# Power MOSFET, N Channel, 30 V, 14.1 A, 5800 µohm, UDFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3619753/)

**URL**: https://novapart.co/products/DMT3006LFDFQ-7/power-mosfet-n-channel-30-v-141-a-5800-ohm
**SKU**: DMT3006LFDFQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1370
**Stock**: 100+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | UDFN2020 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 14.1A |
| Drain Source On State Resistance | 5800µohm |
| Gate Source Threshold Voltage Max | 1.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3619753/)

**DMT3006LFDFQ N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

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**----- Start of picture text -----**<br>
||||
|---|---|---|
|ID Max|
|BVDSS|RDS(ON) Max|
|TA = +25°C|
|7mΩ @ VGS = 10V|14.1A|
|30V|10mΩ @ VGS = 4.5V|11.8A|
|15mΩ @ VGS = 3.7V|9.6A|

**----- End of picture text -----**<br>


## **Features** 

- 0.6mm Profile – Ideal for Low Profile Applications 

- PCB Footprint of 4mm[2] 

- Low Gate Threshold Voltage 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DMT3006LFDFQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

      - Case: U-DFN2020-6 

      - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

      - Moisture Sensitivity: Level 1 per J-STD-020 

   - Battery Management Application 

- 

- Power Management Functions 

- DC-DC Converters 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.0065 grams (Approximate) 

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**U-DFN2020-6 (Type F)** 

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|||||
|---|---|---|---|
|G|
|>|41s][s|||[G3|
|es|Pin1|®&|
|S|
|Top View|Bottom View|Bottom View Pin Out|Internal Schematic|
|g Information Information|(Note 4)|
|Part Number|Reel Size (inches)|Quantity|per Reel|
|DMT3006LFDFQ-7|7|3,000|
|DMT3006LFDFQ-13|13|10,000|

**----- End of picture text -----**<br>


## **Ordering Information Information** (Note 4) 

Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 8 **www.diodes.com** 

DMT3006LFDFQ Datasheet number: DS41967  Rev. 2 - 2 

November 2020 © Diodes Incorporated 

**DMT3006LFDFQ** 

## **Marking Information** 

Site 1 6M = Product Type Marking Code YM = Date Code Marking **6M** Y = Year (ex: H = 2020) M = Month (ex: 9 = September) _ Date Code Key **Year 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031** ~~se~~ **Code** H I J ~~ee~~ K ~~ee~~ L ~~ee~~ M ~~ee~~ N ~~ee~~ O ~~ee~~ P ~~ee~~ R ~~ee~~ S T **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 7 8 ~~ee~~ 9 O N D Site 2 6M= Product Type Marking Code YWX = Date Code Marking **6M** Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) _ X = Internal Code (ex: U = Monday) Date Code Key **Year 2020 2021 2022 2023 2024 2025 2026 2027 2028** ~~ee~~ **Code 0 1 2 3 4** ~~es~~ **5** ~~ee~~ **6** ~~ee~~ **7 8 Week 1-26 27-52 53 Code** A-Z a-z z ~~es~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~ee~~ **Code** T U V W ~~ee~~ X Y Z 

2 of 8 **www.diodes.com** 

DMT3006LFDFQ Datasheet number: DS41967  Rev. 2 - 2 

November 2020 © Diodes Incorporated 

**DMT3006LFDFQ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|30|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|14.1<br>12.5|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|80|A|
|Continuous Source-Drain Diode Current (Note 6)||TA= +25°C|IS|2|A|
|Avalanche Current(Note 7)L = 0.1mH|||IAS|25|A|
|Avalanche Energy (Note 7)L = 0.1mH|||EAS|31|mJ|



## **Thermal Characteristics** 

|**Characteristic**|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|---|
|Total Power Dissipation(Note 5)|TA= +25°C|PD|0.8|W|
|Thermal Resistance,Junction to Ambient(Note 5)|SteadyState|RθJA|155|°C/W|
|Total Power Dissipation(Note 6)|TA= +25°C|PD|2.1|W|
|Thermal Resistance,Junction to Ambient(Note 6)|SteadyState|RθJA|60|°C/W|
|Thermal Resistance,Junction to Case(Note 6)|TC= +25°C|RθJC|6.9|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|~~——SSSee~~|~~——SSSee~~|~~——SSSee~~|~~——SSSee~~|~~——SSSee~~|~~——SSSee~~|~~——SSSee~~|
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~——SS~~|**Symbol**<br>~~——SS~~|**Min**<br>~~——SS~~|**Typ **<br>~~See~~|**Max**<br>~~See~~|**Unit**<br>~~See~~|**Test Condition**<br>~~See~~|
|**OFF CHARACTERISTICS(Note 8) **<br>~~——SSSee~~|||||||
|Drain-Source Breakdown Voltage<br>~~——SS~~|BVDSS<br>~~——SS~~|30<br>~~——SS~~|—<br>~~See~~|—<br>~~See~~|V<br>~~See~~|VGS= 0V,ID= 250μA<br>~~See~~|
|Zero Gate Voltage Drain Current(TJ= +25°C)<br>~~——SS~~|IDSS<br>~~——SS~~|—<br>~~——SS~~|—<br>~~See~~|1<br>~~See~~|µA<br>~~See~~|VDS= 24V,VGS= 0V<br>~~See~~|
|Gate-Source Leakage<br>~~——SS~~<br>~~ee~~|IGSS<br>~~——SS~~<br>~~ee~~|—<br>~~——SS ~~<br>~~ee~~|—<br> ~~See~~<br>~~ee~~|±100<br>~~See~~<br>~~ee~~|nA<br>~~See~~<br>~~ee~~|VGS= +20V, VDS= 0V<br>VGS= -16V,VDS= 0V<br>~~See~~<br>~~ee~~|
|**ON CHARACTERISTICS(Note 8) **|||||||
|Gate Threshold Voltage|VGS(TH)<br>~~|~~|1.0<br>~~|~~|1.3|3.0|V|VDS= VGS,ID= 250μA|
|Static Drain-Source On-Resistance<br>~~|~~|RDS(ON)<br>~~|~~<br>~~|~~|—<br>~~|~~<br>~~|~~|5.8<br>~~|~~|7<br>~~|~~|mΩ<br>~~|~~|VGS= 10V,ID= 9A<br>~~|~~|
||||7.8<br>~~|~~|10<br>~~|~~||VGS= 4.5V,ID= 8A<br>~~|~~|
||||9.3<br>~~|~~|15<br>~~|~~||VGS= 3.7V,ID= 5A<br>~~|~~|
|Diode Forward Voltage<br>~~|~~|VSD<br>~~|~~<br>~~|~~|—<br>~~|~~<br>~~|~~|0.7<br>~~|~~|1.0<br>~~|~~|V<br>~~|~~|VGS= 0V,IS= 2A<br>~~|~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~|~~<br>~~———~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~|~~<br>~~———~~|—<br>~~|~~<br>~~———~~|1,155<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= 15V, VGS= 0V,<br>f = 1.0MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|—<br>~~———~~|456<br>~~———~~|—<br>~~———~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|—<br>~~———~~|72<br>~~———~~|—<br>~~———~~|||
|Gate Resistance|RG|—|1.6|—|Ω|VDS= 0V, VGS= 0V,<br>f = 1.0MHz|
|Total Gate Charge(VGS= 4.5V)|QG|—|16.7|—|nC<br>~~eee~~|VDD= 15V, ID= 9A<br>~~eee~~|
|Total Gate Charge(VGS= 10V)|QG|—|8.4|—|||
|Gate-Source Charge|QGS|—|2.2|—|||
|Gate-Drain Charge<br>~~———~~|QGD|—|3.5<br>~~eee~~|—<br>~~eee~~|||
|Turn-On DelayTime<br>~~———~~|tD(ON)|—|3.5<br>~~eee~~|—<br>~~eee~~|ns<br>~~eee~~|VDD= 15V, VGS= 10V,<br>RG= 3Ω, ID= 9A<br>~~eee~~|
|Turn-On Rise Time<br>~~———~~|tR|—|5.5<br>~~eee~~|—<br>~~eee~~|||
|Turn-Off DelayTime<br>~~———~~|tD(OFF)|—|13.5<br>~~eee~~|—<br>~~eee~~|||
|Turn-Off Fall Time<br>~~———~~|tF|—|4.6<br>~~eee~~|—<br>~~eee~~|||
|Reverse RecoveryTime<br>~~———~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|19.3<br>~~eee~~<br>~~ee~~|—<br>~~eee~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~|IF= 1.5A, di/dt = 100A/μs<br>~~eee~~<br>~~ee~~|
|Reverse RecoveryCharge<br>~~———~~<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|8.6<br>~~eee~~<br>~~ee~~|—<br>~~eee~~<br>~~ee~~|nC<br>~~eee~~<br>~~ee~~||



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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DMT3006LFDFQ Datasheet number: DS41967  Rev. 2 - 2 

November 2020 © Diodes Incorporated 

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DMT3006LFDFQ<br>DIODES -——<br>30.0 20<br>VGS = 10.0V VDS = 5V<br>25.0 Fo VGS = 4.5V e<br>VGS = 4.0V<br>15<br>20.0 —_— VGS = 3.5V VGS = 3.0V |<br>15.0 10<br>125℃<br>10.0<br>150℃ 85℃<br>5<br>5.0 RO O VGS = 2.5V Hh 25℃<br>-55℃<br>0.0 -——— _- 0 | fe<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.01 0.0200.018 Pye | fF |<br>0.008 0.016 Py, | |tt<br>VGS = 4.5V<br>0.014<br>0.006 0.012 TEE EES<br>0.010<br>0.004 VGS = 10V 0.008 ID = 12A<br>0.006 REECE EEE<br>0.002 0.004 HSS SS<br>0.002<br>0 0.000 FEE EE EEE<br>0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.01 2<br>VGS = 10V<br>0.008 150℃<br>1.6<br>VGS = 10V, ID = 12A<br>125℃<br>0.006<br>85℃<br>1.2 HT Le<br>25℃<br>0.004 -55℃ Ltt Lebe VGS = 4.5V, ID = 12A r<br>0.8 e et<br>0.002<br>0 0.4 PLELEELL<br>0 5 10 15 20 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


Figure 5. Typical On-Resistance vs. Drain Current and Temperature 

4 of 8 **www.diodes.com** 

DMT3006LFDFQ Datasheet number: DS41967  Rev. 2 - 2 

November 2020 © Diodes Incorporated 

**DMT3006LFDFQ** [J 

## ln cor PoOoRATE DIODES 

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0.0140.0120.01 P7] | ft 7 fo fqB=<br>VGS = 4.5V, ID = 12A<br>0.0080.006 - p>a ea<br>0.004 VGS = 10V, ID = 12A<br>_—— a<br>0.002 rn |<br>0 ptt ty yf |<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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2.4<br>2.2<br>ee<br>2<br>ee<br>1.8<br>ID = 1mA<br>1.6 e—-__ e fTe [<br>1.4<br>E E E<br>1.2 ID = 250μA<br>1<br>R E<br>0.8<br>e e<br>0.6<br>0.4 P|a| ft te ey<br>-50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


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30 10000<br>f=1MHz<br>VGS = 0V<br>25 ee | p Ciss e<br>1000<br>20 S S<br>ee [||] a eee<br>Coss<br>15 100<br>eee | Ss ee<br>TA = 85 [o] C Crss<br>10 TA = 125 [o] C Wp HEL ——EE =<br>TA = 25 [o] C 10<br>5 TA = 150 [o] C<br>TA = -55 [o] C<br>0 LY) ] ii 1 eea<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance<br>10 100<br>RDS(ON) Limited PW =100µs<br>ENS<br>8<br>10 TTNIN,ENT TT<br>6 =<br>PW =1ms<br>1 S PW =10ms N<br>Zo. NO NCO NET<br>4 PW =100ms<br>VDS = 15V, ID = 12A 0.1 TJ(Max) = 150℃ PW UIE  =1s ANNNUON ETT<br>2 TC = 25℃<br>Single Pulse PW =10s<br>DUT on 1*MRP Board UT Ball<br>DC<br>0 0.01 VGS= 4.5V arma<br>0 5 10 15 20 25 0.01 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMT3006LFDFQ Datasheet number: DS41967  Rev. 2 - 2 

November 2020 © Diodes Incorporated 

**www.diodes.com** 

**DMT3006LFDFQ** 

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1<br>SSS<br>R D=0.7 EmereSSS SSS Th<br>D=0.5<br>B STCE NHIttt ttt<br>Sec D=0.3 a ot tT D=0.9 ni Cn<br>0.1 LULA [LUTE] | Lee Ta A |<br>Ss D=0.1 set dee ee tt<br>I D=0.05<br>1 a A |<br>I ry<br>0.01 D=0.02 GFLUG<br>Pe D=0.01 FSH<br>a | ee|| i( AF) | | iii | | titieeeht Py  ee RθJA(t) = r(t) * RθJA Thaul<br>D=0.005 RθJA = 154℃/W<br>Fs HEEB mull<br>a Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>0.001<br>1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMT3006LFDFQ Datasheet number: DS41967  Rev. 2 - 2 

November 2020 © Diodes Incorporated 

**DMT3006LFDFQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type F)** 

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**----- Start of picture text -----**<br>
A1 A3<br>A<br>Seating Plane<br>Te ale<br>D<br>e3 e4<br>k2<br>D2a<br>z2<br>D2<br>E E2a E2<br>k1<br>k e2 L<br>z1<br>e b<br>z(4x) teste<br>**----- End of picture text -----**<br>


|**U-DFN2020-6**<br>**(Type F)**<br>~~===~~|**U-DFN2020-6**<br>**(Type F)**<br>~~===~~|**U-DFN2020-6**<br>**(Type F)**<br>~~===~~|**U-DFN2020-6**<br>**(Type F)**<br>~~===~~|
|---|---|---|---|
|**Dim**<br>~~===~~|**Min**<br>~~===~~|**Max**<br>~~===~~|**Typ**<br>~~===~~|
|**A**<br>~~===~~|0.57<br>~~===~~|0.63<br>~~===~~|0.60<br>~~===~~|
|**A1**<br>~~===~~|0.00<br>~~===~~|0.05<br>~~===~~|0.03<br>~~===~~|
|**A3**<br>~~===~~|-<br>~~===~~|-<br>~~===~~|0.15<br>~~===~~|
|**b**<br>~~===~~|0.25<br>~~===~~|0.35<br>~~===~~|0.30<br>~~===~~|
|**D**|1.95|2.05|2.00|
|**D2**|0.85|1.05|0.95|
|**D2a**|0.33|0.43|0.38|
|**E**|1.95|2.05|2.00|
|**E2**|1.05|1.25|1.15|
|**E2a**|0.65|0.75|0.70|
|**e**|0.65BSC|||
|**e2**|0.863BSC|||
|**e3**|0.70BSC|||
|**e4**|0.325BSC|||
|**k**<br>~~=~~|0.37 BSC<br>~~=~~|||
|**k1**<br>~~=~~|0.15BSC<br>~~=~~|||
|**k2**<br>~~=~~|0.36BSC<br>~~=~~|||
|**L**<br>~~=~~|0.225 <br>~~=~~|0.325 <br>~~=~~|0.275<br>~~=~~|
|**z**<br>**z1**<br>~~=~~|0.20BSC<br>0.110BSC<br>~~=~~|||
|**z1**<br>~~=~~|0.110BSC<br>~~=~~|||
|**z2**<br>~~=~~|0.20BSC<br>~~=~~|||
|**All Dimensions in mm**<br>~~=~~||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type F)** 

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X3<br>C X Y<br>| iao |<br>Y3 Y2 Y1 Y4<br>X1<br>IG<br>Pin1<br>Toe X2<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value**<br>**(in mm)**|
|---|---|
|**C**|0.650|
|**X**<br>**X1**|0.400<br>0.480|
|**X1**|0.480|
|**X2**|0.950|
|**X3**|1.700|
|**Y**|0.425|
|**Y1**<br>**Y2**|0.800<br>1.150|
|**Y2**|1.150|
|**Y3**|1.450|
|**Y4**|2.300|



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DMT3006LFDFQ Datasheet number: DS41967  Rev. 2 - 2 

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**DMT3006LFDFQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMT3006LFDFQ Datasheet number: DS41967  Rev. 2 - 2 

November 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMT3006LFDFQ-7/power-mosfet-n-channel-30-v-141-a-5800-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmt3006lfdfq-7/mosfet-n-ch-30v-14-1a-udfn2020/dp/3619753)
---

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