# Power MOSFET, N Channel, 60 V, 80 A, 6000 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3518399RL/)

**URL**: https://novapart.co/products/DMT6007LFG-7/power-mosfet-n-channel-60-v-80-a-6000-ohm-powerdi
**SKU**: DMT6007LFG-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6170
**Stock**: 25+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2.2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.2W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0045ohm |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 6000µohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3518399RL/)

**DMT6007LFG** Co **N-CHANNEL ENHANCEMENT MODE MOSFET** 

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**Product Summary Features and Benefits ID Max**  Low RDS(ON) – Ensures On-State Losses are Minimized **BVDSS RDS(ON) Max TC = +25°C**  Excellent Qgd ×RDS(ON) Product (FOM) 6mΩ @ VGS = 10V 80A  Advanced Technology for DC-DC Converters 60V  Small form factor thermally efficient package enables higher 8.5mΩ @ VGS = 4.5V 70A density end products ~~—S——~~  Occupies just 33% of the board area by enabling smaller end products **Description**  100% UIS (Avalanche) Rated This MOSFET is designed to minimize the on-state resistance  **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** (RDS(ON)), yet maintain superior switching performance, making it  **Halogen and Antimony Free. “Green” Device (Note 3)** ideal for high-efficiency power management applications.  **Qualified to AEC-Q101 Standards for High Reliability** 

- Occupies just 33% of the board area by enabling smaller end products 

## **Applications** 

- Synchronous Rectifier 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

## **Mechanical Data** 

- Case: POWERDI[®] 3333-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminal Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.008 grams (Approximate) 

POWERDI[®] 3333-8 

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Bottom View 

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Equivalent Circuit 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMT6007LFG-7|POWERDI®3333-8|2,000/Tape & Reel|
|DMT6007LFG-13|POWERDI®3333-8|3,000/Tape & Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

POWERDI is a registered trademark of Diodes Incorporated. DMT6007LFG Document number: DS37335  Rev. 2 - 2 

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**DMT6007LFG** 

## **Marking Information** 

POWERDI[®] 3333-8 

SL6 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 ~ 53) 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= 10V|TA= +25°C<br>TA= +70°C|ID|15<br>12|A|
||TC= +25°C<br>TC= +70°C|ID|80<br>65|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)||IS|80|A|
|Pulsed Drain Current(10μspulse,dutycycle = 1%)||IDM|80|A|
|Avalanche Current,L=0.1mH||IAS|20|A|
|Avalanche Energy,L=0.1mH||EAS|20|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|2.2|W|
|Thermal Resistance,Junction to Ambient(Note 5)||RθJA|55|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|62.5|W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|2|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



Notes: 5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 

6. Short duration pulse test used to minimize self-heating effect. 

POWERDI is a registered trademark of Diodes Incorporated. DMT6007LFG Document number: DS37335  Rev. 2 - 2 

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**(Note 6)<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|60<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= 250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|μA<br>~~ee~~|VDS= 48V,VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS= ±20V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS**(Note 6) <br>~~Cn~~|||||||
|Gate Threshold Voltage<br>~~Cn~~|VGS(TH)<br>|0.8<br>|—<br>|2<br>|V<br>|VDS= VGS,ID= 250μA<br>|
|Static Drain-Source On-Resistance<br>~~CnLF~~|RDS(ON)<br>~~LF~~|—<br>~~LF~~|4.5<br>~~LF~~|6<br>~~LF~~|mΩ<br>~~LF~~|VGS= 10V,ID= 20A<br>~~LF~~|
|||—<br>~~LF~~|6.5<br>~~LF~~|8.5<br>~~LF~~||VGS= 4.5V,ID= 15A<br>~~LF~~|
|Forward Transconductance<br>~~SSS~~|GFS<br>~~SSS~~|—<br>~~SSS~~|100<br>~~SSS~~|—<br>~~SSS~~|S<br>~~SSS~~|VDS= 5V,ID= 20A<br>~~SSS~~|
|Diode Forward Voltage<br>~~SSS~~|VSD<br>~~SSS~~|—<br>~~SSS~~|0.9<br>~~SSS~~|1.2<br>~~SSS~~|V<br>~~SSS~~|VGS= 0V,IS= 20A<br>~~SSS~~|
|**DYNAMIC CHARACTERISTICS**(Note 7)<br>~~eeeeeeee ee~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|2090<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee ee~~|pF<br>~~es~~<br>~~ee~~|VDS= 30V, VGS= 0V,<br>f = 1MHz<br>~~es~~<br>~~ee~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|746<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee ee~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|38.5<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee ee~~|||
|Gate Resistance<br>~~————~~|Rg<br>~~ee ~~|—<br> ~~ee ~~|0.59<br> ~~ee ~~|—<br> ~~ee ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~————~~|Qg|—|19.3|—<br>~~e~~|nC<br>~~e~~|VDS= 30V, ID= 20A<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~————~~|Qg|—|41.3|—<br>~~e~~|||
|Gate-Source Charge<br>~~————~~|Qgs|—|6.0|—<br>~~e~~|||
|Gate-Drain Charge<br>~~————~~|Qgd|—|8.8|—<br>~~e~~|||
|Turn-On DelayTime<br>~~————~~|tD(ON)|—|5.7|—<br>~~e~~|ns<br>~~e~~<br>~~ee~~|VDD= 30V, VGS= 10V,<br>ID= 20A, RG= 3Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~<br>~~|~~|tR|—|4.3|—<br>~~e~~|||
|Turn-Off DelayTime|tD(OFF)|—<br>~~ee~~|23.4<br>~~ee~~|—<br>~~ee~~|||
|Turn-Off Fall Time|tF|—<br>~~ee~~|9.7<br>~~ee~~|—<br>~~ee~~|||
|BodyDiode Reverse RecoveryTime<br>~~es~~|tRR<br>~~es~~|—<br>~~es~~<br>~~ee~~|35.4<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|ns<br>~~es~~<br>~~ee~~|IF= 20A, di/dt = 100A/μs<br>~~es~~|
|BodyDiode Reverse RecoveryCharge<br>~~es~~|QRR<br>~~es~~|—<br>~~es~~<br>~~ee~~|38.2<br>~~es~~<br>~~ee~~|—<br>~~es~~<br>~~ee~~|nC<br>~~es~~<br>~~ee~~||



POWERDI is a registered trademark of Diodes Incorporated. DMT6007LFG Document number: DS37335  Rev. 2 - 2 

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30.0  20<br>VVGS GS = 4.5V= 10.0V VDS = 5.0V<br>25.0<br>VGS = 4.0V<br>VGS = 3.5V 15<br>20.0  B e |f e<br>VGS = 3.0V<br>15.0  10<br>| ee eee |e<br>125 ℃<br>10.0  _—— H 85 ℃<br>5 150 ℃<br>25 ℃<br>5.0<br>VGS = 2.5V -55 ℃<br>0.0  |-——eee) 0 a a e<br>0 1 2 3 4 5 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.01 0.05<br>0.009<br>0.008 FISESE = 0.04 EEL LLL<br>0.007 VGS = 4.5V<br>0.006 0.03 ID = 15A<br>0.005 VGS = 10V<br>ID = 20A<br>0.004 — — — 0.02 a e<br>0.003<br>0.002 0.01<br>0.001<br>0 SS 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.010  2<br>0.009  VGS = 10V 1.8 Pot | ty<br>0.008  150 ℃ 1.6 VGS = 10V, ID = 10A<br>0.007  1.4<br>125 ℃<br>0.006  1.2<br>85 ℃<br>0.005  1 VGS = 4.5V, ID = 15A<br>0.004  25 ℃ 0.8<br>0.003  SS S -55 ℃ 0.6 e e<br>0.002  ee 0.4 TTT TEE<br>0.001  0.2<br>0.000  SESE 0 SESE<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. DMT6007LFG Document number: DS37335  Rev. 2 - 2 

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0.014 2.5<br>0.012<br>Pt te et 2 Py ty) | ty<br>0.01 ID = 1mA<br>VGS = 4.5V, ID = 15A<br>P| yt | | ee 1.5 S e e<br>0.008<br>eT : tt<br>0.006 ae aaa 1 |] ID = 250μA aw<br>0.004<br>VGS = 10V, ID = 10A 0.5<br>0.002 peea res<br>0 TCE ECE 0 LL ELLE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>25 10000<br>f=1MHz<br>VGS = 0V Ciss<br>20<br>1000<br>15 <= Coss<br>100<br>10 HY TA = 85 [o] C r r<br>TA = 125 [o] C<br>TA = 25 [o] C 10  Crss<br>5 TA = 150 [o] C<br>TA = -55 [o] C<br>0 ) W,m 1  eenee ee ee<br>0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 1000<br>9 RDS(ON) Limited PW =100µs<br>8 100 PW =1ms<br>7<br>6 10 SS ee<br>5<br>4 1 PW =10ms<br>VDS = 30V, ID = 20A PW =100ms<br>3 PW =1s<br>2 0.1 TJ(Max) = 150 ℃  TA = 25 ℃<br>1 Single PulseDUT on 1*MRP Board PW<br>DC<br>VGS= 10V<br>0 Vit | ttt dt ft 0.01 Ectttt mull<br>0 5 10 15 20 25 30 35 40 45 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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[| 

**DMT6007LFG** 

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1<br>D=0.7<br>SSN S a eeeeel<br>D=0.5<br>o e TTT<br>HN<br>D=0.3<br>PE ETT TTT |<br>D=0.9<br>0.1 Ih D=0.1 c ATMaceA Eeslee|LLIIMLTAIT E<br>en<br>D=0.05<br>F EEt AA TE AHekA tttAH<br>a a a A<br>D=0.02<br>I nc M<br>0.01 nr ee | II LENINEMELINE<br>Pe D=0.01 A tt ttt ttt<br>Ser er ill eee aii eee eel RθJA(t) = r(t) * RθJA HHH<br>SA D=0.005 CI TTT RθJA = 56 ℃ /W LIEU<br>beet LTH<br>Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMT6007LFG** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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POWERDI [®] 3333-8<br>**----- End of picture text -----**<br>


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A1 A3<br>A POWERDI [®] 3333-8<br>Seating Plane Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>A1  0.00 0.05 0.02<br>D A3   0.203<br>b  0.27  0.37  0.32<br>L(4x)<br>D2 b2    0.20<br>1 D  3.25 3.35 3.30<br>D2  2.22  2.32  2.27<br>E  3.25 3.35 3.30<br>Pin #1 ID E2  1.56 1.66 1.61<br>e   0.65<br>e1  0.79 0.89 0.84<br>E b2(4x)<br>L  0.35 0.45 0.40<br>E2 e1 L1    0.39<br>z    0.515<br>All Dimensions in mm<br>8<br>z(4x) b<br>e L1(3x)<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**POWERDI[®] 3333-8** 

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X3<br>X2<br>8<br>Dimensions Value (in mm)<br>C 0.650<br>Y1 X1 X  0.420<br>Y2<br>X1  0.420<br>X2  0.230<br>X3  2.370<br>Y3 Y  0.700<br>Y1  1.850<br>ibaill Y2  2.250<br>Y3  3.700<br>Y<br>1<br>000. X C<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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> Novapart is a B2B electronic component broker that sources across 500+ verified
> distributors in Europe and Asia. Unlike standard online stores, Novapart
> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.
