecoveryTime<br>~~—<——~~<br>~~oo~~|tRR<br>~~oo~~|—<br>~~oo~~|42<br>~~oo~~|—<br>~~ee~~<br>~~oo~~<br>~~EE~~|ns<br>~~ee~~<br>~~oo~~<br>~~EE~~|IS= 14A, di/dt = 100A/μs<br>~~ee~~<br>~~oo~~|
|BodyDiode Reverse RecoveryCharge<br>~~oo~~|QRR<br>~~oo~~|—<br>~~oo~~|53<br>~~oo~~|—<br>~~oo~~<br>~~EE~~|nC<br>~~oo~~<br>~~EE~~||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

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**DMTH8008LFG** 

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50.0 30<br>45.0 VGS VGS = 4.5V= 4.0V VDS = 5.0V<br>40.0 S VGS = 6.0V r 25 ene |e<br>VGS = 3.5V<br>35.0<br>eee 20 eens ae<br>30.0 VGS = 10V<br>25.0 | ( LA e ee 15 ian<br>VGS = 3.2V<br>20.0<br>10<br>15.0 {fo — — Senne) ine<br>10.0 VGS = 3.0V TJ = 175℃ TJ = 85℃<br>5.0 VGS = 2.6V VGS = 2.8V 5 TJT = 125J = 150℃℃ TTJ = -55J = 25℃℃<br>0.0 0<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.010 0.1<br>0.009<br>0.008 VGS = 4.5V 0.08<br>0.007 a AEE<br>0.006 0.06<br>0.005 Se es TTT<br>0.004 VGS = 10V 0.04<br>0.003 SS ID = 20A<br>0.002 0.02<br>ID = 10A<br>0.001<br>0.000 a 0<br>0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.016 2.4<br>0.014 VGS = 10V >Py 2.2 TTT TTT<br>2 VGS = 10V, ID = 20A<br>0.012 TJ = 150℃ TJ = 175℃ 1.8<br>0.01 ry Ry<br>1.6<br>J a Ao<br>0.008 TJ = 125℃ 1.4<br>SS 1.2 A<br>0.006 TJ = 85℃<br>1 VGS = 4.5V, ID = 10A<br>0.004 TJ = 25℃<br>e r 0.8 a e<br>0.002 SS TJ = -55℃ 0.6 a<br>0 TEE 0.4 PEELE EE<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with Temperature<br>and Temperature<br>, DRAIN CURRENT (A)<br>ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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## DIODES 

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0.02 3<br>2.8 ee<br>2.6 ee<br>2.4 ee<br>0.015<br>2.2<br>y mf | | | | | TT<br>2 oS<br>0.01 VGS = 4.5V, ID = 10A ne 1.81.6 e ID = 1mA<br>aaa oS ||<br>1.4 ID = 250μA<br>= 1.2 oe<br>0.005 1<br>_— a VGS = 10V, ID = 20A 0.8 e eN NG<br>0.6 a<br>0 aa 0.4 ee<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>30 10000<br>VGS = 0V rr Ciss f = 1MHz<br>25 U T a ee<br>1000 S=<br>20 q l ===2——8e<br>Coss<br>15 | 100 SSE  E ES<br>10 U N Crss<br>TJ = 175 [o] C } h 10 FF NS<br>TJ = 85 [o] C<br>5 TJ = 150 [o] C IIs S S<br>Hf | PS TJ = 25 [o] C ————<br>TJ = 125 [o] C TJ = -55 [o] C<br>0 LD) YY) } |} 1 aeeee<br>0 0.3 0.6 0.9 1.2 0 10 20 30 40 50 60 70 80<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10<br>1000<br>RDS(on)<br>Limited<br>8 =ea PW = 1µs SO<br>100<br>6<br>/ TORO DC ON NT<br>10 PW = 100ms<br>4 PW = 10ms<br>VDS = 40V, ID = 14A P W  = 1ms<br>2 rT 1 ECHR PW = 100µs TIPS<br>TTVJCGS(max = 25 = 10V)  = 175°C °C ~ a PW = 10 a µs NY<br>0 Single Pulse Foi NS<br>DUT on Infinite Heatsink<br>0 5 10 15 20 25 30 35 40 0.1 Il<br>Qg (nC) 0.1 1 10 100<br>Figure 11. Gate Charge VDS  DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>D<br>, DRAIN CURRENT (A)<br>I<br>**----- End of picture text -----**<br>


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BOB. Se<br>1<br>ic D=0.7 reeerm tt<br>D=0.5<br>ET otHEL eg ITTi tt ei<br>| D=0.3 erTT<br>0.1 U ate?eM D=0.9 0<br>EERE D=0.1 rg<br>Et<br>D=0.05<br>g a cei tt<br>aeA TT<br>a a<br>D=0.02<br>0.01<br>eeSO eeTLUT UTM LM LTT etLIE EA|<br>a a eee ee eee ect ee<br>D=0.01<br>| [eT] CAFy D=0.005 TIN OOukaEEE EE EEnt RθJA(t) = r(t) * RθJA THT[TTTal<br>D=Single Pulse RθJA = 47℃/W<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMTH8008LFG** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI3333-8<br>**----- End of picture text -----**<br>


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PowerDI3333-8<br>A1 A3 Dim  Min  Max  Typ<br>A A  0.75 0.85 0.80<br>Seating Plane A1  0.00 0.05 0.02<br>A3 —  —  0.203<br>Toca b 0.27  0.37  0.32<br>b2  0.15 0.25 0.20<br>D<br>D  3.25 3.35 3.30<br>L(4x)<br>D2 D2  2.22  2.32  2.27<br>1 E  3.25 3.35 3.30<br>E2  1.56 1.66 1.61<br>Pin #1 ID E3 0.79 0.89 0.84<br>b2(4x) E4 E4  1.60 1.70 1.65<br>e  —  —  0.65<br>dial === L  0.35 0.45 0.40<br>E<br>L1  —  —  0.39<br>E2 E3 z  —  —  0.515<br>All Dimensions in mm<br>L1(3x)<br>8<br>z(4x) b<br>e<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI3333-8** 

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X3<br>X2<br>8<br>Y4<br>Y1 X1<br>Y2<br>Y3<br>ca<br>Y<br>1<br>X ‘O00 C 7<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C  0.650<br>X  0.420<br>X1  0.420<br>X2  0.230<br>X3  2.370<br>Y  0.700<br>Y1  1.850<br>Y2  2.250<br>Y3  3.700<br>Y4  0.540<br>**----- End of picture text -----**<br>


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DMTH8008LFG Document number: DS41439 Rev. 2 - 2 

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**DMTH8008LFG** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMTH8008LFG Document number: DS41439 Rev. 2 - 2 

April 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH8008LFG-7/power-mosfet-n-channel-80-v-70-a-5300-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth8008lfg-7/mosfet-n-ch-80v-70a-powerdi-3333/dp/3589221)
---

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