# Dual MOSFET, N Channel, 40 V, 40 V, 43.6 A, 43.6 A, 0.015 ohm

![Product image](https://novapart.co/image/farnell:3944172RL/)

**URL**: https://novapart.co/products/DMTH4014LPD-13/dual-mosfet-n-channel-40-v-436-a-0015-ohm
**SKU**: DMTH4014LPD-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.3540
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | PowerDI5060 |
| Operating Temperature Max | 175°C |
| Power Dissipation N Channel | 42.8W |
| Power Dissipation P Channel | 42.8W |
| Drain Source Voltage Vds N Channel | 40V |
| Drain Source Voltage Vds P Channel | 40V |
| Continuous Drain Current Id N Channel | 43.6A |
| Continuous Drain Current Id P Channel | 43.6A |
| Drain Source On State Resistance N Channel | 0.015ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3944172RL/)

**DMTH4014LPD** &, CC~*” **40V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

|**Product Summary**<br>~~Oe~~|**Product Summary**<br>~~Oe~~|**Product Summary**<br>~~Oe~~|
|---|---|---|
|**BVDSS**<br>**RDS(on) max**<br>**ID max**<br>**TC = +25°C**<br>40V<br>15mΩ@VGS= 10V<br>43.6A<br>25mΩ@VGS= 4.5V<br>33A<br>~~Oe~~|||
|**BVDSS**<br>~~Oe~~|**RDS(on) max**<br>~~Oe~~|**ID max**<br>**TC = +25°C**|
|40V|15mΩ@VGS= 10V|43.6A|
||25mΩ@VGS= 4.5V|33A|



## **Features and Benefits** 

- Rated to +175°C—Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application 

- High Conversion Efficiency 

- Low RDS(on) – Minimizes On State Losses 

- Low Input Capacitance 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- Backlighting 

- Power Management Functions 

   - Fast Switching Speed 

   - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

- DC-DC Converters 

## **Mechanical Data** 

- Case: PowerDI[®] 5060-8 (Type C) 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish—Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

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Site 1:<br>PowerDI5060-8 (Type C)<br>D1 D2<br>S1 D1<br>G1 D1<br>S2 D2 G1 G2<br>e@y G2 D2 68<br>Pin1  S1 S2<br>Pin Out<br>Top View  Bottom View  Equivalent Circuit<br>Top View<br>Site 2:<br>PowerDI5060-8/SWP (Type UXD)<br>D2<br>D1<br>S1 D1<br>G1 D1<br>S2 D2 G1 G2<br>Pin1  G2 D2<br>S2<br>Os 88 S1<br>Pin Out<br>Top View  Bottom View  Equivalent Circuit<br>Top View<br>PowerDI is a registered trademark of Diodes Incorporated.<br>**----- End of picture text -----**<br>


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DMTH4014LPD Document number: DS40343 Rev. 3 - 2 

November 2021 © Diodes Incorporated 

**DMTH4014LPD** 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMTH4014LPD-13|PowerDI5060-8 (Type C)|2,500/Tape & Reel|
|DMTH4014LPD-13|PowerDI5060-8/SWP(Type UXD)|2,500/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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D1 D1 D2 D2<br>      = Manufacturer’s Marking<br>TH4014LD = Product Type Marking Code<br>YYWW or YYWW = Date Code Marking<br>YY or YY = Year (ex: 21 = 2021)<br>TH4014LD WW = Week (01 to 53)<br>YY WW<br>S1 G1 S2 G2<br>**----- End of picture text -----**<br>


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DMTH4014LPD Document number: DS40343 Rev. 3 - 2 

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**DMTH4014LPD** 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|40|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 5)||TC= +25°C<br>TC= +100°C|ID|43.6<br>30.8|A|
|Continuous Drain Current (Note 6)|Steady<br>State|TA= +25°C<br>TA= +100°C|ID|10.6<br>7.5|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)|||IDM|174|A|
|Maximum Continuous Body Diode Forward Current (Note 6)|||IS|36|A|
|Avalanche Current, L = 0.3mH|||IAS|11.7|A|
|Avalanche Energy, L = 0.3mH|||EAS|20.5|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|2.4|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|62.6|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|42.8|W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|3.5|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **|||||||
|Drain-Source Breakdown Voltage<br>~~Ne~~|BVDSS|40|—|—|V|VGS= 0V, ID= 1mA|
|Zero Gate Voltage Drain Current<br>~~Ne~~|IDSS|—|—|1|µA|VDS= 32V, VGS= 0V|
|Gate-Source Leakage<br>~~Ne~~|IGSS|—|—|±100|nA|VGS= ±20V, VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **<br>~~Ne~~<br>~~Ne~~|||||||
|Gate Threshold Voltage<br>~~Ne~~<br>~~ee~~|VGS(th)<br>~~Ne~~<br>~~_~~|1<br>~~Ne~~<br>~~_~~|1.3<br>~~Ne~~|3<br>~~Ne~~|V<br>~~Ne~~|VDS= VGS, ID= 250μA<br>~~Ne~~|
|Static Drain-Source On-Resistance<br>~~ee~~<br>~~Ht~~|RDS(on)<br>~~_~~<br>~~Ht~~|—<br>~~_~~|11.8|15|mΩ<br>~~ttt~~|VGS= 10V, ID= 20A|
|||—<br>~~_~~<br>~~Htttt~~|17.9<br>~~ttt~~|25<br>~~ttt~~||VGS= 4.5V, ID= 15A<br>~~ttt~~|
|Diode Forward Voltage<br>~~ee~~<br>~~Ht~~|VSD<br>~~_~~<br>~~Ht~~|—<br>~~_~~<br>~~Htttt~~|0.9<br>~~ttt~~|1.2<br>~~ttt~~|V<br>~~ttt~~|VGS= 0V, IS= 20A<br>~~ttt~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~Htttt~~|||||||
|Input Capacitance<br>~~Ht~~<br>~~a~~|Ciss<br>~~Ht~~<br>~~a~~|—<br>~~Ht ttt~~<br>~~a~~|733<br>~~ttt~~<br>~~a~~|—<br>~~ttt~~<br>~~a~~|pF<br>~~ttt~~<br>~~a~~|VDS= 20V, VGS= 0V,<br>f = 1MHz<br>~~ttt~~<br>~~a~~|
|Output Capacitance<br>~~a~~|Coss<br>~~a~~|—<br>~~a~~|235<br>~~a~~|—<br>~~a~~|pF<br>~~a~~||
|Reverse Transfer Capacitance<br>~~a~~|Crss<br>~~a~~|—<br>~~a~~|24<br>~~a~~|—<br>~~a~~|pF<br>~~a~~||
|Gate Resistance<br>~~——~~|Rg|—<br>~~(~~|1.3<br>~~(~~|—<br>~~e~~|Ω<br>~~e~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~a~~<br>~~——~~|Qg<br>~~a~~|—<br>~~a~~<br>~~(~~|5.2<br>~~a~~<br>~~(~~|—<br>~~a~~<br>~~e~~|nC<br>~~a~~<br>~~e~~|VDS= 20V, ID= 20A<br>~~a~~<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~a~~<br>~~——~~|Qg<br>~~a~~|—<br>~~a~~<br>~~(~~|10.2<br>~~a~~<br>~~(~~|—<br>~~a~~<br>~~e~~|nC<br>~~a~~<br>~~e~~||
|Gate-Source Charge<br>~~a~~<br>~~——~~|Qgs<br>~~a~~|—<br>~~a~~<br>~~(~~|1.5<br>~~a~~<br>~~(~~|—<br>~~a~~<br>~~e~~|nC<br>~~a~~<br>~~e~~||
|Gate-Drain Charge<br>~~——~~<br>~~**e**e~~|Qgd<br>~~ee~~|—<br>~~(~~<br>~~ee~~|3.1<br>~~(~~<br>~~ee e~~|—<br>~~e~~<br>~~e~~|nC<br>~~e~~<br>~~e~~||
|Turn-On DelayTime<br>~~——~~<br>~~**e**e~~|tD(on) <br>~~ee~~|—<br>~~(~~<br>~~ee~~|3.5<br>~~(~~<br>~~ee e~~|—<br>~~e~~<br>~~e~~|ns<br>~~e~~<br>~~e~~|VDD= 20V, VGS= 10V,<br>RG= 1.6Ω, ID= 20A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~**e**e~~|tR<br>~~ee~~|—<br>~~ee~~|5.7<br>~~ee e~~|—<br>~~e~~|ns<br>~~e~~||
|Turn-Off Delay Time<br>~~**e**e~~<br>~~e~~|tD(off) <br>~~ee~~<br>~~e~~|—<br>~~ee~~<br>~~e~~|8.7<br>~~ee e~~<br>~~e~~|—<br>~~e~~<br>~~e~~|ns<br>~~e~~<br>~~e~~||
|Turn-Off Fall Time<br>~~**e**e~~<br>~~e~~|tF<br>~~ee~~<br>~~e~~|—<br>~~ee~~<br>~~e~~|1.8<br>~~ee e~~<br>~~e~~|—<br>~~e~~<br>~~e~~|ns<br>~~e~~<br>~~e~~||
|Body Diode Reverse Recovery Time<br>~~**e**e ~~<br>~~oro~~|tRR<br> ~~ee ~~<br>~~oro~~|—<br> ~~ee~~<br>~~oro~~|11.9<br>~~ee e~~<br>~~oro~~|—<br>~~e~~<br>~~oro~~|ns<br>~~e~~<br>~~oro~~|IF= 15A, di/dt = 400A/μs<br>~~ee~~<br>~~oro~~|
|Body Diode Reverse Recovery Charge<br>~~oro~~|QRR<br>~~oro~~|—<br>~~oro~~|9.28<br>~~oro~~|—<br>~~oro~~|nC<br>~~oro~~||



8. Guaranteed by design. Not subject to product testing. 

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30.0 30<br> VGS = 4.0V  VDS = 5.0V<br>25.0  VGS = 4.5V  25<br> VGS = 10V   VGS = 3.5V<br>20.0 eo 20 ee ) cee<br>i _ a ae<br>15.0  VGS = 3.3V  15<br>fo ee oe<br>10.0 10<br>[ a ee |<br> VGS = 3.0V  TJ = 175 ℃<br>5.0 5 TJ = 150 ℃ TJ = 85 ℃<br> VGS = 2.7V  TJ = 125 ℃ TJ = 25 ℃<br>TJ = -55 ℃<br>0.0 Yop-— ___ 0 oeBy<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.03 0.14<br>ID = 20A<br>0.12 a e<br>0.03<br>0.1 VL LEE EL<br>0.02  VGS = 4.5V<br>0.08 PPLE EEE LL<br>0.02<br>0.06 aaa<br>0.01  VGS = 10V<br>0.04 PP EL EEE<br>ID = 15A<br>0.01<br>0.02<br>P oi [tty] LL<br>0.00 0 | Pee<br>0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance  vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.03 2.4<br>VGS = 10V<br>2.2 PT | |EET<br>0.025<br>2<br>0.02 TJ = 125 [o] C  TJ = 150 [o] C  TJ = 175 [o] C  1.8  VGS = 10V, ID = 20A<br>1.6<br>0.015 ==> 1.4 a<br>TJ = 85 [o] C<br>1.2<br>0.01 TJ = 25 [o] C<br>a 1 sane tie<br>TJ = -55 [o] C   VGS = 4.5V, ID = 15A<br>0.005 —— = 0.8 o o<br>0.6<br>0 Pt ttt to 0.4 EEE EEE<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with<br>Temperature  Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(Ω)<br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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0.04<br>0.03<br> VGS = 4.5V, ID = 15A<br>0.02<br>0.01  VGS = 10V, ID = 20A<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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3<br>2.5<br>2<br>ID = 1mA<br>1.5 rE TTI<br>Bans eae<br>1 o o ID = 250μA  o<br>0.5 ft PsS<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


Figure 8. Gate Threshold Variation vs. Junction Temperature 

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30 10000<br>VGS = 0V  f = 1MHz<br>25 eee |e p S<br>1000 Ciss<br>20 e e |e<br>15 ee? TJ = 175 [o] C  |i 100 == e a Coss  e<br>/ Ne<br>TJ = 150 [o] C<br>10 TTJJ = 85 = 125 [o] C  [o] C  All| 10 = Crss  =<br>Ht | | oe<br>5 TJ = 25 [o] C  II, ———————<br>TJ = -55 [o] C<br>0 ZB) YT} 1 fFpS| [| | [| [| | | |<br>0 0.3 0.6 0.9 1.2 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10 1000<br>R<br>DS(ON) PW = 1µs<br>Limited<br>8 100<br>6 10<br>PW = 10µs<br>PW = 100µs<br>4 1<br>PW = 1ms<br>2 VDS = 20V, ID = 20A  0.1 TTSingle Pulse J(Max) C = 25= 175 ℃ ℃ ee PWP = 10msW = 100ms Ay iil<br>DUT on Infinite  PW = 1s<br>Heatsink<br>0 0.01 VGS = 10V  reeeeeee ee ee<br>0 2 4 6 8 10 12 0.1 1 10 100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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'nm 

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**----- Start of picture text -----**<br>
1<br>D=0.7<br>e eeeee eee<br>D=0.5<br>C ee<br>D=0.9<br>D=0.3  ATT OP ce |<br>e e ee lll a<br>0.1 IB pt D=0.1  E |- lif|C|arree|F_ Jey le a LUI TL TIE<br>pT LT aee<br>D=0.05<br>Fy ATT thot<br>2 a<br>E E<br>0.01 D=0.02<br>ayreOe e | UIIeeUI LUIeoLT LT LU<br>OH(AAI D=0.01  ERAa a eeeA SS A HH A HHH<br>D=0.005<br>A C HIT<br>Z| e h RθJC (t) = r(t) * RθJC LETH<br>D=Single Pulse  RθJC = 3.5 ℃ /W<br>Duty Cycle, D = t1/t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **Site 1:** 

**PowerDI5060-8 (Type C)** 

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Po PowerDI5060-8 (Type C)<br>Dim  Min  Max  Typ<br>esor A  0.90  1.10  1.00<br>D - or A1  0  0.05  0.02<br>D1 b  0.33  0.51  0.41<br>b1  0.300  0.366 0.333<br>0 (4x)<br>b2  0.20  0.35  0.25<br>c  0.23  0.33  0.277<br>x E1 E c A1 D  5.15 BSC<br>D1  4.85  4.95  4.90<br>y Seating Plane D2  1.40  1.60  1.50<br>e D3  -  -  3.98<br>RU, 1 = EEEE E  6.15 BSC<br>Ø1.000 Depth 0.07±0.030 0 1(4x) E1  5.75  5.85  5.80<br>E2  3.56  3.76  3.66<br>e  1.27BSC<br>b1(8x) DETAIL A<br>e/2 k  -  -  1.27<br>b(8x) k1  0.56  -  -<br>ttaiepoo 1 h ——esa L  0.51  ee 0.71  0.61<br>b2(2x)<br>L D3 k La  0.51  0.71  0.61<br>k1 A L1  0.05  0.20  0.175<br>L4  -  -  0.125<br>L4<br>E2 a D2 ceh | Gammel t= M  3.50  3.71  3.605<br>Gili D2 cea i M aan DETAIL A FF x  -  -  1.400  44<br>M etledl ~ ETE y -  -  1.900<br>oe θ  10°  12°  11°<br>La L1 Tr θ1  6°  8°  7°<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


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**DMTH4014LPD** 

## **Package Outline Dimensions** (continued) 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [521 x 358] intentionally omitted <==**

**----- Start of picture text -----**<br>
Site 2:<br>PowerDI5060-8/SWP (Type UXD)<br>D<br>D1<br>8 5<br>PowerDI5060-8/SWP<br>(Type UXD)<br>Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>A1  0.00 0.05 --<br>Boe E1 E A1 b 0.30 0.50 0.41<br>1.900 1.400 c Seating Plane b2  0.20 0.35 0.25<br>b4  0.25REF<br>e c  0.230 0.330 0.277<br>D  5.15 BSC<br>D1  4.70 5.10 4.90<br>1 4 D2  1.46 1.66 1.55<br>Ø1.000 Depth 0.07±0.030 DETAIL A D3  3.78 4.18 3.98<br>E  6.40 BSC<br>e/2<br>b(8x) E1  5.60 6.00 5.80<br>1 E2  3.46 3.86 3.66<br>L E2a 4.195 4.595 4.395<br>e 1.27BSC<br>D3 k k  1.05 --  --<br>b2(2x) tet fore<br>L  0.635 0.835 0.735<br>La  0.635 0.835 0.735<br>W A L1  0.200 0.400 0.300<br>E2 D2 D2 M  3.205 4.005 3.605<br>E3 M W  0.025 0.225 0.125<br>θ  10°  12°  11°<br>DETAIL A θ1  6°  8°  7°<br>La All Dimensions in mm<br>8<br>iit Saee<br>vA b4(8x) lis L1 ===<br>4x0<br>4x0<br>**----- End of picture text -----**<br>


8 of 10 **www.diodes.com** 

DMTH4014LPD Document number: DS40343 Rev. 3 - 2 

November 2021 © Diodes Incorporated 

**DMTH4014LPD** 

## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **Site 1:** 

**PowerDI5060-8 (Type C)** 

**==> picture [341 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
X4<br>8<br>Value<br>Dimensions<br>(in mm)<br>C  1.270<br>Y1 G  0.660<br>X3 X2 G1  0.820<br>Y2 X  0.610<br>X1  3.910<br>Y3<br>G1 X2  1.650<br>X3  1.650<br>i X1 X4  4.420<br>Y  1.270<br>Y1  1.020<br>Y(4x)<br>Y2  3.810<br>ian = Y3 6.610<br>1<br>G<br>‘coo’ X C<br>**----- End of picture text -----**<br>


**Site 2:** 

**PowerDI5060-8/SWP (Type UXD)** 

**==> picture [135 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
: X2 |<br>Y1<br>Y2 X1 X1<br>Y3<br>G1<br>C<br>Y(4x)<br>“Toon X(8x) G<br>**----- End of picture text -----**<br>


|**Dimensions**<br>**Value**<br>**(in mm)in mm))**<br>1.2700<br>0.660<br>0.820<br>0.610<br>3.910<br>1.650<br>1.650<br>4.420<br>1.2700<br>1.020020200<br>3.810.810810100<br>6.610<br>~~=~~||
|---|---|
|**Dimensions**|**Value**<br>**(in mm)**|
|**C**|**(in mm)**<br>1.270|
|**G**|0.660|
|**G1**|0.820|
|**X**|0.610|
|**X1**|1.720|
|**X2**|4.420|
|**Y**|1.270|
|**Y1**|1.020|
|**Y2**|3.810|
|**Y3**|6.610|



9 of 10 **www.diodes.com** 

DMTH4014LPD Document number: DS40343 Rev. 3 - 2 

November 2021 © Diodes Incorporated 

**DMTH4014LPD** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

10 of 10 **www.diodes.com** 

DMTH4014LPD Document number: DS40343 Rev. 3 - 2 

November 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH4014LPD-13/dual-mosfet-n-channel-40-v-436-a-0015-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth4014lpd-13/mosfet-dual-n-ch-40v-43-6a/dp/3944172RL)
---

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