# Power MOSFET, N Channel, 40 V, 11.5 A, 9800 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3702812RL/)

**URL**: https://novapart.co/products/DMTH4014LFVWQ-13/power-mosfet-n-channel-40-v-115-a-9800-ohm-powerdi
**SKU**: DMTH4014LFVWQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2040
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 3.1W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 3.1W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0098ohm |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 11.5A |
| Drain Source On State Resistance | 9800µohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3702812RL/)

**DMTH4014LFVWQ 40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC =**+**25°C**|
|---|---|---|
|40V|13.7mΩ @ VGS= 10V|49.8A|
||26mΩ @ VGS= 4.5V|36.7A|


## **Features and Benefits** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- Low RDS(ON) – Ensures On State Losses are Minimized 

- Excellent Qgd  x RDS (ON) Product (FOM) 

- Wettable Flank for Improved Optical Inspection 

- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

- **The DMTH4014LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- Case: PowerDI[®] 3333-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

- Weight: 0.072 grams (Approximate) 

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PowerDI3333-8 (SWP) (Type UX)  D<br>D<br>D<br>D<br>D<br>G<br>G<br>S<br>S<br>S S<br>—_<br>Top View  Pin1  Bottom View  Equivalent Circuit<br> Information (Note 4)<br>Part Number Case Packaging<br>DMTH4014LFVWQ-7  PowerDI3333-8 (SWP) (Type UX) 2,000/Tape & Reel<br>DMTH4014LFVWQ-13 PowerDI3333-8 (SWP) (Type UX) 3,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

## **PowerDI3333-8 (SWP) (Type UX)** 

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H4W<br>YYWW<br>**----- End of picture text -----**<br>


H4W = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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**DMTH4014LFVWQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|40|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 6), VGS= 10V|TC= +25C<br>TC= +100C|ID|49.8<br>35.2|A|
|Continuous Drain Current (Note 5), VGS= 10V|TA= +25C<br>TA= +100C|ID|11.5<br>8.1|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)||IDM|180|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)||IS|45|A|
|Pulsed BodyDiode Forward Current(10μs Pulse,DutyCycle = 1%)||ISM|180|A|
|Avalanche Current,L = 0.1mH||IAS|19.8|A|
|Avalanche Energy,L = 0.1mH||EAS|19.6|mJ|


## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|3.1|W|
|Thermal Resistance,Junction to Ambient(Note 5)||RJA|48.6|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|57.7|W|
|Thermal Resistance,Junction to Case(Note 6)||RJC|2.5|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +175|°C|


**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~———~~|**Symbol**<br>~~———~~|**Min**<br>~~———~~|**Typ **<br>~~———~~|**Max**<br>~~———~~|**Unit**<br>~~———~~|**Test Condition**<br>~~———~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~———~~|||||||
|Drain-Source Breakdown Voltage<br>~~———~~|BVDSS<br>~~———~~|40<br>~~———~~|—<br>~~———~~|—<br>~~———~~|V<br>~~———~~|VGS= 0V,ID= 1mA<br>~~———~~|
|Zero Gate Voltage Drain Current<br>~~———~~|IDSS<br>~~———~~|—<br>~~———~~|—<br>~~———~~|1<br>~~———~~|μA<br>~~———~~|VDS= 32V,VGS= 0V<br>~~———~~|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)<br>~~a~~|1<br>~~a~~|—<br>~~a~~|3<br>~~a~~|V<br>~~a~~|VDS= VGS,ID= 250μA<br>~~a~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~a~~|—<br>~~a~~|9.8<br>~~a~~|13.7<br>~~a~~|mΩ<br>~~a~~|VGS= 10V,ID= 20A<br>~~a~~|
|||—<br>~~a~~|14.5<br>~~a~~|26<br>~~a~~||VGS= 4.5V,ID= 10A<br>~~a~~|
|Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|—<br>~~a~~|0.9<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|VGS= 0V,IS= 20A<br>~~a~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~eeee~~|||||||
|Input Capacitance<br>~~—————~~|Ciss<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|750<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|pF<br>~~—————~~<br>~~ee~~|VDS= 20V, VGS= 0V,<br>f = 1MHz<br>~~—————~~|
|Output Capacitance<br>~~—————~~|Coss<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|225<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~—————~~|Crss<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|21<br>~~—————~~<br>~~ee~~|—<br>~~—————~~<br>~~ee~~|||
|Gate Resistance|Rg<br>~~ee~~|—<br>~~ee~~|1.1<br>~~ee ~~|—<br> ~~ee~~|Ω<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= 4.5V)|Qg|—|5.7|—|nC|VDS= 20V, ID= 20A|
|Total Gate Charge(VGS= 10V)|Qg|—|11.2|—|||
|Gate-Source Charge|Qgs|—|2.0|—|||
|Gate-Drain Charge|Qgd|—|2.2|—|||
|Turn-On DelayTime|tD(ON)|—|3.5|—|ns<br>~~———~~<br>~~ee~~|VDD= 20V, VGS= 10V,<br>Rg= 1.6Ω, ID= 20A<br>~~———~~|
|Turn-On Rise Time|tR|—|4.6|—|||
|Turn-Off DelayTime|tD(OFF)<br>~~ee~~|—<br>~~ee~~|12.4<br>~~ee~~|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~———~~|tF<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|4.9<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|||
|BodyDiode Reverse RecoveryTime<br>~~———~~|tRR<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|11.3<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|ns<br>~~———~~<br>~~ee~~|IF= 15A, di/dt = 400A/μs<br>~~———~~|
|BodyDiode Reverse RecoveryCharge<br>~~———~~|QRR<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|9.5<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|nC<br>~~———~~<br>~~ee~~||


6. Thermal resistance from junction to soldering point (on the exposed drain pad). 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

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DMTH4014LFVWQ<br>40.0 20<br>35.0 ais VGS V= 8.0VGS = 10.0V — VDS = 5V |<br>VGS = 6.0V<br>30.0 VGS = 4.5V 15<br>25.0 VGS = 4.0V VGS = 3.5V<br>20.0 10<br>15.0 [-— VGS = 3.2V — -<br>TJ = 125℃<br>10.0 VGS = 3.0V 5 TJ = 175℃ TJ = 85℃<br>5.0 TJ = 150℃ TJ = 25℃<br>TJ = -55℃<br>0.0 A aa 0 Dy<br>0 1 2 3 4 5 0 1 2 3 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.018 0.08<br>0.016 77> 0.07 fo<br>ID = 20A<br>0.06<br>0.014<br>Se VGS = 4.5V 0.05 AR ID = 10A E<br>0.012<br>0.04<br>0.01 p pp de SHEL  C CE<br>0.03<br>VGS = 10V<br>0.008 so 0.02 FHEE EEE<br>0.006 P| | ft tt 0.01 PE REET TT<br>0.004 4 0 CPPCC<br>0 2 4 6 8 10 12 14 16 18 20<br>0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.02 2.2<br>0.018 VGS = 10V<br>—_ TJ = 150℃ TJ = 175℃ 2 COOLIO<br>0.016<br>1.8<br>0.014 See<br>TJ = 125℃ 1.6 VGS = 10V, ID = 20A<br>0.012<br>TJ = 85℃<br>0.01 1.4<br>a H OE<br>TJ = 25℃<br>0.008<br>1.2<br>0.006 E r TJ = -55℃ | yw<br>1 VGS = 4.5V, ID = 10A<br>0.004<br>0.002 e e 0.8 A e<br>0 ns 0.6 PEELEE L EL<br>0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Junction<br>Junction Temperature Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.026 3<br>0.024 | | | | | hr mT<br>0.022 2.5<br>0.02<br>0.018 VGS = 4.5V, ID = 10A 2<br>0.016 ID = 1mA<br>0.014 Sengeeea  acese 1.5 i ee<br>0.012<br>0.01 1 ID = 250μA<br>0.008<br>0.006 VGS = 10V, ID = 20A<br>oe 0.5 HH RRS<br>0.004<br>ee Pi SS<br>0.002<br>0 FEE EEE 0 PTETTT EE<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 8. Gate Threshold Variation vs. Junction<br>Figure 7. On-Resistance Variation with Junction<br>Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Figure 7. On-Resistance Variation with Junction<br>Temperature<br>Temperature<br>20 10000<br>| a<br>VGS = 0V f = 1MHz<br>15 e e) 1000 Ciss<br>| sess o<br>10 e e 100 a Coss<br>|<br>HT ee<br>5 TJ = 175 [o] C fi TJT = 85J = 125 [o] C [o] C 10 fi a Crss een<br>TJ = 150 [o] C TJ = 25 [o] C<br>TJ = -55 [o] C<br>0 D W H}) 1 = ==. = = ==<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>11 1000<br>R<br>10 DS(ON) PW = 1µs<br>Limited<br>9<br>100<br>8<br>7 VDS = 20V, ID = 20A 10 PW = 10µs<br>6 PW = 100µs<br>PW = 1ms<br>5<br>PW = 10ms<br>1<br>4 | | [yf | | | TJ(Max) = 175℃ | PW = 100ms                                        PW = 1s LAY!<br>32 |7|| 0.1 TSingle PulseC = 25℃<br>DUT on Infinite<br>1 Heatsink<br>0 Y| | | | | 0.01 VGS = 10V oh<br>0 2 4 6 8 10 12 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>Figure 11. Gate Charge<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMTH4014LFVWQ** 

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1 ee  ___ e- —— —<br>SS See<br>T D = 0.7 T ee<br>fa TT Om OT TT Pp<br>D = 0.5<br>e e eect a TTT<br>SS ai eee RE a EN<br>D = 0.3<br>| eal4 D = 0.9 a<br>0.1 Ie eIae a<br>PE D = 0.1 eR<br>ae/a<br>|rrAm<br>D = 0.05<br>F ATTT HTT<br>A Pe<br>BA | FT Fe PR A<br>D = 0.02<br>Ck LU IE IE, TTT<br>D = 0.01<br>0.01 SametNPEt M D = 0.005 ot lllaEEEELIeeEES0 0  EEESOCANEOO QOCTIEEEOO LIEEEEOO LIEGGGEE OG GOOEHH<br>E PT D = Single Pulse [TT] a THea ee<br>RθJC (t) = r(t) * RθJC<br>RθJC = 2.5℃/W<br>Duty Cycle, D = t1/t2<br>0.001 sii afi St ad<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMTH4014LFVWQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI3333-8 (SWP) (Type UX)<br>D<br>A PowerDI3333-8 (SWP)<br>D1 A1 (Type UX)<br>Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>A1  0.00 0.05 --<br>b  0.25 0.40 0.32<br>c  0.10 0.25 0.15<br>E1 E<br>D  3.20 3.40 3.30<br>D1  2.95 3.15 3.05<br>D2  2.30 2.70 2.50<br>E  3.20 3.40 3.30<br>0 E1  2.95 3.15 3.05<br>E2  1.60 2.00 1.80<br>Detail A i c — E3 0.95 1.35 1.15<br>E4  0.10 0.30 0.20<br>Detail A<br>L e    0.65<br>k  0.50 0.90 0.70<br>L  0.30 0.50 0.40<br>E3 E4 θ  0° 12° 10°<br>E2<br>All Dimensions in mm<br>t 6 S Fee<br>0.050<br>D2 0.150<br>k<br>L<br>e<br>b aE<br>yout out<br>PowerDI3333-8 (SWP) (Type UX)<br>Dimensions Value (in mm)<br>X3<br>C  0.650<br>X1 X2 X  0.420<br>Y1 X1  0.420<br>X2  0.230<br>X3  2.600<br>Y2 X4  3.500<br>Y  0.700<br>Y5 Y4 Y1  0.550<br>fi Y2  1.650<br>Y6 Y3  0.600<br>Y4  2.450<br>Y5  0.400<br>X4 Y3 Y6  3.700<br>a Y<br>X<br>“ C qu<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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**DMTH4014LFVWQ** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2020 Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMTH4014LFVWQ Document number: DS40889  Rev. 3 - 2 

November 2020 © Diodes Incorporated 


## Links

- [View this product on Novapart](https://novapart.co/products/DMTH4014LFVWQ-13/power-mosfet-n-channel-40-v-115-a-9800-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth4014lfvwq-13/mosfet-n-ch-40v-11-5a-powerdi/dp/3702812RL)
---

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