# Power MOSFET, N Channel, 100 V, 248 A, 1680 µohm, PowerDI 1012, Surface Mount

![Product image](https://novapart.co/image/farnell:3589209RL/)

**URL**: https://novapart.co/products/DMTH10H2M5STLW-13/power-mosfet-n-channel-100-v-248-a-1680-ohm
**SKU**: DMTH10H2M5STLW-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.0900
**Stock**: 200+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 5.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 1012 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 248A |
| Drain Source On State Resistance | 1680µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3589209RL/)

~~Po,~~ **Green** 

**DMTH10H2M5STLW** CS*Sd 

**100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI1012-8** 

## **Product Summary** 

|~~——~~|~~——~~|~~——~~|
|---|---|---|
|**BVDSS**|**RDS(ON) Max**|**ID **<br>**TC = +25°C**|
|100V|2.5mΩ @ VGS= 10V|248A|



## **Features** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On State Losses 

- Wettable Flank for Improved Optical Inspection 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

   - **https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch. 

## **Mechanical Data** 

   - Case: POWERDI[®] 1012-8 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminal Connections Indicator: See Diagram 

- Motor Control 

- DC-DC Converters 

- Power Management 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.388 grams (Approximate) 

POWERDI1012-8 

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D G D<br>S<br>S<br>S D<br>G S<br>S<br>S<br>eos Pin1  & S S D<br>Top View<br>Top View  Bottom View  Internal Schematic  Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMTH10H2M5STLW-13|POWERDI1012-8|1500/Tape &Reel|



Notes: 

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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D D D<br>TH10H2M5STL<br>G S S S S S S S<br>WW<br>YY<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking TH10H2M5STL = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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DMTH10H2M5STLW Document number: DS42469 Rev. 2 - 2 

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**DMTH10H2M5STLW** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|100|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|TC= +25°C<br>TC= +100°C|ID|248<br>175|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)||IDM|992|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)||IS|248|A|
|Pulsed BodyDiode Forward Current(10µs Pulse,DutyCycle = 1%)||ISM|992|A|
|Avalanche Current,L = 0.3mH||IAS|68|A|
|Avalanche Energy,L = 0.3mH||EAS|701|mJ|



## **Thermal Characteristics** 

|**Characteristic**|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|---|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|5.8|W|
|Thermal Resistance,Junction to Ambient(Note 5)||RθJA|26|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|230.8|W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|0.65|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 7)<br>~~——~~|||||||
|Drain-Source Breakdown Voltage<br>~~——~~|BVDSS|100|—|—|V|VGS= 0V,ID= 1mA|
|Zero Gate Voltage Drain Current<br>~~——~~|IDSS|—|—|1|µA|VDS= 80V,VGS= 0V|
|Gate-Source Leakage<br>~~——~~|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS** (Note 7)<br>~~——~~<br>~~———~~|||||||
|Gate Threshold Voltage<br>~~———~~|VGS(TH)<br>|2<br>|—<br>|4<br>|V<br>|VDS= VGS,ID= 250μA<br>|
|Static Drain-Source On-Resistance<br>~~———~~|RDS(ON)<br>|—<br>|1.68<br>|2.5<br>|mΩ<br>|VGS= 10V,ID= 30A<br>|
|Diode Forward Voltage<br>~~———~~|VSD<br>|—<br>|0.8<br>|1.2<br>|V<br>|VGS= 0V,IS= 30A<br>|
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~———~~<br>~~ee~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|8450<br>~~———~~<br>~~ee~~|—<br>~~———~~|pF<br>~~———~~|VDS= 50V, VGS= 0V<br>f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|2430<br>~~———~~<br>~~ee~~|—<br>~~———~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|17.7<br>~~———~~<br>~~ee~~|—<br>~~———~~|||
|Gate Resistance<br>~~———~~|RG<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|1.0<br>~~———~~<br>~~ee~~|—<br>~~———~~|Ω<br>~~———~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~|
|Total Gate Charge|QG<br>~~ee~~|—<br>~~ee~~|124.4<br>~~ee~~|—|nC|VDD= 50V, ID= 30A,<br>VGS= 10V|
|Gate-Source Charge|QGS|—|34|—|||
|Gate-Drain Charge|QGD|—|28.3|—|||
|Turn-On DelayTime|tD(ON)|—|32.7|—|ns|VDD= 50V, VGS= 10V,<br>ID= 30A, RG= 4.7Ω|
|Turn-On Rise Time|tR|—|47|—|||
|Turn-Off DelayTime|tD(OFF)|—|91.3|—|||
|Turn-Off Fall Time|tF|—|53.9|—|||
|Reverse RecoveryTime|tRR|—|87.6|—|ns|IF= 25A, di/dt = 100A/µs|
|Reverse RecoveryCharge|QRR|—|251.8|—|nC||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

   6. Thermal resistance from junction to soldering point (on the exposed drain pad). 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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100.0<br>VGS = 5.5V<br>90.0<br>2 VGS = 5.0V<br>80.0 i ee<br>70.0 VGS = 6.0V<br>60.0 VGS = 10V<br>VGS = 4.7V<br>50.0 © a<br>40.0<br>f[ VGS = 4.5V<br>30.0<br>20.0<br>VGS = 4.0V VGS = 4.2V<br>10.0 i<br>0.0 _———a<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>2.0<br>1.9 “TEL ELILE,<br>1.8 TTT Ee<br>VGS = 10V<br>1.7<br>CE<br>1.6 es ee e e<br>1.5 TTT Ee<br>1.4 TTT Ee<br>1.3<br>1.2 FEEFEE<br>10 30 50 70 90 110 130 150<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current<br>and Gate Voltage<br>5<br>VGS = 10V<br>4.5 ee ee<br>4<br>175℃<br>3.5 SEE<br>150℃<br>3<br>e T<br>2.5 125℃<br>———<br>2 85℃<br>1.5 a S<br>25℃<br>1 Se e<br>-55℃<br>0.5 iF | | | ||<br>0 PF | | | ft fy<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (mΩ)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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30<br>VDS = 5.0V<br>25 eee |i<br>20<br>15 SoeeeeeTE|e<br>10 WA<br>175℃ 85℃<br>150℃ 25℃<br>5<br>—CO@F 125℃ -55℃<br>0 BD)<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>10<br>8<br>6<br>4<br>2<br>ID = 30A<br>0<br>0 4 8 12 16 20<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.6<br>2.4 PT TTT TTT yo<br>2.2<br>2 SEE EES<br>1.8<br>1.6 SEE ERS<br>1.4 a<br>1.2<br>1 e e VGS = 10V, ID = 30A<br>0.80.60.4 fF SemT | | |So[| | cE | dT |tft Te<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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## DIODES, 

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4.0<br>3.5 PL tte LE LL<br>3.0<br>SERRE<br>2.5 P|]<br>EL Ae<br>2.0 PE a<br>1.5<br>Peet | | |<br>VGS = 10V, ID = 30A<br>1.0<br>0.5 e ee<br>0.0 Pt ttt L] ty<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Temperature<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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4<br>3.5 PLEEE<br>3<br>EL EL<br>ID = 1mA<br>2.5 B e<br>S C<br>2 OS<br>ID = 250μA<br>1.5<br>oS :<br>1<br>0.5 Ec e S<br>0 Pit EEL] TL<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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30 100000<br>f = 1MHz<br>VGS = 0V<br>25 eee | = == Ciss<br>10000<br>a es<br>20<br>1000 Coss<br>15<br>100<br>10 TA = 175 [o] C WL | a e s<br>5 TA = 150 [o] C TA = 85 [o] C 10 Crss<br>TA = 125 [o] C TA = 25 [o] C<br>TA = -55 [o] C<br>0 Dl) | eo 1 Saa ===qp ss=== =aaae<br>0 0.3 0.6 0.9 1.2 0 10 20 30 40 50 60 70 80 90 100<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 10000<br>R<br>DS(ON)<br>Limited<br>1000<br>8<br>100<br>6 PW = 1µsW = 1µs = 1µs<br>10 PW = 10µsW = 10µs = 10µs<br>PW = 100µsW = 100µs = 100µs<br>4<br>VDS = 50V, ID = 30A 1 TTJ(Max)C = 25 = 175℃TJ(Max)C = 25 = 175℃J(Max)C = 25 = 175℃C = 25 = 175℃ = 25 = 175℃ = 175℃℃ ℃ PW = 1msW = 1ms = 1ms<br>2 Single Pulse PW = 10msW = 10ms = 10ms<br>0.1<br>DUT on Infinite<br>PW = 100msW = 100ms = 100ms<br>Heatsink<br>VGS = 10VGS = 10V = 10V DC<br>0 0.01<br>0 30 60 90 120 150 0.1 1 10 100 1000<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


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10000<br>R<br>DS(ON)<br>Limited<br>1000<br>100<br>PW = 1µsW = 1µs = 1µs<br>10 PW = 10µsW = 10µs = 10µs<br>PW = 100µsW = 100µs = 100µs<br>1 ℃<br>TTJ(Max)C = 25 = 175℃TJ(Max)C = 25 = 175℃J(Max)C = 25 = 175℃C = 25 = 175℃ = 25 = 175℃ = 175℃℃ PW = 1msW = 1ms = 1ms<br>Single Pulse PW = 10msW = 10ms = 10ms<br>0.1<br>DUT on Infinite<br>PW = 100msW = 100ms = 100ms<br>Heatsink<br>VGS = 10VGS = 10V = 10V DC<br>0.01<br>0.1 1 10 100 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


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1 a cc A8<br>SS a ena to<br>Toe TT CC<br>ee en A D=0.9<br>D=0.5<br>Ee ail pau TTT TTT<br>D=0.7<br>D=0.3 TMs THT TH TTT TTT<br>ET I SUTIN TAM ETM TAMMIE TTT<br>0.1 D=0.1 oth T 8aa”a A2 0DeATL N 0DeLEMEOeAELOOETT ET<br>aibe ie ditimsesstiiimemstieestiiiieetmscal ets eesti sail eee<br>err NA ii oT Ti TTT TETTT<br>aN | I TTT TTT PPTTTP<br>oP SAN |<br>D=0.05<br>Bes SnTTT<br>D=0.02<br>el PUTAMEN TTI LTTE ETE TTI ETT TTT ETT<br>D=0.01<br>0.01 Hg |<br>FO<br>7 |f | III D=0.005 fy TTT TTTTT<br>| Al a a<br>(JN ee<br>D=Single Pulse il<br>AC RθJC(t) = r(t) * R ee θJC ell<br>RθJC = 0.65℃/W<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **POWERDI1012-8** 

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E<br>L1 E2 POWERDI1012-8<br>E1 c E3 E4 Dim  Min  Max  Typ<br>A  2.20 2.40 2.30<br>b 0.70 0.90 0.80<br>b1  0.42  0.50 0.45<br>D2 c  0.40 0.60 0.50<br>D  11.48 11.88 11.68<br>k1<br>D D1 D1  10.23 10.53 10.38<br>D2  6.45 6.85 6.65<br>E  9.70 10.10 9.90<br>k E1  9.70 9.90 9.80<br>L<br>E2  7.00 8.00 7.50<br>E3  1.10 1.30 1.20<br>E4  3.00 3.20 3.10<br>e  1.20 BSC<br>e i b : L3 b1 L2 ———— k  4.39 REF<br>k1  3.30 REF<br>L  0.50 0.70 0.60<br>L1  0.50 0.90 0.70<br>A<br>L2  1.40 1.80 1.60<br>L3  1.00 1.30 1.15<br>θ  0º  15º  10º<br>θ1  0º  10º  5º<br>All Dimensions in mm<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>POWERDI1012-8<br>Y2<br>Tr X3 t—~—C—tSCSST<br>Value<br>Dimensions<br>(in mm)<br>C  1.200<br>G  0.400<br>Y3<br>G1  2.500<br>X  0.800<br>X1  9.200<br>Y4 X2  9.700<br>Y5<br>X3  10.100<br>Y  2.800<br>G1 X2 Y1  0.800<br>C<br>Y2  1.400<br>Y1 Y3  2.900<br>Y Y4  3.700<br>Y5  13.300<br>Gjma<br>G X<br>Pht X1<br>0<br>0<br>01<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

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## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMTH10H2M5STLW Document number: DS42469 Rev. 2 - 2 

June 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH10H2M5STLW-13/power-mosfet-n-channel-100-v-248-a-1680-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth10h2m5stlw-13/mosfet-n-ch-100v-248a-powerdi1012/dp/3589209RL)
---

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