# Power MOSFET, N Channel, 100 V, 47.2 A, 0.0171 ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/DMT10H025LK3-13/power-mosfet-n-channel-100-v-472-a-00171-ohm-to
**SKU**: DMT10H025LK3-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: β¬0.2400
**Stock**: 1000+
**Lead Time**: 78 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.6W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150Β°C |
| Continuous Drain Current Id | 47.2A |
| Drain Source On State Resistance | 0.0171ohm |
| Gate Source Threshold Voltage Max | 3V |
## Datasheet
π [Download PDF](https://novapart.co/datasheet/farnell:3943851/)
**Green** ~~@~~
**DMT10H025LK3** [7
## **100V N-CHANNEL ENHANCEMENT MODE MOSFET**
## **Product Summary**
|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID **
**TC = +25Β°C**|
|100V|22m⦠@ VGS= 10V|47.2A|
||30m⦠@ VGS= 6.0V|40.4A|
||43.7m⦠@ VGS= 4.5V|33.5A|
## **Features**
- 100% Unclamped Inductive Switching β Ensures More Reliable and Robust End Application
- Low RDS(ON) β Minimizes Power Losses
- Low QG β Minimizes Switching Losses
- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)**
- **Halogen and Antimony Free. βGreenβ Device (Note 3)**
- **Qualified to AEC-Q101 Standards for High Reliability**
## **Description**
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
## **Mechanical Data**
- Case: TO252 (DPAK)
- Case Material: Molded Plastic, βGreenβ Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
## **Applications**
- Power Management Functions
- DC-DC Converters
- Terminal Connections: See Diagram
- Terminals: Finish β Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.33 grams (Approximate)
- Backlighting
Top View
Pin Out Top View
Equivalent Circuit
## **Ordering Information** (Note 4)
|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMT10H025LK3-13|TO252(DPAK)|2,500/Tape & Reel|
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporatedβs definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Greenβ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
## **Marking Information**
**==> picture [43 x 22] intentionally omitted <==**
**----- Start of picture text -----**
T1H025L
YYWW
**----- End of picture text -----**
= Manufacturerβs Marking T1H025L = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53)
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DMT10H025LK3 Document number: DS40039 Rev. 3 - 2
July 2018 Β© Diodes Incorporated
**DMT10H025LK3**
## **Maximum Ratings** (@TA = +25Β°C, unless otherwise specified.)
|**Maximum Ratingsgss** (@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|100|V|
|Gate-Source Voltage||VGSS|Β±20|V|
|Continuous Drain Current, VGS= 10V|TC= +25Β°C
TC= +70Β°C|ID|47.2
37.7|A|
|Pulsed Drain Current(10Β΅s Pulse, TC= +25Β°C, Package Limited)||IDM|185|A|
|Pulsed BodyDiode Forward Current(10Β΅s Pulse, TC= +25Β°C, Package Limited)||ISM|185|A|
|Maximum Continuous BodyDiode Forward Current (Note 6)||IS|2.6|A|
|Avalanche Current, L = 0.1mH||IAS|15.8|A|
|Avalanche Energy, L = 0.1mH||EAS|12.5|mJ|
## **Thermal Characteristics** (@TA = +25Β°C, unless otherwise specified.)
|**Thermal Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)||PD|2.6|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RΞΈJA|48|Β°C/W|
|Total Power Dissipation (Note 6)||PD|83|W|
|Thermal Resistance, Junction to Case (Note 6)||RΞΈJC|1.5|Β°C/W|
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|Β°C|
**Electrical Characteristics** (@TA = +25Β°C, unless otherwise specified.)
|**Electrical Characteristics **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**
~~__βββ_ββββββ~~|**Symbol**
~~__βββ_ββββββ~~|**Min**
~~__βββ_ββββββ~~|**Typ**
~~__βββ_ββββββ~~|**Max**
~~__βββ_ββββββ~~|**Unit**
~~__βββ_ββββββ~~|**Test Condition**
~~__βββ_ββββββ~~|
|**OFF CHARACTERISTICS**(Note 7)
~~__βββ_ββββββ~~
~~ββ~~|||||||
|Drain-Source Breakdown Voltage
~~__βββ_ββββββ~~
~~ββ~~|BVDSS
~~__βββ_ββββββ~~
|100
~~__βββ_ββββββ~~
|β
~~__βββ_ββββββ~~
|β
~~__βββ_ββββββ~~
|V
~~__βββ_ββββββ~~
|VGS= 0V,ID= 1mA
~~__βββ_ββββββ~~
|
|Zero Gate Voltage Drain Current
~~ββ~~|IDSS
|β
|β
|1
|Β΅A
|VDS= 80V,VGS= 0V
|
|Gate-Source Leakage
~~ββ~~|IGSS
|β
|β
|Β±100
|nA
|VGS= Β±20V,VDS= 0V
|
|**ON CHARACTERISTICS**(Note 7)
~~ββ~~|||||||
|Gate Threshold Voltage
|VGS(TH)
~~SSS~~|1
~~SSS~~|β
~~SSS~~|3
~~SS EE~~|V
~~EE~~|VDS= VGS,ID= 250Β΅A
~~EE~~|
|Static Drain-Source On-Resistance
~~a~~|RDS(ON)
~~a~~
~~SSS~~|β
~~a~~
~~SSS~~|17.1
~~a~~
~~SSS~~|22
~~a~~
~~SS EE~~|mβ¦
~~a~~
~~EE~~|VGS= 10V,ID= 20A
~~a~~
~~EE~~|
|||β
~~a~~
~~SSS~~|21.4
~~a~~
~~SSS~~|30
~~a~~
~~SS EE~~||VGS= 6V,ID= 20A
~~a~~
~~EE~~|
|||β
~~a~~
~~SSS~~|28.3
~~a~~
~~SSS~~|43.7
~~a~~
~~SS EE~~||VGS= 4.5V,ID= 20A
~~a~~
~~EE~~|
|Diode Forward Voltage
~~a~~|VSD
~~a~~
~~SSS~~|β
~~a~~
~~SSS~~|β
~~a~~
~~SSS~~|1.3
~~a~~
~~SS EE~~|V
~~a~~
~~EE~~|VGS= 0V,IS= 20A
~~a~~
~~EE~~|
|**DYNAMIC CHARACTERISTICS**(Note 8)
~~SSS SS EE~~
~~a~~|||||||
|Input Capacitance
~~ββββββββ~~|Ciss
~~ββββββββ~~|β
~~ββββββββ~~|1477
~~ββββββββ~~
~~a~~|β
~~ββββββββ~~
~~a~~|pF
~~ββββββββ~~
~~a~~|VDS= 50V, VGS= 0V
f = 1MHz
~~ββββββββ~~|
|Output Capacitance
~~ββββββββ~~|Coss
~~ββββββββ~~|β
~~ββββββββ~~|263
~~ββββββββ~~
~~a~~|β
~~ββββββββ~~
~~a~~|||
|Reverse Transfer Capacitance
~~ββββββββ~~|Crss
~~ββββββββ~~|β
~~ββββββββ~~|20
~~ββββββββ~~
~~a~~|β
~~ββββββββ~~
~~a~~|||
|Gate Resistance|RG|β|1.3
~~a~~|β
~~a~~|β¦
~~a~~|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge|QG|β|21|β|nC|VDD= 50V, ID= 20A,
VGS= 10V|
|Gate-Source Charge
~~_βββ~~|QGS
~~_βββ~~|β
~~_βββ~~|5.7
~~_βββ~~|β
~~_βββ~~|||
|Gate-Drain Charge
~~_βββ~~
~~_βββ~~|QGD
~~_βββ~~|β
~~_βββ~~|3.8
~~_βββ~~|β
~~_βββ~~|||
|Turn-On DelayTime
~~_βββ~~
~~_βββ~~|tD(ON)
~~_βββ~~|β
~~_βββ~~|6.3
~~_βββ~~|β
~~_βββ~~|ns|VDD= 50V, VGS= 10V,
ID= 20A, RG= 6β¦|
|Turn-On Rise Time
~~_βββ~~|tR|β|9.4|β|||
|Turn-Off DelayTime
~~_βββ~~|tD(OFF)
~~a~~|β
~~ee~~|16.7
~~ee~~|β
~~ee~~|||
|Turn-Off Fall Time
~~_βββ~~|tF
~~a~~|β
~~ee~~|8.2
~~ee~~|β
~~ee~~|||
|Reverse RecoveryTime
~~_βββ~~
~~ββββ~~|tRR
~~ββββ~~
~~a~~|β
~~ββββ~~
~~ee~~|38.7
~~ββββ~~
~~ee~~|β
~~ββββ~~
~~ee~~|ns
~~ββββ~~|IF= 20A, di/dt = 100A/Β΅s
~~ββββ~~|
|Reverse RecoveryCharge
~~ββββ~~|QRR
~~ββββ~~
~~a~~|β
~~ββββ~~
~~ee~~|53.7
~~ββββ~~
~~ee~~|β
~~ββββ~~
~~ee~~|nC
~~ββββ~~||
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMT10H025LK3 Document number: DS40039 Rev. 3 - 2
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**DMT10H025LK3**
**==> picture [506 x 670] intentionally omitted <==**
**----- Start of picture text -----**
30.0 30
VGS = 6.0V VDS = 5.0V
25.0 VGS = 4.5V 25
VGS = 8.0V
20.0 feo 20 e ee
VGS = 10.0V
15.0 po 15 Seeeeeee in
VGS = 4.0V
10.0 T/| | VGS = 3.8V | 10 Seeeeeeeje
β Seeeeee TJ = 150 β
5.0 VGS = 3.2V VGS = 3.4V VGS = 3.6V 5 TJ = 125 β
a TJ = 85 β TJ ae = 25 β
0.0 _ 0 ffBy TJ = -55 β
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic
0.024 0.2
0.022
VGS = 6.0V 0.15
0.020
0.1
0.018
0.05
0.016 VGS = 10V ID = 20A
0.014 0
0 5 10 15 20 2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and Figure 4. Typical Transfer Characteristic
Gate Voltage
0.05 2.2
VGS = 10V
0.045 2 VGS = 10V, ID = 20A
0.04 e TJ = 150 β e 1.8
0.035 e r 1.6 n n
TJ = 125 β
0.03
pf ft | | | | 1.4 ena
0.025 TJ = 85 β
1.2
Ee
0.02 Foe [EE] ar
0.015 TJ = 25 β 1 VGS = 6.0V, ID = 20A
0.8
0.01 TJ = -55 β
0.005 PR ESSE 0.6 a a
0 PE -A} 0.4 FR
0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( β )
Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Temperature
Temperature
, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID
)
) ο
ο
, DRAIN-SOURCE ON-RESISTANCE (
, DRAIN-SOURCE ON-RESISTANCE (
DS(ON)
DS(ON) R
R
)
ο
(NORMALIZED)
, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE
DS(ON)
DS(ON) R
R
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DMT10H025LK3 Document number: DS40039 Rev. 3 - 2
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**DMT10H025LK3**
**==> picture [503 x 672] intentionally omitted <==**
**----- Start of picture text -----**
0.06 3
0.055 Pot | | | TT 2.8 PF | | | |
0.05 2.6
ID = 1mA
0.045 eea 2.4 SemS
0.04 2.2
a TESST
0.035 VGS = 6.0V, ID = 20A 2 ID = 250ΞΌA
0.03 Se ar 1.8 a SNee
β Z Z Ne
0.025 a a 1.6 E R
0.02 1.4
VGS = 10V, ID = 20A
0.015 ao << β 1.2 TFET
0.01 es ee 1 P| | | cE
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( β ) TJ, JUNCTION TEMPERATURE ( β )
Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction
Temperature
30 10000
VGS = 0V f = 1MHz
25 I S==5-==2n Ciss
1000
S S S
20
| βββββ
Coss
15 100
MT e s
10 TJ = 150 [o] C
ff Ne e
TJ = 125 [o] C 10 S Crss a
5 TJ = 85 [o] C 7, H i} ===>ββ =Saaaa
TJ = 25 [o] C Aff a
TJ = -55 [o] C
0 ZT) 1 PEEPtt ttt
0.2 0.4 0.6 0.8 1 1.2 0 10 20 30 40 50 60 70 80 90 100
VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance
10 1000
RDS(ON) PW = 1Β΅s
Limited
8 100
6 10
PW = 10Β΅s
4 1 PW = 100Β΅s
VDS = 50V, ID = 20A TJ(Max) = 150 β PW = 1ms
TC = 25 β PW = 10ms
2 0.1 Single Pulse DUT on Infinite PW
Heatsink DC
0 0.01 VGS = 10V |
0 2 4 6 8 10 12 14 16 18 20 22 0.1 1 10 100 1000
Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area
)
ο
, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)
GS(TH)
V
DS(ON)
R
, SOURCE CURRENT (A)
IS
, JUNCTION CAPACITANCE (pF)
T
C
(V)
GS
V
, DRAIN CURRENT (A)
ID
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**DMT10H025LK3**
**==> picture [404 x 236] intentionally omitted <==**
**----- Start of picture text -----**
1
a S D=0.7 eerae ee eeeel
D=0.5 a
a cl TT erm
ON
ee D=0.3 ||
0.1 a / A | D=0.9 || |
pH D=0.1 Aee e [et] Al a OOr 0
ee 8 8 0
a D=0.05 a a a
Oe? A |
A E
D=0.02
0.01 Ap ANII | TNTE | EEEETE ETT TI TT
Sesa a aa7 oaeee afe aeseeade eee de
oR D=0.01 SH OE
|_| a
| D=0.005 e e ee RΞΈJC(t) = r(t) * RΞΈJC ill
D=Single Pulse RΞΈJC = 1.5 β /W
Duty Cycle, D = t1 / t2
0.001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE
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**DMT10H025LK3**
## **Package Outline Dimensions**
Please see http://www.diodes.com/package-outlines.html for the latest version.
## **TO252 (DPAK)**
**==> picture [463 x 341] intentionally omitted <==**
**----- Start of picture text -----**
E
A
b3
7°± 1° TO252 (DPAK)
c Dim Min Max Typ
L3
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
D b 0.64 0.88 0.783
A2 H b2 0.76 1.14 0.95
L4 b3 5.21 5.46 5.33
c 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21 - -
e - - 2.286
e E 6.45 6.70 6.58
b(3x)
E1 4.32 - -
ht b2(2x) H 9.40 10.41 9.91
0.508 L 1.40 1.78 1.59
Gauge Plane L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
E1 D1 Seating Plane a 0Β° 10Β° -
All Dimensions in mm
L
A1
2.74REF
Ge Be
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
a
**----- End of picture text -----**
## **TO252 (DPAK)**
**==> picture [124 x 154] intentionally omitted <==**
**----- Start of picture text -----**
on X1
Y1
Y2
Ld C
Y
oot X
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**==> picture [107 x 67] intentionally omitted <==**
**----- Start of picture text -----**
Dimensions Value (in mm)
C 4.572
X 1.060
X1 5.632
Y 2.600
Y1 5.700
Y2 10.700
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**DMT10H025LK3**
## **IMPORTANT NOTICE**
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.
## **LIFE SUPPORT**
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
- A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright Β© 2018, Diodes Incorporated
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DMT10H025LK3 Document number: DS40039 Rev. 3 - 2
July 2018 Β© Diodes Incorporated
## Links
- [View this product on Novapart](https://novapart.co/products/DMT10H025LK3-13/power-mosfet-n-channel-100-v-472-a-00171-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmt10h025lk3-13/mosfet-n-ch-100v-47-2a-to-252/dp/3943851)
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