# Power MOSFET, N Channel, 80 V, 100 A, 2800 µohm, PowerDI5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3405216RL/)

**URL**: https://novapart.co/products/DMTH8004LPS-13/power-mosfet-n-channel-80-v-100-a-2800-ohm
**SKU**: DMTH8004LPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8790
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI5060 |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 2800µohm |
| Gate Source Threshold Voltage Max | 2.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405216RL/)

**DMTH8004LPS Green** @, [ **80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID **<br>**TC = +25°C**<br>**(Note 11)**|
|80V|3.8mΩ @ VGS= 10V|100A|
||5.3mΩ @ VGS= 4.5V|100A|



## **Features** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On-State Losses 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in power management and load switch. 

## **Mechanical Data** 

   - Case: PowerDI[®] 5060-8 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC-DC Converters 

- Load Switch 

- Terminal Connections: See Diagram Below 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

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PowerDI5060-8<br>Pin1<br>Top View  Bottom View<br>**----- End of picture text -----**<br>


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S D<br>Pin1<br>S D<br>S D<br>G D<br>Top View<br>Bottom View  Internal Schematic  Pin Configuration<br> Information (Note 4)<br>Part Number Case Packaging<br>DMTH8004LPS-13  PowerDI5060-8  2,500/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

Notes: 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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D D D D<br>; "a / ——       = Manufacturer’s Marking<br>TH8004LPS YYWW = Date Code Marking<br>YY = Year (ex: 19 = 2019)<br>YY WW<br>WW = Week (01 to 53)<br>S S S G<br>**----- End of picture text -----**<br>


- TH8004LPS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 19 = 2019) WW = Week (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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DMTH8004LPS Document number: DS41437  Rev. 3 - 2 

December 2019 © Diodes Incorporated 

**DMTH8004LPS** 

## **Maximum Ratings** (@TC = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|80|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current, VGS= 10V (Note 7)|Steady<br>State|TC= +25°C<br>TC= +100°C<br>(Note 11)|ID|100<br>100|A|
|Maximum Continuous BodyDiode Forward Current(Note 7)|||IS|83|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|400|A|
|Pulsed BodyDiode Forward Current(10μs Pulse,DutyCycle = 1%)|||ISM|400|A|
|Avalanche Current,L = 0.3mH(Note 8)|||IAS|35|A|
|Avalanche Energy,L = 0.3mH(Note 8)|||EAS|183.7|mJ|



**Thermal Characteristics** (@TC = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|1.5|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|101|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|2.9|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|51|°C/W|
|Total Power Dissipation(Note 7)|TC= +25°C|PD|125|W|
|Thermal Resistance,Junction to Case(Note 7)||RθJC|1.2|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@TC = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 9) **|||||||
|Drain-Source Breakdown Voltage<br>~~——$=~~|BVDSS<br>~~——$=~~|80<br>~~——$=~~|—<br>~~——$=~~|—<br>~~——$=~~|V<br>~~——$=~~|VGS= 0V,ID= 1mA<br>~~——$=~~|
|Zero Gate Voltage Drain Current<br>~~——$=~~|IDSS<br>~~——$=~~|—<br>~~——$=~~|—<br>~~——$=~~|1<br>~~——$=~~|μA<br>~~——$=~~|VDS= 64V,VGS= 0V<br>~~——$=~~|
|Gate-Source Leakage<br>~~——$=~~|IGSS<br>~~——$=~~|—<br>~~——$=~~|—<br>~~——$=~~|±100<br>~~——$=~~|nA<br>~~——$=~~|VGS= ±20V,VDS= 0V<br>~~——$=~~|
|**ON CHARACTERISTICS(Note 9)**<br>~~——$=~~|||||||
|Gate Threshold Voltage<br>~~——$=~~|VGS(TH)<br>~~——$=~~|1.3<br>~~——$=~~|—<br>~~——$=~~|2.8<br>~~——$=~~|V<br>~~——$=~~|VDS= VGS,ID= 250μA<br>~~——$=~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|2.8<br>~~ee~~|3.8<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 20A<br>~~ee~~|
|||—<br>~~ee~~|3.9<br>~~ee~~|5.3<br>~~ee~~||VGS= 4.5V,ID= 20A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.8<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 20A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~a~~<br>~~—————~~<br>~~eee~~|||||||
|Input Capacitance<br>~~——~~<br>~~—————~~|Ciss<br>~~——~~|—<br>~~——~~<br>~~a~~|4979<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~<br>~~eee~~|pF<br>~~——~~<br>~~eee~~|VDS= 40V, VGS= 0V,<br>f = 1MHz<br>~~——~~<br>~~eee~~|
|Output Capacitance<br>~~——~~<br>~~—————~~|Coss<br>~~——~~|—<br>~~——~~<br>~~a~~|1166<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~<br>~~eee~~|||
|Reverse Transfer Capacitance<br>~~——~~<br>~~—————~~|Crss<br>~~——~~|—<br>~~——~~<br>~~a~~|71<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~<br>~~eee~~|||
|Gate Resistance<br>~~——~~<br>~~—————~~|RG<br>~~——~~|—<br>~~——~~<br>~~a~~|2.1<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~<br>~~eee~~|Ω<br>~~——~~<br>~~eee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~——~~<br>~~eee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~—————~~|QG|—<br>~~a~~|43<br>~~a~~|—<br>~~a~~<br>~~eee~~|nC<br>~~eee~~<br>~~fee~~|VDD= 40V, ID= 20A<br>~~eee~~<br>~~fee~~|
|Total Gate Charge(VGS= 10V)<br>~~—————~~|QG|—<br>~~a~~|81<br>~~a~~|—<br>~~a~~<br>~~eee~~|||
|Gate-Source Charge<br>~~—————~~|QGS|—<br>~~a~~|14<br>~~a~~|—<br>~~a~~<br>~~eee~~|||
|Gate-Drain Charge<br>~~—————~~<br>~~———~~|QGD|—<br>~~a~~|22<br>~~a~~<br>~~fee~~|—<br>~~a~~<br>~~eee~~<br>~~fee~~|||
|Turn-On DelayTime<br>~~—————~~<br>~~———~~|tD(ON)|—<br>~~a~~|8.5<br>~~a~~<br>~~fee~~|—<br>~~a~~<br>~~eee~~<br>~~fee~~|ns<br>~~eee~~<br>~~fee~~|VDD= 40V, VGS= 10V,<br>ID= 20A, RG= 1.6Ω<br>~~eee~~<br>~~fee~~|
|Turn-On Rise Time<br>~~—————~~<br>~~———~~|tR|—<br>~~a~~|11.8<br>~~a~~<br>~~fee~~|—<br>~~a~~<br>~~eee~~<br>~~fee~~|||
|Turn-Off DelayTime<br>~~———~~|tD(OFF)|—|55<br>~~fee~~|—<br>~~fee~~|||
|Turn-Off Fall Time<br>~~———~~|tF|—|27.7<br>~~fee~~|—<br>~~fee~~|||
|BodyDiode Reverse RecoveryTime<br>~~———~~<br>~~oe)~~|tRR<br>~~oe)~~|—<br>~~oe)~~|53<br>~~fee~~<br>~~oe)~~|—<br>~~fee~~<br>~~oe)~~|ns<br>~~fee~~<br>~~oe)~~|IF= 20A, di/dt = 100A/μs<br>~~fee~~<br>~~oe)~~|
|BodyDiode Reverse RecoveryCharge<br>~~oe)~~|QRR<br>~~oe)~~|—<br>~~oe)~~|91<br>~~oe)~~|—<br>~~oe)~~|nC<br>~~oe)~~||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

11. Package limited. 

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**DMTH8004LPS** 

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30.0<br>VGS = 3.2V<br>VGS = 3.5V<br>25.0 |<br>VGS = 4.0V<br>VGS = 4.5V<br>20.0<br>VGS = 5.0V<br>VGS = 3.0V<br>15.0 ——<br>po<br>VGS = 10V<br>10.0<br>VGS = 2.7V<br>5.0<br>VGS = 2.5V<br>0.0 [—— ——<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>0.006<br>0.005<br>FLEE LEE<br>0.004 VGS = 6.0V<br>E T T<br>0.003<br>aT<br>VGS = 10V<br>0.002<br>TL L L LL<br>0.001 PLE ELE<br>0.000 EL ELEEL EL<br>0 5 10 15 20 25 30 35 40 45 50<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>0.008<br>VGS = 10V<br>0.007<br>0.006 150℃ 175℃<br>SERRE<br>0.005<br>0.004 — —— 125℃<br>——<br>85℃<br>0.003 >T o<br>25℃<br>0.002<br>-55℃<br>0.001<br>0 Teeeete<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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30<br>VDS = 5.0V<br>25 eee |i<br>20<br>15 feeee |e<br>feeee |e<br>10<br>175℃ 85℃<br>5 150℃ 25℃<br>125℃ -55℃<br>0 >gf<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>0.015<br>0.0120.009 yyypyf<br>0.006<br>ID = 20A<br>0.003 Gn a<br>N O<br>0 -t_ EL<br>0 4 8 12 16 20<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.4<br>2.2<br>2<br>VGS = 10V, ID = 20A<br>1.8 Pf | | tt te yt<br>1.6<br>1.4 R EET,<br>NK<br>1.2 COCOAeee aCe<br>1<br>0.8 VGS = 4.5V, ID = 20A<br>0.6<br>O 0.4 e@###PFZ=_<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.008 3<br>2.8<br>0.007 PE LEE EE 2.6 aee<br>2.4<br>2.2<br>0.006 vA7 a<br>VGS = 4.5V, ID = 20A 4 2 ee ID = 1mA<br>0.005 KY 1.8 SS e e e<br>anne 1.6 EE<br>1.4<br>0.004 OK 1.2 O ID = 250μA E S<br>YAS 1 aa ~ee<br>0.003 eeaaa Oe 0.8 4 R SSK<br>0.6<br>0.002 aa — VGS = 10V, ID = 20A 0.4 A TTS<br>0.2<br>0.001 FEL EEL LEE 0 TEE a<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs.<br>JunctionTemperature<br>30 100000<br>VGS = 0V f = 1MHz<br>25 eee ee === Sa<br>10000 Ciss<br>20 A | 33—————See<br>1000<br>15 WL == Coss =<br>100<br>10 HN|} = —=— Crss ———<—_———<br>TA = 175 [o] C TA = 85 [o] C<br>5 TA = 150 [o] C AL} |S TA = 25 [o] C 10 e e<br>TA = 125 [o] C L,} | TA = -55 [o] C ———————————<br>0 DD) } } 1 a<br>0 0.3 0.6 0.9 1.2 0 20 40 60 80<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 1000<br>R<br>DS(ON)<br>Limited<br>8 100<br>PW = 1µs<br>6 10<br>PW = 10µs<br>PW = 100µs<br>4 1 PW = 1ms<br>LCS OT AORN<br>=o  E<br>TJ(Max) = 175 ℃ PW = 10ms<br>VDS = 40V, ID = 20A TC = 25 ℃ PW = 100ms<br>2 0.1 Single Pulse<br>DUT on Infinite  DC<br>Heatsink<br>0 0.01 VGS = 10V ee Il<br>0 10 20 30 40 50 60 70 80 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMTH8004LPS 

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Document number: DS41437  Rev. 3 - 2 

**DMTH8004LPS** 

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1<br>bap ee pn en OO<br>ET me re ttte<br>m D=0.7 eee<br>D=0.5<br>FH MTCRC era D=0.9 SeteTINTSee HINT CTTeS a at TTT<br>cll D=0.3 |UDLAA0  Ty  M AIMEE TAMECTETI TTI EINE TITLE<br>0.1 Sc D=0.1 sd,eW ZameenATTIE EI IIE ELIE LITE ELLIE<br>a /c<br>per| AM ETTT<br>AA D=0.05 I TECHIE<br>_ ST TT<br>S yr T TT<br>D=0.02<br>0.01<br>AA Cw AfHH D=0.01 CELTTEEETIE TT UT UT<br>FO SSETT<br>PA ot<br>TANG D=0.005 er Or crnCE TETTreeTTP)<br>D=Single Pulse<br>ET HEL EHT<br>RθJC (t) = r(t) * RθJC<br>e ae RθJC = 1.2℃/W<br>Duty Cycle, D = t1/t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMTH8004LPS Document number: DS41437  Rev. 3 - 2 

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**DMTH8004LPS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8** 

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PowerDI5060-8<br>D<br>Dim  Min  Max  Typ<br>D1 Detail A A  0.90 1.10 1.00<br>0 (4X) A1  0.00  0.05  <br>b 0.33 0.51  0.41<br>a c A1 —— b2  0.200 0.350 0.273<br>b3  0.40 0.80 0.60<br>E1 E c  0.230 0.330 0.277<br>aa e ESS= D  5.15 BSC<br>D1  4.70 5.10 4.90<br>D2  3.70 4.10 3.90<br>1 0 1 (4X) D3  3.90 4.30 4.10<br>E  6.15 BSC<br>b (8X) e/2 E1  5.60 6.00 5.80<br>E2  3.28 3.68 3.48<br>1<br>L b2 (4X) E3 3.99 4.39 4.19<br>e 1.27 BSC<br>D3 K<br>G  0.51  0.71  0.61<br>K  0.51  <br>A E3 E2 UP D2 ye b3 (4X) Eee L  0.51  0.71  0.61<br>ee! | ey M oa7a7 L1  0.100 0.200 0.175<br>M1 M  3.235 4.035 3.635<br>Detail A M1  1.00 1.40 1.21<br>Θ  10°  12°  11°<br>G L1<br>Θ1  6°  8°  7°<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8** 

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**==> picture [115 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions  Value (in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>X1  4.100<br>X2  0.755<br>X3  4.420<br>X4  5.610<br>Y  1.270<br>Y1  0.600<br>Y2  1.020<br>Y3  0.295<br>Y4  1.825<br>Y5  3.810<br>Y6  0.180<br>Y7  6.610<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMTH8004LPS Document number: DS41437  Rev. 3 - 2 

December 2019 © Diodes Incorporated 

**DMTH8004LPS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMTH8004LPS Document number: DS41437  Rev. 3 - 2 

December 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH8004LPS-13/power-mosfet-n-channel-80-v-100-a-2800-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth8004lps-13/mosfet-n-ch-80v-100a-175deg-c/dp/3405216RL)
---

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