# Power MOSFET, P Channel, 20 V, 3.3 A, 0.07 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943840RL/)

**URL**: https://novapart.co/products/DMS2085LSD-13/power-mosfet-p-channel-20-v-33-a-007-ohm-soic
**SKU**: DMS2085LSD-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0900
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.3A |
| Drain Source On State Resistance | 0.07ohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943840RL/)

**DMS2085LSD** 

## **P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE** 

## **Product Summary** 

|**MOSFET**<br>**BVDSS**<br>**RDS(on) Max**<br>**ID**<br>-20V<br>85mΩ@VGS= -10V<br>-3.3A<br>125mΩ@VGS= -4.5V<br>-2.8A<br>**SCHOTTKY DIODE**<br>**VR**<br>**VF Max**<br>**IO**<br>20V<br>400mV@IF= 0.5A<br>1.0A<br>470mV@IF= 1.0A|**MOSFET**<br>**BVDSS**<br>**RDS(on) Max**<br>**ID**<br>-20V<br>85mΩ@VGS= -10V<br>-3.3A<br>125mΩ@VGS= -4.5V<br>-2.8A<br>**SCHOTTKY DIODE**<br>**VR**<br>**VF Max**<br>**IO**<br>20V<br>400mV@IF= 0.5A<br>1.0A<br>470mV@IF= 1.0A|**MOSFET**<br>**BVDSS**<br>**RDS(on) Max**<br>**ID**<br>-20V<br>85mΩ@VGS= -10V<br>-3.3A<br>125mΩ@VGS= -4.5V<br>-2.8A<br>**SCHOTTKY DIODE**<br>**VR**<br>**VF Max**<br>**IO**<br>20V<br>400mV@IF= 0.5A<br>1.0A<br>470mV@IF= 1.0A|
|---|---|---|
|**MOSFET**|||
|**BVDSS**|**RDS(on) Max**|**ID**|
|-20V|85mΩ@VGS= -10V|-3.3A|
||125mΩ@VGS= -4.5V|-2.8A|
|**SCHOTTKY DIODE**|||
|**VR**|**VF Max**|**IO**|
|20V|400mV@IF= 0.5A|1.0A|
||470mV@IF= 1.0A||



## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

## **Features and Benefits** 

   - Low  Input Capacitance 

   - MOSFET with Low  RDS(ON) – Minimize Conduction Losses 

   - Schottky Diode with Low Forward Voltage Drop 

   - Fast Switching Speed 

   - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

      - 

      - **https://www.diodes.com/products/automotive/automotive products/.** 

   - **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/** 

- DC-DC Converters 

- Power Management Functions 

- Backlighting 

## **Mechanical Data** 

- Package: SO-8 

- Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 O **e3** 

- Weight: 0.074 grams (Approximate) 

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A EI K<br>A K<br>> S B D<br>G u H D<br>Top View  Top View<br>**----- End of picture text -----**<br>


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A<br>D<br>G<br>K<br>S<br>Q1 P-Channel MOSFET D1 Schottky Diode<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|
|||||
|**Part Number**|**Package**|**Packing**||
|||**Qty. **|**Carrier**|
|DMS2085LSD-13|SO-8|2,500|Tape &Reel|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

1 of 8 **www.diodes.com** 

DMS2085LSD Document number: DS36926  Rev. 4 - 2 

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**DMS2085LSD** 

## **Marking Information** 

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8 5<br>FETT|<br>S2085LD<br>YY WW<br>1 4<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking S2085LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 21 = 2021) WW = Week (01 to 53) 

## **Maximum Ratings – P-CHANNEL MOSFET – Q1** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-20|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-3.3<br>-2.7|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|-4.3<br>-3.4|A|
|Maximum BodyDiode Forward Current (Note 6)|||IS|-1.5|A|
|Pulsed Drain Current (10µs Pulse, DutyCycle = 1%)|||IDM|-11.2|A|
|Avalanche Current (Note 7) L = 0.1mH|||IAS|-12|A|
|Avalanche Energy (Note 7)L = 0.1mH|||EAS|7|mJ|



## **Maximum Ratings – SCHOTTKY – D1** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratings – SCHOTTKY – D1gs – SCHOTTKY – D1s – SCHOTTKY – D1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – SCHOTTKY – D1gs – SCHOTTKY – D1s – SCHOTTKY – D1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – SCHOTTKY – D1gs – SCHOTTKY – D1s – SCHOTTKY – D1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – SCHOTTKY – D1gs – SCHOTTKY – D1s – SCHOTTKY – D1**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|20|V|
|Average Rectified Output Current (Note 7, t<10s)|IO|1|A|
|Peak Repetitive Forward Current (Note 7, t<10s)|IFRM|2|A|
|Non-Repetitive Peak Forward Surge Current  (Note 7, t<10s)<br>Single Half Sine-Wave Superimposed on Rated Load|IFSM|20|A|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.1|W|
||TA= +70°C||0.7||
|Thermal Resistance, Junction to Ambient (Note 5)|SteadyState|RJA|108|°C/W|
||t<10s||65||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.8|W|
||TA= +70°C||1.0||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|78|°C/W|
||t<10s||50||
|Thermal Resistance, Junction to Case (Note 6)||RθJC|22||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

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DMS2085LSD Document number: DS36926  Rev. 4 - 2 

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**DMS2085LSD** 

## **Electrical Characteristics P-Channel Q1** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics P-Channel** **Q1** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**<br>~~Ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~GGG~~|BVDSS<br>~~GGG~~|-20<br>~~GGG~~|<br>~~GGG~~<br>~~CO~~|<br>~~CO~~|V<br>~~GO~~<br>~~GO~~|VGS= 0V, ID= -250µA<br>~~GO~~<br>~~GO~~|
|Zero Gate Voltage Drain Current<br>~~GG~~|IDSS<br>~~GG~~|<br>~~GG~~|<br>~~GG~~<br>~~CO~~<br>~~CO~~|-1<br>~~GG~~<br>~~CO~~<br>~~CO~~|µA<br>~~GG~~<br>~~GO~~<br>~~GO~~|VDS= -20V, VGS= 0V<br>~~GG~~<br>~~GO~~<br>~~GO~~|
|Gate-Source Leakage<br>~~GD~~|IGSS<br>~~GD~~|<br>~~GD~~|<br>~~CO~~<br>~~GD~~<br>~~CO~~|100<br>~~CO~~<br>~~GD~~<br>~~CO~~|nA<br>~~GO~~<br>~~GD~~<br>~~GO~~|VGS= ±20V, VDS= 0V<br>~~GO~~<br>~~GD~~<br>~~GO~~|
|**ON CHARACTERISTICS(Note 8)**<br>~~CO~~<br>~~GO~~|||||||
|Gate Threshold Voltage|VGS(th)<br>~~re~~|-0.5<br>~~re~~|-1.5<br>~~ee~~|-2.2<br>~~ee~~|V<br>~~eee~~|VDS= VGS, ID= -250µA<br>~~eee~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~re~~|<br>~~a~~<br>~~re~~|70<br>~~a~~<br>~~ee~~|85<br>~~ee~~|mΩ<br>~~eee~~<br>~~GO~~|VGS= -10V, ID= -3.05A<br>~~Pp~~<br>~~eee~~|
|||<br>~~a ~~<br>~~re~~<br>~~GG~~|100<br> ~~a~~<br>~~ee~~<br>~~GG~~|125<br>~~ee~~<br>~~GG~~||VGS= -4.5V, ID= -1.50A<br>~~Pp~~<br>~~eee~~<br>~~GO~~|
|Diode Forward Voltage<br>~~Gs~~|VSD<br>~~re~~<br>~~Gs~~|<br>~~re ~~<br>~~Gs~~<br>~~GG~~|-0.8<br> ~~ee ~~<br>~~Gs~~<br>~~GG~~|-1.0<br> ~~ee~~<br>~~Gs~~<br>~~GG~~|V<br>~~eee~~<br>~~Gs~~<br>~~GO~~|VGS= 0V, IS= -1.0A<br>~~eee~~<br>~~Gs~~<br>~~GO~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~GG~~<br>~~GO~~|||||||
|Input Capacitance<br>~~a~~|Ciss<br>~~a~~|<br>~~a~~|353<br>~~a~~|<br>~~a~~|pF|VDS= -15V, VGS= 0V<br>f = 1.0MHz|
|Output Capacitance|Coss||49||||
|Reverse Transfer Capacitance|Crss||41||||
|Gate Resistance<br>~~pf~~|RG<br>~~pf~~|<br>~~pf~~|6.2<br>~~pf~~|<br>~~pf~~|Ω<br>~~pf~~|VDS= 0V, VGS= 0V, f = 1.0MHz<br>~~pf~~|
|Total Gate Charge(VGS= -4.5V)|Qg||3.7||nC|VDS= -15V, ID= -3A|
|Total Gate Charge(VGS= -10V)<br>~~Ge~~|Qg<br>~~Ge~~|<br>~~Ge~~|7.8<br>~~Ge~~|<br>~~Ge~~|||
|Gate-Source Charge<br>~~GO~~|Qgs<br>~~GO~~|<br>~~GO~~|1.1<br>~~GO~~|<br>~~GO~~|||
|Gate-Drain Charge<br>~~ee~~|Qgd<br>~~ee~~|<br>~~ee~~|1.3<br>~~ee~~|<br>~~ee~~|||
|Turn-On DelayTime<br>~~Ge~~<br>~~GO~~|tD(on)<br>~~Ge~~<br>~~GO~~|<br>~~Ge~~<br>~~GO~~|3.3<br>~~Ge~~<br>~~GO~~|<br>~~Ge~~<br>~~GO~~|ns<br>~~fo~~<br>~~GO~~|VDS= -15V,RL= 15Ω<br>VGS= -10V, RG= 6Ω<br>~~fo~~<br>~~GO~~|
|Turn-On Rise Time<br>~~GO~~|tr<br>~~GO~~|<br>~~GO~~|3.0<br>~~GO~~|<br>~~GO~~|||
|Turn-Off DelayTime<br>~~GO~~|tD(off)<br>~~GO~~|<br>~~GO~~|14<br>~~GO~~|<br>~~GO~~|||
|Turn-Off Fall Time<br>~~GO~~<br>~~a~~|tf<br>~~GO~~<br>~~a~~|<br>~~GO~~<br>~~a~~<br>~~GC~~|6.8<br>~~GO~~<br>~~a~~<br>~~GC~~|<br>~~GO~~<br>~~a~~<br>~~GC~~|||
|BodyDiode Reverse RecoveryTime<br>~~Gs~~|trr<br>~~Gs~~|<br>~~Gs~~<br>~~GC~~|33<br>~~Gs~~<br>~~GC~~|<br>~~Gs~~<br>~~GC~~|ns<br>~~Gs~~<br>~~GO~~|IS= -3.05A, dI/dt = 100A/μs<br>~~Gs~~<br>~~GO~~|
|BodyDiode Reverse RecoveryCharge<br>~~pO~~|Qrr<br>~~pO~~|<br>~~GC~~<br>~~pO~~|46<br>~~GC~~<br>~~pO~~|<br>~~GC~~<br>~~pO~~|nC<br>~~GO~~<br>~~pO~~|IS= -3.05A, dI/dt = 100A/μs<br>~~GO~~<br>~~pO~~|



Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 

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DMS2085LSD Document number: DS36926  Rev. 4 - 2 

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**DMS2085LSD** 

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15.0 10<br>VGS= -10V VGS= -4.0V VDS= -5.0V<br>9<br>VGS= -4.5V 7 J fd<br>12.0 VGS= -3.5V 8<br>7<br>VGS= -3.0V<br>9.0 6<br>5<br>ef<br>6.0 4<br>VGS= -2.5V<br>3<br>ff TEA<br>3.0 f— VGS= -2.0V 2 TA = 150℃ T A  = 85℃ TT<br>VGS= -1.8V 1 T A  = 125℃ TA = 25℃<br>0.0 0 TTAA = -55C = -55℃<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.2<br>0.15<br>VGS= -4.5V<br>0.18<br>CEE) 0.16 GREE<br>0.12 TA = 125℃ TA = 150℃<br>0.14<br>VGS = -4.5V 0.12<br>0.09 —— ae<br>0.1 T A  = 85℃<br>0.08<br>0.06 TA = 25℃<br>ES VGS = -10V<br>0.06<br>TA = -55℃<br>0.04<br>0.03<br>St RRREREE<br>0.02<br>CEE) 0 EREREERL-<br>0 0 1 2 3 4 5 6 7 8 9 10<br>0 3 6 9 12 15<br>ID, DRAIN SOURCE CURRENT (A) ID, DRAIN SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current Figure 4. Typical On-Resistance vs.  Drain Current<br>and Gate Voltage and Temperature<br>1.6 0.15<br>VGS = -4.5V,<br>ID = -5A 0.12 V GS  = -4.5V, I D  = -5A<br>1.2 ZA VGS = -10V,<br>dita ID = -5A 0.09 HE ee<br>0.06<br>0.8 rae mea  VGS = -10V, ID = -5A<br>eet} ier<br>0.4 TATA, 0.030 PEEECEP«At<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. On-Resistance Variation with Temperature Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>(Ω) (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>RDS(ON) RDS(ON)<br>(Ω)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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2 10<br>1.8 PT TT Tye eo 9 eee) |<br>1.6 PT EE yt ye 8 eee |<br>1.4 7<br>-ID = 1mA<br>1.2 re 6 e ee | a<br>eee s<br>1 -I D  = 250μA 5 TA = 150oC<br>0.8 SSaa 4 ff|<br>o<br>0.6 Pt PN 3 TA = 125 C Wf<br>0.4 Pt tT te ty ee 2 | TA = 85 o C oe TA = 25 o C<br>0.2 Pe Tt tt ete 1 Hy TA = -55 o C<br>0 Pt TT > tet.Ty eefo 0 aoa PSZz<br>-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5<br>TA, AMBIENT TEMPERATURE (℃) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7. Gate Threshold Variation vs. Ambient Temperature Figure 8. Diode Forward Voltage vs. Current<br>1000 ——— 10 /<br>Ciss 8<br>a 7<br>a YW<br>6<br>100 V     = -15VDS<br>I   = -3AD<br>ASeeat 4 eJ<br>Coss<br>—————— 7<br>Crss 2<br>f = 1MHz<br>10 Seer 6  VELL 00 1 2 3 4 5 6 7 8<br>0 5 10 15 20 25 30<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg (nC)<br>Figure 10. Gate-Charge Characteristics<br>Figure 9. Typical Junction Capacitance<br>, SOURCE CURRENT (A)<br>IS<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br> (V)<br>GS<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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100<br>RDS(on)<br>Limited<br>CTET<br>10<br>DC<br>1 P    W = 10s<br>RRR P    = 1s W ee<br>P    = 100ms W<br>P    = 10msW<br>0.1 T            = 150°CJ(max) P    = 1msW<br>T   = 25°CA P    W = 100µs<br>V     = 4.5VGS<br>Single Pulse Ett<br>DUT on 1 * MRP Board<br>0.01 At<br>0.1 1 10 100<br>V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 11. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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DMS2085LSD Document number: DS36926  Rev. 4 - 2 

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**DMS2085LSD** 

## **Electrical Characteristics – SCHOTTKY – D1** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|---|---|---|---|---|---|---|
|Reverse Breakdown Voltage (Note 10)|V(BR)R|20|35||V<br>IR= 1mA|= 1mA|
|Forward Voltage (Note 10)|VF|<br>|<br>|0.40<br>0.47|V<br>IF= 0.5A<br>IF= 1.0A|= 0.5A<br>= 1.0A|
|Reverse Current (Note 10)|IR||30|80|μA<br>VR= 20V|= 20V|



Note: 10. Short duration pulse test used to minimize self-heating effect. 

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10<br>1 ee Za<br>T   = 150A °C<br>=e 7c anaes<br>T   = 125°CA<br>MfLy  fo<br>0.1 T   = 85°CA<br>—Wf£ ff __|<br>T   = 25°C A<br>BWR<br>T   = -55°CA<br>0.01 Thi | [<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br>V, , INSTANTANEOUS FORWARD VOLTAGE (V)F<br>Figure 12. Typical Forward Characteristics<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100000<br>T   = 150A ° C<br>10000 SSS === T   = 125A °C 55<br>1000 T    A = 85°C<br>eee<br>T  = 25°C A<br>SSSa —— |<br>100 T   = -55°CA<br>=o 22 == =oee<br>10<br>7<br>1 FREE LLL La<br>0 2 4 6 8 10 12 14 16 18 20<br>V  , INSTANTANEOUS REVERSE VOLTAGE (V)R<br>Figure 13. Typical Reverse Characteristics<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


6 of 8 **www.diodes.com** 

DMS2085LSD Document number: DS36926  Rev. 4 - 2 

December 2021 © Diodes Incorporated 

**DMS2085LSD** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**==> picture [506 x 241] intentionally omitted <==**

**----- Start of picture text -----**<br>
SO-8<br>SO-8<br>E I Dim  Min  Max  Typ<br>A  1.40 1.50 1.45<br>A1  0.10 0.20 0.15<br>1<br>b  0.30 0.50 0.40<br>c  0.15 0.25 0.20<br>D  4.85 4.95 4.90<br>E  5.90 6.10 6.00<br>b<br>E1 E1  3.80 3.90 3.85<br>h E0  3.85 3.95 3.90<br>Q e  --  --  1.27<br>7° h  --  --  0.35<br>c L   0.62  0.82  0.72<br>A 4°±3° Q 0.60 0.70 0.65<br>G auge Plane All Dimensions in mm<br>S eating Plane<br>L<br>e A1 E0<br>D<br>All sides)<br>9° (<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SO-8** 

**==> picture [149 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
podoc X1<br>Y1<br>Y<br>‘aouey<br>C X<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Dimensions Value (in mm)<br>C 1.27<br>X  0.802<br>X1  4.612<br>Y  1.505<br>Y1  6.50<br>**----- End of picture text -----**<br>


7 of 8 **www.diodes.com** 

DMS2085LSD Document number: DS36926  Rev. 4 - 2 

December 2021 © Diodes Incorporated 

**DMS2085LSD** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes        products       are        provided       subject        to       Diodes’        Standard       Terms        and       Conditions       of       Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMS2085LSD Document number: DS36926  Rev. 4 - 2 

December 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMS2085LSD-13/power-mosfet-p-channel-20-v-33-a-007-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dms2085lsd-13/mosfet-p-ch-20v-3-3a-soic/dp/3943840RL)
---

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