# Power MOSFET, N Channel, 30 V, 100 A, 1300 µohm, PowerDI5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3589214/)

**URL**: https://novapart.co/products/DMTH31M7LPSQ-13/power-mosfet-n-channel-30-v-100-a-1300-ohm
**SKU**: DMTH31M7LPSQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4630
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 113W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI5060 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 1300µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3589214/)

**DMTH31M7LPSQ** - **175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

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## **Product Summary** 

|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>30V<br>1.7mΩ @ VGS= 10V<br>100A<br>2.4mΩ @ VGS= 4.5V<br>80A|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>30V<br>1.7mΩ @ VGS= 10V<br>100A<br>2.4mΩ @ VGS= 4.5V<br>80A|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>30V<br>1.7mΩ @ VGS= 10V<br>100A<br>2.4mΩ @ VGS= 4.5V<br>80A|
|---|---|---|
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|30V|1.7mΩ @ VGS= 10V|100A|
||2.4mΩ @ VGS= 4.5V|80A|



## **Features and Benefits** 

- Rated to +175°C—Ideal for High Ambient Temperature Environments 

- Low RDS(ON) – Minimizes On-State Losses 

- Excellent Qgd x RDS(ON) Product (FOM) 

- Advanced Technology for DC-DC Converters 

- Small Form Factor Thermally Efficient Package Enables Higher Density End Products 

- 100% Unclamped Inductive Switching – Ensures More Reliability 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen- and Antimony-Free. “Green” Device (Note 3)** 

- **The DMTH31M7LPSQ is suitable for automotive applications requiring specific change control; is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949:2016 certified facilities.** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is AEC-Q101 qualified, supported by a PPAP, and is ideal for use in: 

## **Mechanical Data** 

      - Case: PowerDI **[®]** 5060-8 

   - 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

PowerDI5060-8 

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|Top View|Bottom View|Bottom View||Internal Schematic|Internal Schematic|Top View<br>Pin Configuration|
|---|---|---|---|---|---|---|
|**g Information** (Note 4)|||||||
||||||||
|**Part Number**|||**Case**|||**Packaging**|
|DMTH31M7LPSQ-13|||PowerDI5060-8|||2,500/Tape & Reel|



## **Ordering Information** (Note 4) 

Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

_PowerDI is a registered trademark of Diodes Incorporated._ DMTH31M7LPSQ Document number: DS42061  Rev. 2 - 2 

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**DMTH31M7LPSQ** 

## **Marking Information** 

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D D D D<br>Ji          = Manufacturer’s Marking<br>TH31M7LS = Product Type Marking Code<br>YYWW = Date Code Marking<br>TH31M7LS YY = Year (ex: 19 = 2019)<br>WW = Week (01 to 53)<br>YY WW<br>S S S G<br>**----- End of picture text -----**<br>


## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**|||**Symbol**<br>**Value**|**Unit**|
|Drain-Source Voltage<br>VDSS<br>30<br>V<br>Gate-Source Voltage<br>VGSS<br>±16<br>V<br>Continuous Drain Current, VGS= 10V (Note 6)<br>TA= +25°C<br>ID<br>30<br>A<br>TA= +100°C<br>23<br>Continuous Drain Current, VGS= 10V (Note 7)<br>TC= +25°C<br>ID<br>100<br>A<br>TC= +100°C<br>80<br>Maximum Continuous BodyDiode Forward Current(Note 6)<br>IS<br>2.8<br>A<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~es~~<br>~~eee~~<br>~~a~~<br>~~ees~~<br>~~eee~~|||||
|Pulsed Drain Current(380µs Pulse,DutyCycle = 1%)<br>IDM<br>400<br>A<br>Pulsed BodyDiode Forward Current(380µs Pulse,DutyCycle = 1%)<br>ISM<br>400<br>A<br>Avalanche Current,L=0.1mH(Note 8)<br>IAS<br>65<br>A<br>Avalanche Energy, L=0.1mH(Note 8)<br>EAS<br>215<br>mJ<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||||
|**Thermal Characteristics**|||||
||||||
|**Characteristic**|||**Symbol**<br>**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C||PD<br>1.3|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState||RθJA<br>94|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C||PD<br>2.4|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState||RθJA<br>52|°C/W|
|Total Power Dissipation(Note 7)|TC= +25°C||PD<br>113|W|
|Thermal Resistance,Junction to Case(Note 7)|||RθJC<br>1.1|°C/W|
|Operatingand Storage Temperature Range|||TJ,TSTG<br>-55 to +175|°C|



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## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 9)**|||||||
|Drain-Source Breakdown Voltage<br>~~es~~|BVDSS<br>~~es~~|30<br>~~es~~|—<br>~~es~~|—<br>~~es~~|V<br>~~es~~|VGS= 0V,ID= 250μA<br>~~es~~|
|Zero Gate Voltage Drain Current<br>~~es~~|IDSS<br>~~es~~|—<br>~~es~~|—<br>~~es~~|1<br>~~es~~|μA<br>~~es~~|VDS= 24V,VGS= 0V<br>~~es~~|
|Gate-Source Leakage<br>~~es~~|IGSS<br>~~es~~|—<br>~~es~~|—<br>~~es~~|±100<br>~~es~~|nA<br>~~es~~|VGS= ±16V,VDS= 0V<br>~~es~~|
|**ON CHARACTERISTICS(Note 9)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1.0<br>~~ee~~<br>~~=~~|—<br>~~ee~~<br>~~=~~|3.0<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~RR~~|RDS(ON)<br>~~RR~~|—<br>~~RR~~<br>~~=~~|1.3<br>~~RR~~<br>~~=~~|1.7<br>~~RR~~<br>~~ee~~|mΩ<br>~~RR~~<br>~~ee~~|VGS= 10V,ID= 20A<br>~~RR~~<br>~~ee~~|
|||—<br>~~RR~~<br>~~=~~|1.9<br>~~RR~~<br>~~=~~|2.4<br>~~RR~~<br>~~ee~~||VGS= 4.5V,ID= 20A<br>~~RR~~<br>~~ee~~|
|Diode Forward Voltage<br>~~RR~~|VSD<br>~~RR~~|—<br>~~RR~~<br>~~=~~|0.7<br>~~RR~~<br>~~=~~|1.0<br>~~RR~~<br>~~ee~~|V<br>~~RR~~<br>~~ee~~|VGS= 0V,IS= 2A<br>~~RR~~<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 10)**<br>~~= ee~~<br>~~a~~<br>~~a~~|||||||
|Input Capacitance<br>~~a~~<br>~~——~~|Ciss<br>~~a~~<br>~~——~~<br>~~a~~|—<br>~~a~~<br>~~——~~<br>~~a~~|5741<br>~~a~~<br>~~——~~<br>~~a~~|—<br>~~a~~<br>~~——~~|pF<br>~~a~~<br>~~——~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~a~~<br>~~——~~|
|Output Capacitance<br>~~——~~|Coss<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~|2119<br>~~——~~<br>~~a~~|—<br>~~——~~|||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~|424<br>~~——~~<br>~~a~~|—<br>~~——~~|||
|Gate Resistance<br>~~——~~|Rg<br>~~——~~<br>~~a~~|—<br>~~——~~<br>~~a~~|1.5<br>~~——~~<br>~~a~~|—<br>~~——~~|Ω<br>~~——~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~——~~|
|Total Gate Charge(VGS= 10V)<br>~~a~~|Qg<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~a~~|90<br>~~a~~<br>~~a~~|—<br>~~a~~|nC<br>~~i~~|VDD= 15V, ID= 20A<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)|Qg|—|45|—|||
|Gate-Source Charge|Qgs|—|11.6|—|||
|Gate-Drain Charge|Qgd|—|21.6<br>~~i~~|—<br>~~i~~|||
|Turn-On DelayTime<br>~~————~~|tD(ON)<br>~~————~~|—<br>~~————~~|6.9<br>~~————~~<br>~~i~~|—<br>~~————~~<br>~~i~~|ns<br>~~————~~<br>~~i~~|VDD= 15V, VGS= 10V,<br>Rg= 3Ω, ID= 20A<br>~~————~~<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR<br>~~————~~|—<br>~~————~~|16.5<br>~~————~~<br>~~i~~|—<br>~~————~~<br>~~i~~|||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)<br>~~————~~|—<br>~~————~~|49.6<br>~~————~~<br>~~i~~|—<br>~~————~~<br>~~i~~|||
|Turn-Off Fall Time<br>~~————~~|tF<br>~~————~~|—<br>~~————~~|34.5<br>~~————~~<br>~~i~~|—<br>~~————~~<br>~~i~~|||
|Reverse RecoveryTime<br>~~—_—_——————~~|tRR<br>~~—_—_——————~~|—<br>~~—_—_——————~~|32.5<br>~~i~~<br>~~—_—_——————~~|—<br>~~i~~<br>~~—_—_——————~~|ns<br>~~i~~<br>~~—_—_——————~~|IF= 15A,dI/dt = 500A/μs<br>~~ee~~<br>~~—_—_——————~~|
|Reverse RecoveryCharge<br>~~—_—_——————~~|QRR<br>~~—_—_——————~~|—<br>~~—_—_——————~~|55<br>~~—_—_——————~~|—<br>~~—_—_——————~~|nC<br>~~—_—_——————~~|IF= 15A,dI/dt = 500A/μs<br>~~—_—_——————~~|



Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

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30.0 30<br> VGS = 2.6V  VDS = 5V<br>25.0 B oe  VGS=3.0V  ) 25<br> VGS = 3.5V<br>20.0  VGS = 4.0V  20<br>ae  ||<br> VGS = 4.5V<br>15.0  VGS = 10.0V  15<br> VGS = 2.4V<br>10.0 aa 10 ee TJ=125 ℃ e<br>TJ=150 ℃ TJ=85 ℃<br>5.0 | 5 TJ=175 ℃ /; TJ=25 ℃<br> VGS = 2.2V  TJ=-55 ℃<br>0.0 e a 0 DL<br>0 1 2 3 4 5 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.0030 0.015<br>0.0025<br>0.012<br>0.0020  VGS = 4.5V<br>0.009<br>0.0015<br>0.006 ID = 20A<br>0.0010  VGS = 10.0V<br>0.003<br>0.0005<br>0.0000 0<br>0 5 10 15 20 25 30 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.003 2.4<br>VGS = 10V  2.2<br>0.0025 e e 2 eee<br>0.002 TJ=175 ℃ TJ=150 ℃ 1.8  VGS = 10V, ID = 20A<br>1.6<br>0.0015 Se T —SS= J=125 ℃ e s 1.4 y e<br>TJ=85 ℃<br>1.2<br>0.001 TJ=25 ℃ 1  VGS = 4.5V, ID = 20A<br>0.0005 —— TJ=-55 ℃ P|—ft | 0.8 eSeat er<br>0.6<br>0 Serer} 0.4 EEERRREEE<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>)<br>Ω<br>, DRAIN-SOURCE ON-RESISTANCE (<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>)<br>Ω<br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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0.004 2<br>1.8<br>pt ft | | dt |<br>1.6<br>mf | | ttt |<br>0.003<br>1.4 ID = 1mA<br>0.002  VGS = 4.5V, ID = 20A  1.21 ePoTER e e<br>0.8 ID = 250μA<br>0.6 OS<br>| | | ROW<br>0.001<br> VGS = 10V, ID = 20A  0.4<br>pf | | | tt TNS<br>0.2<br>0 0 CEEEEEEe<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 8. Gate Threshold Variation vs. Junction<br>Figure 7. On-Resistance Variation with Temperature<br>Temperature<br>30 10000<br>VGS = 0V  Ciss  f=1MHz<br>25 m n ————_=<br>20<br>| ee ee Coss<br>15 1000<br>eee |e<br>10 TJT = 150J = 125 ℃℃ Ht TJ = 85 ℃ =a Crss  ee==—<br>5 TJ = 175 ℃ TJ = 25 ℃<br>TJ = -55 ℃<br>0 100<br>0 0.3 LLL) 0.6 0.9 1.2 0 |oo| 5 | 10 | 15 20 | 25 A 30<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10 1000<br>RDS(ON) Limited  PW =10µs<br>PW =1µs<br>8<br>100<br>PW =100µs<br>6 PW =1ms<br>10 PW =10ms<br>PW =100ms<br>4 DC<br>VDS = 15V, ID = 15A<br>1<br>2 TJ(Max) = 175 ℃  TC = 25 ℃<br>Single Pulse<br>DUT on Infinite Heatsink<br>0 0.1 VGS= 10V  EN<br>|<br>0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>)<br>(Ω<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) VGS(TH)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>SSS SSS SS SSS<br>D=0.7<br>D=0.5<br>aa Sa Ro<br>mmm A<br>D=0.3<br>Pll TIME Leg | UII D=0.9  LATENT<br>0.1 A TT LT LTETN E TT<br>D=0.1<br>e e ares eee et ee et<br>P eT | mT TTGFTT th<br>Pe D=0.05  e AI SER TER LTR EFA ETE EEF<br>Ltt 1 EA TE TE<br>D=0.02<br>cst 0 0<br>OI D=0.01<br>0.01<br>Se CP D=0.005  ww LUNI CTLeeeLNee<br>PAE PPT TPPP<br>D=Single Pulse<br>Finn icea EPRT ECE EREil<br>RθJC(t) = r(t) * RθJC<br>RθJC = 1.1 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI5060-8<br>D Dim  Min  Max  Typ<br>D1 Detail A A  0.90 1.10 1.00<br>0 ( 4X) A1  0.00  0.05  −<br>b 0.33 0.51  0.41<br>c b2  0.200 0.350 0.273<br>A1<br>b3  0.40 0.80 0.60<br>E1 E c  0.230 0.330 0.277<br>= — S555 D  5.15 BSC<br>e D1  4.70 5.10 4.90<br>D2  3.70 4.10 3.90<br>1 0 1 ( 4X) D3  3.90 4.30 4.10<br>Oty i E  6.15 BSC<br>E1  5.60 6.00 5.80<br>b ( 8X) e/2 E2  3.28 3.68 3.48<br>1 E3 3.99 4.39 4.19<br>L he b2 ( 4X) FSee= e 1.27 BSC<br>D3 K G  0.51  0.71  0.61<br>K  0.51 −  −<br>L  0.51  0.71  0.61<br>A E3 E2 D2 b3 ( 4X) L1  0.100 0.200 0.175<br>M M  3.235 4.035 3.635<br>M1 M1  1.00 1.40 1.21<br>Detail A Θ  10°  12°  11°<br>Θ1  6°  8°  7°<br>G L1<br>; : ——— All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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**==> picture [115 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions  Value (in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>X1  4.100<br>X2  0.755<br>X3  4.420<br>X4  5.610<br>Y  1.270<br>Y1  0.600<br>Y2  1.020<br>Y3  0.295<br>Y4  1.825<br>Y5  3.810<br>Y6  0.180<br>Y7  6.610<br>**----- End of picture text -----**<br>


7 of 8 **www.diodes.com** 

DMTH31M7LPSQ Document number: DS42061  Rev. 2 - 2 

June 2020 © Diodes Incorporated 

**DMTH31M7LPSQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMTH31M7LPSQ Document number: DS42061  Rev. 2 - 2 

June 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH31M7LPSQ-13/power-mosfet-n-channel-30-v-100-a-1300-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth31m7lpsq-13/mosfet-n-ch-30v-100a-powerdi5060/dp/3589214)
---

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