# Power MOSFET, N Channel, 60 V, 60 A, 5000 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3943870RL/)

**URL**: https://novapart.co/products/DMT6008LFG-13/power-mosfet-n-channel-60-v-a-5000-ohm-powerdi
**SKU**: DMT6008LFG-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3230
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 41W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 60A |
| Drain Source On State Resistance | 5000µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943870RL/)

**DMT6008LFG N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TC = +25°C**<br>60V<br>7.5mΩ@VGS= 10V<br>60A<br>11.5mΩ@VGS= 4.5V<br>49A|**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TC = +25°C**<br>60V<br>7.5mΩ@VGS= 10V<br>60A<br>11.5mΩ@VGS= 4.5V<br>49A|**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TC = +25°C**<br>60V<br>7.5mΩ@VGS= 10V<br>60A<br>11.5mΩ@VGS= 4.5V<br>49A|
|---|---|---|
|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TC = +25°C**|
|60V|7.5mΩ@VGS= 10V|60A|
||11.5mΩ@VGS= 4.5V|49A|



## **Description** 

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Synchronous Rectifier 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

## **Features and Benefits** 

- Low RDS(ON) – Ensures on State Losses Are Minimized 

- Excellent Qgd x RDS (ON) Product (FOM) 

- Advanced Technology for DC/DC Converts 

- Small Form Factor Thermally Efficient Package Enables Higher Density End Products 

- Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 

- 100% UIS (Avalanche) rated 

- ESD Protected Gate 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- • **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

® • Case: POWERDI 3333-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See diagram 

- Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

• Weight: 0.008 grams (approximate) 

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S Pin 1 D<br>S<br>S<br>G<br>G<br>D<br>ESD PROTECTED D<br>D<br>x iS D  @ Top View  £ Gate Protection Diode £ S<br>Bottom View<br>Internal Schematic<br>g Information Information (Note 4)<br>Part Number Case Packaging<br>DMT6008LFG-7  POWERDI3333-8  2,000/Tape & Reel<br>DMT6008LFG-13  POWERDI3333-8  3,000/Tape & Reel<br>**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

S6E = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 13 = 2013) WW = Week code (01 ~ 53) 

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DMT6008LFG Document number: DS36680 Rev. 2 - 2 

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**DMT6008LFG** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±12|V|
|Continuous Drain Current (Note 5) VGS= 10V|TA= +25°C<br>TA= +70°C|ID|13<br>11|A|
||TC= +25°C<br>TC= +70°C|ID|60<br>48|A|
|Maximum Continuous Body Diode Forward Current (Note 5)||IS|3|A|
|Pulsed Drain Current (10μs pulse, duty cycle = 1%)||IDM|80|A|
|Avalanche Current  (Note 6)||IAS|13|A|
|Avalanche Energy (Note 6)||EAS|25|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|2.2|W|
||TC= +25°C||41||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RθJA|58|°C/W|
||t<10s||35||
|Thermal Resistance, Junction to Case (Note 5)||RθJC|3||
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~_—————————————~~|**Symbol**<br>~~_—————————————~~|**Min**<br>~~_—————————————~~|**Typ **<br>~~_—————————————~~|**Max**<br>~~_—————————————~~|**Unit**<br>~~_—————————————~~|**Test Condition**<br>~~_—————————————~~|
|**OFF CHARACTERISTICS(Note 7) **<br>~~_—————————————~~|||||||
|Drain-Source Breakdown Voltage<br>~~_—————————————~~|BVDSS<br>~~_—————————————~~|60<br>~~_—————————————~~|—<br>~~_—————————————~~|—<br>~~_—————————————~~|V<br>~~_—————————————~~|VGS= 0V, ID= 1mA<br>~~_—————————————~~|
|Zero Gate Voltage Drain Current<br>~~a~~|IDSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|1<br>~~a~~|μA<br>~~a~~|VDS= 48V, VGS= 0V<br>~~a~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~a~~|—<br>~~a~~|—<br>~~a~~|±10<br>~~a~~|μA<br>~~a~~|VGS= ±10V, VDS= 0V<br>~~a~~|
|**ON CHARACTERISTICS(Note 7) **|||||||
|Gate Threshold Voltage<br>~~BS~~|VGS(th)|0.7<br>~~a~~|—<br>~~ee~~|2.0|V<br>~~PO~~|VDS= VGS, ID= 250μA<br>~~PO~~|
|Static Drain-Source On-Resistance<br>~~BS~~|RDS(ON)<br>~~fe~~|—<br>~~a~~|5.0<br>~~ee~~|7.5|mΩ<br>~~PO~~<br>~~ff~~|VGS= 10V, ID= 20A<br>~~PO~~|
|||—<br>~~a~~|6.5<br>~~ee~~|11.5||VGS= 4.5V, ID= 20A<br>~~PO~~|
|||—<br>~~a~~<br>~~fe~~|19<br>~~ee~~<br>~~ff~~|—<br>~~ff~~||VGS= 3V, ID= 3A<br>~~PO~~<br>~~ff~~|
|Diode Forward Voltage<br>~~BS~~<br>~~Ce~~|VSD<br>~~Ce~~<br>~~fe~~|—<br>~~a ~~<br>~~Ce~~<br>~~fe~~|0.9<br> ~~ee~~<br>~~Ce~~<br>~~ff~~|1.2<br>~~Ce~~<br>~~ff~~|V<br>~~PO~~<br>~~Ce~~<br>~~ff~~|VGS= 0V, IS= 20A<br>~~PO~~<br>~~Ce~~<br>~~ff~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~fe~~<br>~~ff~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|—<br>~~ee~~|2713<br>~~ee~~|—<br>~~ee~~|pF<br>~~ee~~|VDS= 30V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|—<br>~~ee~~|822<br>~~ee~~|—<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|—<br>~~ee~~|57<br>~~ee~~|—<br>~~ee~~|||
|Gate Resistance<br>~~———~~|Rg|—|0.54|—<br>~~e~~|Ω<br>~~eee~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~———~~|Qg|—|22.4|—<br>~~e~~|nC<br>~~eee~~<br>~~Pe~~|VDS= 30V, ID= 20A<br>~~ee~~<br>~~Pe~~|
|Total Gate Charge(VGS= 10V)<br>~~———~~|Qg|—|50.4|—<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|Qgs|—|9.6|—<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~<br>~~—<———~~|Qgd|—|7.8<br>~~Pe~~|—<br>~~e~~<br>~~Pe~~|||
|Turn-On Delay Time<br>~~———~~<br>~~—<———~~|tD(on)|—|7.0<br>~~Pe~~|—<br>~~e~~<br>~~Pe~~|nS<br>~~eee~~<br>~~Pe~~|VDD= 30V, VGS= 10V,<br>ID= 20A, RG= 3Ω,<br>~~ee~~<br>~~Pe~~|
|Turn-On Rise Time<br>~~———~~<br>~~—<———~~|tr|—|4.4<br>~~Pe~~|—<br>~~e~~<br>~~Pe~~|||
|Turn-Off Delay Time<br>~~—<———~~|tD(off)|—|24.4<br>~~Pe~~|—<br>~~Pe~~|||
|Turn-Off Fall Time<br>~~—<———~~|tf|—|7.0<br>~~Pe~~|—<br>~~Pe~~|||



Notes: 5. RΘJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RθJC is guaranteed by design while RΘJA is determined by the user’s board design. 

- 6 .UIS in production with L = 0.3mH, TJ = +25°C 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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30.0 30<br>VDS = 5.0V<br>| ee A<br>25.0 VGS = 10V 25<br>VGS = 4.5V<br>| ee<br>20.0 VGS = 4.0V 20 TA = 150°C<br>VGS = 3.5V TA = 125°C<br>Poo<br>15.0 15<br>TA = 85°C<br>VGS = 3.0V<br>10.0 10 T A  = 25°C<br>fo en<br>TA = -55°C<br>5.0 Za 5 fe<br>VGS = 2.5V<br>0.0 poo 0 cone<br>0.00 0.50 1.00 1.50 2.00 2.50 3.00 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>1.0 0.10<br>== 0.09 CTT<br>0.08<br>————— CECE<br>VGS = 3.0V 0.07<br>0.1<br>fj 0.06 CREE EE<br>0.05<br>SS 0.04 SEE<br>0.01 V GS = 4.5V 0.03<br>| | | PT ID = 20A | TE EE ET<br>VGS = 10V 0.02<br>0.01<br>——— PEE<br>0.001 ee 0.00 Pree ID = 3.0A<br>0 5 10 15 20 25 30 2 3 4 5 6 7 8 9 10 11 12<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.016 2<br>VGS = 4.5V<br>VGS  10= V<br>0.014 TA = 150°C ID = 10A<br>S ee eee<br>SE TA = 125°C 1.6 2<br>0.012<br>VGS = 4.5V<br>TA = 85°C ID = 5A<br>0.01<br>1.2<br>SSS De<br>0.008<br>| | TA = 25°C y,<br>0.006 T A = -55°C<br>0.8<br>See PTT<br>0.004<br>0.002 Serr 0.4 ELLLLLEL<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5 Typical On-Resistance vs.  Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A) D<br>D  I<br> I<br>)<br>Ω )<br>, DRAIN-SOURCE ON-RESISTANCE ( Ω<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R DS(ON)<br>R<br>)Ω<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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2.4<br>2.2<br>ref | ft TE<br>2<br>Su<br>1.8 NY I D = 1mA<br>1.6 oR I D = 250µAµAA<br>1.4<br>| | | NN<br>1.2<br>REEEGSS<br>1<br>0.8 AEE EER EER<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C)J, JUNCTION TEMPERATURE (°C), JUNCTION TEMPERATURE (°C)°C)C)<br>Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


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0.014 2.4<br>0.012 2.2<br>eee ref | ft TE<br>0.01 |)]! VGSI D == 4.5V 5A UK 2 Su<br>1.8 I D = 1mA<br>0.008 | 4 pa NY<br>| | EEE VGS  10= V 1.6 oR I D = 250µAµAA<br>0.006 eee I D = 10A<br>1.4<br>0.004 a = | | | NN<br>1.2<br>0.002 Topped 1 REEEGSS<br>0 ett} ttt fy 0.8 AEE EER EER<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)J, JUNCTION TEMPERATURE (°C), JUNCTION TEMPERATURE (°C)°C)C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>30 1000<br>RDS(on)<br>Limited<br>25 100<br>PW = 100µs<br>20 10<br>DC<br>15 1 PW = 10s<br>PW = 1s<br>10 ey TA = 150°C  ie TA = 85°C 0.1 T J(max)  = 150°C PW = 100ms PW = 10msPW = 1ms<br>5 T A  = 125°C T A  = 25°C 0.01 T V A GS  = 25°C  = 4.5V<br>TA = -55°C DUT on 1 * MRP BoardSingle Pulse<br>0 0.001<br>0 0.3 0.6 0.9 1.2 1.5 0.01 0.1 1 10 100<br>VSD, SOURCE-DRAIN VOLTAGE (V) -VFigure 10 SOA, Safe Operation AreaDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current<br>1<br>D = 0.9<br>D = 0.7<br>D = 0.5<br>D = 0.3<br>ma a er orm tTTT<br>0.1<br>D = 0.1<br>fn<br>sien D = 0.05  aii > ieeeeat<br>D = 0.02<br>A HR EA<br>0.01<br>D = 0.01<br>D = 0.005<br>Eo Cette EEE RθJA(t) = r(t)  *  RθJA |<br>Se D = Single Pulse a RθJA = 122 ° C/W<br>Duty Cycle, D = t1/ t2<br>0.001 Tm CUI Cn CC |<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 11 Transient Thermal Resistance<br>)Ω<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(th)<br>V<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>, SOURCE CURRENT (A) -I<br>IS<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMT6008LFG** 

: 

|**e Outline Dimensions**<br>Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.<br>**ested Pad Layout**<br>A<br>A1<br>A3<br>D<br>D2<br>E<br>E2<br>b2<br>(4x)<br>L<br>(4x)<br>L1<br>(3x)<br>b (8x)<br>e<br>Z (4x)<br>Pin 1 ID<br>1<br>4<br>8<br>5<br>~~Tocco:~~|**POWERDI**<br>~~®~~**3333-8**<br>**Dim**<br>**Min**<br>**Max **<br>**Typ**<br>**D**<br>3.25<br>3.35<br>3.30<br>**E**<br>3.25<br>3.35<br>3.30<br>**D2**<br>2.22<br>2.32<br>2.27<br>**E2**<br>1.56<br>1.66<br>1.61<br>**A**<br>0.75<br>0.85<br>0.80<br>**A1**<br>0<br>0.05<br>0.02<br>**A3**<br>−<br>−<br>0.203<br>**b**<br>0.27<br>0.37<br>0.32<br>**b2**<br>−<br>−<br>0.20<br>**L**<br>0.35<br>0.45<br>0.40<br>**L1**<br>−<br>−<br>0.39<br>**e**<br>−<br>−<br>0.65<br>**Z**<br>−<br>−<br>0.515<br>**All Dimensions in mm**|
|---|---|



## **Package Outline Dimensions** 

## Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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X<br>G<br>8 5<br>Y2 G1<br>Y1<br>Y<br>1 4<br>Y3<br>magi<br>X2 C<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|0.650|
|**G**|0.230|
|**G1**|0.420|
|**Y**|3.700|
|**Y1**|2.250|
|**Y2**|1.850|
|**Y3**|0.700|
|**X**|2.370|
|**X2**|0.420|



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**DMT6008LFG** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

6 of 6 **www.diodes.com** 

DMT6008LFG Document number: DS36680 Rev. 2 - 2 

July 2014 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMT6008LFG-13/power-mosfet-n-channel-60-v-a-5000-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmt6008lfg-13/mosfet-n-ch-60v-60a-powerdi-3333/dp/3943870RL)
---

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