# Power MOSFET, N Channel, 60 V, 8.9 A, 0.16 ohm, UDFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3577039/)

**URL**: https://novapart.co/products/DMT6016LFDF-7/power-mosfet-n-channel-60-v-89-a-016-ohm-udfn2020
**SKU**: DMT6016LFDF-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2640
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | DMT6016LFDF |
| Qualification | AEC-Q101 |
| Power Dissipation | 820mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | UDFN2020 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.9A |
| Drain Source On State Resistance | 0.16ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3577039/)

**DMT6016LFDF** 

**60V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|60V|16mΩ@VGS= 10V|8.9A|
||27mΩ@VGS= 4.5V|6.8A|



## **Features and Benefits** 

- 100% Unclamped Inductive Switch (UIS) Test in Production 

- 0.6mm Profile – Ideal for Low Profile Applications 

- • PCB Footprint of 4mm[2] 

- Low On-Resistance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **Halogen and Antimony Free. "Green" Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Applications** 

- Load Switch 

- Adaptor Switch 

- Notebook PC 

## **Mechanical Data** 

- Case: U-DFN2020-6 (Type F) 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e4** 

- Weight: 0.007 grams (Approximate) 

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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|
|||||
|**Part Number**|**Marking**|**Reel Size(inches)**|**Quantity per Reel**|
|DMT6016LFDF-7|T6|7|3000|
|DMT6016LFDF-13|T6|13|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

1 of 8 **www.diodes.com** 

DMT6016LFDF Datasheet number: DS37203 Rev. 7 - 2 

March 2020 © Diodes Incorporated 

**DMT6016LFDF** 

## **Marking Information** 

Site 1: 

T6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) 

Date Code Key **Year 2013 … 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028** ~~ee~~ **Code** A … G H I J ~~ee~~ K ~~ee~~ L ~~ee~~ M ~~ee~~ N ~~ee~~ O ~~ee~~ P **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 ~~ee~~ 6 7 ~~ee~~ 8 ~~ee~~ 9 ~~ee~~ O ~~ee~~ N D Site 2: T6 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: H = 2020) 

W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal code (ex: U = Monday) 

|Date Code Key<br>**Year**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**2026**<br>**2027**<br>**2028**<br>**Code**<br>**0**<br>**1**<br>**2**<br>**3**<br>**4**<br>**5**<br>**6**<br>**7**<br>**8**<br>~~se~~<br>~~ee ee~~<br>~~ee~~|
|---|
|**Week**<br>**1-26**<br>**27-52**<br>**53**<br>**Code**<br>**A-Z**<br>**a-z**<br>**z**<br>~~ee~~|
|**Internal Code**<br>**Sun**<br>**Mon**<br>**Tue**<br>**Wed**<br>**Thu**<br>**Fri**<br>**Sat**<br>**Code**<br>**T**<br>**U**<br>**V**<br>**W**<br>**X**<br>**Y**<br>**Z**<br>~~ee~~<br>~~eeee~~<br>~~ee~~|



2 of 8 **www.diodes.com** 

DMT6016LFDF Datasheet number: DS37203 Rev. 7 - 2 

March 2020 © Diodes Incorporated 

**DMT6016LFDF** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|8.9<br>7.1|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|11.1<br>8.9|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|60|A|
|Maximum BodyDiode Continuous Current|||IS|2.2|A|
|Avalanche Current(Note 7)L = 0.1mH|||IAS|15.3|A|
|Avalanche Energy (Note 7)L = 0.1mH|||EAS|11.7|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|**Thermal Characteristics **|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.82|W|
||TA= +70°C||0.52||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|153|°C/W|
||t<10s||97||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.9|W|
||TA= +70°C||1.2||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|66|°C/W|
||t<10s||42||
|Thermal Resistance,Junction to Case(Note 6)||RθJC|14.7||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|60|||V|VGS= 0V,ID= 250µA|
|Zero Gate Voltage Drain Current|IDSS|||1|µA|VDS= 48V,VGS= 0V|
|Gate-Source Leakage|IGSS|||±100|nA|VGS=±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 8)**|||||||
|Gate Threshold Voltage<br>~~es~~|VGS(TH)<br>~~es~~|1.0<br>~~es~~|<br>~~es~~|3.0<br>~~es~~|V<br>~~es~~|VDS= VGS,ID= 250µA<br>~~es~~|
|Static Drain-Source On-Resistance<br>~~es~~|RDS(ON)<br>~~es~~|<br>~~es~~|12.2<br>~~es~~|16<br>~~es~~|mΩ<br>~~es~~|VGS= 10V,ID= 10A<br>~~es~~|
|||<br>~~es~~|17.2<br>~~es~~|27<br>~~es~~||VGS= 4.5V,ID= 6A<br>~~es~~|
|Diode Forward Voltage<br>~~es~~|VSD<br>~~es~~|<br>~~es~~|0.7<br>~~es~~|1.2<br>~~es~~|V<br>~~es~~|VGS= 0V,IS= 1A<br>~~es~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|864<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= 30V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|282<br>~~ee~~|<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|27.1<br>~~ee~~|<br>~~ee~~|||
|Gate Resistance<br>~~ee~~<br>~~——_—~~|Rg<br>~~ee~~<br>~~——_—~~|<br>~~ee~~|1.35<br>~~ee~~|<br>~~ee~~|Ω<br>~~ee~~<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~——_—~~|Qg<br>~~——_—~~||17||nC<br>~~ee~~|VDS= 30V, ID= 10A<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~——_—~~|Qg<br>~~——_—~~||8.4||||
|Gate-Source Charge<br>~~——_—~~|Qgs<br>~~——_—~~||3.1||||
|Gate-Drain Charge<br>~~——_—~~|Qgd<br>~~——_—~~||4.3||||
|Turn-On DelayTime<br>~~——_—~~<br>~~——~~|tD(ON)<br>~~——_—~~<br>~~——~~|<br>~~——~~|3.4<br>~~——~~|<br>~~——~~|nS<br>~~ee~~<br>~~——~~|VGS= 10V, VDD= 30V, Rg= 6Ω,<br>ID= 10A<br>~~ee~~<br>~~——~~|
|Turn-On Rise Time<br>~~——_—~~<br>~~——~~|tR<br>~~——_—~~<br>~~——~~|<br>~~——~~|5.2<br>~~——~~|<br>~~——~~|||
|Turn-Off DelayTime<br>~~——~~|tD(OFF)<br>~~——~~|<br>~~——~~|12.9<br>~~——~~|<br>~~——~~|||
|Turn-Off Fall Time<br>~~——~~|tF<br>~~——~~|<br>~~——~~|6.8<br>~~——~~|<br>~~——~~|||
|BodyDiode Reverse RecoveryTime<br>~~——~~|tRR<br>~~——~~|<br>~~——~~|22<br>~~——~~|<br>~~——~~|nS<br>~~——~~|IS= 10A,dI/dt = 100A/μs<br>~~——~~|
|BodyDiode Reverse RecoveryCharge|QRR||11.1||nC|IS= 10A,dI/dt = 100A/μs|



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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DMT6016LFDF Datasheet number: DS37203 Rev. 7 - 2 

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**DMT6016LFDF** 

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30.0 30<br>VGS = 10V VDS = 5.0V<br>27.0 V GS = 4.0V 27<br>VGS = 4.5V<br>24.0 24<br>21.0 21<br>A<br>18.015.0 fo 1815 eee<br>VGS = 3.5V<br>12.0 12<br>9.0 [SS 9 e T A  = 150°C /a °C | TA = 85 ° CC<br>6.0 6 TA = 125 ° CC TA = 25°C°C<br>3.0 V GS = 3.0V 3 TA = -55°C°C<br>0.0 0<br>0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.03 0.025<br>VGS = 10V<br>TA = 150°C°C<br>0.025 V GS = 4.5V<br>HT 0.02 RoR RRREEEE T A  = 125°C°C<br>0.02<br>TA = 85°C°C<br>ATLL ||<br>0.015 0.015<br>VGS = 10V<br>TA = 25°C°C<br>Le ||<br>0.01<br>0.01 T A  = -55 °C<br>TL —_<br>0.005<br>0 LEELA 0.005 EATTTTTTELLELER<br>0 3 6 9 12 15 18 21 24 27 30 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.8 0.04<br>1.6 V GS   10= V 0.035<br>ID = 10A 0.03 VGS = 4.5V<br>ID = 6A<br>1.4 HTT TT EEE<br>Se 0.025 He<br>Wx VGS = 4.5V a<br>1.2 ID = 6A 0.02<br>4 CP TT<br>0.015 V GS   10= V<br>1 ID = 10A<br>[a 0.01 ee<br>0.8<br>0.005<br>STITT TT) |  eeEFER<br>0.6 Pi LE ELLE 0 OEEEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br> I  I<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


4 of 8 **www.diodes.com** 

DMT6016LFDF 

March 2020 

© Diodes Incorporated 

Datasheet number: DS37203 Rev. 7 - 2 

**DMT6016LFDF** 

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2.532 Tht)SN 7<br>ID = 1mA<br>ID = 250µA A<br>1.5 cpSEATON<br>1 TTT RS<br>N<br>0.5 LETT<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C)<br>Figure 7 Gate Threshold Variation vs. Ambient Temperature<br>10000<br>TA = 150°C°C<br>= T A = 125 ° CC<br>1000 ——<br>———————— T A = 85°°CC<br>100<br>—————<br>SS<br>10<br>T A  = 25 ° CC<br>===<br>1 — =<br>0.1 a<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Typical Drain-Source Leakage Current vs. Voltage<br>10 Fill Ty<br>8<br>6 VID DS   10= = 30VA<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14 16 18<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>Figure 11 Gate Charge<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, DRAIN LEAKAGE CURRENT (nA)<br>IDSS<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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30<br>2724 ||ee<br>21 ||<br>18 ee<br>15<br>12 e||EEs TA = 150°C°C  ||<br>9 T A = 125 ° C C TA = 25 ° CC<br>6 AT T A = 85°C°C TA = -55°C°C<br>— of<br>3<br>0 w/eDD<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 8 Diode Forward Voltage vs. Current<br>10000 ===<br>1000 ———— C iss<br>—j |_| [| | | ||<br>Coss<br>eee<br>100 pt<br>|<br>C rss<br>10<br>=ooeeenS<br>SSS SS SS SS SS<br>f = 1MHz<br>1 es<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>100<br>RDS(on)<br>Limited<br>Simoes an ect<br>10<br>DC<br>1 PW = 10s<br>PW = 1s<br>PW = 100ms<br>0.1 PW = 10ms<br>PW = 1ms<br>0.01 T TJ(max)A = 25° = °CC  150 ° CC P W  = 100µs<br>VGS = 10V<br>Single Pulse<br>0.001 DUT on 1 * MRP Board LU LEE EET<br>0.01 0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMT6016LFDF Datasheet number: DS37203 Rev. 7 - 2 

March 2020 

© Diodes Incorporated 

**DMT6016LFDF** [sid 

## DOES. 

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1<br>D = 0.9<br>SSS SS SS — Se<br>et D = 0.7 ee nnee—0<br>Ceo D = 0.5 ee<br>|<br>D = 0.3<br>Pq EAE gar<br>TEILe LUI CLI | TENT UTIT<br>0.1<br>Ft D = 0.1<br>a a  /2 8 OO 0 OO<br>EEae Oa<br>PT D = 0.05<br>a |<br>LEPE<br>D = 0.02<br>Pl IM A TIE ETEIE EETIA TTT ETT<br>0.01<br>Fe D = 0.01 oe EE<br>EE SEEE<br>Zt D = 0.005 a R θJA (t) = r(t) * R θJA Cimal<br>RθJA = 152 °C/W<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMT6016LFDF Datasheet number: DS37203 Rev. 7 - 2 

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**DMT6016LFDF** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type F)** 

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U-DFN2020-6<br>A1 A3 (Type F)<br>A Dim  Min  Max  Typ<br>A  0.57 0.63  0.60<br>Seating Plane A1  0.00 0.05 0.03<br>Ld te == A3  -  -  0.15<br>b  0.25  0.35  0.30<br>D D  1.95  2.05  2.00<br>D2  0.85  1.05  0.95<br>e3 e4<br>D2a  0.33  0.43  0.38<br>E  1.95 2.05 2.00<br>E2  1.05 1.25 1.15<br>k2 E2a  0.65  0.75  0.70<br>D2a e  0.65 BSC<br>z2<br>e2  0.863 BSC<br>D2 e3  0.70 BSC<br>E E2a E2 e4  0.325 BSC<br>k  0.37 BSC<br>k1 k1  0.15 BSC<br>k e2 L k2  0.36 BSC<br>z1 L  0.225 0.325 0.275<br>put Ay a<br>z  0.20 BSC<br>Ofdb fp z1  0.110 BSC<br>z2  0.20 BSC<br>e b<br>All Dimensions in mm<br>z( t 4x) alsigt ==<br>Suggested Pad Layout<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>U-DFN2020-6 (Type F)<br>X3<br>C X Y<br>Value<br>Dimensions<br>(in mm)<br>C  0.650<br>| Si X  0.400<br>X1  0.480<br>it | X2  0.950<br>Y3 Y2 Y1 Y4 X3  1.700<br>Y  0.425<br>Y1  0.800<br>X1 Y2  1.150<br>Y3  1.450<br>= Pin1 Y4  2.300<br>dod X2<br>**----- End of picture text -----**<br>


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DMT6016LFDF Datasheet number: DS37203 Rev. 7 - 2 

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**DMT6016LFDF** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMT6016LFDF Datasheet number: DS37203 Rev. 7 - 2 

March 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMT6016LFDF-7/power-mosfet-n-channel-60-v-89-a-016-ohm-udfn2020)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmt6016lfdf-7/mosfet-n-ch-60v-8-9a-udfn2020/dp/3577039)
---

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