# Power MOSFET, N Channel, 40 V, 90 A, 2500 µohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3943864RL/)

**URL**: https://novapart.co/products/DMT4004LPS-13/power-mosfet-n-channel-40-v-90-a-2500-ohm-powerdi
**SKU**: DMT4004LPS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3980
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 138W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 90A |
| Drain Source On State Resistance | 2500µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943864RL/)

**DMT4004LPS** [7 **40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI** 

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## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID **<br>**TC = +25°C**|
|40V|2.5mΩ @ VGS= 10V|90A|
||4mΩ @ VGS= 4.5V|90A|



## **Features** 

- 100% Unclamped Inductive Switching  – ensures more reliable and robust end application 

- Low RDS(ON) – minimizes power losses 

- Low Qg – minimizes switching losses 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Engine Management Systems 

- Body Control Electronics 

- DC-DC Converters 

## **Mechanical Data** 

- Case: PowerDI5060-8 

- Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

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PowerDI5060-8<br>Pin1<br>Top View  Bottom View<br>**----- End of picture text -----**<br>


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S D<br>S D<br>S D<br>G D<br>Internal Schematic  Top View<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMT4004LPS-13|PowerDI5060-8|2,500 / Tape & Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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D D D D<br>T4004LS<br>YY WW<br>S S S G<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking 

- T4004LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) 

POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587  Rev.3 - 2 

1 of 6 **www.diodes.com** 

May 2016 © Diodes Incorporated 

**DMT4004LPS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|40|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 5)|TA= +25°C<br>TA= +70°C|ID|26<br>21|A|
|Continuous Drain Current (Note 6)|TC= +25°C|ID|90|A|
||TC= +70°C<br>(Note 8)||90||
|Maximum Continuous BodyDiode Forward Current(Note 6)||IS|70|A|
|Pulsed Drain Current(10s Pulse,DutyCycle = 1%)||IDM|100|A|
|Avalanche Current,L=0.2mH||IAS|33.3|A|
|Avalanche Energy,L=0.2mH||EAS|110|mJ|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|40|—|—|V|VGS= 0V,ID= 1mA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|μA|VDS= 32V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **|||||||
|Gate Threshold Voltage<br>~~Ee~~|VGS(TH)<br>~~Ee~~|1<br>~~Ee~~|—<br>~~Ee~~|3<br>~~Ee~~|V<br>~~Ee~~|VDS= VGS,ID= 250μA<br>~~Ee~~|
|Static Drain-Source On-Resistance<br>~~Ee~~|RDS(ON)<br>~~Ee~~|—<br>~~Ee~~|—<br>~~Ee~~|2.5<br>~~Ee~~|mΩ<br>~~Ee~~|VGS= 10V,ID= 50A<br>~~Ee~~|
|||—<br>~~Ee~~|—<br>~~Ee~~|4<br>~~Ee~~||VGS= 4.5V,ID= 50A<br>~~Ee~~|
|Diode Forward Voltage<br>~~Ee~~|VSD<br>~~Ee~~<br>~~ee~~|—<br>~~Ee~~<br>~~ee~~|0.9<br>~~Ee~~<br>~~ee~~|1.2<br>~~Ee~~<br>~~ee~~|V<br>~~Ee~~|VGS= 0V,IS= 50A<br>~~Ee~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~——~~<br>~~ee~~|||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~——~~<br>~~ee~~|—<br>~~——~~<br>~~ee~~|4508<br>~~——~~<br>~~ee~~|—<br>~~——~~<br>~~ee~~|pF<br>~~——~~|VDS= 20V, VGS= 0V,<br>f = 1MHz<br>~~——~~|
|Output Capacitance<br>~~——~~|Coss<br>~~——~~<br>~~ee~~|—<br>~~——~~<br>~~ee~~|1648<br>~~——~~<br>~~ee~~|—<br>~~——~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~——~~<br>~~ee~~|—<br>~~——~~<br>~~ee~~|104<br>~~——~~<br>~~ee~~|—<br>~~——~~<br>~~ee~~|||
|Gate resistance|Rg<br>~~ee~~|—<br>~~ee~~|0.7<br>~~ee~~|—<br>~~ee~~|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= 4.5V)|Qg|—|34.6|—|nC|VDD= 20V, ID= 30A|
|Total Gate Charge(VGS= 10V)|Qg|—|82.2|—|nC||
|Gate-Source Charge|Qgs|—|9.9|—|||
|Gate-Drain Charge|Qgd|—|11.2|—|||
|Turn-On DelayTime|tD(ON)|—|5.9|—|ns|VDD= 20V, VGS= 10V,<br>ID= 30A, RG= 1.6Ω|
|Turn-On Rise Time|tR|—|13.3|—|||
|Turn-Off DelayTime|tD(OFF)|—|25.9|—|||
|Turn-Off Fall Time|tF|—|7.9|—|||
|BodyDiode Reverse RecoveryTime|tRR|—|48.4|—|ns|IF= 50A, di/dt = 100A/μs|
|BodyDiode Reverse RecoveryCharge|QRR|—|72.4|—|nC||



- Notes: 5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady state. 

6. Thermal resistance from junction to soldering point (on the exposed drain pad). 

7 .Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587  Rev.3 - 2 

2 of 6 **www.diodes.com** 

May 2016 © Diodes Incorporated 

**DMT4004LPS** 

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150.0<br>VGS= VGS=3.5V<br>10.0V<br>120.0  5.0VVGS= VGS=4.0V<br>VGS=3.0V<br>90.0<br>VGS=4.5V<br>60.0<br>/ Tc<br>30.0<br>VGS=2.5V<br>-— —s<br>VGS=2.3V<br>0.0<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>3.40<br>3.20<br>VGS=4.5V<br>3.00  [TT tf t<br>2.80  —<br>2.60<br>2.40  Saaeeee<br>VGS=10.0V<br>2.20  C oo<br>2.00  PEE<br>10 30 50 70 90 110 130 150<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance  vs. Drain Current and<br>Gate Voltage<br>0.005<br>VGS=10V<br>0.004 150 ℃<br>0.003 125 ℃<br>85 ℃<br>0.002<br>25 ℃<br>-55 ℃<br>0.001 PTE T T<br>0 LEE EE<br>10 30 50 70 90 110 130 150<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance  vs. Drain Current and<br>Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (mΩ)<br>DS(ON)<br>R<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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30<br>VDS= 5.0V<br>25<br>20 125 ℃<br>15<br>85 ℃<br>10<br>e e 150 ℃ | 25 ℃<br>5<br>isp<br>-55 ℃<br>0<br>0 1 2 3 4<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>15<br>12<br>HEEL<br>9<br>MEET<br>6<br>HEEL<br>ID=50A<br>3<br>Peco<br>0 ||<br>2 4 6 8 10 12 14 16 18 20<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.2<br>2<br>1.8<br>1.6<br>1.4 VGS=4.5V, ID=50A<br>1.2<br>1 VGS=10V, ID=50A<br>0.8 pam<br>0.6<br>PES<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587  Rev.3 - 2 

3 of 6 **www.diodes.com** 

May 2016 © Diodes Incorporated 

**DMT4004LPS** 

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0.005 2<br>0.004<br>Te VGS=4.5V, ID=50A 1.5 TT ID=1mA<br>0.003<br>Pet e 1 P R<br>0.002 s aa VGS=10V, ID=50A Ne ID=250μA<br>— 0.5 aS<br>0.001 T TL SS<br>0 0<br>TOOT LLLLAL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs.<br>Temperature<br>150 10000<br>Ciss f=1MHz<br>120 VGS=0V, TA=150 ℃ Coss<br>1000<br>9060 f VGS=0V, TA=125 ℃ Ih o VGS=0V, TA=85 ℃ 100  ====————— SS= Crss ee<br>' P P A<br>30 VGS=0V, TA=25 ℃<br>VGS=0V, TA=-55 ℃<br>0 ZZ 10  | | | | | dt | |<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE<br>GATE THRESHOLD VOLTAGE (V)<br>DS(ON)<br>R GS(TH),<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)CJ<br>**----- End of picture text -----**<br>


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10<br>8<br>6<br>4<br>VDS=20V, ID=30A<br>2<br>0<br>0 10 20 30 40 50 60 70 80<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 11. Gate Charge<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1000<br>RDS(ON) Limited PW=10μs  PW=100μs<br>100<br>PW=<br>PW=1ms  1μs<br>10<br>PW=10ms<br>PW=100ms<br>1 TJ(MAX)=150 ℃ PW=1s<br>TC=25 ℃<br>Single Pulse<br>DUT on infinite heatsink<br>VGS=10V<br>0.1<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. 

4 of 6 **www.diodes.com** 

DMT4004LPS Document number: DS37587  Rev.3 - 2 

May 2016 

© Diodes Incorporated 

**DMT4004LPS** 

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1<br>D=0.5<br>EIN<br>D=0.9<br>D=0.3<br>D=0.7<br>n e a e<br>0.1 ZA LNAI<br>D=0.1<br>D=0.05<br>Fue CONICAL CECE<br>a D=0.02 ng<br>0.01 ee a aE a eA |<br>D=0.01<br>D=0.005<br>Fan ATH CCHEMELLIO RθJC(t)=r(t) * RθJC<br>RθJC=0.9 ℃ /W<br>D=Single Pulse Duty Cycle, D=t1 /  t2<br>0.001 ameSsoul ELITME Ne LTTE ET LMI |<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI5060-8<br>D<br>D1 Detail A _ ee Dim  Min  ee Max  ee T ee yp<br>A  0.90 1.10 1.00<br>| —_ ; 0 : (4X) ee A1  0. ee 00 0.05 -<br>= p i o al ee ee ee ee<br>b  0.33 0.51  0.41<br>c A1 b2  0.200 0.350 0.273<br>b3  0.40 0.80 0.60<br>+ E1 E ee c 0.2 ee 30 0. ee 330 0.277<br>D  5.15 BSC<br>e<br>D1  4.70 5.10 4.90<br>; ee D2  3 ee .70 4.1 ee 0 3.90<br>lo 1 fy, P KL |} 0 1 (4X) oT D3  3.90 4.30 4.10<br>E  6.15 BSC<br>ee E1  5. ee 60 6. ee 00 5 ee .80<br>b (8X) np e/2 ee E2  3 ee .28 3 ee .68 3.48<br>1 E3  3.99 4.39 4.19<br>L b2 (4X) e  1.27 BSC<br>D3 K G  0.51  0.71  0.61<br>K  0.51  -  -<br>L  0.51  0.71  0.61<br>A E3 UP E2 i D2 b3 (4X) See L1  0.100 0.200 0.175<br>ee ja M a M  3.235 4.035 3.635<br>M1 M1  1.00 1.40 1.21<br>Detail A Rana ee θ  10º  12º  11º<br>G L1 ee θ1  6 ee º  8 ee º  7º<br>All Dimensions in mm<br>**----- End of picture text -----**<br>


POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587  Rev.3 - 2 

5 of 6 **www.diodes.com** 

May 2016 © Diodes Incorporated 

**DMT4004LPS** 

## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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X4 Dimensions  Value (in mm)<br>X3 Y2 C  1.270<br>G  0.660<br>Y3 Y1 G1  0.820<br>X  0.610<br>ear a<br>X1  4.100<br>X2  0.755<br>X2 X3  4.420<br>Y5<br>Y4 X1 X4  5.610<br>Y7 Y  1.270<br>Y1  0.600<br>Y2  1.020<br>C G1 Y3  0.295<br>Y6 Y4  1.825<br>Y5  3.810<br>rr Y6  0.180<br>Y(4x) Y7  6.610<br>OO X O O G '<br>IMPORTANT NOTICE<br>DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,<br>INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE<br>(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).<br>**----- End of picture text -----**<br>


Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

## **www.diodes.com** 

POWERDI is a registered trademark of Diodes Incorporated. DMT4004LPS Document number: DS37587  Rev.3 - 2 

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May 2016 © Diodes Incorporated 



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- [Supplier page](https://es.farnell.com/diodes-inc/dmt4004lps-13/mosfet-n-ch-40v-90a-powerdi-5060/dp/3943864RL)
---

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