# Power MOSFET, N Channel, 30 V, 100 A, 1400 µohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3828439RL/)

**URL**: https://novapart.co/products/DMT32M4LFG-7/power-mosfet-n-channel-30-v-100-a-1400-ohm-powerdi
**SKU**: DMT32M4LFG-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3410
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.6W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 1400µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3828439RL/)

**DMT32M4LFG** 

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## **30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8** 

## **Product Summary** 

## **Features and Benefits** 

- Low RDS(ON) – Ensures On-State Losses Are Minimized 

|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|---|---|---|
|30V|1.7mΩ @ VGS= 10V|100A|
||2.8mΩ @ VGS= 4.5V|100A|



- Excellent Qgd × RDS(ON) Product (FOM) 

- Advanced Technology for DC-DC Converts 

- Small Form Factor Thermally Efficient Package Enables Higher Density End Products 

- Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 

- 100% UIS (Avalanche) Rated 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.** 

   - **https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

## **Applications** 

   - Case: PowerDI[®] 3333-8 

- Backlighting 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Power Management Functions 

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 DC-DC Converters  UL Flammability Classification Rating 94V-0<br> Moisture Sensitivity: Level 1 per J-STD-020<br> Terminal Connections Indicator: See Diagram<br> Terminal Finish – Matte Tin Annealed Over Copper Lead-Frame.<br>Solderable per MIL-STD-202, Method 208<br> Weight: 0.008 grams (Approximate)<br>PowerDI3333-8<br>S Pin 1 D<br>S 1 8<br>S<br>G<br>2 7<br>3 6 G<br>D<br>D 4 5<br>D<br>D S<br>Top View  Bottom View  Top View  Equivalent Circuit<br>Ordering Information (Note 4)<br>Part Number Case Packaging<br>DMT32M4LFG-7  PowerDI3333-8 2,000/Tape & Reel<br>DMT32M4LFG-13  PowerDI3333-8 3,000/Tape & Reel<br>Notes:  1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.<br>2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"<br>    and Lead-free.<br>3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and<br>    <1000ppm antimony compounds.<br>4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.<br>PowerDI is a registered trademark of Diodes Incorporated.  [es][®]<br>DMT32M4LFG 1 of 8<br>Document number: DS43422 Rev. 2 - 2 www.diodes.com<br>**----- End of picture text -----**<br>


   - Terminal Finish – Matte Tin Annealed Over Copper Lead-Frame. Solderable per MIL-STD-202, Method 208 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

March 2021 © Diodes Incorporated 

**DMT32M4LFG** 

## **Marking Information** 

SK3 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 1 = 2021) W = Week (ex: a = Week 27; z Represents Week 52 and 53) **SK3** X = Internal Code (ex: U = Monday) 

Date Code Key **Year 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032** ~~**e**~~ **Code** ~~s~~ 1 2 3 4 5 ~~eee~~ 6 ~~ee~~ 7 ~~ee~~ 8 ~~ee~~ 9 ~~ee~~ 0 ~~ee~~ 1 ~~ee~~ 2 **Week 1-26 27-52 53 Code** A-Z a-z z ~~aee~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~ee~~ **Code** T U V W X Y Z 

## **Maximum Ratings** (@ TC = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@ TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@ TC = +25°C, unless otherwise specified.)C = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|30|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|TC= +25°C<br>TC= +70°C|ID|100<br>100|A|
|Continuous Drain Current (Note 6) VGS= 10V|TA= +25°C<br>TA= +70°C|ID|30<br>24|A|
|Maximum Continuous BodyDiode Forward Current (Note 5)||IS|2.8|A|
|Pulsed Drain Current (380μs Pulse, DutyCycle = 1%)||IDM|440|A|
|Pulsed Body Diode Forward Current (380μs Pulse, Duty Cycle = 1%)||ISM|440|A|
|Avalanche Current, L = 0.1mH||IAS|58|A|
|Avalanche Energy, L = 0.1mH||EAS|172|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.1|W|
|Thermal Resistance, Junction to Ambient (Note 5)||RθJA|115|°C/W|
|Total Power Dissipation (Note 6)|TC= +25°C|PD|2.6|W|
|Thermal Resistance, Junction to Ambient (Note 6)||RθJA|49|°C/W|
|Thermal Resistance, Junction to Case (Note 6)||RθJC|3.9|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

6. Thermal resistance from junction to soldering point (on the exposed drain pad). 

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**DMT32M4LFG** 

**Electrical Characteristics** (@TJ = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TJ = +25°C, unless otherwise specified.)J = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TJ = +25°C, unless otherwise specified.)J = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TJ = +25°C, unless otherwise specified.)J = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TJ = +25°C, unless otherwise specified.)J = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TJ = +25°C, unless otherwise specified.)J = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TJ = +25°C, unless otherwise specified.)J = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TJ = +25°C, unless otherwise specified.)J = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~DG~~|**Symbol**<br>~~DG~~|**Min**<br>~~DG~~|**Typ **<br>~~DG~~|**Max**<br>~~DG~~<br>~~DO~~|**Unit**<br>~~DG~~|**Test Condition**<br>~~DG~~|
|**OFF CHARACTERISTICS** (Note 7)<br>~~DO~~<br>~~pe~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|30<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= 1mA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1<br>~~ee~~|μA<br>~~ee~~|VDS= 24V, VGS= 0V<br>~~ee~~|
|||—<br>~~ee~~|—<br>~~ee~~|10<br>~~ee~~||VDS= 30V, VGS= 0V<br>~~ee~~|
|Gate-Source Leakage|IGSS|—|—|±10|μA|VGS= 20V, VDS= 0V<br>VGS= -16V, VDS= 0V|
|**ON CHARACTERISTICS**(Note 7)<br>~~pe~~<br>~~GO~~<br>~~CO~~|||||||
|Gate Threshold Voltage<br>~~GG~~|VGS(TH)<br>~~GG~~|1<br>~~GG~~|—<br>~~GG~~|3<br>~~GG~~<br>~~GO~~|V<br>~~GG~~<br>~~CO~~|VDS= VGS, ID= 250μA<br>~~GG~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|—<br>~~ee~~|1.4<br>~~ee~~|1.7<br>~~GO~~<br>~~ee~~|mΩ<br>~~CO~~<br>~~ee~~|VGS= 10V, ID= 20A<br>~~ee~~|
|||—<br>~~ee~~|2.1<br>~~ee~~|2.8<br>~~ee~~<br>~~CGO~~|mΩ<br>~~ee~~<br>~~CGO~~|VGS= 4.5V, ID= 15A<br>~~ee~~|
|Diode Forward Voltage<br>~~GG~~|VSD<br>~~GG~~|—<br>~~GG~~|0.7<br>~~GG~~|1<br>~~GG~~<br>~~CGO~~|V<br>~~GG~~<br>~~CGO~~|VGS= 0V, IS= 2A<br>~~GG~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)<br>~~CGO~~|||||||
|Input Capacitance<br>~~a~~|Ciss<br>~~a~~|—<br>~~a~~|4366<br>~~a~~|—<br>~~a~~|pF<br>~~O~~|VDS= 15V, VGS= 0V,<br>f = 1MHz<br>~~OO~~|
|Output Capacitance|Coss|—|1568|—|||
|Reverse Transfer Capacitance|Crss|—<br>~~OO~~|262<br>~~OO~~|—<br>~~OO~~|||
|Gate Resistance<br>~~GO~~|Rg<br>~~GO~~|—<br>~~GO~~<br>~~OO~~|0.86<br>~~GO~~<br>~~OO~~|—<br>~~GO~~<br>~~OO~~|Ω<br>~~GO~~<br>~~O~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~GO~~<br>~~OO~~|
|Total Gate Charge(VGS= 4.5V)<br>~~a~~|Qg<br>~~a~~|—<br>~~OO~~<br>~~a~~|33.5<br>~~OO~~<br>~~a~~|—<br>~~OO~~<br>~~a~~|nC<br>~~O~~<br>~~a~~<br>|VDS= 15V, ID= 20A<br>~~OO~~<br>|
|Total Gate Charge(VGS= 10V)<br>~~**a**~~|Qg<br>~~**a**~~|—<br>~~**a**~~|67<br>~~**a**~~|—<br>~~**a**~~|||
|Gate-Source Charge<br>~~**a**~~|Qgs<br>~~**a**~~|—<br>~~**a**~~|10.2<br>~~**a**~~|—<br>~~**a**~~|||
|Gate-Drain Charge<br>~~**a**~~|Qgd<br>~~**a**~~|—<br>~~**a**~~|12.9<br>~~**a**~~|—<br>~~**a**~~|||
|Turn-On DelayTime<br><br>~~a~~|tD(ON)<br><br>~~a~~|—<br><br>~~a~~|8<br><br>~~a~~|—<br><br>~~a~~|ns<br>~~Pt~~|VDD= 15V, VGS= 10V,<br>RG= 3Ω, ID= 20A<br>~~Pt~~|
|Turn-On Rise Time<br><br>~~a~~|tR<br><br>~~a~~|—<br><br>~~a~~|22<br><br>~~a~~|—<br><br>~~a~~|||
|Turn-Off DelayTime<br><br>~~a~~|tD(OFF)<br><br>~~a~~|—<br><br>~~a~~|48<br><br>~~a~~|—<br><br>~~a~~|||
|Turn-Off Fall Time<br><br>~~a~~<br>~~es~~|tF<br><br>~~a~~<br>~~es~~|—<br><br>~~a~~<br>~~es~~|29<br><br>~~a~~<br>~~es~~|—<br><br>~~a~~<br>~~es~~|||



Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 

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**DMT32M4LFG** 

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50.0 20<br>45.0 VGS = 10.0V VDS = 5V<br>40.0 VGS = 5.0V<br>VGS = 4.5V 15<br>35.0 VGS = 4.0V<br>30.0 VGS = 3.5V<br>VGS = 3.0V<br>25.0 ae |r 10 e | e ||<br>20.0<br>15.0 TJ = 85℃<br>VGS = 2.5V 5 TJ = 150℃ TJ = 25℃<br>10.0 VGS = 2.3V VGS = 2.4V TJ = 125℃ TJ = -55℃<br>5.0<br>0.0 pt 0 Wy<br>0 0.5 1 1.5 2 2.5 3 0 1 2 3 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.004 0.04<br>0.0035<br>0.003 0.03<br>0.0025 o VGS = 4.5V o WL<br>0.002 Se er 0.02 OTT<br>0.0015 ID = 20A<br>VGS = 10V ID = 15A<br>0.001 —— —— 0.01 I b<br>0.0005 S S<br>0 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.0025 2.2<br>TJ = 150℃<br>2<br>0.002 Tt TTT<br>TJ = 125℃ 1.8<br>TJ = 85℃ 1.6<br>0.0015<br>S R EE<br>TJ = 25℃ 1.4 VGS = 10V, ID = 20AGS = 10V, ID = 20A= 10V, ID = 20AD = 20A= 20A<br>0.001 ne TJ = -55℃ e 1.2 ee<br>1<br>0.0005<br>VGS = 4.5V, ID = 15AGS = 4.5V, ID = 15A= 4.5V, ID = 15AD = 15A= 15A<br>C OA TES 0.8 po e o o<br>VGS = 10V<br>0 FL etd 0.6 San<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)J, JUNCTION TEMPERATURE (℃), JUNCTION TEMPERATURE (℃)℃))<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Junction<br>Junction Temperature Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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2.2<br>2<br>TTT<br>1.8<br>1.6<br>EE<br>1.4<br>VGS = 10V, ID = 20AGS = 10V, ID = 20A= 10V, ID = 20AD = 20A= 20A<br>1.2 ee<br>1<br>VGS = 4.5V, ID = 15AGS = 4.5V, ID = 15A= 4.5V, ID = 15AD = 15A= 15A<br>0.8 po e o o<br>0.6 San<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)J, JUNCTION TEMPERATURE (℃), JUNCTION TEMPERATURE (℃)℃))<br>Figure 6. On-Resistance Variation with Junction<br>Temperature<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMT32M4LFG** fe 

## Lr. 

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3<br>2.5 ER<br>2<br>ID = 1mAD = 1mA= 1mA<br>1.5 R S<br>—~<br>a ee<br>1<br>ID = 250μAD = 250μA= 250μA —<br>0.5 Z oS!<br>0 CCEELELT<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)J, JUNCTION TEMPERATURE (℃), JUNCTION TEMPERATURE (℃)℃))<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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0.0035 3<br>0.00250.003 Pi tt ttrae 2.5 ER<br>VGS = 4.5V, ID = 15A 2<br>Z| -<br>0.002 ID = 1mAD = 1mA= 1mA<br>ie 1.5 R S<br>0.0015 —mT [ee]| —~<br>a a ee<br>1<br>0.001 part VGS = 10V, ID = 20A ID = 250μAD = 250μA= 250μA —<br>0.0005 a 0.5 Z oS!<br>0 0 CCEELELT<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)J, JUNCTION TEMPERATURE (℃), JUNCTION TEMPERATURE (℃)℃))<br>Figure 7. On-Resistance Variation with Junction  Figure 8. Gate Threshold Variation vs. Junction Temperature<br>Temperature<br>30 100000<br>VGS = 0V f = 1MHz<br>25 eee eee — —<br>10000<br>Ciss<br>20 eee |e —pf ——<br>1000 Coss<br>15 ee |e = SS —————————==<br>Crss<br>100<br>TJ = 150 [o] C<br>10 TJ = 125 [o] C TJ = 85 [o] C Es es<br>TJ = 25 [o] C 10<br>5 TJ = -55 [o] C<br>0 — DS ZZ. 1 a ————Es es<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 1000<br>RDS(ON) PW = 1µs<br>Limited<br>PW = 10µs<br>8 de NEN Nf [TTT<br>100<br>6 LLIN NTN PT<br>PW = 100µs<br>10<br>PW = 1ms<br>4 VDS = 15V, ID = 20ADS = 15V, ID = 20A = 15V, ID = 20AD = 20A = 20A = PW = 10ms oN ONE<br>|_| PW = 100ms                                                            ONS TJ(Max) = 150℃<br>1 PW = 1s TC = 25℃<br>2 Single Pulse<br>DUT on Infinite<br>PT Heatsink<br>0 0.1 Ce Co VGS = 10V<br>0 10 20 30 40 50 60 70 0.1 1 10 100 1000<br>Qg (nC)g (nC) (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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10<br>8<br>6<br>4 VDS = 15V, ID = 20ADS = 15V, ID = 20A = 15V, ID = 20AD = 20A = 20A<br>2<br>0<br>0 10 20 30 40 50 60 70<br>Qg (nC)g (nC) (nC)<br>Figure 11. Gate Charge<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1<br>ee ]<br>D = 0.7<br>ee SC aeater Tr<br>D = 0.5<br>S S<br>D = 0.3<br>0.1 ane LUI ELIEAllTEINeegeeZ| D = 0.9 OTETI<br>e D = 0.1 o | a a<br>a ET Ht aeT(ATTL<br>A /y | Tt ET TT TTT TT TT]<br>P F<br>D = 0.05<br>F rm CEM A C TPCITTNEE<br>ill T Y A LLL OTE| TI<br>D = 0.02<br>a Y LM TU<br>0.01 AN A ae a<br>Se D = 0.01 e Te ec sc eee ee<br>Fett A<br>Poot A<br>D = 0.005<br>F sna COMBATAL ETM<br>RθJA (t) = r(t) * RθJA<br>D = Single Pulse RθJA = 113.8℃/W<br>Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMT32M4LFG** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI3333-8** 

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**----- Start of picture text -----**<br>
A1 A3<br>A PowerDI3333-8<br>Seating Plane Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>A1  0.00 0.05 0.02<br>of D EE A3    0.203<br>b  0.27  0.37  0.32<br>L(4x)<br>D2 b2  0.15 0.25 0.20<br>1 D  3.25 3.35 3.30<br>D2  2.22  2.32  2.27<br>Pin #1 ID E  3.25 3.35 3.30<br>b2(4x) E4 E2  1.56 1.66 1.61<br>E3  0.79 0.89 0.84<br>peal E4  1.60 1.70 1.65<br>E<br>E2 E3 L e  0.35 0.45 0.65 0.40<br>L1    0.39<br>L1(3x) All Dimensions in mm z    0.515<br>8<br>z(4x) b<br>e<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI3333-8** 

**==> picture [139 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
X3<br>X2<br>8<br>Y4<br>Y1 X1<br>Y2<br>Y3<br>(ey<br>Y<br>1<br>X nooo C<br>**----- End of picture text -----**<br>


|**Dimensions V**|**Value (in mm)**|
|---|---|
|**C**|**()**<br>0.650|
|**X**|0.420|
|**X1**|0.420|
|**X2**|0.230|
|**X3**|2.370|
|**Y**|0.700|
|**Y1**|1.850|
|**Y2**|2.250|
|**Y3**|3.700|
|**Y4**|0.540|



7 of 8 **www.diodes.com** 

DMT32M4LFG Document number: DS43422 Rev. 2 - 2 

March 2021 © Diodes Incorporated 

**DMT32M4LFG** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

## **www.diodes.com** 

8 of 8 **www.diodes.com** 

DMT32M4LFG Document number: DS43422 Rev. 2 - 2 

March 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMT32M4LFG-7/power-mosfet-n-channel-30-v-100-a-1400-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmt32m4lfg-7/power-mosfet-30v-100a-powerdi/dp/3828439RL)
---

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