# Power MOSFET, N Channel, 60 V, 80 A, 4500 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3943869/)

**URL**: https://novapart.co/products/DMT6007LFGQ-7/power-mosfet-n-channel-60-v-80-a-4500-ohm-powerdi
**SKU**: DMT6007LFGQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3860
**Stock**: 200+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 62.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 4500µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943869/)

**DMT6007LFGQ** _ 

**N-CHANNEL ENHANCEMENT MODE MOSFET** 

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## **Product Summary** 

|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>60V<br>6mΩ @ VGS= 10V<br>80A<br>8.5mΩ @ VGS= 4.5V<br>70A|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>60V<br>6mΩ @ VGS= 10V<br>80A<br>8.5mΩ @ VGS= 4.5V<br>70A|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TC = +25°C**<br>60V<br>6mΩ @ VGS= 10V<br>80A<br>8.5mΩ @ VGS= 4.5V<br>70A|
|---|---|---|
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|60V|6mΩ @ VGS= 10V|80A|
||8.5mΩ @ VGS= 4.5V|70A|



## **Features and Benefits** 

- Low RDS(ON) – Ensures On-State Losses are Minimized 

- Excellent Qgd ×RDS(ON) Product (FOM) 

- Small form factor thermally efficient package enables higher density end products 

- 100% Unclamped Inductive Switching, Test in Production – Ensures More Reliable And Robust End Application 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

- **PPAP Capable (Note 4)** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

Case: PowerDI[®] 3333-8 

   - 

- Brushless DC Motor Control 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- DC-DC Converters 

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 Load Switch<br> Moisture Sensitivity: Level 1 per J-STD-020<br> Terminal Connections Indicator: See Diagram<br><br>Solderable per MIL-STD-202, Method 208<br> Weight: 0.008 grams (Approximate)<br>PowerDI3333-8<br>S Pin 1 D<br>S<br>S<br>G<br>G<br>D<br>D<br>D<br>ISD D 8<br>S<br>Bottom View  Top View   Equivalent Circuit<br>Ordering Information (Note 5)<br>**----- End of picture text -----**<br>


- Terminal Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMT6007LFGQ-7|PowerDI3333-8|2,000/Tape & Reel|
|DMT6007LFGQ-13|PowerDI3333-8|3,000/Tape & Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

PowerDI3333-8 

SL6 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ DMT6007LFGQ Document number: DS40969  Rev. 2 - 2 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|TA= +25°C<br>TA= +70°C|ID|15<br>12|A|
||TC= +25°C<br>TC= +70°C|ID|80<br>65|A|
|Maximum Continuous BodyDiode Forward Current(Note 7)||IS|80|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)||IDM|80|A|
|Avalanche Current,L = 0.1mH||IAS|20|A|
|Avalanche Energy,L = 0.1mH||EAS|20|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|2.2|W|
|Thermal Resistance,Junction to Ambient(Note 6)||RθJA|55|°C/W|
|Total Power Dissipation(Note 7)|TC= +25°C|PD|62.5|W|
|Thermal Resistance,Junction to Case(Note 7)||RθJC|2|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



Notes: 6. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 

7. Short duration pulse test used to minimize self-heating effect. 

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**(Note 7)<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|60<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|μA<br>~~ee~~|VDS= 48V,VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±20V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS**(Note 7) <br>~~Cn~~|||||||
|Gate Threshold Voltage<br>~~Cn~~|VGS(TH)<br>|0.8<br>|—<br>|2<br>|V<br>|VDS= VGS,ID= 250μA<br>|
|Static Drain-Source On-Resistance<br>~~CnLF~~|RDS(ON)<br>~~LF~~|—<br>~~LF~~|4.5<br>~~LF~~|6<br>~~LF~~|mΩ<br>~~LF~~|VGS= 10V,ID= 20A<br>~~LF~~|
|||—<br>~~LF~~|6.5<br>~~LF~~|8.5<br>~~LF~~||VGS= 4.5V,ID= 15A<br>~~LF~~|
|Forward Transconductance<br>~~SSS~~|GFS<br>~~SSS~~|—<br>~~SSS~~|100<br>~~SSS~~|—<br>~~SSS~~|S<br>~~SSS~~|VDS= 5V,ID= 20A<br>~~SSS~~|
|Diode Forward Voltage<br>~~SSS~~|VSD<br>~~SSS~~|—<br>~~SSS~~|0.9<br>~~SSS~~|1.2<br>~~SSS~~|V<br>~~SSS~~|VGS= 0V,IS= 20A<br>~~SSS~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~eeeeeeee ee~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|2090<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee ee~~|pF<br>~~es~~<br>~~ee~~|VDS= 30V, VGS= 0V,<br>f = 1MHz<br>~~es~~<br>~~ee~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|746<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee ee~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|38.5<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee ee~~|||
|Gate Resistance<br>~~————~~|Rg<br>~~ee ~~|—<br> ~~ee ~~|0.59<br> ~~ee ~~|—<br> ~~ee ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~————~~|Qg|—|19.3|—<br>~~e~~|nC<br>~~e~~|VDS= 30V, ID= 20A<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~————~~|Qg|—|41.3|—<br>~~e~~|||
|Gate-Source Charge<br>~~————~~|Qgs|—|6.0|—<br>~~e~~|||
|Gate-Drain Charge<br>~~————~~|Qgd|—|8.8|—<br>~~e~~|||
|Turn-On DelayTime<br>~~————~~|tD(ON)|—|5.7|—<br>~~e~~|ns<br>~~e~~<br>~~ee~~|VDD= 30V, VGS= 10V,<br>ID= 20A, RG= 3Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~<br>~~|~~|tR|—|4.3|—<br>~~e~~|||
|Turn-Off DelayTime|tD(OFF)|—<br>~~ee~~|23.4<br>~~ee~~|—<br>~~ee~~|||
|Turn-Off Fall Time|tF|—<br>~~ee~~|9.7<br>~~ee~~|—<br>~~ee~~|||
|BodyDiode Reverse RecoveryTime<br>~~es~~|tRR<br>~~es~~|—<br>~~es~~<br>~~ee~~|35.4<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|ns<br>~~es~~<br>~~ee~~|IF= 20A, di/dt = 100A/μs<br>~~es~~|
|BodyDiode Reverse RecoveryCharge<br>~~es~~|QRR<br>~~es~~|—<br>~~es~~<br>~~ee~~|38.2<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|nC<br>~~es~~<br>~~ee~~||



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30.0   20<br> V VGS GS = 4.5V = 10.0V  VDS = 5.0V<br>25.0<br> VGS = 4.0V<br> VGS = 3.5V  15<br>20.0   B e |f e<br> VGS = 3.0V<br>15.0   10<br>| ee<br>125 ℃<br>10.0   85 ℃<br>ee e 5  150 ℃ |  e e<br>5.0   Za it 25 ℃<br> VGS = 2.5V  -55 ℃<br>0.0   eee) 0  a e<br>0  1  2  3  4  5  0  1  2  3  4  5<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.01  0.05<br>0.009  PfEt<br>0.008  0.04<br>0.007   VGS = 4.5V<br>0.006  S ES S 0.03  A ID = 15A  e<br>0.005   VGS = 10V<br>ID = 20A<br>0.004  Pat = 0.02  He cetee<br>0.003<br>0.002  ee ee ee ee 0.01  EL L<br>0.001<br>0  SSE 0  _-_—<br>0  5  10  15  20  25  30  0  2  4  6  8  10  12  14  16  18  20<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.010   2<br>0.009   ee VGS = 10V  ee eee 1.8  P| | | tf tf tf<br>0.008   150 ℃ 1.6  P| |  VGS = 10V, ID = 10A<br>0.007   1.4<br>125 ℃<br>0.006   a 1.2<br>85 ℃<br>0.005   1   VGS = 4.5V, ID = 15A<br>0.004   So o 25 ℃ 0.8  e e<br>0.003   fF | -55 ℃ 0.6  mT<br>0.002   0.4<br>0.001  0.000   fF BES | | | | S| 0.2 0  fFBe|To| | | | [| |<br>0  5  10  15  20  25  30  -50  -25  0  25  50  75  100  125  150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)  , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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0.014  2.5<br>0.012<br>Pt} tt yt yt 2  Py}<br>0.01  ID = 1mA<br>P| fy yf fy<br> VGS = 4.5V, ID = 15A<br>tt | tt ie 1.5  Se nn e<br>0.008<br>pp et | p tt<br>0.006  ee e 1  ID = 250μA<br>0.004<br> VGS = 10V, ID = 10A  0.5<br>0.002  eee Po eee<br>Portree LLL EL<br>0  0<br>-50  -25  0  25  50  75  100  125  150  -50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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25  10000<br>f = 1MHz<br>VGS = 0V  Ciss<br>20<br>1000<br>15  e e $= Coss<br>100<br>10  ING TA = 85 [o] C  p O<br>TA = 125 [o] C<br>TA = 25 [o] C  10   Crss<br>5  TA = 150 [o] C  Oe<br>TA = -55 [o] C<br>0  ) 1<br>/) es<br>0  0.3  0.6  0.9  1.2  1.5  0  10  20  30  40<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10  1000<br>9  RDS(ON) Limited  PW =100µs<br>8  100  PW =1ms<br>7<br>6  10  SS ee<br>5<br>4  1  PW =10ms<br>VDS = 30V, ID = 20A  PW =100ms<br>3  PW =1s<br>2  0.1  TJ(Max) = 150 ℃  TA = 25 ℃<br>1  Single Pulse DUT on 1*MRP Board  PW<br>DC<br>0  flit ttt ttl 0.01  VGS = 10V  co ot<br>0  5  10  15  20  25  30  35  40  45  0.1  1  10  100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>eer<br>D=0.7<br>SSN S a eeeeel<br>D=0.5<br>o e TTT<br>HN<br>D=0.3<br>PE ETT TTT |<br>D=0.9<br>0.1  IE D=0.1  c ATMAge t Eesl |LLIIMLTAIT E<br>en<br>D=0.05<br>F EEt AA TE AHekA tttAH<br>a a a A<br>D=0.02<br>I nc M<br>0.01  nr ee | II LENINEMELINE<br>Pe D=0.01  A tt ttt ttt<br>Ser er ill eee aii eee eel RθJA(t) = r(t) * RθJA HHH<br>SA D=0.005  CI TTT RθJA = 56 ℃ /W  LIEU<br>beet LTH<br>Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>eee TTT il<br>0.001<br>0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI3333-8** 

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A1 A3<br>PowerDI3333-8<br>A<br>Dim  Min  Max  Typ<br>Seating Plane<br>A  0.75 0.85 0.80<br>A1  0.00 0.05 0.02<br>A3   0.203<br>D<br>b 0.27  0.37  0.32<br>D2 L(4x) b2  0.15 0.25 0.20<br>1 D  3.25 3.35 3.30<br>D2  2.22  2.32  2.27<br>Pin #1 ID E  3.25 3.35 3.30<br>b2(4x) E4 E2  1.56 1.66 1.61<br>E3 0.79 0.89 0.84<br>E4  1.60 1.70 1.65<br>o F ai ====<br>E<br>e   0.65<br>E2 E3 L  0.35 0.45 0.40<br>L1    0.39<br>z    0.515<br>L1(3x) All Dimensions in mm<br>8<br>z(4x) b<br>e<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI3333-8** 

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X3<br>X2<br>8<br>Y4<br>Y1 X1<br>Y2<br>Y3<br>mt<br>Y<br>1<br>X C<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C  0.650<br>X  0.420<br>X1  0.420<br>X2  0.230<br>X3 2.370<br>Y  0.700<br>Y1  1.850<br>Y2  2.250<br>Y3  3.700<br>Y4  0.540<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMT6007LFGQ Document number: DS40969  Rev. 2 - 2 

July 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMT6007LFGQ-7/power-mosfet-n-channel-60-v-80-a-4500-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmt6007lfgq-7/mosfet-n-ch-60v-80a-powerdi-3333/dp/3943869)
---

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