# Power MOSFET, N Channel, 60 V, 225 A, 1200 µohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3619761/)

**URL**: https://novapart.co/products/DMTH61M8LPS-13/power-mosfet-n-channel-60-v-225-a-1200-ohm-powerdi
**SKU**: DMTH61M8LPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9920
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 225A |
| Drain Source On State Resistance | 1200µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3619761/)

**DMTH61M8LPS** [7 

**60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)Max**|**ID Max**<br>**TC = +25°C**|
|60V|1.6mΩ @ VGS= 10V|225A|
||2.8mΩ @ VGS= 4.5V|180A|



## **Features** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Engine Management Systems 

- Body Control Electronics 

- DC-DC Converters 

- **https://www.diodes.com/quality/product-definitions/** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH61M8LPSQ)** 

## **Mechanical Data** 

- Case: PowerDI[®] 5060-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram Below 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.097 grams (Approximate) 

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Site1:  <br>PowerDI5060-8 (Type K)<br>Ox Pin1  &<br>Top View  Bottom View  Internal Schematic<br>Site2<br>PowerDI5060-8 (SWP) (Type UX)<br>Pin1<br>oe =<br>Top View  Bottom View  Internal Schematic<br>**----- End of picture text -----**<br>


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S D<br>S D<br>S D<br>G D<br>Top View<br>Pin Configuration<br>S D<br>S D<br>S D<br>G D<br>Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMTH61M8LPS-13|PowerDI5060-8(Type K)|2,500 / Tape & Reel|
|DMTH61M8LPS-13|PowerDI5060-8 (SWP) (Type UX)|2,500 /Tape &Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/ . 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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**DMTH61M8LPS** 

## **Marking Information** 

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**----- Start of picture text -----**<br>
D D D D<br>; ) - ;<br>TH61M8LS<br>YY WW<br>5<br>S S S G<br>**----- End of picture text -----**<br>


## ot 

= Manufacturer’s Marking TH61M8LYYWW or YYWW = Date Code Marking S ~~_~~ = Product Type Marking Code YY or YY = Year (ex: 20 = 2020) WW = Week (01 to 53) 

## **Maximum Ratings** (@TC = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current, VGS= 10V (Note 6)|TC= +25°C|ID|225|A|
||TC= +100°C||160||
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)||IDM|900|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|TC= +25°C|IS|225|A|
|Pulsed BodyDiode Forward Current(10μs Pulse,DutyCycle = 1%)||ISM|900|A|
|Avalanche Current,L = 1mH||IAS|34.8|A|
|Avalanche Energy,L = 1mH||EAS|605|mJ|



## **Thermal Characteristics** (@TC = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|3.2|W|
|Thermal Resistance,Junction to Ambient(Note 5)||RJA|46|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|187.5|W|
|Thermal Resistance,Junction to Case(Note 6)||RJC|0.8|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +175|°C|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

6. Thermal resistance from junction to soldering point (on the exposed drain pad). 

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**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~_~~|**Symbol**<br>|**Min**<br>|**Typ **<br>|**Max**<br>|**Unit**<br>|**Test Condition**<br>|
|**OFF CHARACTERISTICS(Note 7) **<br>~~_~~|||||||
|Drain-Source Breakdown Voltage<br>~~_~~|BVDSS<br>|60<br>|—<br>|—<br>|V<br>|VGS= 0V,ID= 250μA<br>|
|Zero Gate Voltage Drain Current<br>~~_es~~|IDSS<br>~~es~~|—<br>~~es~~|—<br>~~es~~|1<br>~~es~~|μA<br>~~es~~|VDS= 48V,VGS= 0V<br>~~es~~|
|Gate-Source Leakage<br>~~es~~|IGSS<br>~~es~~|—<br>~~es~~|—<br>~~es~~|±100<br>~~es~~|nA<br>~~es~~|VGS= ±20V,VDS= 0V<br>~~es~~|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~<br>~~i~~<br>~~———————————~~|||||||
|Gate Threshold Voltage<br>~~ee~~<br>~~i~~|VGS(TH)<br>~~ee~~|1<br>~~ee~~<br>~~———————————~~|—<br>~~ee~~<br>~~———————————~~|3<br>~~ee~~<br>~~———————————~~|V<br>~~ee~~<br>~~———————————~~|VDS= VGS,ID= 250μA<br>~~ee~~<br>~~———————————~~|
|Static Drain-Source On-Resistance<br>~~i~~<br>~~—~~|RDS(ON)<br>|—<br>~~———————————~~<br>|1.2<br>~~———————————~~<br>|1.6<br>~~———————————~~<br>|mΩ<br>~~———————————~~<br>|VGS= 10V,ID= 30A<br>~~———————————~~<br>|
|||—<br>~~———————————~~<br>|1.9<br>~~———————————~~<br>|2.8<br>~~———————————~~<br>||VGS= 4.5V,ID= 20A<br>~~———————————~~<br>|
|Diode Forward Voltage<br>~~i~~<br>~~—~~|VSD<br>|—<br>~~———————————~~<br>|0.7<br>~~———————————~~<br>|1.2<br>~~———————————~~<br>|V<br>~~———————————~~<br>|VGS= 0V,IS= 20A<br>~~———————————~~<br>|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~—~~<br>~~eeeeeee~~<br>~~ee~~|||||||
|Input Capacitance<br>~~—es~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|8320<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee~~|pF<br>~~es~~<br>~~ee~~|VDS= 30V, VGS= 0V,<br>f = 1MHz<br>~~es~~<br>~~ee~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|2298<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|157<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee~~|||
|Gate Resistance<br>~~es~~<br>~~—————~~|Rg<br>~~ee~~<br>~~es~~|—<br>~~ee ~~<br>~~es~~|3<br> ~~eee~~<br>~~es~~|—<br>~~eee ~~<br>~~es~~<br>~~e~~|Ω<br> ~~ee~~<br>~~es~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~<br>~~es~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~es~~<br>~~—————~~|Qg<br>~~es~~|—<br>~~es~~|53.3<br>~~es~~|—<br>~~es~~<br>~~e~~|nC<br>~~es~~<br>~~e~~|VDS= 30V, ID= 30A<br>~~es~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~es~~<br>~~—————~~|Qg<br>~~es~~|—<br>~~es~~|115.5<br>~~es~~|—<br>~~es~~<br>~~e~~|||
|Gate-Source Charge<br>~~—————~~|Qgs|—|27.8|—<br>~~e~~|||
|Gate-Drain Charge<br>~~—————~~|Qgd|—|16.5|—<br>~~e~~|||
|Turn-On DelayTime<br>~~—————~~<br>~~Cn~~|tD(ON)|—|10.3|—<br>~~e~~|ns<br>~~e~~<br>~~ee~~|VDD= 30V, VGS= 10V,<br>ID= 30A, Rg= 3Ω<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~—————~~<br>~~Cn~~|tR|—|23.9|—<br>~~e~~|||
|Turn-Off DelayTime<br>~~Cn~~|tD(OFF)|—|108.3|—|||
|Turn-Off Fall Time<br>~~NN~~|tF|—|51.7|—<br>~~ee~~|||
|Body Diode Reverse Recovery Time<br>~~NN~~|tRR|—|64|—<br>~~ee~~|ns<br>~~ee~~|IF= 30A, di/dt = 100A/μs<br>~~ee~~|
|Body Diode Reverse Recovery Charge<br>~~NN~~|QRR|—|124|—<br>~~ee~~|nC<br>~~ee~~||



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**----- Start of picture text -----**<br>
100.0 30<br>90.0 VGS = 3.7V VDS = 5V<br>80.0 aWA e VGS = 4.0V 25 eee ieee<br>VGS = 4.5V<br>70.0 fF 20<br>60.0 |fo VGS = 3.5V<br>50.0 —IKXK VGS = 5.0V Pe 15 Seeee<br>VGS = 6.0V 125℃<br>40.0 VGS = 10.0V<br>Po 10 || ieee<br>30.0 Vo — VGS = 3.3V tt 85℃<br>150℃<br>20.0 [ no 5 AI 25℃<br>10.0 Po VGS = 2.8V VGS = 3.0V 175℃ fl} -55℃<br>0.0 -————_— 0 Dr<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>3.0 10<br>2.5 Pt | Et<br>8<br>VGS = 4.5V<br>2.0 PT<br>6<br>1.5 r TP<br>YF | | ||  | | | 4<br>1.0 VGS = 10V<br>2 ID = 30A<br>0.5 TTPtft ) | te<br>0.0 PEt Et td 0<br>10 30 50 70 90 110 130 150 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain  Figure 4. Typical Transfer Characteristic<br>Current and Gate Voltage<br>3 2.4<br>VGS = 10V 175℃ 2.2<br>2.5 To )<br>2<br>150℃ VGS = 10V, ID = 30A<br>2 a 1.8 H EELS<br>125℃<br>1.6<br>Ff | {| S LO<br>85℃<br>1.5 — 1.4 eee Zea<br>25℃ 1.2<br>1 — eee Zee<br>Ff | | 1 Bana<br>-55℃ VGS = 4.5V, ID = 20A<br>0.5 re e 0.80.6 re] ao | | | ct<br>0 Pt] } tL 0.4 TEEPE E f e y e<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain  Figure 6. On-Resistance Variation with<br>Current and Temperature Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)W )W<br>(m (m<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>)W<br>(m<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
4 3<br>3.5<br>tt 2.5 EERE<br>3<br>ID = 1mA<br>p} VGS = 4.5V, I tt D = 20A tt ee 2 yy<br>2.5<br>San na e e<br>2 1.5<br>Bune aera s-_,<br>ID = 250μA<br>1.5<br>oe 1 oS<br>1<br>o VGS = 10V, ID = 30A p 0.5 e<br>0.50 Saeeeeene COOP 0 PEEL<br>TT EE<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with  Figure 8. Gate Threshold Variation vs.<br>Temperature Junction Temperature<br>30 100000<br>VGS = 0V f = 1MHz<br>25 Ciss<br>ee |e 10000 a<br>20 A pe l<br>1000 Coss<br>15 ee || ee S = =e =<br>TA = 125 [o] C TA = 85 [o] C 100 Crss<br>10<br>TA = 150 [o] C | WK a<br>TA = 175 [o] C TA = 25 [o] C 10<br>5 e iHY == a S| =<br>TA = -55 [o] C<br>0 WT 1 a ———<br>0 0.3 0.6 0.9 1.2 0 10 20 30 40 50 60<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>1000<br>10<br>R<br>DS(ON)<br>Limited<br>8<br>100<br>PW = 1µs<br>6 PW = 10µs<br>10<br>PW = 100µs<br>4 PW = 1ms<br>VDS = 30V, ID = 30ADS = 30V, ID = 30A = 30V, ID = 30AD = 30A = 30A 1 TTJ(Max) C = 25= 175 ℃ ℃  PW = 10ms<br>2 Single PulseDUT on Infinite  PW = 100ms<br>Heatsink DC<br>VGS = 10V<br>ZL LEE 0.1 sainPT INU<br>0<br>0.1 1 10 100<br>0 10 20 30 40 50 60 70 80 90 100110120<br>Qg (nC)g (nC) (nC) Figure 12. SOA, Safe Operation AreaVDS, DRAIN-SOURCE VOLTAGE (V)<br>)W<br>(m<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>(V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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10<br>8<br>6<br>4<br>VDS = 30V, ID = 30ADS = 30V, ID = 30A = 30V, ID = 30AD = 30A = 30A<br>2<br>ZL LEE<br>0<br>0 10 20 30 40 50 60 70 80 90 100110120<br>Qg (nC)g (nC) (nC)<br>Figure 11. Gate Charge<br>(V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1 i ————<br>SSee<br>e D=0.7 t<br>D=0.5<br>P E Serr ho<br>D=0.3 sansa rT TTT<br>D=0.9<br>mene Eeest A ee TTL TTI ETAT FT<br>0.1 p—}+ a | |PPwlzu?rae A eeeeeM<br>a D=0.1 tt<br>eet AL He EER<br>D=0.05<br>ei mem<br>PEAT ETT<br>D=0.02<br>CNoo? e TTTTH<br>D=0.01<br>0.01 fATK D=0.005 aaa[eee{ee0 eee eee eeeeeeeee ee<br>Samu D=Single Pulse C EE<br>|_|Fo a=ER RθJC(t) = r(t) * RθJC TTTHTTTT<br>COT RθJC = 0.8℃/W mill<br>Duty Cycle, D = t1 / t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **Site1:** 

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**----- Start of picture text -----**<br>
PowerDI5060-8 (Type K)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
||||||||||
|---|---|---|---|---|---|---|---|---|
|D|
|D1|
|PowerDI5060-8|
|0|(4x)|(Type K)|
|Dim|Min|Max|Typ|
|A|0.90|1.10|1.00|
|x|c|A1|A1|0|0.05|0.02|
|E1|E|b|0.33|0.51|0.41|
|b1|0.300|0.366|0.333|
|y|Seating Plane|b2|0.20|0.35|0.25|
|e|c|0.23|0.33|0.277|
|C|D|5.15 BSC|
|D1|4.85|4.95|4.90|
|1|
|Ø|1.000 Depth 0.07±|0.030|0|1(4x)|D2|-|-|3.98|
|E|6.15 BSC|
|b1(8x)|DETAIL A|E1|5.75|5.85|5.80|
|b(8x)|e/2|E2|3.56|3.725|3.66|
|e|1.27BSC|
|1|k|-|-|1.27|
|L|L|0.51|0.71|0.61|
|D2|k|b2(2x)|La|0.51|0.675|0.61|
|L1|0.05|0.20|0.175|
|L4|-|-|0.125|
|M|3.50|3.71|3.605|
|L4|
|E2|A|x|-|-|1.400|
|M|
|y|-|-|1.900|
|θ|10°|12°|11°|
|DETAIL A|θ1|6°|8°|7°|
|All Dimensions in mm|
|La|L1|
|Site2:|
|PowerDI5060-8 (SWP) (Type UX)|
|D|
|D1|PowerDI5060-8 (SWP)|
|(Type UX)|
|Dim|Min|Max|Typ|
|A|0.90|1.10|1.00|
|A1|0|0.05|--|
|b|0.30|0.50|0.41|
|E1|E|A1|b2|0.20|0.35|0.25|
|1.900|1.400|c|Seating Plane|b4|0.25REF|
|c|0.230|0.330|0.277|
|e|
|D|5.15 BSC|
|D1|4.70|5.10|4.90|
|1|D2|3.56|3.96|3.76|
|D2a|3.78|4.18|3.98|
|Ø|1.000 Depth 0.07±|0.030|
|DETAIL A|E|6.40 BSC|
|b(8x)|E1|5.60|6.00|5.80|
|e/2|
|1|E2|3.46|3.86|3.66|
|L|E2a|4.195 4.595 4.395|
|e|1.27BSC|
|D2a|k|k|1.05|--|--|
|L|0.635|0.835|0.735|
|La|0.635|0.835|0.735|
|A|L1|0.200|0.400|0.300|
|L4|
|E2|D2|L1a|0.050REF|
|M|L4|0.025|0.225|0.125|
|DETAIL A|M|3.205 4.005|3.605|
|θ|10°|12°|11°|
|La|θ1|6°|8°|7°|
|All Dimensions in mm|
|b4(8x)|L1|
|7 of 9|

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DMTH61M8LPS 7 of 9<br>Document number: DS41664 Rev. 4 - 2 www.diodes.com<br>**----- End of picture text -----**<br>


September 2020 © Diodes Incorporated 

**DMTH61M8LPS** 

## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **Site1:** 

**PowerDI5060-8 (Type K)** 

**==> picture [131 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
ro X2<br>Y1<br>7<br>Y2<br>Y3<br>G1 Lot, X1<br>Y C X (8x)<br>G<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|1.270|
|**G**|0.660|
|**G1**|0.820|
|**X**|0.610|
|**X1**|3.910|
|**X2**|4.420|
|**Y**|1.270|
|**Y1**|1.020|
|**Y2**|3.810|
|**Y3**|6.610|



## **Site2:** 

**PowerDI5060-8 (SWP) (Type UX)** 

X2 

**==> picture [347 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
Y1<br>Value<br>Dimensions<br>(in mm)<br>C  1.270<br>Y2 G  0.660<br>G1  0.820<br>Y3<br>X  0.610<br>X1  4.100<br>cy<br>X2  4.420<br>G1 X1<br>Y  1.270<br>Y1  1.020<br>Y2  3.810<br>Y3 6.610<br>Y C X (8x)<br>a G<br>**----- End of picture text -----**<br>


8 of 9 **www.diodes.com** 

DMTH61M8LPS Document number: DS41664 Rev. 4 - 2 

September 2020 © Diodes Incorporated 

**DMTH61M8LPS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

9 of 9 **www.diodes.com** 

DMTH61M8LPS Document number: DS41664 Rev. 4 - 2 

September 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH61M8LPS-13/power-mosfet-n-channel-60-v-225-a-1200-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth61m8lps-13/mosfet-n-ch-60v-225a-powerdi-5060/dp/3619761)
---

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