# Power MOSFET, N Channel, 100 V, 14 A, 6400 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3619757RL/)

**URL**: https://novapart.co/products/DMTH10H009LFG-7/power-mosfet-n-channel-100-v-14-a-6400-ohm-powerdi
**SKU**: DMTH10H009LFG-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4710
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0064ohm |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 14A |
| Drain Source On State Resistance | 6400µohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3619757RL/)

**DMTH10H009LFG** 

**Green** 

**100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID MAX**<br>**TC = +25°C**|
|100V|8.5mΩ @ VGS= 10V|55A|
||12.5mΩ @ VGS= 4.5V|45A|



## **Features and Benefits** 

- Low RDS(ON) – Ensures On State Losses are Minimized 

- Excellent Qgd × RDS(ON) Product (FOM) 

- Advanced Technology for DC/DC Converters 

- Small Form Factor Thermally Efficient Package Enables Higher Density End Products 

- Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 

- 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Application 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen- and Antimony-Free. “Green” Device (Note 3)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance 

(RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- Synchronous Rectifier 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

## **Mechanical Data** 

- Case: PowerDI[®] 3333-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Lead-Frame. Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.034 grams (Approximate) 

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PowerDI3333-8<br>S S Pin 1 D<br>S<br>G<br>G<br>D<br>D<br>D<br>IS D s<br>S<br>Bottom View  Top View  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMTH10H009LFG-7|PowerDI3333-8|2,000/Tape & Reel|
|DMTH10H009LFG-13|PowerDI3333-8|3,000/Tape & Reel|



Notes: 

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

**Marking Information** 

H09 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) **H09** ~~rr~~ _PowerDI is a registered trademark of Diodes Incorporated._ 

1 of 7 **www.diodes.com** 

DMTH10H009LFG 

December 2020 © Diodes Incorporated 

Document number: DS42437 Rev. 3 - 2 

**DMTH10H009LFG** 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|100|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= 10V|TA= +25°C<br>TA= +100°C|ID|14<br>10|A|
||TC= +25°C<br>TC= +100°C|ID|55<br>39|A|
|Maximum Continuous Body Diode Forward Current (Note 5)||IS|30|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)||IDM|220|A|
|Pulsed BodyDiode Continuous Current(10µs Pulse,DutyCycle = 1%)||ISM|220|A|
|Avalanche Current(L = 1mH)||IAS|17|A|
|Avalanche Energy (L = 1mH)||EAS|144.5|mJ|



## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|2.5|W|
|Thermal Resistance, Junction to Ambient(Note 5)||RθJA|60|°C/W|
|Total Power Dissipation|TC= +25°C|PD|39|W|
|Thermal Resistance,Junction to Case||RθJC|3.8|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 6)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|100|—|—|V|VGS= 0V,ID= 1mA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|µA|VDS= 80V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 6)**|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1.1<br>~~ee~~|—<br>~~ee~~|2.5<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|6.4<br>~~ee~~|8.5<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID= 20A<br>~~ee~~|
|||—<br>~~ee~~|8.2<br>~~ee~~|12.5<br>~~ee~~||VGS= 4.5V,ID= 10A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.8<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 20A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~———ee~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~ee~~|—<br>~~ee~~|2361<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~<br>~~e~~|VDS= 50V, VGS= 0V<br>f = 1MHz<br>~~ee~~|
|Output Capacitance<br>~~———~~|Coss<br>~~ee~~|—<br>~~ee~~|611<br>~~ee~~|—<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~———~~<br>~~——~~|Crss<br>~~ee~~|—<br>~~ee~~|16<br>~~ee~~|—<br>~~ee~~<br>~~e~~|||
|Gate Resistance<br>~~———~~<br>~~——~~|Rg<br>~~ee~~|—<br>~~ee~~|1.7<br>~~ee~~|—<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge<br>~~——— ~~<br>~~——~~|Qg<br> ~~ee~~|—<br>~~ee~~|41<br>~~ee~~|—<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~<br>~~ee~~|VDD= 50V, ID= 13A,<br>VGS= 10V<br>~~ee~~<br>~~ee~~|
|Gate-Source Charge<br>~~——~~|Qgs|—|7.3|—<br>~~e~~|||
|Gate-Drain Charge<br>~~——~~<br>~~—————~~|Qgd|—|9.3<br>~~ee~~|—<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~——~~<br>~~—————~~|tD(ON)|—|7<br>~~ee~~|—<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VDD= 50V, VGS= 10V,<br>ID= 13A, Rg= 6Ω<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~——~~<br>~~—————~~|tR|—|12<br>~~ee~~|—<br>~~e~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—————~~|tD(OFF)|—|42<br>~~ee~~|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—————~~|tF|—|24<br>~~ee~~|—<br>~~ee~~|||
|Reverse RecoveryTime<br>~~—————~~<br>~~a~~|tRR<br>~~a~~|—<br>~~a~~|45<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~a~~|ns<br>~~ee~~<br>~~a~~|IF= 13A, di/dt = 100A/µs<br>~~ee~~<br>~~a~~|
|Reverse RecoveryCharge<br>~~a~~|QRR<br>~~a~~|—<br>~~a~~|68<br>~~a~~|—<br>~~a~~|nC<br>~~a~~||



7. Guaranteed by design. Not subject to product testing. 

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30.0<br>VGS = 3.5V<br>25.0 VGS = 4.0V<br>ir |<br>VGS = 4.5V<br>20.0 VGS = 10V  VGS = 3.2V<br>Boo<br>15.0<br>10.0 | / VGS = 3.0V<br>5.0<br>VGS = 2.5V  VGS = 2.7V<br>0.0<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>0.012<br>0.01<br>VGS = 4.5V<br>0.008<br>0.006<br>VGS = 10V<br>0.004<br>0.002<br>0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current<br>and Gate Voltage<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.016<br>VGS = 10V<br>0.014<br>TJ = 175 ℃<br>0.012 a)<br>TJ = 150 ℃<br>0.01<br>S a<br>TJ = 125 ℃<br>0.008<br>TJ = 85 ℃<br>0.006<br>TJ = 25 ℃<br>0.004 i<br>TJ = -55 ℃<br>0.002 AS T<br>0 P| tf ff<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Junction Temperature<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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30<br>VDS = 5V<br>25<br>ee e |e<br>20<br>TJ = 175 ℃<br>15<br>10 TJ T= 125J = 150 ℃℃ LH]<br>TJ = 85 ℃<br>5<br>TJ = 25 ℃<br>TJ = -55 ℃<br>0<br>1 1.5 2 2.5 3 3.5 4<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>0.3<br>0.25 tttft |<br>0.2<br>ID = 10A<br>0.15 FE | E<br>0.1<br>AEE<br>ID = 20A<br>0.05 r e<br>0 e e<br>0 4 8 12 16 20<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.4<br>2.2<br>2<br>EE<br>1.8<br>VGS = 10V, ID = 20A<br>1.6 ay<br>1.4<br>1.2<br>cee ane<br>1<br> VGS = 4.5V, ID = 10A<br>0.8 ee FE<br>0.6 A<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 6. On-Resistance Variation with Junction<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMTH10H009LFG** 

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0.02<br>0.018 Pt ttt tt te<br>0.016 Pt tT tT TT |<br>0.014 Pt tT tt tT tT | UY<br>0.012  VGS = 4.5V, ID = 10A<br>0.01 Se = Pareas<br>0.008 aa ee<br>0.006 Sa 4a<br>0.004 VGS = 10V, ID = 20A<br>0.002 | aa | td |<br>0 Ft tt ttt tt<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction<br>Temperature<br>30<br>VGS = 0V<br>25<br>ee  |e<br>20 i f<br>15 TJ = 175 [o] C<br>ee TJ = 150 [o] C  |<br>10<br>TJ = 125 [o] C<br>TJ = 85 [o] C<br>5<br>TJ = 25 [o] C<br>TJ = -55 [o] C<br>0<br>Dy<br>0 0.3 0.6 0.9 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current<br>10<br>8<br>6<br>4<br>VDS = 50V, ID = 13A<br>2<br>0<br>0 5 10 15 20 25 30 35 40 45<br>Qg (nC)<br>Figure 11. Gate Charge<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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2.4<br>2.2<br>Pt tt tt tT<br>2<br>Sw<br>1.8<br>oo A<br>ID = 1mA<br>1.6<br>1.4 NoN A a<br>1.2 NR<br>1 ID = 250μA<br>oN<br>0.8<br>0.6 NA<br>Pt tte tee<br>0.4 PEt;TE teTNtt<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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10000<br>f = 1MHz<br>Ciss<br>====ge=206<br>1000<br>S e s<br>Coss<br>100<br>S e e<br>10 Crss<br>1<br>FEES ESE<br>0 20 40 60 80 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>1000<br>R<br>DS(ON)<br>Limited  PW = 1µs<br>100<br>10<br>PW = 10µs<br>PW = 100µs<br>1 PW = 1ms<br>TTJ(Max) C = 25= 175 ℃ ℃ PW = 10ms<br>Single Pulse  PW = 100ms<br>0.1 DUT on  Infinite<br>DC<br>Heatsink<br>0.01 VGS = 10V  ta<br>0.1 1 10 100 1000<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMTH10H009LFG Document number: DS42437 Rev. 3 - 2 

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**DMTH10H009LFG** 

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1<br>eeee<br>erent<br>P D=0.5  T D=0.9  tt rt<br>ANI TIT<br>D=0.3  D=0.7<br>10a CE TAIL TTT<br>0.1 | Me LIL LEMELAIMAETT<br>a D=0.1  sere ee TTL<br>= anti oi |<br>eeAAa aol D=0.05  aa a el<br>SG D=0.02  TE TIE TTT<br>D=0.01<br>Cf Pr CTI CITTIIIE CEEeME CCIECCITT<br>0.01 Gil D=0.005  CEA ETI TTT ETE TIE ETAT EU<br>Z4aill 1 sO Be OOOO OO OC GO GO<br>D=Single Pulse<br>PT [TTT] PO TT CTT<br>a ee RθJC(t) = r(t) * RθJC el<br>RθJC = 3.8 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMTH10H009LFG Document number: DS42437 Rev. 3 - 2 

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**DMTH10H009LFG** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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**----- Start of picture text -----**<br>
PowerDI3333-8<br>A1 A3<br>A<br>Seating Plane PowerDI3333-8<br>Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>ere D — A1  0.00 0.05 0.02<br>D2 L( 4x) A3  −  −  0.203<br>1 b  0.27  0.37  0.32<br>b2  0.15  0.25  0.20<br>Pin #1 ID D  3.25  3.35  3.30<br>b2( 4x) E4 D2  2.22  2.32  2.27<br>E  3.25 3.35 3.30<br>aa ==== E2  1.56  1.66  1.61<br>E E3  0.79  0.89  0.84<br>E2 E3 E4  1.60  1.70  1.65<br>e  −  −  0.65<br>L  0.35 0.45 0.40<br>L1( 3x) L1  −  −  0.39<br>8 z  −  −  0.515<br>z( 4x) b All Dimensions in mm<br>e<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI3333-8** 

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X3<br>X2<br>8<br>Y4<br>Y1 X1<br>Y2<br>Y3<br>et<br>Y<br>1<br>goo X C<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|0.650|
|**X**|0.420|
|**X1**|0.420|
|**X2**|0.230|
|**X3**|2.370|
|**Y**|0.700|
|**Y1**|1.850|
|**Y2**|2.250|
|**Y3**|3.700|
|**Y4**|0.540|



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DMTH10H009LFG Document number: DS42437 Rev. 3 - 2 

December 2020 © Diodes Incorporated 

**DMTH10H009LFG** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2020 Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMTH10H009LFG Document number: DS42437 Rev. 3 - 2 

December 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMTH10H009LFG-7/power-mosfet-n-channel-100-v-14-a-6400-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmth10h009lfg-7/mosfet-n-ch-100v-14a-powerdi-3333/dp/3619757RL)
---

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