# Power MOSFET, N Channel, 30 V, 100 A, 1250 µohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:2709549/)

**URL**: https://novapart.co/products/DMTH3002LPS-13/power-mosfet-n-channel-30-v-100-a-1250-ohm-powerdi
**SKU**: DMTH3002LPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3580
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 1250µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709549/)

**Green** @ 

**Green DMTH3002LPS** @ ~~-~~ **30V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI** 

## **Product Summary** 

|~~SO~~|~~SO~~|~~SO~~|
|---|---|---|
|~~SO~~|||
|BVDSS|**RDS(ON)**|**ID **<br>**TC = +25°C**|
|30V|1.6mΩ @ VGS= 10V|240A|



## **Features** 

- Thermally Efficient Package – Cooler Running Applications 

- <1.1mm Package Profile – Ideal for Thin Applications 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On-State Losses 

## **Description** 

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in power management and load switch. 

- Low Input Capacitance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Applications** 

- DC-DC Converters 

- Load Switch 

## **Mechanical Data** 

- Case: PowerDI5060-8 (Type K) 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

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D<br>PowerDI5060-8 (Type K)  S D<br>S D<br>G S D<br>G D<br>Pin1  S<br>Top View  Bottom View  Internal Schematic  Top View<br>Pin Configuration<br> Information (Note 4)<br>Part Number Case Packaging<br>DMTH3002LPS-13  PowerDI5060-8 (Type K) 2,500/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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PowerDI5060-8 (Type K)<br>D D D D<br>       = Manufacturer’s Marking<br>H3002LS = Product Type Marking Code<br>YYWW = Date Code Marking<br>; am" )<br>YY = Last Two Digits of Year (ex: 17 = 2017)<br>WW = Week Code (01 to 53)<br>H3002LS<br>YY WW<br>S S S G<br>**----- End of picture text -----**<br>


_PowerDI is a registered trademark of Diodes Incorporated._ 

1 of 7 **www.diodes.com** 

DMTH3002LPS Document number: DS38282  Rev. 4 - 2 

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**DMTH3002LPS** 

## **Maximum Ratings** (@TC = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±16|V|
|Continuous Drain Current, VGS= 10V (Note 7)|Steady<br>State|TC= +25°C<br>TC= +100°C|ID|240<br>240|A|
|Maximum Continuous BodyDiode Forward Current(Note 7)|||IS|100|A|
|Pulsed Drain Current(380μs Pulse,DutyCycle = 1%)|||IDM|400|A|
|Pulsed Continuous BodyDiode Forward Current(380μs Pulse,DutyCycle = 1%)|||ISM|400|A|
|Avalanche Current,L=3mH(Note 8)|||IAS|15|A|
|Avalanche Energy,L=3mH(Note 8)|||EAS|700|mJ|



## **Thermal Characteristics** (@TC = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|1.2|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|103|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|2.5|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|51|°C/W|
|Total Power Dissipation(Note 7)|TC= +25°C|PD|136|W|
|Thermal Resistance,Junction to Case(Note 7)||RθJC|1.1|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@TC = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 9)|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|μA|VDS= 24V,VGS= 0V|
|Gate-Source Leakage<br>~~EE~~|IGSS<br>~~EE~~|—<br>~~EE~~|—<br>~~EE~~|±100<br>~~EE~~|nA<br>~~EE~~|VGS= ±16V,VDS= 0V<br>~~EE~~|
|**ON CHARACTERISTICS**(Note 9)<br>~~EE~~|||||||
|Gate Threshold Voltage<br>~~EE~~|VGS(TH)<br>~~EE~~|1<br>~~EE~~|—<br>~~EE~~|2<br>~~EE~~|V<br>~~EE~~|VDS= VGS,ID= 1mA<br>~~EE~~|
|Static Drain-Source On-Resistance<br>~~EE~~|RDS(ON)<br>~~EE~~|—<br>~~EE~~|1.25<br>~~EE~~|1.6<br>~~EE~~|mΩ<br>~~EE~~|VGS= 10V,ID= 25A<br>~~EE~~|
|||—<br>~~EE~~|2<br>~~EE~~|2.5<br>~~EE~~||VGS= 4.5V,ID= 25A<br>~~EE~~|
|Diode Forward Voltage<br>~~EE~~|VSD<br>~~EE~~|—<br>~~EE~~|0.8<br>~~EE~~|1.1<br>~~EE~~|V<br>~~EE~~|VGS= 0V,IS= 25A<br>~~EE~~|
|**DYNAMIC CHARACTERISTICS**(Note 10)<br>~~———ee~~|||||||
|Input Capacitance<br>~~———~~|CISS<br>~~ee~~|—<br>~~ee~~|5,000<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= 15V, VGS= 0V,<br>f = 1MHz|
|Output Capacitance<br>~~———~~|COSS<br>~~ee~~|—<br>~~ee~~|2,660<br>~~ee~~|—<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~———~~|CRSS<br>~~ee~~|—<br>~~ee~~|300<br>~~ee~~|—<br>~~ee~~|||
|Gate Resistance<br>~~———~~<br>~~—<———~~|RG<br>~~ee~~|—<br>~~ee~~|0.75<br>~~ee~~|—<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~——— ~~<br>~~—<———~~|QG<br> ~~ee~~|—<br>~~ee~~|37<br>~~ee~~|—<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~<br>~~eee~~|VDS= 15V, ID= 25A<br>~~ee~~<br>~~eee~~|
|Total Gate Charge(VGS= 10V)<br>~~—<———~~|QG|—|77|—<br>~~e~~|||
|Gate-Source Charge<br>~~—<———~~|QGS|—|10|—<br>~~e~~|||
|Gate-Drain Charge<br>~~—<———~~<br>~~—_———~~|QGD|—|14<br>~~eee~~|—<br>~~e~~<br>~~eee~~|||
|Turn-On DelayTime<br>~~—<———~~<br>~~—_———~~|tD(ON)|—|21<br>~~eee~~|—<br>~~e~~<br>~~eee~~|ns<br>~~e~~<br>~~eee~~<br>~~ee~~|VDD= 15V, VGS= 4.5V,<br>ID= 25A, RG= 4.7Ω<br>~~ee~~<br>~~eee~~|
|Turn-On Rise Time<br>~~—_———~~|tR|—|45<br>~~eee~~|—<br>~~eee~~|||
|Turn-Off DelayTime<br>~~—_———~~|tD(OFF)|—|32<br>~~eee~~|—<br>~~eee~~|||
|Turn-Off Fall Time<br>~~—_———~~|tF|—<br>~~ee~~|26<br>~~eee~~<br>~~ee~~|—<br>~~eee~~<br>~~ee~~|||
|BodyDiode Reverse RecoveryTime<br>~~—_———~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|44<br>~~eee~~<br>~~ee~~<br>~~ee~~|—<br>~~eee~~<br>~~ee~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~<br>~~ee~~|IS= 15A, di/dt = 100A/μs<br>~~eee~~<br>~~ee~~|
|BodyDiode Reverse RecoveryCharge<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|52<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 

7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

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**DMTH3002LPS** 

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100.0   30<br> VGS = 10.0V  VDS = 5.0V<br>80.0   |  VGS = 4.5V  25  eee ee<br> VGS = 4.0V<br> VGS = 3.5V  20<br>60.0   Oe ee |<br> VGS = 3.0V<br>15<br>40.0   125 ℃<br>10<br>150 ℃<br>85 ℃<br>20.0   V ao an  VGS = 2.5V  5  o 175 ℃ a s 25 ℃<br>-55 ℃<br> VGS = 2.2V<br>WF<br>0.0   po 0  |<br>0  0.5  1  1.5  2  2.5  3  1  1.5  2  2.5  3<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>4.00   10<br>8<br>3.00<br>6<br> VGS = 4.5V<br>2.00<br>4<br>ID = 25A<br>1.00    VGS = 10V  2<br>0.00   0<br>0  20  40  60  80  100  0  4  8  12  16  20<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.003  1.8<br>VGS = 10V  175 ℃<br> VGS = 10V, ID = 25A<br>0.0025  Se 1.6  t<br>150 ℃<br>0.002  125 ℃ 1.4<br>Se e Py<br>85 ℃<br>0.0015  1.2<br>ree r LLL<br> VGS = 4.5V, ID = 25A<br>25 ℃<br>0.001  1<br>-55 ℃<br>0.0005  S e t 0.8  h<br>0  e e 0.6<br>0  5  10  15  20  25  30  -50  -25  0  25  50  75  100 125 150 175<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (mΩ)  , DRAIN-SOURCE ON-RESISTANCE (mΩ)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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**DMTH3002LPS** 

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0.0035 0.004  Pt ft | ft tt<br>0.003   VGS = 4.5V, ID = 25A<br>0.0025  ee<br>ae<br>0.002<br>pe er<br>0.0015<br>a e aa<br> VGS = 10V, ID = 25A<br>0.001<br>e ee<br>0.0005  mT fF | | te tf<br>0  | | | | | cE ce tt<br>-50  -25  0  25  50  75  100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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2<br>1.8  TT TTT LL<br>1.6  ID = 1mA<br>1.4<br>BE<br>1.2  R S E<br>ID = 250μA<br>1  OS<br>0.8  FERC NSN<br>0.6 0.4  eePy] TE eS<br>0.2  PT tT EEE dTrErLTLIN  TE]<br>-50  -25  0  25  50  75  100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 8. Gate Threshold Variation vs.<br>JunctionTemperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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30  10000<br>f=1MHz<br>VGS = 0V<br>25  T E S SS<br>eee Ciss<br>20  — ——<br>Coss<br>15  UE 1000<br>TA = 85 [o] C<br>10  TA = 125 [o] C  W t KR<br>TE] f be ee<br>TA = 150 [o] C  TA = 25 [o] C<br>5  TA = 175 [o] C  TA = -55 [o] C  Crss<br>af} |<br>0  LIT 100   | | |<br>0  0.2  0.4  0.6  0.8  1  1.2  0  5  10  15  20  25  30<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10  1000<br>RDS(on)<br>Limited<br>8  100<br>PW = 1s<br>6  PW = 100ms<br>10<br>PW = 10ms<br>PW = 1ms<br>4  1 NN PW = 100µs |<br>PW = 100µs<br>VDS = 15V, ID = 25A  TJ(m ax) = 175°C ee<br>2  0.1 TC = 25°C<br>VGS = 10V<br>Single Pulse<br>0  DUT on 1  *  MRP Board<br>0  20  40  60  80  0.01 aee<br>0.1 1 10 100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMTH3002LPS Document number: DS38282  Rev. 4 - 2 

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**DMTH3002LPS** CCS 

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LESih con PD OKRA T<br>**----- End of picture text -----**<br>


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1  _——— <1<br>SSoe<br>D=0.7  rT TIT et<br>b e eT<br>E D=0.5  H err meNH HHO<br>D=0.3  ToT eee D=0.9  CT<br>Fri eA CUTIE TAT FTTH<br>0.1  ST eZ TL UU<br>P D=0.1  a aa A a ee<br>etter<br>COTM ATIC<br>D=0.05<br>Fy | | AMT | TT<br>nA77 A<br>D=0.02<br>ING ATI OMMURLT OETA ATIOUGRAT MM OGLTIOMI<br>0.01  R e ee ee ee<br>PR D=0.01<br>P E<br>er | TA OT UP TT<br>D=0.005<br>FCAT TTI IE RθJC(t) = r(t) * RθJC<br>(OT TE tt LTT<br>RθJC = 1.1 ℃ /W<br>D=Single Pulse  Duty Cycle, D = t1 / t2<br>0.001<br>1E-06  1E-05  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMTH3002LPS Document number: DS38282  Rev. 4 - 2 

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**DMTH3002LPS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI5060-8 (Type K)** 

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D<br>D1 PowerDI5060-8<br>0 (4x) (Type K)<br>Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>x c A1 A1  0 0.05 0.02<br>b  0.33 0.51  0.41<br>E1 E<br>b1  0.300 0.366 0.333<br>y Seating Plane b2  0.20 0.35 0.25<br>e c 0.23 0.33 0.277<br>C D  5.15 BSC<br>D1  4.85 4.95 4.90<br>1 0 1(4x) D2  -  -  3.98<br>Ø1.000 Depth 0.07±0.030 E  6.15 BSC<br>E1  5.75 5.85 5.80<br>b1(8x) DETAIL A<br>E2  3.56 3.725 3.66<br>b(8x) e/2<br>E  1.27BSC<br>1 k  -  -  1.27<br>L L  0.51  0.71  0.61<br>D2 La  0.51  0.675 0.61<br>k b2(2x) L1  0.05 0.20 0.175<br>L4  -  -  0.125<br>M  3.50 3.71  3.605<br>a L4 ee<br>E2 A x  -  -  1.400<br>M y -  -  1.900<br>θ  10°  12°  11°<br>DETAIL A ee θ1  6°  8°  7°<br>All Dimensions in mm<br>La L1<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>PowerDI5060-8 (Type K)<br>X2<br>Value<br>Dimensions<br>Y1 (in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>Y2 X  0.610<br>Y3 X1  3.910<br>X2  4.420<br>Y  1.270<br>G1 X1 Y1  1.020<br>Y2  3.810<br>te Y3 6.610<br>Y C X (8x)<br>ae G —<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ested Pad Layout yout out** 

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DMTH3002LPS Document number: DS38282  Rev. 4 - 2 

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**DMTH3002LPS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMTH3002LPS Document number: DS38282  Rev. 4 - 2 

May 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH3002LPS-13/power-mosfet-n-channel-30-v-100-a-1250-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth3002lps-13/mosfet-aec-q101-nch-30v-powerdi/dp/2709549)
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