# Power MOSFET, N Channel, 100 V, 29.5 A, 8000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943844/)

**URL**: https://novapart.co/products/DMT10H010LSS-13/power-mosfet-n-channel-100-v-295-a-8000-ohm-soic
**SKU**: DMT10H010LSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5390
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 29.5A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 1.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943844/)

**DMT10H010LSS** sd 

**100V N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON) Max**|**ID MAX**<br>**TC = +25°C**|
|---|---|---|
|100V|9.5mΩ @ VGS= 10V|29.5A|



## **Features and Benefits** 

- 100% Unclamped Inductive Switch (UIS) Test in Production 

- High Conversion Efficiency 

- Low RDS(ON) – Minimizes On State Losses 

- Low Input Capacitance 

- Fast Switching Speed 

## **Description and Applications** 

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.074 grams (Approximate) 

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D<br>S |_| | | [{|] D<br>S | | | || | D<br>G<br>S D<br>G D<br>rT rT S<br>Top View  Equivalent circuit<br>Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMT10H010LSS-13|SO-8|2,500/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

P} 8 tt tte 5 = Manufacturer’s Marking T1010LS = Product Type Marking Code **T1010LS** YYWW = Date Code Marking YY or YY = Year (ex: 18 = 2018) **YY WW** WW = Week (01 to 53) O- | FP] 1 Ly Ly Ed 4 

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DMT10H010LSS Document number: DS38035 Rev.6 - 2 

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**DMT10H010LSS** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|100|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6), VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|11.5<br>9.2|A|
||Steady<br>State|TC= +25°C<br>TC= +100°C|ID|29.5<br>18.6|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|75|A|
|Maximum Continuous BodyDiode Forward Current(Note 6)|||IS|3|A|
|Avalanche Current(Note 8),L=0.3mH|||IAS|10|A|
|Avalanche Energy (Note 8),L=0.3mH|||EAS|15|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power(Note 5)||PD|1.4|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RJA|90|°C/W|
||t<10s||48.8||
|Total Power Dissipation(Note 6)||PD|1.9|W|
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RJA|66|°C/W|
||t<10s||35.8||
|Thermal Resistance,Junction to Case(Note 6)||RJC|10.1|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|100|—|—|V|VGS= 0V,ID= 1mA|
|Zero Gate Voltage Drain Current|IDSS|—|—|1|µA|VDS= 80V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS=20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**<br>~~—~~|||||||
|Gate Threshold Voltage<br>~~==~~|VGS(TH)<br>~~==~~|1.4<br>~~==~~|1.9<br>~~==~~|2.8<br>~~==~~|V<br>~~==~~|VDS= VGS,ID= 250µA<br>~~==—~~|
|Static Drain-Source On-Resistance<br>~~==~~|RDS(ON)<br>~~==~~|—<br>~~==~~|8<br>~~==~~|9.5<br>~~==~~|mΩ<br>~~==~~|VGS= 10V,ID= 13A<br>~~==—~~|
|||—<br>~~==~~|9<br>~~==~~|12<br>~~==~~||VGS= 6V,ID= 13A<br>~~==—~~|
|||—<br>~~==~~|10<br>~~==~~|14.5<br>~~==~~||VGS= 4.5V,ID= 5A<br>~~==—~~|
|Diode Forward Voltage<br>~~==~~|VSD<br>~~==~~|—<br>~~==~~|0.8<br>~~==~~|1.3<br>~~==~~|V<br>~~==~~|VGS= 0V,IS= 13A<br>~~==—~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~—~~|||||||
|Input Capacitance<br><br>~~——~~|Ciss<br><br>~~——~~|—<br><br>~~——~~|4166<br><br>~~——~~|—<br><br>~~——~~|pF<br><br>~~——~~|VDS= 50V, VGS= 0V<br>f = 1MHz<br>~~—~~<br>~~——~~|
|Output Capacitance<br>~~——~~|Coss<br>~~——~~|—<br>~~——~~|764<br>~~——~~|—<br>~~——~~|||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~——~~|—<br>~~——~~|44<br>~~——~~|—<br>~~——~~|||
|Gate Resistance<br>~~——~~|Rg<br>~~——~~|—<br>~~——~~|2<br>~~——~~|—<br>~~——~~|Ω<br>~~——~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~——~~|
|Total Gate Charge|Qg|—|58.4|—|nC<br>~~ee~~|VDD= 50V, ID= 13A,<br>VGS= 10V<br>~~ee~~|
|Gate-Source Charge|Qgs|—|11.4|—|||
|Gate-Drain Charge<br>~~—<—~~|Qgd|—|14.2|—<br>~~ee~~|||
|Turn-On DelayTime<br>~~—<—~~|tD(ON)|—|11.6|—<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|VDD= 50V, VGS= 10V,<br>ID= 13A, Rg= 6Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—~~|tR|—|14.1|—<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—<—~~|tD(OFF)|—|42.9<br>~~a~~|—<br>~~ee~~<br>~~e~~|||
|Turn-Off Fall Time<br>~~—<—~~|tF|—|22<br>~~a~~|—<br>~~ee~~<br>~~e~~|||
|Reverse RecoveryTime<br>~~—<—~~<br>~~a~~|tRR<br>~~a~~|—<br>~~a~~|49.8<br>~~a~~<br>~~a~~|—<br>~~ee~~<br>~~a~~<br>~~e~~|ns<br>~~ee~~<br>~~a~~<br>~~ee~~|IF= 13A, di/dt = 100A/µs<br>~~ee~~<br>~~a~~|
|Reverse RecoveryCharge<br>~~a~~|QRR<br>~~a~~|—<br>~~a~~|85.1<br>~~a~~<br>~~a~~|—<br>~~a~~<br>~~e~~|nC<br>~~a~~<br>~~ee~~||



- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 

   7. Short duration pulse test used to minimize self-heating effect. 

   8. Guaranteed by design. Not subject to product testing. 

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**DMT10H010LSS** 

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30.0  30<br>VGS=4.0V VDS=5V<br>25.0  25<br>VGS=4.5V<br>VGS=3.5V<br>20.0  Ko) VGS=5.0V 20 f p<br>15.0  VGS=6.0V 15<br>VGS=10.0V<br>10.0  10 125 ℃<br>85 ℃<br>150 ℃<br>5.0  VGS=3.0V 5 25 ℃<br>175 ℃<br>-55 ℃<br>0.0  0<br>0 0.5 1 1.5 2 2.5 3 1 2 3 4 5 6<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.012 0.05<br>0.011<br>0.01 PL > >> Pe et 0.04 ID = 13A<br>VGS = 4.5V<br>0.009 CO 0.03 AT T<br>0.008 VGS = 6V<br>0.007 VGS = 10V 0.02 ID = 5A<br>0.006<br>FP 0.01 A c et<br>0.005 PT ttt ELL ———<br>0.004 CCCCEEECe 0 -L LCCC<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.02 2.5<br>VGS = 10V<br>0.018<br>VGS = 10V, ID = 13A<br>0.016 PoPf | LE| ttEEEtfLE 150 ℃ 2 Pt tf |<br>VGS = 6V, ID = 13A<br>0.014<br>0.012 125 ℃ 1.5<br>————— — BE RR.<br>0.01 85 ℃<br>0.008 1 VGS = 4.5V, ID = 5A<br>25 ℃<br>0.006<br>0.004 SEEEEREPE E E -55 ℃ 0.5 Le e et<br>0.002<br>0 SE E 0 Tittyyt<br>0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE<br>RDS(ON) RDS(ON)<br>**----- End of picture text -----**<br>


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**DMT10H010LSS** 

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0.02 4<br>0.018 TTT TT TT 3.5 ptt<br>0.016<br>3<br>0.014 pf VGS  be = 4.5V, ID = 5A PittT ET Ty TT<br>0.012 VGS = 6V, ID = 13A V o 2.5 pi tTte ET T Ty<br>ID=1mA<br>0.01 E S 2<br>0.008 Se a4 a an 1.5 SSoe ID=250μA<br>0.006<br>VGS = 10V, ID = 13A 1<br>0.004 B eer SSSNY<br>0.5<br>0.002 a pj itt}<br>0 a 0 PETE tt<br>ET Et yt<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>30 10000<br>25 VGS=0V, TJ=125 ℃ Ciss<br>1000<br>20 VGS=0V, TJ=150 ℃ a<br>rh — — Coss ——<br>VGS=0V, TJ=175 ℃<br>15 HH, 100<br>HH anes<br>10 I VGS=0V, TJ=85 ℃ == Crss =<br>10<br>5 ILA VGS=0V, TJ=25 ℃ S S<br>LL ——————————— f=1MHz<br>VGS=0V, TJ=-55 ℃<br>0 LIT a 1  | | ft ft |<br>vs ae By SERRA<br>0 0.3 0.6 0.9 1.2 1.5 0 20 40 60 80 100<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs Current Figure 10. Typical Junction Capacitance<br>100<br>10 RLimitedDS(on)<br>10<br>8<br>DC<br>1<br>6 et | | YE “tllll PW = 10s RRSNa AAANUAL<br>PW = 1s<br>PW = 100ms<br>0.1<br>4 [lye | I PW = 10ms<br>T J(m ax)= 150°C PW = 1ms<br>2 -, VDS = 50V, ID = 13A 7 0.01 = T A = 25°C aaHE TISAIay PW  “ERE = 100µs<br>VGS = 10V<br>Single Pulse<br>0 0.001 = DUT on 1 * MRP Board OU<br>0.01 0.1 1 10 100 1000<br>0 10 20 30 40 50 60<br>VDS , DRAIN-SOURCE VOLTAGE (V)<br>Qg (nC) Figure 12 SOA, Safe Operation Area<br>Figure 11.  Gate Charge<br>, DRAIN CURRENT (A)<br>D<br>I<br> GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH),<br>V<br>DS(ON)<br>R<br> SOURCE CURRENT (A)<br>IS,<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

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**DMT10H010LSS** 

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1 D = 0.9<br>SSSSSS<br>SS D = 0.7<br>D = 0.5<br>Ey STHTT ceeSec emeterTTTttttt<br>PT D = 0.3 TTT ETETT<br>UU ert TT LLIN |<br>0.1<br>Ce D = 0.1 Se OZ ttt<br>es a a><<br>a a a a es 2 0 OO 8<br>D = 0.05<br>FAI eT<br>Seea a 7 2<br>D = 0.02<br>TT ANMESe GAATI AAT GMUTHIOMUON OMIM OH I HT<br>0.01 IMLATTE<br>Ee D = 0.01 Ee AIEVUUIIME TEITETTTE_U<br>ee<br>eo D = 0.005 ee R JA (t) = r ee (t) * R JA TTT)<br>ao R  = 90 ° C/W LT<br>JA<br>D = Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMT10H010LSS** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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**----- Start of picture text -----**<br>
SO-8<br>SO-8<br>E 7 Dim  Min  Max  Typ<br>A  1.40  1.50  1.45<br>A1  0.10  0.20  0.15<br>1<br>b  0.30  0.50  0.40<br>c  0.15  0.25  0.20<br>D  4.85  4.95  4.90<br>E  5.90 6.10 6.00<br>b<br>E1 E1  3.80 3.90 3.85<br>h E0  3.85 3.95 3.90<br>Q e  --  --  1.27<br>7° h  -  --  0.35<br>c L   0.62  0.82  0.72<br>A 4°± 3° Q 0.60  0.70  0.65<br>All Dimensions in mm<br>G auge Plane<br>S eating Plane<br>L<br>e A1 E0<br>D<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SO-8<br>podoc X1<br>Y1<br>Y<br>Lata<br>JOO C X<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>C  1.27<br>X  0.802<br>X1  4.612<br>Y  1.505<br>Y1  6.50<br>**----- End of picture text -----**<br>


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**DMT10H010LSS** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

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