# Power MOSFET, N Channel, 100 V, 100 A, 7400 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:3943892/)

**URL**: https://novapart.co/products/DMTH10H010SCT/power-mosfet-n-channel-100-v-a-7400-ohm-to-220ab
**SKU**: DMTH10H010SCT
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5680
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 187W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 7400µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943892/)

> **Green DMTH10H010SCT** ~~®~~ [7 

## **100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**<br>**RDS(ON)**<br>**Package**<br>**ID **<br>**TC = +25°C**<br>100V<br>9.5mΩ@VGS= 10V<br>TO220AB<br>100A<br>~~s~~|**BVDSS**<br>**RDS(ON)**<br>**Package**<br>**ID **<br>**TC = +25°C**<br>100V<br>9.5mΩ@VGS= 10V<br>TO220AB<br>100A<br>~~s~~|**BVDSS**<br>**RDS(ON)**<br>**Package**<br>**ID **<br>**TC = +25°C**<br>100V<br>9.5mΩ@VGS= 10V<br>TO220AB<br>100A<br>~~s~~|**BVDSS**<br>**RDS(ON)**<br>**Package**<br>**ID **<br>**TC = +25°C**<br>100V<br>9.5mΩ@VGS= 10V<br>TO220AB<br>100A<br>~~s~~|
|---|---|---|---|
|**BVDSS**|**RDS(ON)**|**Package**|**ID **<br>**TC = +25°C**|
|100V|9.5mΩ@VGS= 10V|TO220AB|100A|



## **Features** 

- Low Input Capacitance 

- High BVDSS Rating for Power Application 

- Low Input/Output Leakage 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

## **Applications** 

- Motor Control 

- Backlighting 

- DC-DC Converters 

- Power Management Functions 

- Case: TO220AB 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Terminal Connections: See Diagram Below 

- Weight: 1.85 grams (Approximate) 

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TO220AB<br>**----- End of picture text -----**<br>


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Top View  Bottom View<br>**----- End of picture text -----**<br>


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Top View<br>Equivalent Circuit  Pin Out Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information **(Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging **|
|DMTH10H010SCT|TO220AB|50Pieces/Tube|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine 1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

= Manufacturer’s Marking H10H010S = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 18 = 2018) WW or ~~a~~ WW = Week Code (01 to 53) 

**H10H010S YYWW** 

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DMTH10H010SCT Document number: DS39681  Rev. 3 - 2 

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**DMTH10H010SCT** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|100|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current|TC= +25°C<br>TC= +100°C|ID|100<br>80|A|
|Maximum Continuous BodyDiode Forward Current|TC= +25°C|IS|90|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)||IDM|400|A|
|Pulsed BodyDiode Forward Current(10s Pulse,DutyCycle = 1%)||ISM|400|A|
|Avalanche Current,L = 0.3mH(Note 7)||IAS|33.7|A|
|Avalanche Energy,L = 0.3mH(Note 7)||EAS|170|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|2.5|W|
|Thermal Resistance,Junction to Ambient(Note 5)||RθJA|60|°C/W|
|Total Power Dissipation|TC= +25°C|PD|187|W|
|Thermal Resistance,Junction to Case||RθJC|0.8|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~———~~|**Symbol**<br>~~———~~|**Min**<br>~~———~~|**Typ**<br>~~———~~|**Max**<br>~~———~~|**Unit**<br>~~———~~|**Test Condition**<br>~~———~~|
|**OFF CHARACTERISTICS**(Note 6)<br>~~———~~|||||||
|Drain-Source Breakdown Voltage<br>~~———~~|BVDSS<br>~~———~~|100<br>~~———~~|—<br>~~———~~|—<br>~~———~~|V<br>~~———~~|VGS= 0V,ID= 1mA<br>~~———~~|
|Zero Gate Voltage Drain Current<br>~~———~~<br>~~Pf~~|IDSS<br>~~———~~<br>~~Pf~~|—<br>~~———~~<br>~~ef~~|—<br>~~———~~<br>~~ef~~|1<br>~~———~~<br>~~ef~~|µA<br>~~———~~<br>~~ef~~|VDS= 80V,VGS= 0V<br>~~———~~|
|Gate-Source Leakage<br>~~Pf~~|IGSS<br>~~Pf~~|—<br>~~ef~~|—<br>~~ef~~|±100<br>~~ef~~|nA<br>~~ef~~|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 6)<br>~~Pf~~<br>~~ef~~<br>~~eee~~|||||||
|Gate Threshold Voltage<br>~~eee~~|VGS(TH)<br>~~eee~~|2<br>~~eee~~|—<br>~~eee~~|4<br>~~eee~~|V<br>~~eee~~|VDS= VGS,ID= 250µA<br>~~eee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|7.4<br>~~ee~~|9.5<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 13A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.8<br>~~ee~~|1.3<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 13A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS**(Note 7)<br>~~eeeeeses i~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|4468<br>~~es~~<br>~~es~~|—<br>~~es~~<br>~~es i~~|pF<br>~~es~~<br>~~i~~|VDS= 50V, VGS= 0V<br>f = 1MHz<br>~~es~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|746<br>~~es~~<br>~~es~~|—<br>~~es~~<br>~~es i~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|31.6<br>~~es~~<br>~~es~~|—<br>~~es~~<br>~~es i~~|||
|Gate Resistance<br>~~===~~|Rg<br>~~ee ~~<br>~~===~~|—<br> ~~ee ~~<br>~~===~~|0.9<br> ~~es ~~<br>~~===~~|—<br> ~~es i~~|Ω<br>~~i~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge<br>~~===~~|Qg<br>~~===~~|—<br>~~===~~|56.4<br>~~===~~|—|nC|VDD= 50V, ID= 13A,<br>VGS= 10V<br>~~ee~~|
|Gate-Source Charge<br>~~===~~|Qgs<br>~~===~~|—<br>~~===~~|15.4<br>~~===~~|—|||
|Gate-Drain Charge<br>~~===~~|Qgd<br>~~===~~|—<br>~~===~~|14.0<br>~~===~~|—|||
|Turn-On DelayTime<br>~~===~~|tD(ON)<br>~~===~~|—<br>~~===~~|18.6<br>~~===~~|—|ns|VDD= 50V, VGS= 10V,<br>ID= 13A, Rg= 6Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~===~~|tR<br>~~===~~|—<br>~~===~~|22.5<br>~~===~~|—|||
|Turn-Off DelayTime<br>~~===~~<br>~~|~~|tD(OFF)<br>~~===~~|—<br>~~===~~|44.8<br>~~===~~|—|||
|Turn-Off Fall Time<br>~~===~~|tF<br>~~===~~|—<br>~~===~~|29.5<br>~~===~~|—|||
|Reverse RecoveryTime<br>~~===~~|tRR<br>~~===~~|—<br>~~===~~|54.5<br>~~===~~|—|ns|IF= 13A, di/dt = 100A/µs<br>~~ee~~|
|Reverse RecoveryCharge|QRR|—|106.4|—|nC||



- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

   6. Short duration pulse test used to minimize self-heating effect. 

   7. Guaranteed by design. Not subject to product testing. 

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30.0  30<br>VGS=5.0V VDS = 5.0V<br>25.0  f VGS = 6.0V e 25 e ee<br>VGS = 10.0V<br>20.0  f o 20 | eee<br>VGS = 4.5V<br>15.0  | 15 eee |e<br>125 ℃<br>10.0  | aa 10 ee )<br>150 ℃<br>85 ℃<br>5.0  p o VGS = 4.0V 5 eee 175 ℃ /t , 25 ℃<br>VGS = 3.5V -55 ℃<br>_Zy<br>0.0  0<br>po fh<br>0 0.5 1 1.5 2 2.5 3 2 2.5 3 3.5 4 4.5 5 5.5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.0090  0.03<br>0.0085<br>0.025<br>0.0080<br>0.02<br>0.0075<br>0.015<br>0.0070<br>VGS = 10V<br>0.0065  0.01 ID = 13A<br>0.005<br>0.0060<br>0.0055  0<br>0 5 10 15 20 25 30 0 4 8 12 16 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.018 2.2<br>0.016 175 ℃ VGS = 10VGS = 10V= 10V 2<br>0.014 150 ℃ 1.8<br>1.6<br>0.012<br>125 ℃ SS 1.4 Ce<br>0.01<br>85 ℃ 1.2<br>0.008<br>1<br>e 25 ℃ e ee eee<br>0.006<br>0.8 VGS = 10V, ID = 13A<br>0.004 -55 ℃ SS 0.6 ae<br>0.002 SSS 0.4 Pt tt tT tT TT<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A)D, DRAIN CURRENT (A), DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>)W<br>)(W<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)(WW<br>(NORMALIZED)<br>,  DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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0.018<br>VGS = 10VGS = 10V= 10V<br>0.016 175 ℃<br>0.014 150 ℃<br>0.012<br>125 ℃ SS<br>0.01<br>85 ℃<br>0.008<br>e 25 ℃ e<br>0.006<br>0.004 -55 ℃ SS<br>0.002 SSS<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)D, DRAIN CURRENT (A), DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Temperature<br>(W)(WW<br>,  DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.016 3.6<br>0.015 TTTTIfTTfoty 3.4 a<br>3.2<br>0.014<br>ce ee 4 po<br>3<br>0.013 a — Nae<br>2.8<br>0.012 a a RR<br>2.6 ID = 250μA<br>0.011 FP | | ctllm cdT UY 2.4 Po / — rl<br>0.01 Oe 2.2 TT So<br>0.009 2 ID = 1mA<br>a, a Soa<br>0.008 1.8<br>0.007 PSS 1.6 EEEECEASSN<br>1.4<br>0.006 VGS = 10V, ID = 75A 1.2<br>0.005 Be —| 1 |EES| | | | | fT ff<br>0.004 es 0.8 a<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs.<br>JunctionTemperature<br>30 10000<br>f=1MHz<br>25 T VGS = 0V y aSee ee S. Ciss<br>1000<br>2015 o HWw 100  meSEER Coss  EEE<br>===><br>10 IR] TA = 85 ℃ be Crss = eS= =<br>TA = 125 ℃ 10<br>TA = 25 ℃<br>5 TA = 150 ℃ Ht}nl || a[|==ee| ft=| TNIN SS<br>TA = 175 ℃ TA = -55 ℃<br>0 YW) 1  a ee ee ee ee ee ee<br>0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 50 60 70 80 90 100<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 1000<br>RDS(ON) Limited PW =1µs<br>a NA<br>8<br>100<br>6<br>Ppa TTI NSAI TTT<br>10 PW =10s<br>4 PW =100s “<br>VDS = 50V, ID = 13A TJ(Max) = 175 ℃   QINll<br>1 TC = 25 ℃ PW =1ms<br>2 Single Pulse PW =10ms<br>DUT on Infinite<br>Heatsink PW b paain<br>VGS= 10V itt DC<br>0 0.1<br>0 10 20 30 40 50 60 0.1 1 10 100 1000<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>)(W<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>(V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>D=0.7<br>Sam Fy D=0.5  CiaHILns eeeaeTTTee<br>NH<br>D=0.3<br>FG D=0.9<br>0.1 TPa MT MMMS l AAT Tv TTUNMlCUTTITCT<br>Bo D=0.1 EE H H<br>Sa eee eee eee iee<br>D=0.05<br>a a a<br>9A<br>a h 7AU<br>D=0.02<br>A |<br>0.01 pAa a A | Nyti OO|ELIE ELIE OOELT OOLIUOO<br>D=0.01<br>SerT NZaa! Nee a a e ee eetieeee<br>oo D=0.005 A ST oo RθJC(t) = r(t) * RθJC<br>mead a BI<br>D=Single Pulse RθJC = 0.81 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure:  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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||||||||||
|---|---|---|---|---|---|---|---|---|
|Package Outline Dimensions|
|Please see http://www.diodes.com/package-outlines.html for the latest version.|
|TO220AB|
|E|A|TO220AB|
|E/2|A1|Dim Min|Max|Typ|
|A|3.56|4.82|-|
|t|Q|oes||,|GREE|A1|0.51|1.39|-|
|H1|H1|A2|2.04|2.92|-|
|b|0.39|1.01|0.81|
|D2|b2|1.15|1.77|1.24|
|D|c|0.356|0.61|-|
|E1|D|14.22 16.51|-|
|D1|L2|D1|8.39|9.01|-|
|D2|11.45 12.87|-|
|i|||ed.|ce|e|-|-|2.54|
|L1|e1|-|-|5.08|
|E|9.66 10.66|-|
|A2|E1|6.86|8.89|-|
|b2|H1|5.85|6.85|-|
|L|
|L|12.70 14.73|-|
|L1|-|4.42|-|
|L2|15.80 17.51 16.00|
|P|3.54|4.08|-|
|c|Q|2.54|3.42|-|
|b|All Dimensions in mm|
|e|
|e1|

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DMTH10H010SCT Document number: DS39681  Rev. 3 - 2 

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**DMTH10H010SCT** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

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July 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH10H010SCT/power-mosfet-n-channel-100-v-a-7400-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth10h010sct/mosfet-n-ch-100v-100a-to-220ab/dp/3943892)
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