# Power MOSFET, N Channel, 40 V, 100 A, 2700 µohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3943915RL/)

**URL**: https://novapart.co/products/DMTH43M8LPSQ-13/power-mosfet-n-channel-40-v-100-a-2700-ohm-powerdi
**SKU**: DMTH43M8LPSQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4120
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (27-Jun-2024) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 83W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 2700µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943915RL/)

**DMTH43M8LPSQ Green 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)Max**|**ID **<br>**TC = +25°C**<br>**(Note 9)**|
|40V|3.3mΩ@VGS= 10V|100A|
||5.0mΩ@VGS= 5V|95A|



## **Features** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching  – Ensures More Reliable And Robust End Application 

- Low RDS(ON) – Minimizes On-State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - **The DMTH43M8LPSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

      - **https://www.diodes.com/quality/product-definitions/** 

- BLDC motors 

- DC-DC converters 

- Load switches 

## **Mechanical Data** 

- Package: PowerDI **[®]** 5060-8 

- Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

 Weight: 0.097 grams (Approximate) 

Site1: 

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PowerDI5060-8<br>Pin1<br>og ®<br>Top View  Bottom View  Internal Schematic<br>PowerDI5060-8 (SWP) (Type UX)  D<br>Pin1<br>G<br>S<br>ee ©<br>Top View  Bottom View  Internal Schematic<br>**----- End of picture text -----**<br>


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_PowerDI is a registered trademark of Diodes Incorporated._ 

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**DMTH43M8LPSQ** 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|(Note 4)|||
|---|---|---|---|
|**Part Number**|**Package**|**Packing**||
|||**Qty. **|**Carrier**|
|DMTH43M8LPSQ-13|PowerDI5060-8|2,500|Tape &Reel|
|DMTH43M8LPSQ-13|PowerDI5060-8 (SWP) (Type UX)|2,500|Tape &Reel|



Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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PowerDI5060-8  PowerDI5060-8 (SWP) (Type UX)<br>D D D D D D D D<br>—<br>TH43M8LS TH43M8LS<br>YY WW YY WW<br>_a | -<br>S S S G S S S G<br>**----- End of picture text -----**<br>


” =Manufacturer’s Marking TH43M8LS = Product Type Marking Code YYWW or YYWW = Date Code Marking YY or YY = Year Code (ex: 22 = 2022) WW = Week Code (01 to 53) 

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**DMTH43M8LPSQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|40|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current, VGS= 10V (Note 5)|TA= +25°C<br>TA= +100°C|ID|22<br>15.5|A|
|Continuous Drain Current, VGS= 10V (Note 6) (Note 9)|TC= +25°C<br>TC= +100°C|ID|100<br>82|A|
|Pulsed Drain Current (10µs Pulse, DutyCycle = 1%)||IDM|350|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)||IS|69|A|
|Pulsed BodyDiode Forward Current (10µs Pulse, DutyCycle = 1%)||ISM|350|A|
|Avalanche Current,L = 1mH||IAS|13.2|A|
|Avalanche Energy,L = 1mH||EAS|87|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|2.7|W|
|Thermal Resistance,Junction to Ambient(Note 5)||RθJA|55|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|83|W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|1.8|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 7)|||||||
|Drain-Source Breakdown Voltage|BVDSS|40|—|—|V|VGS= 0V,ID= 1mA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|μA|VDS= 32V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 7)|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)|1<br>~~————————————~~|—<br>~~————————————~~|2.5<br>~~————————————~~|V<br>~~————————————~~|VDS= VGS,ID= 250μA<br>~~————————————~~|
|Static Drain-Source On-Resistance (TC= +25°C)<br>~~a~~|RDS(ON)|—<br>~~————————————~~|2.7<br>~~————————————~~|3.3<br>~~————————————~~|mΩ<br>~~————————————~~|VGS= 10V,ID= 20A<br>~~————————————~~|
|||—<br>~~————————————~~|3.6<br>~~————————————~~|5.0<br>~~————————————~~||VGS= 5V,ID= 15A<br>~~————————————~~|
|Static Drain-Source On-Resistance (TC= +175°C)<br>(Note 8)<br>~~a~~|RDS(ON)<br>~~a~~|—<br>~~a~~|4.7<br>~~a~~|—<br>~~a~~|mΩ<br>~~a~~|VGS= 10V, ID= 20A<br>~~a~~|
|Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|—<br>~~a~~|—<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|VGS= 0V,IS= 20A<br>~~a~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)|||||||
|Input Capacitance<br>~~——~~|CISS<br>~~——~~|—<br>~~——~~|2,693<br>~~——~~|3,367<br>~~——~~|pF<br>~~——~~|VDS= 20V, VGS= 0V,<br>f = 1MHz<br>~~——~~|
|Output Capacitance<br>~~——~~|COSS<br>~~——~~|—<br>~~——~~|850<br>~~——~~|1105<br>~~——~~|||
|Reverse Transfer Capacitance<br>~~——~~|CRSS<br>~~——~~|—<br>~~——~~|52<br>~~——~~|104<br>~~——~~|||
|Gate Resistance<br>~~——~~<br>~~—————~~|RG<br>~~——~~|—<br>~~——~~|2.54<br>~~——~~|5.1<br>~~——~~<br>~~e~~|Ω<br>~~——~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~——~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~—————~~|QG|—|38.5|49<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VDS= 20V, ID= 20A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~—————~~|QG|—|17.6|22<br>~~e~~|||
|Gate-Source Charge<br>~~—————~~|QGS|—|6.9|11<br>~~e~~|||
|Gate-Drain Charge<br>~~—————~~<br>~~—_————~~|QGD|—|6.9|11<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~—————~~<br>~~—_————~~|tD(ON)|—|5.2|10<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDD= 20V, VGS= 10V,<br>ID= 20A, RG= 1.6Ω<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~—_————~~|tR|—|5.7|11<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—_————~~|tD(OFF)|—|23.5|46<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—_————~~|tF|—|11|22<br>~~ee~~|||
|BodyDiode Reverse RecoveryTime<br>~~—_————~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|35.4<br>~~ee~~|70<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|IF= 15A, di/dt = 100A/μs<br>~~ee~~<br>~~ee~~|
|BodyDiode Reverse RecoveryCharge<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|32.9<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~||



Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

9. Package limit. 

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50 30<br>45 VGS = 10V VDS = 5.0V<br>2 VGS = 5V ee<br>40 VGS = 4V 25<br>fo VGS = 3.5V |<br>35 VGS = 3.0V<br>20<br>30<br>25 (ee e 15 TA  = 175°C  i<br>20 TA = 150°C TA  = 25°C<br>[fo 10 TA  = 125°C HH TA = -55 ° C<br>15<br>TA  = 85°C<br>10<br>5<br>5 VGS = 2.5V<br>(eee |<br>0 [—————— 0 7) ae<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>5 30<br>4.5<br>p {| | tt fe 25 FELL EEE<br>4<br>VGS = 5V<br>20 I D  = 20A<br>Se CTT<br>3.5<br>3 a 15 Lee I D  = 15A<br>VGS = 10V<br>2.5<br>10<br>> TOLLE ELLE<br>2<br>5<br>1.5<br>Seeee 6A<br>1 TE 0 | eee<br>0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20<br>I D, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs. Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>6 2.2<br>VGS  = 10V<br>5.5<br>ee ee 2 TLE<br>5<br>4.5 TA = 150°C TA  = 175°C 1.8 VGS = 10V<br>4 aes T A  = 125°C 1.6 TE ID = 20A<br>3.5 TA = 85°C<br>1.4<br>2.53 TA = 25°C 1.2 VGSID = 15A= 5V<br>TA = -55°C<br>2<br>1<br>1.5<br>OT 0.8 >anne<br>1 oo td Saas<br>0.5 0.6<br>0<br>0 a 5 10 15 20 25 30 0.4 "CCE<br>ID, DRAIN CURRENT (A) -50 -25 0 25 50 75 100 125 150 175<br>Figure 5 Typical On-Resistance vs.  TJ, JUNCTION TEMPERATURE (C)<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>D<br>, DRAIN CURRENT (A)<br> I<br>, DRAIN CURRENT (A)<br>ID<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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8 2.5<br>7<br>TT LELELLLL TTT<br>2<br>6<br>CAPE TI TI]<br>5 VGS = 5V, ID = 15A 1.5 I D  = 1mA<br>4 Poer e cert ———ARAL ID = 250µA ED<br>3 p= 29> E r00 1 (TTTww<br>2<br>VGS = 10V, ID = 20A<br>1 amT aa an 0.5 ALLELES\<br>0<br>-50 EEE -25 0 25 50 75 100 125 150 175 0 TTY yyy Ey.<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (C)<br>Figure 7. On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient TemperatureFigure 8 Gate Threshold Variation vs. Temperature<br>10000<br>30<br>f = 1MHz<br>VGS = 0V<br>Ciss<br>25 TT 7—==S<br>WT 1000 Coss =<br>20<br>eee<br>15 TEP TA = 175 ° C O O<br>10 T T A A  = 125  = 150°C° C Hy T TAA  = -55°C  = 25°C 100 SeeSS<br>TA  = 85°C<br>WT I N Crss<br>5 Hy | | =<br>10<br>DS] 0 po 5 10 15 20 25 30 35 40<br>0<br>0 0.3 0.6 0.9 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>1000<br>10<br>R LIMITED<br>DS(ON)<br>9<br>8<br>100<br>7<br>PW=1µs<br>6<br>PW=10µs<br>10<br>5<br>PW=100µs<br>4 VDS = 20V, ID = 20A TJ(MAX)=175℃ PW=1ms<br>3 1 TC=25℃ PW=10ms<br>2 ae Single PulseDUT on infinite  ee PW=100ms  Ne ll<br>1 heatsink PW=1s<br>VGS=10V<br>0 JTLELELELL Ann 0.1 SayP| NelTP<br>0.1 1 10 100<br>0 5 10 15 20 25 30 35 40<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>Figure 11. Gate Charge<br>, SOURCE CURRENT (A)<br>I<br>S<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>Sra D = 0.9<br>D = 0.7<br>Saa D = 0.5 ceSSS es SS SES geo cael te tf |<br>pe D = 0.3 EP<br>HHH EERSTE<br>0. 1 ee D = 0.1 ENN AN |<br>er | LUTE IELE<br>ee sie ena ee a ee ee de<br>A te<br>D = 0.05<br>mn 7A |<br>2a<br>TTY D = 0.02<br>0.0 1 eelTOct7 D = 0.01 a A SO ON GG SG GG GG OT OO<br>petSEa D = Single Pulse Tt D =  TT 0.005 tTae R JC(t) = r(t)  *  RJC nt<br>R  JC  = 1.8°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **Site1** 

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PowerDI5060-8<br>**----- End of picture text -----**<br>


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PowerDI5060-8<br>D —— Dim  Min  Max  Typ<br>D1 Detail A A  0.90 1.10 1.00<br>0 ( 4X) A1  0.00  0.05  <br>b 0.33 0.51  0.41<br>e e a c ae b2  0.200 0.350 0.273<br>A1 b3 0.40 0.80 0.60<br>c 0.230 0.330 0.277<br>E 1 E<br>D  5.15 BSC<br>e D1  4.70 5.10 4.90<br>D2  3.70 4.10 3.90<br>l 1 o |, , |) = 0 1 ( 4X) ———— D3 3.90 4.30 4.10<br>E  6.15 BSC<br>E1  5.60 6.00 5.80<br>b ( 8X) e/2 E2  3.28 3.68 3.48<br>1 E3 3.99 4.39 4.19<br>L tired b2 ( 4X) rt e 1.27 BSC<br>D3 K G 0.51  0.71  0.61<br>K  0.51  <br>ee ee ee<br>A E 3 E 2 D2 b3 ( 4X) L1 L  00.1.5001  00.2.71 00 00.17.61 5<br>M<br>sean Ra eS M  3.235 4.035 3.635<br>~~ Detail A ! rff m i¢ an v an ve n da M1 esa M1  1. ee 00 1.4 ee 0 1.21  ee<br>Θ  10°  12°  11°<br>G L1 : — Θ1  6°  8°  7°<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


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Site2<br>PowerDI5060-8 (SWP) (Type UX)<br>D<br>PowerDI5060-8 (SWP)<br>D1 (Type UX)<br>“ - _ |<br>Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>|! A1  0 0.05 --<br>b 0.30 0.50 0.41<br>E1 E A1 b2  0.20 0.35 0.25<br>b4  0.25REF<br>1.900 1.400 c S eating Plane c 0.230 0.330 0.277<br>e D  5.15 BSC<br>D1  4.70 5.10 4.90<br>nailuae  on —— D2  a 3.56 3.96 3.76<br>1 D2a 3.78 4.18 3.98<br>Ø1.000 Depth 0.07±0.030 —_ ae E  6.40 BSC<br>DETAIL A E1  5.60 6.00 5.80<br>b( 8x) E2  3.46 3.86 3.66<br>e/2<br>1 E2a 4.195 4.595 4.395<br>L e 1.27BSC<br>——— k  1.05 --  --<br>D2a k L  0.635 0.835 0.735<br>a ee ee eee<br>pee Ty La 0.635 0.835 0.735<br>L1  0.200 0.400 0.300<br>A L1a 0.050REF<br>L4<br>E2 AA D2 T ae L4  0.025 0.225 0.125<br>M M  3.205 4.005 3.605<br>DE TAIL A θ  10°  12°  11°<br>a a eee ee<br>La lame‘amy an a x ———ee θ1  ee 6°  8 ee °  7°<br>All Dimensions in mm<br>b4( 8x) L1<br>0( 4x)<br>4x)<br>01(<br>**----- End of picture text -----**<br>


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**DMTH43M8LPSQ** 

## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **Site1:** 

**PowerDI5060-8** 

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X4<br>Y2<br>X3<br>Y3 Y1<br>X2<br>Y5<br>Y4 X1<br>Y7<br>C G1<br>Y6<br>Y( 4x)<br>“goon X G<br>Site2:<br>X2<br>Y1<br>Y2<br>Y3<br>G1 X1<br>Y C X ( 8x)<br>00 G a.<br>**----- End of picture text -----**<br>


**PowerDI5060-8 (SWP) (Type UX)** 

**==> picture [115 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions  Value (in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>X1  4.100<br>X2  0.755<br>X3  4.420<br>X4  5.610<br>Y  1.270<br>Y1  0.600<br>Y2  1.020<br>Y3  0.295<br>Y4  1.825<br>Y5  3.810<br>Y6  0.180<br>Y7  6.610<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|1.270|
|**G**|0.660|
|**G1**|0.820|
|**X**|0.610|
|**X1**|4.100|
|**X2**|4.420|
|**Y**|1.270|
|**Y1**|1.020|
|**Y2**|3.810|
|**Y3**|6.610|



8 of 9 **www.diodes.com** 

DMTH43M8LPSQ Document number: DS39883   Rev. 3 - 2 

January 2022 © Diodes Incorporated 

**DMTH43M8LPSQ** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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Copyright © 2022 Diodes Incorporated 

**www.diodes.com** 

9 of 9 **www.diodes.com** 

DMTH43M8LPSQ Document number: DS39883   Rev. 3 - 2 

January 2022 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH43M8LPSQ-13/power-mosfet-n-channel-40-v-100-a-2700-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth43m8lpsq-13/mosfet-n-ch-40v-100a-powerdi-5060/dp/3943915RL)
---

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