# Power MOSFET, N Channel, 30 V, 13 A, 4900 µohm, UDFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3405212RL/)

**URL**: https://novapart.co/products/DMT35M4LFDF-7/power-mosfet-n-channel-30-v-13-a-4900-ohm-udfn2020
**SKU**: DMT35M4LFDF-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1490
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 860mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | UDFN2020 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 4900µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405212RL/)

**DMT35M4LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**BVDSS**<br>**RDS(ON) Max**<br>**ID Max**<br>**TA = +25°C**<br>30V<br>6.9mΩ @ VGS= 10V<br>13A<br>10.5mΩ @ VGS= 4.5V<br>10A|||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|30V|6.9mΩ @ VGS= 10V|13A|
||10.5mΩ @ VGS= 4.5V|10A|



## **Features** 

- 0.6mm Profile – Ideal for Low-Profile Applications 

- PCB Footprint of 4mm[2] 

- Low Gate Threshold Voltage 

- Low On-Resistance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

- **https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

## **Applications** 

- General Purpose Interfacing Switch 

- Power Management Functions 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish—NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.007 grams (Approximate) 

U-DFN2020-6 (Type F) 

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Top View 

Bottom View 

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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMT35M4LFDF-7|U-DFN2020-6(Type F)|3,000/Tape & Reel|
|DMT35M4LFDF-13|U-DFN2020-6 (TypeF)|10,000/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 8 **www.diodes.com** 

DMT35M4LFDF Datasheet number: DS42093 Rev. 3 - 2 

October 2019 © Diodes Incorporated 

**DMT35M4LFDF** 

## **Marking Information** 

Site 1 

||||||||||||**N4**<br>**XA**|**YM**<br>**XA**|**YM**<br>**XA**||XA = Product Type Marking Code<br>YM = Date Code Marking<br>Y = Year (ex: G = 2019)||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||M = Month (ex: 9 = September)||||||
||||||||||||||||||||||
|Date Code Key|||||||||||||||||||||
|**Year**<br>**2017**<br>**2018**<br>**2019**<br>**2020**<br>**2021**<br>**2022**<br>**2023**<br>**2024**<br>**2025**<br>**Code**<br>E<br>F<br>G<br>H<br>I<br>J<br>K<br>L<br>M<br>~~FF~~|||||||||||||||||||||
|**Month**<br>**Jan**<br>**Feb**<br>**Mar**<br>**Apr**<br>**May**<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>**Nov**<br>**Dec**<br>**Code**<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>O<br>N<br>D<br>~~rr~~|||||||||||||||||||||
|Site 2|||||||||||||||||||||
||||||||||||**O7**<br>**YWX**<br>**XA**||||XA = Product Type Marking Code<br>YWX = Date Code Marking<br>Y = Year (ex: 9 = 2019)<br>W = Week (ex: a = Week 27; z Represents Week 52 and 53)|||||W = Week (ex: a = Week 27; z Represents Week 52 and 53)|
||||||||||||||||X = Internal Code (ex: U = Monday)||||||
|Date Code Key<br>**Year**<br>**Code**<br>~~——— ~~|||**2019**<br>**2020**<br>**9**<br>**0**<br> ~~————~~||||||||**2021**<br>**1**||||**2022**<br>**2023**<br>**2024**<br>**2**<br>**3**<br>**4**<br>~~— — ~~|**2025**<br>**5**<br> ~~—~~||||**2026**<br>6|
|**Week**<br>**Code**<br>~~eS~~||||||**1-26**<br>A-Z|||||||||**27-52**<br>a-z|**53**<br>z|||||
|**Internal Code**<br>**Code**<br>~~pf~~|||**Sun**<br>T|||**Mon**<br>U||||||||**Tue**<br>V|**Wed**<br>**Thu**<br>W<br>X|**Fri**<br>Y||||**Sat**<br>Z|



2 of 8 **www.diodes.com** 

DMT35M4LFDF Datasheet number: DS42093 Rev. 3 - 2 

October 2019 © Diodes Incorporated 

**DMT35M4LFDF** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current, VGS= 10V (Note 6)|Steady<br>State|TC= +25°C|ID|13|A|
|||TC= +70°C||11||
|Maximum BodyDiode Forward Current|||IS|2.4|A|
|Pulsed Drain Current(380μs Pulse,DutyCycle = 1%)|||IDM|90|A|
|Pulsed Drain BodyDiode Forward Current(380μs Pulse,DutyCycle = 1%)|||ISM|90|A|
|Avalanche Current(L = 0.1mH) (Note 8)|||IAS|22|A|
|Avalanche Energy (L = 0.1mH) (Note 8)|||EAS|25|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|0.86|W|
|Thermal Resistance, Junction to Ambient(Note 5)|Steady State|RJA|147|°C/W|
|Total Power Dissipation(Note 6)||PD|1.7|W|
|Thermal Resistance,Junction to Ambient(Note 6)|Steady State|RJA|73|°C/W|
|Thermal Resistance,Junction to Case(Note 7)||RJC|6.7||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 9)|||||||
|Drain-Source Breakdown Voltage|BVDSS|30|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|1|μA|VDS= 24V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 9)|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|1.15<br>~~ee~~|—<br>~~ee~~|2.5<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|4.9<br>~~ee~~|6.9<br>~~ee~~|mΩ<br>~~ee~~|VGS= 10V,ID=20A<br>~~ee~~|
||||7.1<br>~~ee~~|10.5<br>~~ee~~||VGS= 4.5V,ID= 15A<br>~~ee~~|
|Diode Forward Voltage<br>~~ee~~|VSD<br>~~ee~~|—<br>~~ee~~|0.7<br>~~ee~~|1<br>~~ee~~|V<br>~~ee~~|VGS= 0V,IS= 1A<br>~~ee~~|
|**DYNAMIC CHARACTERISTICS**(Note 10)|||||||
|Input Capacitance<br>~~i~~|Ciss<br>|—<br>|1009<br>|—<br>|pF<br>~~SST~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~SST~~|
|Output Capacitance<br>~~i~~|Coss<br>|—<br>|925<br>|—<br>|||
|Reverse Transfer Capacitance<br>~~SST~~|Crss<br>~~SST~~|—<br>~~SST~~|50<br>~~SST~~|—<br>~~SST~~|||
|Gate Resistance<br>~~SST~~|Rg<br>~~SST~~|—<br>~~SST~~|2<br>~~SST~~|—<br>~~SST~~|Ω<br>~~SST~~|VDS= 0V,VGS= 0V,f =1.0MHz<br>~~SST~~|
|Total Gate Charge(VGS= 4.5V)<br>~~SST~~|Qg<br>~~SST~~|—<br>~~SST~~|8.1<br>~~SST~~|—<br>~~SST~~|nC<br>~~SST~~|VDD= 15V, ID= 9A<br>~~SST~~|
|Total Gate Charge(VGS= 10V)<br>~~SST~~|Qg<br>~~SST~~|—<br>~~SST~~|14.9<br>~~SST~~|—<br>~~SST~~|||
|Gate-Source Charge<br>~~SST~~|Qgs<br>~~SST~~|—<br>~~SST~~|2.3<br>~~SST~~|—<br>~~SST~~|||
|Gate-Drain Charge<br>~~SST~~|Qgd<br>~~SST~~|—<br>~~SST~~|3.4<br>~~SST~~|—<br>~~SST~~|||
|Turn-On DelayTime<br>~~ee~~|tD(ON)<br>~~ee~~|—<br>~~ee~~|3.6<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~<br>~~_———~~<br>~~ee~~|VDD= 15V, VGS= 10V,<br>Rg= 3Ω, ID= 9A<br>~~ee~~<br>~~_———~~|
|Turn-On Rise Time<br>~~ee~~|tR<br>~~ee~~|—<br>~~ee~~|4.4<br>~~ee~~|—<br>~~ee~~|||
|Turn-Off DelayTime<br>~~ee~~<br>~~a~~|tD(OFF)<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>~~ee~~|15<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|||
|Turn-Off Fall Time<br>~~ee~~<br>~~_———~~<br>~~a~~|tF<br>~~ee~~<br>~~_———~~<br>~~a~~|—<br>~~ee~~<br>~~_———~~<br>~~ee~~|6.9<br>~~ee~~<br>~~_———~~<br>~~ee~~|—<br>~~ee~~<br>~~_———~~<br>~~ee~~|||
|Reverse RecoveryTime<br>~~_———~~<br>~~a~~|tRR<br>~~_———~~<br>~~a~~|—<br>~~_———~~<br>~~ee~~|29.4<br>~~_———~~<br>~~ee~~|—<br>~~_———~~<br>~~ee~~|ns<br>~~_———~~<br>~~ee~~|IF= 1.5A, di/dt = 100A/μs<br>~~_———~~|
|Reverse RecoveryCharge<br>~~_———~~<br>~~a~~|QRR<br>~~_———~~<br>~~a~~|—<br>~~_———~~<br>~~ee~~|19.2<br>~~_———~~<br>~~ee~~|—<br>~~_———~~<br>~~ee~~|nC<br>~~_———~~<br>~~ee~~||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

3 of 8 **www.diodes.com** 

DMT35M4LFDF Datasheet number: DS42093 Rev. 3 - 2 

October 2019 © Diodes Incorporated 

**DMT35M4LFDF** 

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30.0   30<br>VDS = 5V<br>25.0   RAS  VGS=3.5V  ft | 25  e ee<br> VGS = 4.0V<br>20.0   BRS  VGS = 4.5V  7 20  ee | |<br>15.0    VGS = 10.0V  VGS = 6.0V   VGS = 3.0V  15  TJ=125 ℃<br>10.0   a | a a 10  ehy s TJ=85 ℃<br> VGS = 2.8V  TJ=150 ℃ TJ=25 ℃<br>5.0   5<br>Lo  VGS = 2.5V  a TJ=-55 ℃<br>0.0   pO 0  By.<br>0  0.5  1  1.5  2  2.5  3  1  1.5  2  2.5  3  3.5  4<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.008   VGS = 4.5V  0.018 0.02  Ftd | | tt ty<br>0.007<br>0.016 0.014  PtyPty tttT | ttet td<br>0.006  0.012  PT te)ft<br>0.005  0.01  PF fy | | TT TTty<br> VGS = 10V  0.008  ID = 20A<br>0.004<br>0.006<br>0.004<br>0.003<br>0.002  Pt | | tt tt td<br>0.002  — 0  peft} | | | tlt ft<br>0  5  10  15  20  25  30  0  2  4  6  8  10  12  14  16  18  20<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.01  1.8<br>0.009  VGS = 10V<br>0.008  ee TJ=150 ℃ 1.6  Pt [tte]<br>0.007  1.4   VGS = 10V, ID = 20A<br>0.006  SS TJ=125 ℃ S yy<br>0.005  TJ=85 ℃ = 1.2<br>0.004  TJ=25 ℃<br>n a 1  e<br>0.003  TJ=-55 ℃  VGS = 4.5V, ID = 15A<br>0.002<br>0.8<br>SS e e<br>0.001<br>0  Oe 0.6  Pf} et et et<br>0  5  10  15  20  25  30  -50  -25  0  25  50  75  100  125  150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Junction<br>Junction Temperature  Temperature<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A) ID ID<br>)  )<br>(W (W<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE ON- W (NORMALIZED)<br>RESISTANCE (<br>DS(ON)<br>R , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


4 of 8 **www.diodes.com** 

DMT35M4LFDF Datasheet number: DS42093 Rev. 3 - 2 

October 2019 

© Diodes Incorporated 

**DMT35M4LFDF** 

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0.012<br>0.01  Ty  VGS = 4.5V, ID = 15A  7<br>0.008<br>e rt]<br>0.006<br>><br>0.004  =  VGS = 10V, ID = 20A  —<br>0.002  cy 7<br>[EE]<br>0  PEt [yy]<br>-50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction<br>Temperature<br>30<br>VGS = 0V<br>25  ee ||<br>20  eee |<br>15  ee |e<br>10  IPN TJ = 85 ℃<br>TJ = 125 ℃<br>5  TJ = 150 ℃ ie TJ = 25 ℃<br>TJ = -55 ℃<br>Wi :<br>0  LY,J)<br>0  0.3  0.6  0.9  1.2  1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current<br>)<br>(W<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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10<br>8<br>6<br>4<br>VDS = 15V, ID = 9A<br>2<br>0<br>0  3  6  9  12  15<br>Qg (nC)<br>Figure 11. Gate Charge<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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2.2<br>2<br>EF [Tt]<br>1.8  ID = 1mA<br>1.6  AR<br>1.4<br>oo; ID = 250μA   A<br>1.2<br>OM :<br>1<br>e e<br>0.8<br>0.6  PEELE San<br>-50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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10000<br>f=1MHz<br>= Ciss<br>1000<br>a Coss<br>100   e e<br>ee Crss<br>10<br>i<br>——<br>————<br>1   eeee<br>0  5  10  15  20  25  30<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>100<br>RDS(ON) Limited  PW =100µs<br>10<br>1<br>PW =1ms<br>PW =10ms<br>0.1  PW =100ms<br>SE RAN<br>PW =1s<br>0.01  TJ(Max) = 150 ℃  TC = 25 ℃ regi PW DC<br>Single Pulse<br>DUT on 1*MRP Board<br>0.001  VGS= 10V  Re ll<br>0.01  0.1  1  10  100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


5 of 8 **www.diodes.com** 

DMT35M4LFDF Datasheet number: DS42093 Rev. 3 - 2 

October 2019 © Diodes Incorporated 

**DMT35M4LFDF** 

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1  | ep rs ee es uo es SESS] ee nn a<br>Srmmm<br>D=0.7<br>Ea | EHH Cm mL ETPCr tHE<br>EEEmr<br>D=0.5<br>CT eT<br>C T TT TIE IE TE PT<br>a D=0.3  EO TTT D=0.9<br>0.1  e s s ARTe!a ea<br>D=0.1  Oe<br>Fy CE eg oo oe<br>i e aa ee|<br>cece<br>D=0.05<br>E S fer ae eee<br>SB VE EYE EME I<br>ST D=0.02  TT TTT<br>D=0.01<br>0.01  leUT T T ee A<br>e o<br>EE D=0.005  oo oe<br>Yt Io T RIE TT I<br>frre AA AP PT)ee<br>O N<br>D=Single Pulse<br>a U TI RθJA(t) = r(t) * RθJA<br>RθJA = 143 ℃ /W<br>Duty Cycle, D = t1 / t2<br>0.001  Baral TCIM TAT Te oe<br>1E-06 1E-05 0.0001 0.001  0.01  0.1  1  10  100  1000  10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


6 of 8 **www.diodes.com** 

DMT35M4LFDF Datasheet number: DS42093 Rev. 3 - 2 

October 2019 © Diodes Incorporated 

**DMT35M4LFDF** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type F)** 

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**----- Start of picture text -----**<br>
U-DFN2020-6<br>A1 A3 (Type F)<br>A Dim  Min  Max  Typ<br>A  0.57 0.63 0.60<br>Seating Plane A1  0.00 0.05 0.03<br>Lh hte = A3 —  —  0.15<br>b 0.25 0.35 0.30<br>D D  1.95 2.05 2.00<br>D2  0.85 1.05 0.95<br>e3 e4<br>D2a  0.33 0.43 0.38<br>E  1.95 2.05 2.00<br>E2  1.05 1.25 1.15<br>k2 E2a 0.65 0.75 0.70<br>D2a e  0.65 BSC<br>z2<br>e2  0.863 BSC<br>D2 e3  0.70 BSC<br>E E2a E2 e4  0.325 BSC<br>k  0.37 BSC<br>k1 k1  0.15 BSC<br>k e2 L k2  0.36 BSC<br>z1 L  0.225 0.325 0.275<br>z  0.20 BSC<br>z1  0.110 BSC<br>z2  0.20 BSC<br>e b All Dimensions in mm<br>z(4x) EES =<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type F)** 

**==> picture [195 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
X3<br>C X Y<br>( Saas<br>Y3 Y2 Y1 Y4<br>X1<br>Pin1<br>X2<br>**----- End of picture text -----**<br>


**==> picture [99 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
Value<br>Dimensions<br>(in mm)<br>C  0.650<br>X  0.400<br>X1  0.480<br>Ee X2  0.950<br>X3  1.700<br>Y  0.425<br>Y1  0.800<br>Y2  1.150<br>Y3  1.450<br>Y4  2.300<br>**----- End of picture text -----**<br>


7 of 8 

DMT35M4LFDF Datasheet number: DS42093 Rev. 3 - 2 

October 2019 © Diodes Incorporated 

**www.diodes.com** 

**DMT35M4LFDF** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMT35M4LFDF Datasheet number: DS42093 Rev. 3 - 2 

October 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMT35M4LFDF-7/power-mosfet-n-channel-30-v-13-a-4900-ohm-udfn2020)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmt35m4lfdf-7/mosfet-n-ch-30v-13a-150deg-c-0/dp/3405212RL)
---

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