# Power MOSFET, N Channel, 60 V, 100 A, 3000 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943919/)

**URL**: https://novapart.co/products/DMTH6004SK3Q-13/power-mosfet-n-channel-60-v-100-a-3000-ohm-to-252
**SKU**: DMTH6004SK3Q-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5390
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 180W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 3000µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943919/)

> **Green DMTH6004SK3Q** ~~@ J~~ 

**60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**QG Typ**|**ID Max**<br>**TC = +25°C**<br>(Note 10)|
|---|---|---|---|
|60V|3.8mΩ@VGS= 10V|95.4nC|100A|



## **Features** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application 

- Low RDS(ON) – Minimizes Power Losses 

- Low QG – Minimizes Switching Losses 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

   - Case: TO252 (DPAK) 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Engine Management Systems 

- Body Control Electronics 

- DC-DC Converters 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.33 grams (Approximate) 

 

- Motor Control 

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D D<br>TO252 (DPAK)<br>G<br>D<br>@® . &<br>G S S<br>Top View  Top View Pin Out  Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMTH6004SK3Q-13|TO252(DPAK)|2,500/Tape &Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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T6004S<br>YYWW<br>**----- End of picture text -----**<br>


=Manufacturer’s Marking T6004S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) 

1 of 7 **www.diodes.com** 

DMTH6004SK3Q Document number: DS37557  Rev. 2 - 2 

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**DMTH6004SK3Q** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 7)|TC= +25°C<br>(Note 10)<br>TC= +100°C|ID|100<br>75|A|
|Maximum BodyDiode Forward Current (Note 7)|TC= +25°C|IS|100|A|
|Pulsed Drain Current (10µs Pulse, DutyCycle = 1%)||IDM|150|A|
|Avalanche Current, L = 0.2mH||IAS|45|A|
|Avalanche Energy, L = 0.2mH||EAS|200|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|3.9|W|
|Thermal Resistance, Junction to Ambient (Note 6)||RθJA|38|°C/W|
|Total Power Dissipation (Note 7)|TC= +25°C|PD|180|W|
|Thermal Resistance, Junction to Case (Note 7)||RθJC|0.8|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**|||||||
|Drain-Source Breakdown Voltage<br>~~eG~~|BVDSS<br>~~eG~~|60<br>~~eG~~||<br>~~GG~~|V<br>~~GG~~|VGS= 0V, ID= 1mA<br>~~GG~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|VDS= 48V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±20V, VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS(Note 8)**<br>~~GQOO~~<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~Ge~~|VGS(TH)<br>~~Ge~~|2<br>~~Ge~~<br>~~GQ~~|<br>~~Ge~~<br>~~GQ~~<br>~~ee~~|4<br>~~Ge~~<br>~~GQ~~<br>~~ee~~|V<br>~~Ge~~<br>~~OO~~|VDS= VGS, ID= 250µA<br>~~Ge~~<br>~~OO~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|<br>~~GQ~~<br>~~ee~~|3<br>~~GQ~~<br>~~ee~~<br>~~ee~~|3.8<br>~~GQ ~~<br>~~ee~~<br>~~ee~~|mΩ<br> ~~OO~~<br>~~ee~~|VGS= 10V, ID= 90A<br>~~OO~~<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|<br>~~ee~~|0.9<br>~~ee~~<br>~~ee~~|1.2<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|VGS= 0V, IS= 20A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~ee~~|||||||
|Input Capacitance<br>~~eC~~<br>~~eee~~|CISS<br>~~eC~~<br>~~eee~~|<br>~~eC~~<br>~~eee~~|4,556<br>~~ee~~<br>~~eC~~<br>~~eee~~|<br>~~ee~~<br>~~eC~~<br>~~eee~~|pF<br>~~eee~~|VDS= 30V, VGS= 0V, f = 1MHz<br>~~eee~~|
|Output Capacitance<br>~~eee~~|COSS<br>~~eee~~|<br>~~eee~~|1,383<br>~~eee~~|<br>~~eee~~|||
|Reverse Transfer Capacitance<br>~~eee~~|CRSS<br>~~eee~~|<br>~~eee~~|105.2<br>~~eee~~|<br>~~eee~~|||
|Gate Resistance<br>~~eee~~<br>~~ee~~|RG<br>~~eee~~|<br>~~eee~~|0.66<br>~~eee~~|<br>~~eee~~|Ω<br>~~eee~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~eee~~|
|Total Gate Charge<br>~~a~~<br>~~ee~~|QG<br>~~a~~|<br>~~a~~|95.4<br>~~a~~|<br>~~a~~|nC|VDS= 30V, ID= 90A,VGS= 10V|
|Gate-Source Charge<br>~~ee~~|QGS||21.6||||
|Gate-Drain Charge<br>~~ee~~|QGD||20.4||||
|Turn-On DelayTime<br>~~ee~~<br>~~**e**ae~~|tD(ON)<br>~~ae~~|<br>~~ae~~|13.2<br>~~ae~~|<br>~~ae~~|ns<br>~~ae~~|VDD= 30V, VGS= 10V,<br>ID= 90A, RG= 3.5Ω<br>~~ae~~|
|Turn-On Rise Time<br>~~ee~~<br>~~a~~<br>~~**e**ae~~|tR<br>~~a~~<br>~~ae~~|<br>~~a~~<br>~~ae~~|11.7<br>~~a~~<br>~~ae~~|<br>~~a~~<br>~~ae~~|||
|Turn-Off DelayTime<br>~~eC~~<br>~~**e**ae~~|tD(OFF)<br>~~eC~~<br>~~ae~~|<br>~~eC~~<br>~~ae~~|31<br>~~eC~~<br>~~ae~~|<br>~~eC~~<br>~~ae~~|||
|Turn-Off Fall Time<br>~~**e**ae~~|tF<br>~~ae~~|<br>~~ae~~|12<br>~~ae~~|<br>~~ae~~|||
|BodyDiode Reverse RecoveryTime<br>~~**e**ae~~|tRR<br>~~ae~~<br>~~ee~~|<br>~~ae~~<br>~~es~~|50.5<br>~~ae~~<br>~~se~~|<br>~~ae~~<br>~~se~~|ns<br>~~ae~~|IF= 50A, di/dt = 100A/μs<br>~~ae~~|
|BodyDiode Reverse RecoveryCharge<br>~~**e**ae~~|QRR<br>~~ae~~<br>~~s~~<br>~~ee~~|<br>~~ae~~<br>~~s~~<br>~~es~~|80.8<br>~~ae~~<br>~~s~~<br>~~se~~|<br>~~ae~~<br>~~s~~<br>~~se~~|nC<br>~~ae~~<br>~~s~~||



- Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 

   7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

   8. Short duration pulse test used to minimize self-heating effect. 

   9. Guaranteed by design. Not subject to production testing. 

   10. Package limited. 

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150.0 20<br>VGS = 10V VGS = 6.0V V     = 5.0VDS<br>VGS = 8.0V of ae 18<br>120.0 16<br>ae an A<br>VGS = 7.0V<br>[A)] (T 14<br>Anne ees|<br>90.0 [N] E 12<br>R<br>R<br>U 10 A<br>C<br>60.0 fo| [IN] A 8 eseJ T   = 175°CA Wit<br>VGS = 5.0V RD 6 T   = 150°CA T   = 85°CA<br>, D<br>I<br>30.0 fo 4 = T   = 125°CA WHE T   = 25°CA<br>- VGS = 4.5V 2 = silty<br>T   = -55°CA<br>0.0 [—_—_—— 0 — |FE<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6<br>VDS, DRAIN-SOURCE VOLTAGE (V) V    , GATE-SOURCE VOLTAGE (V)GS<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>7  20<br>18<br>6<br>16<br>5  ee 14 eee I D  = 90A<br>4  a 12<br>VGS = 10V 10<br>3  SD ee<br>8<br>2  en 6<br>4<br>1  eT ft ft {Nf{|} ttt<br>2<br>0  Ff | jf ft 0 SSE—ELELELELL, EE<br>2 4 6 8 10 12 14 16 18 20<br>0 30 60 90 120 150 V GS, GATE-SOURCE VOLTAGE (V)<br>ID, DRAIN-SOURCE CURRENT (A)  Figure 4 Typical Drain-Source On-Resistance<br>Figure 3 Typical On-Resistance vs. Drain Current and  vs. Gate-Source Voltage<br>Gate Voltage<br>8 2.2<br>VGS = 10V<br>7 LEELA 2 PE TTETT<br>TA  = 150°C TA = 175°C 1.8<br>6 TELL EE PEE | tytty<br>5 SEE TA = 125°C 1.6 VI GS D = 90A  10= V | to<br>TA = 85°C Pi]<br>TELL 1.4 HH AA<br>4<br>SERRE EEL TA = 25°C 1.2 Sane| dt 4nneAL<br>3<br>PEE TA  = -55°C 1 Cee<br>2<br>0.8<br>1 Toe<br>0.6<br>010 TL 20 30 40 ELEELLELELLL 50 60 70 80 90100 110120 130 140150 0.4 TPP PT<br>Figure 5 Typical On-Resistance vs. ID, DRAIN CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE (0 25 50 75 100 125C)150 175<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE (m<br>DS(ON)<br>R<br>DS(ON)<br>R<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (m<br>DS(ON)<br>R<br>D<br>, DRAIN CURRENT (A)<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.008 4<br>0.007 PT; ee [V)] 3.5<br>0.006 [GE(] A<br>3<br>0.005 PEeererre}aan V I GS D = 90A   10= V a = [OLT] V  REECEie I   = 1mAD<br>[LD] O 2.5<br>0.004 I   = 250µAD<br>coher | [SH] E  PERL<br>R 2<br>H<br>0.003 Cooerfo T eeHE<br>E<br>1.5<br>0.002 [AT] G<br>,<br>0.001 eer ( [th)] G [S] 1 EEE eEPS<br>V<br>0 0.5<br>Pt EET TTT El -ELEE ELE<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (C) T  , JUNCTION TEMPERATURE (C)J <br>Figure 7 On-Resistance Variation with Temperature      Figure 8 Gate Threshold Variation vs. Temperature<br>150 10000<br>Ciss<br>120 See |i -=-------—<br>)<br>T [(A] N 1000 Coss<br>E<br>R 90<br>R<br>U<br>C<br>E T   = 175°CA<br>C<br>R 60<br>O [U] T   = 150°CA T   = 85°CA 100<br>S<br>I [,] S 30 T   = 125°CA T   = 25°CA C rss<br>T   = -55°CA f=1MHz<br>0<br>0 0.3 Ly} 0.6 0.9 1.2 1.5 100 DCE 5 10 15 20 25 30 35 40 45 50 55 60<br>V    , SOURCE-DRAIN VOLTAGE (V)SD V DS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10<br>2000 100<br>1800 90<br>8 TUK) = 1600 Eee 80 E<br>[A)]<br>1400 70<br>Av<br>6 dy, [ent(][r] u [r] 1200 A 60 al<br>C<br>anc<br>1000 50<br>4 |) LLY VDS = 30V, ID = 90A 7 800 —\O Tf 40<br>[anche] 600 30 heEner<br>2 [val] A gy<br>Woo SA 400 eS 20 (m<br>I J<br>200 10 )<br>0<br>JT 0 ee 0<br>0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100<br>Qg (nC) L Inductor (H)<br>Figure 11 Gate Charge  Figure 12 Single-Pulsed Avalanche Rating<br>E<br>AS<br>, AVALANCHE ENERGY (mJ)<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS<br> (V)<br>GS<br>V<br>, AVALANCHE CURRENT (A)<br>IAS<br>**----- End of picture text -----**<br>


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100  PESeeeeeiNTTNellieee,NTNSS ee Sl 1000 ea RDS(ON) Limited Poofe P eefp W  pee  =10µs EEee PW =1µs<br>NN ee ee ith<br>PTT PP PINT ET 100 Pd keh a= qt<br>mall 7A IN| re NSE<br>TJ=150 ℃ vas 7 at SN<br>PW =100µs<br>TJ=100 ℃<br>10  NILNI\ We \ 10 a anim PW =1ms BANKOM!AT<br>oii TN ee<br>Seat TJ=25 ℃ ee CS ET<br>PTa TTA emerTET MTNlANeH 1 a TJ(Max) = 175 ℃  TC = 25 ℃ PW NN  =10ms SXANE EeHT<br>a a Single Pulse NE PW =100ms<br>DUT on Infinite Heatsink<br>PW =1s<br>VGS= 10V<br>1  | 0.1 HailPl 11 EI<br>0.1 1 10 100<br>0.1 1 10 100 1000<br>tp, PULSE DURATION (µs) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 13 Avalanche Current  vs. Pulse Duration Figure 14 SOA, Safe Operation Area<br>1<br>e e<br>e D=0.7 ee<br>gL D=0.5 a a a<br>D=0.3<br>Po TIEmmST TE eerieOP NENTT ETI PTT<br>D=0.9<br>0.1 DNZ e ll<br>D=0.1 aci See eleeee a ee ee ee<br>SN A [Seis] A<br>eee |<br>D=0.05<br>a a a a a<br>po HtAEE UATIE FTE ETI PTT<br>0.01 pare eA a D=0.02 A I UII IMTITEL<br>H EH<br>NemW Al D=0.01 CC eernee RθJC(t) = r(t) * RθJC PTCoo TT<br>= D=0.005 LTT TTT PTT RθJC = 0.8 ℃ /W LT<br>Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 15 Transient Thermal Resistance<br>, DRAIN CURRENT (A)<br>ID<br>, AVALANCHE CURRENT (A)<br>IAS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMTH6004SK3Q Document number: DS37557  Rev. 2 - 2 

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**DMTH6004SK3Q** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TO252 (DPAK)** 

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E<br>A<br>b3 TO252 (DPAK)<br>7°± 1° c Dim Min  Max  Typ<br>L3<br>| |< , a FE A  2.19  2.39  2.29<br>A1  0.00  0.13  0.08<br>A2  0.97  1.17  1.07<br>D A2 b  0.64  0.88 0.783<br>H<br>L4 b2  0.76 1.14  0.95<br>b3  5.21  5.46 5.33<br>c  0.45 0.58 0.531<br>D  6.00 6.20 6.10<br>D1  5.21  –  –<br>e<br>b(3x) e  –  –  2.286<br>b2(2x) E  6.45  6.70  6.58<br>E1  4.32  –  –<br>0.508<br>Gauge Plane H  9.40 10.41 9.91<br>L  1.40  1.78  1.59<br>E1 D1 Seating Plane L3  0.88  1.27  1.08<br>L L4  0.64  1.02  0.83<br>A1<br>a  0°  10°  –<br>2.74REF<br>All Dimensions in mm<br>See Ee<br>a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **TO252 (DPAK)** 

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**----- Start of picture text -----**<br>
e e X1 ee<br>Y1<br>.<br>Y2<br>L C<br>Y<br>ait X<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|4.572|
|**X**|1.060|
|**X1**|5.632|
|**Y**|2.600|
|**Y1**|5.700|
|**Y2**|10.700|



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**DMTH6004SK3Q** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMTH6004SK3Q Document number: DS37557  Rev. 2 - 2 

November 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH6004SK3Q-13/power-mosfet-n-channel-60-v-100-a-3000-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth6004sk3q-13/mosfet-n-ch-60v-100a-to-252/dp/3943919)
---

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