# Power MOSFET, N Channel, 100 V, 44 A, 0.011 ohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:2709545RL/)

**URL**: https://novapart.co/products/DMTH10H015LPS-13/power-mosfet-n-channel-100-v-44-a-0011-ohm-powerdi
**SKU**: DMTH10H015LPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5040
**Stock**: 50+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 44A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709545RL/)

**Green DMTH10H015LPS 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Features** ~~——_—s~~ 

## **Product Summary** ~~—~~ 

|**100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET**<br>**Product Summaryy**<br>**Green**<br>~~—~~|**100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET**<br>**Product Summaryy**<br>**Green**<br>~~—~~|**100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET**<br>**Product Summaryy**<br>**Green**<br>~~—~~|
|---|---|---|
|~~—~~|||
|**BVDSS**<br>~~—~~|**RDS(ON) Max**<br>~~—~~|**ID **<br>**TC = +25°C**|
|100V|16mΩ @ VGS= 10V|44A|
||18mΩ @ VGS= 6V|41A|



- **Features** • Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On-State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen- and Antimony-Free. “Green” Device (Note 3)** 

## **Description** 

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch. 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

   - **https://www.diodes.com/products/automotive/automotiveproducts/.** 

- **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- Motor Control 

- DC-DC Converters 

- Power Management 

## **Mechanical Data** 

- Case: PowerDI[®] 5060-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Lead-Frame. Solderable per MIL-STD-202, Method 208 

• 

- Weight: 0.097 grams (Approximate) 

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Site 1:<br>PowerDI5060-8  D<br>S D<br>Pin1<br>S D<br>G S D<br>G D<br>eo7 © S |<br>Top View<br>Top View  Bottom View  Internal Schematic  Pin Configuration<br>Site 2:<br>PowerDI5060-8 (SWP) (Type UX) D<br>S D<br>Pin1  S D<br>G S D<br>G D<br>ee © |<br>S<br>Top View  Bottom View  Internal Schematic  Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


_PowerDI is a registered trademark of Diodes Incorporated._ 

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DMTH10H015LPS Document number: DS38713  Rev. 3 - 2 

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**DMTH10H015LPS** 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMTH10H015LPS-13|PowerDI5060-8|2,500/Tape & Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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D D D D<br>TH1015LS<br>YY WW<br>-<br>S S S G<br>**----- End of picture text -----**<br>


- = Manufacturer’s Marking TH1015LS = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 20 = 2020) WW = Week Code (01 to 53) . 

**Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|100|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|11<br>8|A|
||Steady<br>State|TC= +25°C<br>TC= +100°C|ID|44<br>28|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|120|A|
|Maximum Continuous BodyDiode Forward Current(Note 5)|||IS|1.5|A|
|Avalanche Current(Note 7)L=3mH|||IAS|7.5|A|
|Avalanche Energy (Note 7)L=3mH|||EAS|85|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|2.8|W|
|Thermal Resistance,Junction to Ambient(Note 5)||RθJA|52|°C/W|
|Total Power Dissipation|TC= +25°C|PD|46|W|
|Thermal Resistance,Junction to Case||RθJC|2.7|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



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**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~GO~~|**Symbol**<br>~~GO~~|**Min**<br>~~GO~~|**Typ**<br>~~GO~~|**Max**<br>~~GO~~<br>~~GO~~|**Unit**<br>~~GO~~<br>~~GO~~|**Test Condition**<br>~~GO~~|
|**OFF CHARACTERISTICS**(Note 6)<br>~~GO~~<br>~~OO~~|||||||
|Drain-Source Breakdown Voltage<br>~~OO~~|BVDSS<br>~~OO~~|100<br>~~OO~~|—<br>~~OO~~|—<br>~~OO~~|V<br>~~OO~~|VGS= 0V,ID= 1mA<br>~~OO~~|
|Zero Gate Voltage Drain Current<br>~~OO~~|IDSS<br>~~OO~~|—<br>~~OO~~|—<br>~~OO~~|1<br>~~OO~~|µA<br>~~OO~~|VDS= 80V,VGS= 0V<br>~~OO~~|
|Gate-Source Leakage<br>~~pf~~|IGSS<br>~~pf~~|—<br>~~pf~~|—<br>~~pf~~|±100<br>~~pf~~|nA<br>~~pf~~|VGS=±20V,VDS= 0V<br>~~pf~~|
|**ON CHARACTERISTICS** (Note 6)|||||||
|Gate Threshold Voltage|VGS(TH)|1.4|2|3|V|VDS= VGS,ID= 250µA|
|Static Drain-Source On-Resistance<br>~~rr~~|RDS(ON)<br>~~rr~~|—<br>~~rr~~|11<br>~~rr~~|16<br>~~rr~~|mΩ<br>~~rr~~|VGS= 10V,ID= 20A<br>~~rr~~|
|||—<br>~~rr~~|13.5<br>~~rr~~|18<br>~~rr~~||VGS= 6V,ID= 20A<br>~~rr~~|
|||—<br>~~rr~~|18.4<br>~~rr~~|25<br>~~rr~~||VGS= 4.5V,ID= 5A<br>~~rr~~|
|Diode Forward Voltage<br>~~pf~~|VSD<br>~~pf~~|—<br>~~pf~~|0.9<br>~~pf~~|1.3<br>~~pf~~|V<br>~~pf~~|VGS= 0V,IS= 20A<br>~~pf~~|
|**DYNAMIC CHARACTERISTICS**(Note 7)<br>~~ee~~|||||||
|Input Capacitance<br>~~pO~~<br>~~ee~~|CISS|—|1,871|—|pF|VDS= 50V, VGS= 0V<br>f = 1MHz|
|Output Capacitance<br>~~ee~~|COSS|—|261|—|||
|Reverse Transfer Capacitance<br>~~ee~~|CRSS|—|7|—|||
|Gate Resistance<br>~~ee~~<br>~~i~~<br>~~———~~|RG<br>|—<br><br>~~Oe~~|0.75<br><br>~~Oe~~|—<br><br>~~Oe~~|Ω<br>|VDS= 0V,VGS= 0V,f = 1MHz<br>|
|Total Gate Charge<br>~~ee~~<br>~~iOe~~<br>~~———~~|QG<br>~~Oe~~|—<br>~~Oe~~<br>~~Oe~~|33.3<br>~~Oe~~<br>~~Oe~~|—<br>~~Oe~~<br>~~Oe~~|nC<br>~~Oe~~<br>~~ee~~|VDD= 50V, ID= 10A,<br>VGS= 10V<br>~~Oe~~<br>~~ee~~|
|Gate-Source Charge<br>~~Oe~~<br>~~———~~|QGS<br>~~Oe~~|—<br>~~Oe~~<br>~~Oe~~|6.9<br>~~Oe~~<br>~~Oe~~|—<br>~~Oe~~<br>~~Oe~~|||
|Gate-Drain Charge<br>~~Oe~~<br>~~———~~|QGD<br>~~Oe~~|—<br>~~Oe~~<br>~~Oe~~|5.1<br>~~Oe~~<br>~~Oe~~|—<br>~~Oe~~<br>~~Oe~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~Oe~~<br>~~———~~|tD(ON)<br>~~Oe~~|—<br>~~Oe~~<br>~~Oe~~|6.5<br>~~Oe~~<br>~~Oe~~|—<br>~~Oe~~<br>~~Oe~~<br>~~ee~~|ns<br>~~Oe~~<br>~~ee~~|VDD= 50V, VGS= 10V,<br>ID= 10A, RG= 6Ω<br>~~Oe~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~|tR|—<br>~~Oe~~|7<br>~~Oe~~|—<br>~~Oe~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~———~~|tD(OFF)|—<br>~~Oe~~|19.7<br>~~Oe~~|—<br>~~Oe~~<br>~~ee~~|||
|Turn-Off Fall Time<br>~~———~~|tF|—<br>~~Oe~~|8.1<br>~~Oe~~|—<br>~~Oe~~<br>~~ee~~|||
|Reverse RecoveryTime<br>~~———~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~Oe~~<br>~~ee~~|37.9<br>~~Oe~~<br>~~ee~~|—<br>~~Oe~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|IF= 10A, di/dt = 100A/µs<br>~~ee~~<br>~~ee~~|
|Reverse RecoveryCharge<br>~~———~~<br>~~ee~~|QRR<br>~~ee~~|—<br>~~Oe~~<br>~~ee~~|51.9<br>~~Oe~~<br>~~ee~~|—<br>~~Oe~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||



7. Guaranteed by design. Not subject to product testing. 

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30 30<br>VGS = 10V<br>VGS  = 6.0V VDS = 5.0V<br>RO<br>25 V GS  = 5.0V 25<br>VGS = 4.5V VGS = 4.0V<br>20 ff ooo 20 ee ie<br>TA = 175°C<br>15 15<br>TA = 150°C<br>TA = 25°C<br>10 ro 10 T A  = 125°C<br>VGS = 3.6V<br>TA  = 85°C TA = -55°C<br>50 Annee” 50 Zee<br>0 0.5 1 1.5 2 2.5 3 1.5 2 2.5 3 3.5 4 4.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>24 50 ttt<br>20 40<br>VGS = 4.5V<br>16 30 4 ID = 20A i<br>128 V GS  = 10V 2010 etONE4+4-|<br>4 0 |<br>0 5 10 15 20 25 30 0 4 ft 8 | 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>0.026 2.2<br>0.024 VGS = 10V T A  = 175°C 2 VGS  = 10V<br>0.022 TA = 150°C ID = 20A<br>aa 1.8 OTH<br>0.02 TA = 125°C<br>0.018 1.6 VGS = 6.0V<br>0.016 SESS TA = 85°C SS 1.4 SaaEnE I D 4p  = 20A<br>0.014 ee 1.2 eee cane<br>0.012 T A  = 25°C<br>1<br>0.01<br>0.008 SESS TA  = -55 ° C 0.8 et<br>0.006 0.6<br>0.004<br>oe 0 5 10 15 20 25 30 0.4 ee<br>Figure 5 Typical On-Resistance vs. ID, DRAIN CURRENT (A) -50 -25T , JUNCTION TEMPERATURE (J 0 25 50 75 100 125 °C)150 175<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D , DRAIN CURRENT (A)<br> I D<br> I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>, DRAIN-SOURCE ON-RESISTANCE ( R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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## rifLr. 

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0.03 3<br>2.8<br>0.025 TIT ]TIIL 2.6 TELL ELLL<br>2.4<br>0.02 TT TTT OeYZ 2.2 S ELLE ID = 1mA<br>LL PSS<br>2<br>VGS = 6.0V ID = 250µA<br>ran a ee<br>0.015 ID = 20A Le 1.8 TSS<br>1.6<br>0.01 oT 1.4 EET<br>Sa | | I TOPPERS<br>VGS  = 10V 1.2<br>0.005 PTT) I D = 20A 1 Sasa<br>= EEEEREEPR<br>0.8<br>0 TTT TTT Ty 0.6 e ee e<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>30 10000<br>f=1MHz<br>Ciss<br>25 eee |e Se<br>1000<br>Coss<br>20 ee =eeee<br>15 |e TA = 175 ° C 100 we<br>TA = 150°C Crss<br>10 TA  = 125 ° C HT1 fa TA = 25°C Seaoeee<br>TA = 85°C TA = -55°C 10<br>Mf | |<br>5<br>il | ——<br>0 ypBY) 1 fFFete<br>0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 50<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 1000<br>RDS(on)<br>Limited P W = 1µs<br>8 100<br>DC<br>PW = 100ms<br>6 10 PW = 10ms<br>lupe TRON<br>PW = 1ms<br>VDS = 50V PW = 100µs<br>4 ID = 10A 1 OI<br>a PW = 10µs SAUNT CUT<br>DEON T  = 175 ° C<br>J(m ax)<br>2 0.1 T C = 25°C 010<br>V  = 10V<br>GS<br>Single Pulse<br>0 0.01 DUT on 1 * MRP Board a|<br>0 5 10 15 20 25 30 35 0.1 1 10 100 1000<br>Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area<br>)Ω<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(th)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>CT<br>, DRAIN CURRENT (A)<br>ID<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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DMTH10H015LPS 

October 2020 

© Diodes Incorporated 

Document number: DS38713  Rev. 3 - 2 

**DMTH10H015LPS** | 

LJIVS,'nun ¢C OR PORATED DrDES 

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1<br>D = 0.9<br>D = 0.7<br>SP D = 0.5 csc stlL<br>a<br>D = 0.3 ee ee ee<br>PN PI | egEPP<br>Se<br>0.1 Fe D = 0.1 ft EErT er| Af | ee<br>EE<br>po D = 0.05 msee<br>a 7<br>PL AUT E<br>T/A D = 0.02<br>0.01 HEE D = 0.01 HEE EEE<br>re ee a ee<br>ee D = 0.005<br>TIC R θJC (t) = r(t) * R θJC HH<br>D = Single Pulse R θJC  = 1.5°C/W<br>Duty Cycle, D = t1/ t2<br>0.001 i PEP COEF i<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

Site 1: 

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PowerDI5060-8<br>PowerDI5060-8<br>D Dim  Min  Max  Typ<br>D1 Detail A A  0.90  1.10  1.00<br>0 ( 4X) A1  0.00  0.05  −<br>b  0.33  0.51  0.41<br>c b2  0.200 0.350 0.273<br>A1 b3  0.40 0.80 0.60<br>c  0.230  0.330  0.277<br>E1 E<br>D  5.15 BSC<br>e D1  4.70  5.10  4.90<br>D2  3.70  4.10  3.90<br>1 0 1 ( 4X) D3  3.90 4.30 4.10<br>lot |  eH ——— E  6.15 BSC<br>E1  5.60  6.00  5.80<br>b ( 8X) e/2 E2  3.28  3.68  3.48<br>1 E3  3.99  4.39  4.19<br>L b2 ( 4X) e  1.27 BSC<br>D3 K G  0.51  0.71  0.61<br>K  0.51 −  −<br>es A E3 E2 weer D2 cra M b3 ( n 4X) aes——— L1 L  0.100 0.51  0.200 0.71  0.175 0.61<br>M  3.235  4.035  3.635<br>Detail A M1 M1  1.00 1.40 1.21<br>Θ  10°  12°  11°<br>G L1 Θ1  6°  8°  7°<br>All Dimensions in mm<br>Site 2:<br>PowerDI5060-8 (SWP) (Type UX)<br>D<br>D1 PowerDI5060-8 (SWP)<br>OO (Type UX)<br>Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>A1  0 0.05 --<br>b  0.30  0.50  0.41<br>E1 E A1<br>1.900 tor 1.400 ) c Coa Seating Plane ————TEE b2 b4  0.20  0.25REF 0.35  0.25<br>c  0.230  0.330 0.277<br>e<br>D  5.15 BSC<br>D1  4.70 5.10 4.90<br>1 D2  3.56  3.96  3.76<br>D2a  3.78  4.18  3.98<br>Ø1.000 Depth 0.07±0.030<br>DETAIL A E  6.40 BSC<br>b( 8x) E1  5.60 6.00 5.80<br>e/2<br>1 E2  3.46 3.86 3.66<br>L E2a  4.195 4.595 4.395<br>e  1.27BSC<br>D2a k == k  1.05  --  --<br>L  0.635 0.835 0.735<br>La  0.635 0.835 0.735<br>fats A ==== L1  0.200 0.400 0.300<br>L4<br>E2 D2 L1a  0.050REF<br>M L4  0.025 0.225 0.125<br>DETAIL A M  3.205 4.005 3.605<br>θ  10°  12°  11°<br>La<br>θ1  6°  8°  7°<br>erat b4( 8x) ! L1 ———— All Dimensions in mm<br>0( 4x)<br>4x)<br>01(<br>**----- End of picture text -----**<br>


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**DMTH10H015LPS** 

## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

Site 1: 

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PowerDI5060-8<br>X4<br>Y2<br>X3<br>Y3 Y1<br>uu<br>X2<br>Y5<br>Y4 X1<br>Y7<br>C G1<br>Y6 Wh it<br>Y( 4x)<br>00 X 0: G<br>**----- End of picture text -----**<br>


**==> picture [115 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions  Value (in mm)<br>C  1.270<br>G  0.660<br>G1  0.820<br>X  0.610<br>X1  4.100<br>X2  0.755<br>X3  4.420<br>X4  5.610<br>Y  1.270<br>Y1  0.600<br>Y2  1.020<br>Y3  0.295<br>Y4  1.825<br>Y5  3.810<br>Y6  0.180<br>Y7  6.610<br>**----- End of picture text -----**<br>


Site 2: 

**PowerDI5060-8 (SWP) (Type UX)** 

**==> picture [368 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
ro X2<br>Y1 Value<br>Dimensions<br>(in mm)<br>ae — C  1.270<br>G  0.660<br>Y2<br>G1  0.820<br>Y3 X  0.610<br>X1  4.100<br>X2  4.420<br>G1 X1 Y  1.270<br>Y1  1.020<br>nl | a Y2  3.810<br>Y3  6.610<br>Y C X ( 8x)<br>G<br>**----- End of picture text -----**<br>


8 of 9 **www.diodes.com** 

DMTH10H015LPS Document number: DS38713  Rev. 3 - 2 

October 2020 © Diodes Incorporated 

**DMTH10H015LPS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

9 of 9 **www.diodes.com** 

DMTH10H015LPS Document number: DS38713  Rev. 3 - 2 

October 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH10H015LPS-13/power-mosfet-n-channel-100-v-44-a-0011-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth10h015lps-13/mosfet-auto-n-ch-100v-powerdi5060/dp/2709545RL)
---

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