# Power MOSFET, N Channel, 100 V, 4 A, 0.047 ohm, UDFN2020, Surface Mount

![Product image](https://novapart.co/image/farnell:3518393RL/)

**URL**: https://novapart.co/products/DMT10H072LFDF-7/power-mosfet-n-channel-100-v-4-a-0047-ohm-udfn2020
**SKU**: DMT10H072LFDF-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2330
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 800mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 800mW |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.047ohm |
| Transistor Case Style | UDFN2020 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4A |
| Drain Source On State Resistance | 0.047ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3518393RL/)

**DMT10H072LFDF** &. - **100V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|---|---|---|
|100V|62mΩ @ VGS= 10V|4A|
||80mΩ@VGS= 6V|3.5A|



## **Features and Benefits** 

- 0.6mm Profile – Ideal for Low Profile Applications 

- PCB Footprint of 4mm[2] 

- Low On-Resistance 

- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

## **Applications** 

- Power Management Functions 

- Battery Operated Systems and Solid-State Relays 

- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. 

## **Mechanical Data** 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 © **e4** 

- Weight: 0.0065 grams (Approximate) 

U-DFN2020-6 (Type F) 

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Top View 

Bottom View 

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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Quantity Per Reel**|
|DMT10H072LFDF-7|U-DFN2020-6(Type F)|3,000|
|DMT10H072LFDF-13|U-DFN2020-6 (TypeF)|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and 

Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 8 

DMT10H072LFDF Datasheet number: DS38574  Rev. 5 - 2 

February 2019 © Diodes Incorporated 

**www.diodes.com** 

**DMT10H072LFDF** 

## **Marking Information** 

U-DFN2020-6 (Type F) 

72 = Product Type Marking Code **72** YM = Date Code Marking Y = Year (ex: G = 2019) M = Month (ex: 9 = September) Date Code Key **Year 2019 2020 2021 2022 2023 2024 2025 2026 2027** ~~se~~ **Code G H I J K** ~~ee~~ **L** ~~ee~~ **M** ~~ee~~ **N O Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~ee~~ **Code** 1 2 3 4 5 6 7 ~~ee~~ 8 ~~ee~~ 9 ~~ee~~ O ~~ee~~ N D U-DFN2020-6 (Type F) 72 = Product Type Marking Code YWX = Date Code Marking **72** Y = Year (ex: 9 = 2019) W = Week (ex: a = week 27; z represents week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key **Year 2019 2020 2021 2022 2023 2024 2025 2026 2027** ~~ee~~ **Code** 9 0 1 2 3 4 ~~ee~~ 5 6 7 **Week 1-26 27-52 53** ~~_—~~ **Code** A-Z a-z z **Internal Code Sun Mon Tue Wed Thu Fri Sat** ~~ee~~ **Code** T U V W X Y Z 

2 of 8 **www.diodes.com** 

DMT10H072LFDF Datasheet number: DS38574  Rev. 5 - 2 

February 2019 © Diodes Incorporated 

**DMT10H072LFDF** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|100|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current, VGS= 10V (Note 6)|TA= +25°C<br>TA= +70°C|ID|4<br>3.2|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)||IDM|22|A|
|Maximum BodyDiode Continuous Current||IS|1.6|A|
|Avalanche Current,L = 0.1mH(Note 9)||IAS|6|A|
|Avalanche Energy,L = 0.1mH(Note 9)||EAS|1.8|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|0.8|W|
||TA= +70°C||0.5||
|Thermal Resistance,Junction to Ambient(Note 5)||RJA|149|°C/W|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.8|W|
||TA= +70°C||1.1||
|Thermal Resistance, Junction to Ambient(Note 6)||RJA|71|°C/W|
|Thermal Resistance, Junction to Case(Note 6)||RJC|13||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|100|—|—|V|VGS= 0V,ID= 250μA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|µA|VDS= 80V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7) **<br>~~es~~|||||||
|Gate Threshold Voltage<br>~~es~~|VGS(TH)<br>~~es~~|1<br>~~es~~|—<br>~~es~~|3<br>~~es~~|V<br>~~es~~|VDS= VGS,ID= 250μA<br>~~es~~|
|Static Drain-Source On-Resistance<br>~~i~~|RDS(ON)<br>~~i~~|—<br>~~i~~|47<br>~~i~~|62<br>~~i~~|mΩ<br>~~i~~|VGS= 10V,ID= 4.5A<br>~~i~~|
|||—<br>~~i~~|54<br>~~i~~|80<br>~~i~~||VGS= 6V,ID= 4A<br>~~i~~|
|||—<br>~~i~~|64<br>~~i~~|110<br>~~i~~|mΩ<br>~~i~~|VGS= 4.5V,ID= 2.6A<br>~~i~~|
|Diode Forward Voltage<br>~~Cf~~|VSD<br>~~Cf~~|—<br>~~Cf~~|0.7<br>~~Cf~~|1.0<br>~~Cf~~|V<br>~~Cf~~|VGS= 0V,IS= 1A<br>~~Cf~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~CO~~<br>~~ee~~<br>~~Cn~~|||||||
|Input Capacitance<br>~~CO———~~<br>~~Cn~~|Ciss<br>~~———~~<br>~~ee~~|—<br>~~———~~|228<br>~~———~~|—<br>~~———~~|pF<br>~~———~~|VDS= 50V, VGS= 0V,<br>f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~CO———~~<br>~~Cn~~|Coss<br>~~———~~<br>~~ee~~|—<br>~~———~~|89.3<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Reverse Transfer Capacitance<br>~~———~~<br>~~Cn~~|Crss<br>~~———~~<br>~~ee~~|—<br>~~———~~|2.5<br>~~———~~|—<br>~~———~~|pF<br>~~———~~||
|Gate Resistance<br>~~———~~<br>~~Cn————~~|Rg<br>~~———~~<br>~~ee~~|—<br>~~———~~|8.2<br>~~———~~|—<br>~~———~~<br>~~e~~|Ω<br>~~———~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~Cn————~~|Qg<br>~~ee~~|—|2.5|—<br>~~e~~|nC<br>~~e~~|VDS= 50V, ID= 4.5A<br>~~ee~~<br>~~eee~~|
|Total Gate Charge(VGS= 10V)<br>~~Cn————~~|Qg<br>~~ee~~|—|4.5|—<br>~~e~~|nC<br>~~e~~||
|Gate-Source Charge<br>~~————~~|Qgs|—|0.6|—<br>~~e~~|nC<br>~~e~~||
|Gate-Drain Charge<br>~~————~~<br>~~a~~<br>~~——<—~~|Qgd|—|1.3|—<br>~~e~~<br>~~eee~~|nC<br>~~e~~<br>~~eee~~||
|Turn-On DelayTime<br>~~————~~<br>~~a~~<br>~~——<—~~|tD(ON)|—|3.0|—<br>~~e~~<br>~~eee~~|ns<br>~~e~~<br>~~eee~~|VDS= 50V, RL= 11Ω<br>VGS= 10V, RGEN= 3Ω<br>~~ee~~<br>~~eee~~|
|Turn-On Rise Time<br>~~a~~<br>~~——<—~~|tR|—|3.1|—<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off DelayTime<br>~~——<—~~|tD(OFF)|—|12.3|—<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off Fall Time<br>~~——<—~~|tF|—|4.3|—<br>~~eee~~|ns<br>~~eee~~||
|Reverse RecoveryTime<br>~~——<—~~<br>~~se~~|tRR<br>~~se~~|—<br>~~se~~|22.9<br>~~se~~|—<br>~~eee~~<br>~~se~~|ns<br>~~eee~~<br>~~se~~|IF= 4.5A, di/dt = 300A/μs<br>~~eee~~<br>~~se~~|
|Reverse RecoveryCharge<br>~~se~~|QRR<br>~~se~~|—<br>~~se~~|45.2<br>~~se~~|—<br>~~se~~|nC<br>~~se~~||



Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

3 of 8 **www.diodes.com** 

DMT10H072LFDF Datasheet number: DS38574  Rev. 5 - 2 

February 2019 © Diodes Incorporated 

**DMT10H072LFDF** 

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20.0   10<br>18.0   VGS = 4.0V  VDS = 5V<br>16.0   VGS = 6.0V  8<br>14.0   VGS = 8.0V<br>12.0   VGS = 10.0V  6<br>10.0<br>8.0   4<br>6.0   VGS = 2.8V  VGS = 3.0V<br>4.0   2  TJ = 150 [o] C  TJ = 85 [o] C<br>2.0   VGS = 2.5V  VGS = 2.2V  TJ = 125 [o] C  TJ = 25 [o] C<br>TJ = -55 [o] C<br>0.0   0<br>0  1  2  3  4  5  1  1.5  2  2.5  3  3.5  4<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.09  0.5<br>0.085<br>0.08  HHL 0.4  ET<br>0.075  ID = 2.6A<br>0.07  0.3<br>tee EL ID = 4.0A<br>0.065<br>VGS = 4.5V<br>0.06  pf ee | 0.2  | Pf<br>0.055  S pe e<br>0.05  VGS = 6.0V  0.1  ID = 4.5A<br>pe e<br>0.045  VGS = 10V<br>SER EY pee et<br>0.04  0<br>0  2  4  6  8  10  12  14  16  18  20  0  4  8  12  16  20<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.12  2<br>0.11  VGS = 10V<br>TTT 1.8  TT VGS = 10.0V, ID = 4.5A  ><br>0.1<br>0.09  TJ = 150 [o] C  1.6  VGS = 6.0V, ID = 4.0A<br>0.08  s Sanne TJ = 125 [o] C  ee y 1.4  a Zi<br>0.07<br>0.06  eee TJ = 85 [o] C  1.2  Gene 4a<br>PTT TTT L4<br>0.05  1<br>TJ = 25 [o] C  VGS = 4.5V, ID = 2.6A<br>0.04<br>a to 0.8  a<br>Pe ]<br>0.03<br>0.02  TJ = -55 [o] C  0.6<br>Saeeneeene AGEEEEEE<br>0  2  4  6  8  10  12  14  16  18  20  -50  -25  0  25  50  75  100  125  150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Junction<br>Junction Temperature  Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>)  ) <br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br><br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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DMT10H072LFDF 

February 2019 © Diodes Incorporated 

Datasheet number: DS38574  Rev. 5 - 2 

**DMT10H072LFDF** 

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0.12  2<br>1.8<br>0.1  rT VGS = 4.5V, ID = 2.6A  YW (oT<br>1.6<br>VGS = 6.0V, ID = 4.0A  ID = 1mA<br>0.08  hy 1.4  S y<br>LIE<br>1.2<br>0.06<br>I F S ID = 250µA<br>1<br>0.04  4 VGS = 10.0V, ID = 4.5A  oS<br>aA 0.8  Pf] ttt tts<br>0.02  aan 0.6  CEP EEE<br>-50  -25  0  25  50  75  100  125  150  -50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Junction  Figire 8. Gate Threshold Variation vs. Junction<br>Temperature  Temperature<br>20  10000<br>18  VGS = 0V  Tt = SSS SSS f = 1MHz<br>16  eee || niee 1000   === ===<br>Ciss iss<br>14<br>12  100<br>10  Coss oss<br>8  10<br>6<br>TJ = 150 [o] C<br>4  TJ = 85 [o] C  1   Crss rss<br>2  TJ = 125 [o] C  TJ = 25 [o] C<br>TJ = -55 [o] C<br>0  | DW 0   a<br>0  0.3  0.6  0.9  1.2  1.5  0  10  20  30  40  50  60  70  80  90 100<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V) DS, DRAIN-SOURCE VOLTAGE (V) , DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current  Figure 10. Typical Junction Capacitance<br>10  100<br>R<br>DS(ON)<br>Limited  PW = 100µs W = 100µs  = 100µs<br>8  10<br>6  1<br>DC<br>PW = 10s W = 10s  = 10s<br>4  0.1<br>TJ(Max) = 150J(Max) = 150= 150 ℃ PW = 1s W = 1s  = 1s<br>2  VDS = 50V, ID = 4.5A  0.01  TSingle Pulse DUT on 1*MRP C = 25Single Pulse DUT on 1*MRP C = 25DUT on 1*MRP C = 25 ℃ PW = 100ms PW = 10ms W = 100ms PW = 10ms  = 100ms PW = 10ms PW = 10ms W = 10ms  = 10ms<br>Board<br>VGS = 10VGS = 10V = 10V PW = 1ms W = 1ms  = 1ms<br>0  0.001<br>0  1  2  3  4  5  0.1  1  10  100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V) DS, DRAIN-SOURCE VOLTAGE (V) , DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>)<br> , GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


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10000<br>f = 1MHz<br>= SSS SSS<br>1000   === ===<br>Ciss iss<br>100<br>Coss oss<br>10<br>1   Crss rss<br>a<br>0<br>0  10  20  30  40  50  60  70  80  90 100<br>VDS, DRAIN-SOURCE VOLTAGE (V) DS, DRAIN-SOURCE VOLTAGE (V) , DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>100<br>R<br>DS(ON)<br>Limited  PW = 100µs W = 100µs  = 100µs<br>10<br>1<br>DC<br>PW = 10s W = 10s  = 10s<br>0.1<br>TJ(Max) = 150J(Max) = 150= 150 ℃ PW = 1s W = 1s  = 1s<br>C = 25 = 25 ℃<br>0.01<br>TSingle Pulse DUT on 1*MRP C = 25Single Pulse DUT on 1*MRP C = 25DUT on 1*MRP C = 25 PW = 100ms PW = 10ms W = 100ms PW = 10ms  = 100ms PW = 10ms PW = 10ms W = 10ms  = 10ms<br>Board<br>VGS = 10VGS = 10V = 10V PW = 1ms W = 1ms  = 1ms<br>0.001<br>0.1  1  10  100<br>VDS, DRAIN-SOURCE VOLTAGE (V) DS, DRAIN-SOURCE VOLTAGE (V) , DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


5 of 8 **www.diodes.com** 

DMT10H072LFDF 

February 2019 © Diodes Incorporated 

Datasheet number: DS38574  Rev. 5 - 2 

**DMT10H072LFDF** 

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1  SSSSSeeSSSEESSSeee ne<br>Soo ee Corl<br>ee ee ee = _ oe D=0.9  [TL<br>D=0.5  D=0.7<br>BCE TTT mai<br>tt et alll<br>D=0.3<br>L op<br>0.1  e MU T a a A<br>ee<br>D=0.1<br>eee[OC ee iceOfdatitiemtecettiiomeeecetesse tiie buseeeatitiommeeatitcp bsus<br>ja eg oe oe oth<br>AA PP<br>D=0.05<br>Fa TT<br>GP ea<br>P AE<br>D=0.02  Sy | INEIE EIIE EIT E TT<br>0.01  elyi Lf<br>D=0.01  LA I A<br>breeeOO acy ai Sei eerie ssi|maatiil<br>|pt [|] TAN [TT] NATIT TTaTT eeTE PEiET RθJA (t) = r(t) * RθJA nll|<br>D=0.005  RθJA = 149 ℃ /W<br>Le IL TMT Duty Cycle, D = t1/t2  ill<br>D=Single Pulse<br>0.001  Pun cell FUME CIUNE TUNIC Il<br>1E-05  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMT10H072LFDF Datasheet number: DS38574  Rev. 5 - 2 

February 2019 © Diodes Incorporated 

**DMT10H072LFDF** 

## **Package Outline Dimension** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **U-DFN2020-6 (Type F)** 

**==> picture [450 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
U-DFN2020-6<br>A1 A3 (Type F)<br>A Dim  Min  Max  Typ<br>Seating Plane A  0.57 0.63 0.60<br>A1  0.00 0.05 0.03<br>A3  -  -  0.15<br>anne ===<br>b  0.25 0.35 0.30<br>D<br>D  1.95 2.05 2.00<br>e3 e4 D2  0.85 1.05 0.95<br>D2a 0.33 0.43 0.38<br>E  1.95 2.05 2.00<br>E2  1.05 1.25 1.15<br>k2<br>E2a  0.65 0.75 0.70<br>D2a z2 e  0.65 BSC<br>e2  0.863 BSC<br>D2 e3 0.70 BSC<br>E E2a E2 e4  0.325 BSC<br>k  0.37 BSC<br>k1 k1  0.15 BSC<br>k e2 L k2  0.36 BSC<br>z1<br>L  0.225 0.325 0.275<br>z  0.20 BSC<br>BEE =<br>z1  0.110 BSC<br>e b z2  0.20 BSC<br>z(4x) ee ——— All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**U-DFN2020-6 (Type F)** 

**==> picture [452 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
X3<br>Value<br>Dimensions<br>C X Y (in mm)<br>en a<br>C  0.650<br>X  0.400<br>X1  0.480<br>X2  0.950<br>X3  1.700<br>Y  0.425<br>a<br>Y3 Y2 Y1 Y4 Y1  0.800<br>Y2  1.150<br>Y3  1.450<br>X1 Y4  2.300<br>Lg:<br>Pin1<br>| X2 2 CU<br>**----- End of picture text -----**<br>


7 of 8 **www.diodes.com** 

DMT10H072LFDF Datasheet number: DS38574  Rev. 5 - 2 

February 2019 © Diodes Incorporated 

**DMT10H072LFDF** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2019, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMT10H072LFDF Datasheet number: DS38574  Rev. 5 - 2 

February 2019 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMT10H072LFDF-7/power-mosfet-n-channel-100-v-4-a-0047-ohm-udfn2020)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmt10h072lfdf-7/mosfet-n-ch-100v-4a-udfn2020/dp/3518393RL)
---

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