# Power MOSFET, N Channel, 60 V, 125 A, 3500 µohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3943867/)

**URL**: https://novapart.co/products/DMT6005LPS-13/power-mosfet-n-channel-60-v-125-a-3500-ohm-powerdi
**SKU**: DMT6005LPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3960
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 125A |
| Drain Source On State Resistance | 3500µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943867/)

**DMT6005LPS** ~~-~~ 

**60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

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## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID **<br>**TC = +25°C**|
|---|---|---|
|60V|4.5mΩ@VGS= 10V|125A|
||6.5mΩ@VGS= 4.5V|108A|



## **Features** 

- 100% Unclamped Inductive Switching (UIS) Test in Production  – Ensures More Reliable and Robust End Application 

- Low RDS(ON) – Minimizes Power Losses 

- Low QG – Minimizes Switching Losses 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- High Frequency Switching 

- Synchronized Rectification 

- DC-DC Converters 

- Case: PowerDI[®] 5060-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

 Weight: 0.097 grams (Approximate) 

Site1: 

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PowerDI5060-8<br>S D<br>Pin1<br>S D<br>S D<br>G D<br>oF ©<br>Top View<br>Top View  Bottom View  Internal Schematic  Pin Configuration<br>Site2:<br>PowerDI5060-8 (SWP) (Type UX)<br>S D<br>Pin1  S D<br>S D<br>G D<br>ee ©<br>Top View<br>Top View  Bottom View  Internal Schematic  Pin Configuration<br>Notes:  1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.<br>2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and<br> Lead-free.<br>           3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and<br>               <1000ppm antimony compounds.<br>**----- End of picture text -----**<br>


_PowerDI is a registered trademark of Diodes Incorporated._ 

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**DMT6005LPS** 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMT6005LPS-13|PowerDI5060-8|2,500/Tape &Reel|
|DMT6005LPS-13|PowerDI5060-8(SWP) (Type UX)|2,500/Tape & Reel|



Note: 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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D D D D D D D D<br>" 7<br>T6005LS T6005LS<br>YY WW YY WW<br>|" / -<br>S S S G S S S G<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking T6005LS = Product Type Marking Code YYWW or YYWW = Date Code Marking YY or YY = Year (ex: 21 = 2021) WW = Week (01 to 53) 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 5)|TA= +25°C<br>TA= +70°C|ID|18.4<br>14.7|A|
|Continuous Drain Current (Note 6)|TC= +25°C<br>TC= +70°C|ID|125<br>100|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)||IS|125|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)||IDM|500|A|
|Avalanche Current,L = 1mH||IAS|14.8|A|
|Avalanche Energy,L = 1mH||EAS|98|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**||||
|---|---|---|---|---|
|**Characteristic**||**Symbol **|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|2.6|W|
|Thermal Resistance,Junction to Ambient(Note 5)||RθJA|47|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|125|W|
|Thermal Resistance,Junction to Case(Note 6)||RθJC|1|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

   6. Thermal resistance from junction to soldering point (on the exposed drain pad). 

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**DMT6005LPS** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~_~~|**Symbol**<br>|**Min**<br>|**Typ **<br>|**Max**<br>|**Unit**<br>|**Test Condition**<br>|
|**OFF CHARACTERISTICS**(Note 7) <br>~~_~~|||||||
|Drain-Source Breakdown Voltage<br>~~_~~|BVDSS<br>|60<br>|—<br>|—<br>|V<br>|VGS= 0V,ID= 1mA<br>|
|Zero Gate Voltage Drain Current<br>~~_oS~~|IDSS<br>~~oS~~|—<br>~~oS~~|—<br>~~oS~~|1<br>~~oS~~|μA<br>~~oS~~|VDS= 48V,VGS= 0V<br>~~oS~~|
|Gate-Source Leakage<br>~~oS~~|IGSS<br>~~oS~~|—<br>~~oS~~|—<br>~~oS~~|±100<br>~~oS~~|nA<br>~~oS~~|VGS= ±20V,VDS= 0V<br>~~oS~~|
|**ON CHARACTERISTICS**(Note 7) <br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1<br>~~ee~~|—<br>~~ee~~|3<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~——————————~~|RDS(ON)<br>~~——————————~~|—<br>~~——————————~~|3.5<br>~~——————————~~|4.5<br>~~——————————~~|mΩ<br>~~——————————~~<br>~~(O(n~~|VGS= 10V,ID= 50A<br>~~——————————~~|
|||—<br>~~——————————~~|5<br>~~——————————~~<br>~~RD~~|6.5<br>~~——————————~~<br>~~(O(n~~||VGS= 4.5V,ID= 12.5A<br>~~——————————~~<br>~~(O(n~~|
|Diode Forward Voltage<br>~~DG~~|VSD<br>~~DG~~|—<br>~~DG~~|0.9<br>~~DG~~<br>~~RD~~|—<br>~~DG~~<br>~~(O(n~~|V<br>~~DG~~<br>~~(O(n~~|VGS= 0V,IS= 50A<br>~~DG~~<br>~~(O(n~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~RD (O(n~~|||||||
|Input Capacitance<br>~~a~~|Ciss<br>~~a~~|—<br>~~a~~|2,962<br>~~a~~|—<br>~~a~~|pF<br>~~a~~|VDS= 30V, VGS= 0V,<br>f = 1MHz<br>~~a~~|
|Output Capacitance<br>~~a~~|Coss<br>~~a~~|—<br>~~a~~|965.2<br>~~a~~|—<br>~~a~~|||
|Reverse Transfer Capacitance<br>~~a~~|Crss<br>~~a~~|—<br>~~a~~|59.8<br>~~a~~|—<br>~~a~~|||
|Gate Resistance<br>~~a~~<br>~~—<—<——~~|Rg<br>~~a~~|—<br>~~a~~|0.66<br>~~a~~|—<br>~~a~~<br>~~e~~|Ω<br>~~a~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~a~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~a~~<br>~~—<—<——~~|Qg<br>~~a~~|—<br>~~a~~|47.1<br>~~a~~|—<br>~~a~~<br>~~e~~|nC<br>~~a~~<br>~~e~~|VDD= 30V, ID= 50A<br>~~a~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~—<—<——~~|Qg|—|23.1|—<br>~~e~~|||
|Gate-Source Charge<br>~~—<—<——~~|Qgs|—|10.2|—<br>~~e~~|||
|Gate-Drain Charge<br>~~—<—<——~~|Qgd|—|12.5|—<br>~~e~~|||
|Turn-On DelayTime<br>~~—<—<——~~<br>~~a~~<br>~~CO~~|tD(ON)<br>~~a~~<br>|—<br>~~a~~<br>|8.3<br>~~a~~<br>|—<br>~~e~~<br>~~a~~<br>|ns<br>~~e~~<br>~~Ne~~|VDD= 30V, VGS= 10V,<br>ID= 30A, RG= 3.3Ω<br>~~ee~~<br>~~Ne~~|
|Turn-On Rise Time<br>~~CO~~|tR<br>|—<br>|9.4<br>|—<br>|||
|Turn-Off DelayTime<br>~~CO~~|tD(OFF)<br>|—<br>|22<br>|—<br>|||
|Turn-Off Fall Time<br>~~NN Ne~~|tF<br>~~Ne~~|—<br>~~Ne~~|8.9<br>~~Ne~~|—<br>~~Ne~~|||
|BodyDiode Reverse RecoveryTime<br>~~NN Ne~~|tRR<br>~~Ne~~|—<br>~~Ne~~|40.4<br>~~Ne~~|—<br>~~Ne~~|ns<br>~~Ne~~|IF= 30A, di/dt = 100A/μs<br>~~Ne~~|
|BodyDiode Reverse RecoveryCharge<br>~~NN Ne~~|QRR<br>~~Ne~~|—<br>~~Ne~~|49.7<br>~~Ne~~|—<br>~~Ne~~|nC<br>~~Ne~~||



8. Guaranteed by design. Not subject to product testing. 

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50 100<br>VGS = 10V<br>45 90 V DS  = 2.0V<br>VGS = 6V<br>ee<br>40 VGS = 4.5V 80<br>35 a) V GS  = 4V Ff fT 70 ee a<br>30 V GS  = 3.5V 60<br>25 tosepo VGS = 3V 50 ee e T J  = 150°C TJ ee  = 25°C<br>20 40 TJ = 125 ° C<br>15 poe 30 | T J  = 85°C , TJ = -55°C<br>VGS = 2.8V<br>10 foAn 20 oe| / a<br>5 V GS  = 2.6V 10<br>poo | a<br>0 y———__ 0 ee Zee// a<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristic Figure 2 Typical Transfer Characteristics<br>8 50<br>ID = 50A<br>7<br>40<br>So<br>6<br>VGS = 4.5V<br>5<br>30<br>4 PE VGS = 10V TLL ID = 12.5A ELE<br>Se 20 to EEE<br>3<br>2<br>10<br>PS<br>1<br>0 a 0 SHH<br>0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Drain-Source On-Resistance<br>Drain Current and Gate Voltage  vs. Gate-Source Voltage<br>0.008 2<br>VGS = 10V<br>0.007 ee TJ = 150°C 1.8 TLELELLL<br>0.006 ee TJ = 125 ° C 1.6 ttt VIGSD = 50A = 10V<br>TJ = 85°C<br>0.005 Tt 1.4 TTT Es<br>VGS = 4.5V<br>0.004 TJ = 25°C 1.2 ID = 12.5A<br>jj | tf Cr<br>0.003 TJ = -55 ° C<br>1<br>0.002 Se San 4G<br>0.8<br>0.001 SERRE 0.6 REE<br>0<br>0 jt 5 tt 10 15 20 tt 25 30 0.4 PEELE<br>Figure 5 Typical On-Resistance vs. I D, DRAIN CURRENT (A) -50 -25TJ, JUNCTION TEMPERATURE ( C)0 25 50 75 100  125 150<br>Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>D<br>, DRAIN CURRENT (A)<br> I<br>, DRAIN CURRENT (A)<br>D<br> I<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>**----- End of picture text -----**<br>


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0.012 2.5<br>0.01<br>2<br>VGS = 4.5V<br>0.008 I D  = 12.5A A | ID = 1mA<br>-ELL. L eee<br>1.5<br>0.006 SEE| — Ne ID = 250µA<br>1<br>0.004 eeea VGS  = 10V oR~<br>ID = 50A<br>0.5<br>0.002 a ><br>0 Spc) 0 CECE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>T , JUNCTION TEMPERATURE (J C) TJ, JUNCTION TEMPERATURE (C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Junction Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>150 10000<br>f = 1MHz<br>Ciss<br>= =<br>een =<br>120<br>1000<br>90 TT TJ = 150 ° C S EE Coss S<br>} SS SSS=<br>TJ = 125°C<br>// a ee<br>60 T J  = 85°C 100<br>HI TJ = 25°C t n Crss “<br>30 Oe ——<br>TJ = -55°C<br>yy, / se ee<br>10<br>0 OWT 0 ee 5 10 15 20 25 30 35 40<br>0 0.3 0.6 0.9 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 1000<br>R<br>9 DS(ON)<br>Limited<br>8<br>100<br>7<br>6<br>PW = 1µs<br>5 10 PW = 10µs<br>4 PW = 100µs<br>VDS = 30V, ID = 50A PW = 1ms<br>3 TJ(Max) = 150 ℃ PW = 10ms<br>1 TC = 25 ℃<br>2 FEE EEE Single Pulse amen PW = 100ms NO II)<br>DUT on Infinite<br>1 PW = DC<br>Heatsink<br>0 0.1 VGS = 10V ee ill<br>0 5 10 15 20 25 30 35 40 45 50<br>0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>Figure 11 Gate Charge<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(th)<br>V<br>, SOURCE CURRENT (A)<br>IS<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMT6005LPS** ~~I~~ 

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1<br>SSS SSS<br>ssSS D = 0.9 SeeSEE Ll<br>D = 0.5 D = 0.7<br>e e cc<br>D = 0.3 PTI Tae ITE TTT TT<br>0.1 0 72 A<br>Te<br>D = 0.1<br>PE itt<br>ee| ie<br>D = 0.05<br>Cue27 A<br>SATS A<br>0.01 Oe AAI D = 0.02 ANEGL GMMANNTIOUUTIOMONUINIORBQNI<br>a ee ae a OO OR OO OO OO OO OG GO<br>tS See Se<br>D = 0.01<br>Sea|| | ANT S PPTTa<br>D = 0.005<br>7 1 RθJC (t) = r(t) * RθJC<br>D = Single Pulse RθJC = 1℃/W<br>Duty Cycle, D = t1/t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMT6005LPS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **Site1:** 

**PowerDI5060-8** 

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PowerDI5060-8<br>D Dim  Min  Max  Typ<br>D1 Detail A A  0.90 1.10 1.00<br>0 ( 4X) A1  0.00  0.05  <br>b 0.33 0.51  0.41<br>c b2  0.200 0.350 0.273<br>A1 b3 0.40 0.80 0.60<br>c 0.230 0.330 0.277<br>E 1 E<br>D  5.15 BSC<br>e D1  4.70 5.10 4.90<br>a = ==== D2  3.70 4.10 3.90<br>1 0 1 ( 4X) D3 3.90 4.30 4.10<br>E  6.15 BSC<br>E1  5.60 6.00 5.80<br>b ( 8X) e/2 E2  3.28 3.68 3.48<br>1 E3 3.99 4.39 4.19<br>L b2 ( 4X) e 1.27 BSC<br>D3 K G 0.51  0.71  0.61<br>ree! ————— K  0.51  <br>A E 3 E 2 D2 b3 ( 4X) L1 L  00.1.5001  00.2.71 00 00.17.61 5<br>M<br>M  3.235 4.035 3.635<br>M1 M1  1.00 1.40 1.21<br>Detail A<br>Θ  10°  12°  11°<br>Et G L1 ESS Θ1  6°  8°  7°<br>All Dimensions in mm<br>Site2:<br>PowerDI5060-8 (SWP) (Type UX)<br>D<br>D1 PowerDI5060-8 (SWP)<br>(Type UX)<br>Dim  Min  Max  Typ<br>A  0.90 1.10 1.00<br>== A1  0 0.05 --<br>b 0.30 0.50 0.41<br>in ; E1 E A1 | b2  0.20 0.35 0.25<br>1.900 1.400 c S eating Plane b4  0.25REF<br>c 0.230 0.330 0.277<br>e D  5.15 BSC<br>D1  4.70 5.10 4.90<br>1 D2  3.56 3.96 3.76<br>D2a 3.78 4.18 3.98<br>Ø1.000 Depth 0.07±0.030 E  6.40 BSC<br>DETAIL A<br>b( 8x) E1  5.60 6.00 5.80<br>e/2 E2  3.46 3.86 3.66<br>1 E2a 4.195 4.595 4.395<br>L<br>e 1.27BSC<br>D2a k k  1.05 --  --<br>L  0.635 0.835 0.735<br>La 0.635 0.835 0.735<br>L1  0.200 0.400 0.300<br>A<br>E2 D2 L4 L1a 0.050REF<br>M L4  0.025 0.225 0.125<br>M  3.205 4.005 3.605<br>DE TAIL A θ  10°  12°  11°<br>La Ret) =S6 ES θ1  6°  8°  7°<br>All Dimensions in mm<br>ie b4( J 8x) L1 =<br>DMT6005LPS 7 of 9<br>Document number: DS38867 Rev. 4 - 2 www.diodes.com<br>0( 4x)<br>4x)<br>01(<br>**----- End of picture text -----**<br>


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**DMT6005LPS** 

## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. **Site1:** 

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PowerDI5060-8<br>X4 Dimensions  Value (in mm)<br>Y2 C  1.270<br>X3<br>G  0.660<br>Y3 Y1 G1  0.820<br>X  0.610<br>X1  4.100<br>X2  0.755<br>X3  4.420<br>Y5 X2 X4  5.610<br>Y4 X1 Y  1.270<br>Y7 Y1  0.600<br>Y2  1.020<br>a Y3  0.295<br>C G1 Y4  1.825<br>Y6 Y5  3.810<br>Y6  0.180<br>Y7  6.610<br>Y( 4x)<br>aii X G<br>**----- End of picture text -----**<br>


## **Site2:** 

**PowerDI5060-8 (SWP) (Type UX)** 

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Y1<br>Y2<br>Y3<br>G1 X1<br>if<br>Y C X ( 8x)<br>00 G i<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|1.270|
|**G**|0.660|
|**G1**|0.820|
|**X**|0.610|
|**X1**|4.100|
|**X2**|4.420|
|**Y**|1.270|
|**Y1**|1.020|
|**Y2**|3.810|
|**Y3**|6.610|



8 of 9 **www.diodes.com** 

DMT6005LPS Document number: DS38867 Rev. 4 - 2 

August 2021 © Diodes Incorporated 

**DMT6005LPS** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

9 of 9 **www.diodes.com** 

DMT6005LPS Document number: DS38867 Rev. 4 - 2 

August 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMT6005LPS-13/power-mosfet-n-channel-60-v-125-a-3500-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmt6005lps-13/mosfet-n-ch-60v-125a-powerdi-5060/dp/3943867)
---

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