# Power MOSFET, P Channel, 60 V, 6.1 A, 0.041 ohm, PowerDI3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3405203/)

**URL**: https://novapart.co/products/DMPH6050SFGQ-7/power-mosfet-p-channel-60-v-61-a-0041-ohm
**SKU**: DMPH6050SFGQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2250
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI3333 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 6.1A |
| Drain Source On State Resistance | 0.041ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3405203/)

**DMPH6050SFGQ 60V P-CHANNEL +175°C MOSFET** ~~PT~~ **PowerDI3333-8** 

|**Product Summary**|**Product Summary**|**Product Summary**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|-60V|50mΩ @ VGS= -10V|-18A|
||70mΩ @ VGS= -4.5V|-15A|



## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

- Backlighting 

- Power Management Functions 

- DC-DC Converters 

## **Features and Benefits** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switching  – Ensures More Reliable and Robust End Application 

- Low RDS(ON) – ensures on state losses are minimized 

- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Mechanical Data** 

- Case: PowerDI[®] 3333-8 

- Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections Indicator: See Diagram 

- Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

 

- Weight: 0.072 grams (Approximate) 

PowerDI3333-8 **D** S Pin 1 S S G **G** D ~~a~~ D D **S** D Bottom View Top View Equivalent Circuit **Ordering Information** (Note 5) **Part Number Case Packaging** DMPH6050SFGQ-7 PowerDI3333-8 2,000/Tape & Reel DMPH6050SFGQ-13 PowerDI3333-8 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. **Marking Information** PowerDI3333-8 PH5= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) **PH5** ~~SS ;~~ _PowerDI is a registered trademark of Diodes Incorporated._ DMPH6050SFGQ 1 of 7 March 2017 Document number: DS39560 Rev. 1 - 2 **www.diodes.com** © Diodes Incorporated 

March 2017 © Diodes Incorporated 

**DMPH6050SFGQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +100°C|ID|-6.1<br>-4.2|A|
|Continuous Drain Current (Note 8) VGS= -10V|Steady<br>State|TC= +25°C<br>TC= +100°C|ID|-18<br>-12|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|-32|A|
|Maximum Continuous BodyDiode Forward Current(Note 7)|||IS|-2|A|
|Pulsed BodyDiode Forward Current(10μs Pulse,DutyCycle = 1%)|||ISM|-32|A|
|Avalanche Current(Note 9)L = 0.1mH|||IAS|-24.8|A|
|Avalanche Energy (Note 9)L = 0.1mH|||EAS|30.8|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)||PD|1.2|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steadystate|RJA|125|°C/W|
||t<10s||85||
|Total Power Dissipation(Note 7)||PD|2.8|W|
|Thermal Resistance, Junction to Ambient (Note 7)|Steadystate|RJA|54|°C/W|
||t<10s||37||
|Thermal Resistance,Junction to Case(Note 8)||RJC|6||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ **|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 10) **|||||||
|Drain-Source Breakdown Voltage|BVDSS|-60|—|—|V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current TJ= +25°C|IDSS|—|—|-1|µA|VDS= -60V,VGS= 0V|
|Gate-Source Leakage|IGSS|—|—|±100|nA|VGS= ±20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 10) **|||||||
|Gate Threshold Voltage<br>~~oe~~|VGS(TH)<br>~~oe~~|-1<br>~~oe~~|—<br>~~oe~~|-3<br>~~oe~~|V<br>~~oe~~|VDS= VGS,ID= -250μA<br>~~oe~~|
|Static Drain-Source On-Resistance<br>~~oe~~|RDS(ON)<br>~~oe~~|—<br>~~oe~~|41<br>~~oe~~|50<br>~~oe~~|mΩ<br>~~oe~~|VGS= -10V,ID= -7A<br>~~oe~~|
|||—<br>~~oe~~|52<br>~~oe~~|70<br>~~oe~~||VGS= -4.5V,ID= -7A<br>~~oe~~|
|Diode Forward Voltage<br>~~oe~~|VSD<br>~~oe~~|—<br>~~oe~~|-0.7<br>~~oe~~|-1.2<br>~~oe~~|V<br>~~oe~~|VGS= 0V,IS= -1A<br>~~oe~~|
|**DYNAMIC CHARACTERISTICS(Note 11)**<br>~~a~~<br>~~———~~<br>~~eee~~|||||||
|Input Capacitance<br>~~———~~<br>~~———~~|Ciss<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|1293<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~eee~~|pF<br>~~———~~<br>~~eee~~|VDS= -30V, VGS= 0V,<br>f = 1MHz<br>~~———~~<br>~~eee~~|
|Output Capacitance<br>~~———~~<br>~~———~~|Coss<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|86.3<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~eee~~|pF<br>~~———~~<br>~~eee~~||
|Reverse Transfer Capacitance<br>~~———~~<br>~~———~~|Crss<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|64.7<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~eee~~|pF<br>~~———~~<br>~~eee~~||
|Gate Resistance<br>~~———~~<br>~~———~~|Rg<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~a~~|12<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~eee~~|Ω<br>~~———~~<br>~~eee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~eee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~———~~|Qg<br>~~a~~|—<br>~~a~~|11.9<br>~~a~~|—<br>~~eee~~|nC<br>~~eee~~|VDS= -30V, ID= -5A<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~|Qg<br>~~a~~|—<br>~~a~~|24.1<br>~~a~~|—<br>~~eee~~|nC<br>~~eee~~||
|Gate-Source Charge<br>~~———~~|Qgs<br>~~a~~|—<br>~~a~~|3.6<br>~~a~~|—<br>~~eee~~|nC<br>~~eee~~||
|Gate-Drain Charge<br>~~———~~<br>~~————~~|Qgd<br>~~a~~|—<br>~~a~~|5.7<br>~~a~~|—<br>~~eee~~<br>~~ee~~|nC<br>~~eee~~<br>~~ee~~||
|Turn-On DelayTime<br>~~———~~<br>~~————~~|tD(ON)<br>~~a~~|—<br>~~a~~|4.3<br>~~a~~|—<br>~~eee~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~|VDS= -30V, VGS= -10V,<br>RG= 3Ω, ID= -5A<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~————~~|tR<br>~~a~~|—<br>~~a~~|6.3<br>~~a~~|—<br>~~eee~~<br>~~ee~~|ns<br>~~eee~~<br>~~ee~~||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)|—|46.7|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~————~~|tF|—|25.3|—<br>~~ee~~|ns<br>~~ee~~||
|BodyDiode Reverse RecoveryTime<br>~~————~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|13.6<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|IF= -5A, di/dt = 100A/μs<br>~~ee~~<br>~~ee~~|
|Body Diode Reverse Recovery Charge<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|7.4<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~||



8. Thermal resistance from junction to soldering point (on the exposed drain pad). 

9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

10. Short duration pulse test used to minimize self-heating effect. 

11. Guaranteed by design. Not subject to product testing. 

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**----- Start of picture text -----**<br>
30 30<br>VGS = -10V VGS = -4.5V<br>25 VGS = -5.0V VGS  = -4.0V 25 VDS = -5.0V<br>20 ih lo 20 — |) HR<br>We,aan of<br>15 15<br>7) Za VGS  = -3.5V BRRen TA = 175°C ine<br>10 10 TA  = 150°C<br>TA = 125°C<br>TA = 85°C<br>5 5<br>VGS = -3.0V TA  = 25°C<br>VGS  = -2.8V TA  = -55°C<br>0 {__—___—_— 0 fF<br>0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>) 0.090 ) 0.2<br>(<br>0.18 ID = -7A<br>N [CE] 0.080 N [CE(]<br>T [A] 0.16 CA COE<br>I [S] S 0.070 R [ESISTA] 0.14 C E ID = -5A CE<br>O [N-RE] O [N-] 0.12 C OP EL<br>0.060 VGS = -4.5V<br>CHICCCE<br>O [URCE] U [RCE] 0.1<br>0.050<br>CAC EEE<br>I [N-S] N [-SO] 0.08<br>D [RA] 0.040 VGS = -10V D [RAI] 0.06 CACC<br>[,] O [N)] ( [,] N)O 0.04 CONSETT<br>R [DS] 0.030 ite RS(D i e<br>0 5 10 15 20 25 30 0.02 CELE CEEE<br>ID, DRAIN-SOURCE CURRENT (A) 0 2 4 6 8 10 12 14 16 18 20<br>Figure 3 Typical On-Resistance vs. VGS, GATE-SOURCE VOLTAGE (V)<br> Drain Current and Gate Voltage  Figure 4 Typical Transfer Characteristic<br>) 0.1 2.2<br>( VGS = -10V TA = 175°C<br>0.09 2<br>N [CE] T [A] TA = 150°C VGS  = -10V<br>0.08 1.8<br>I [S] S TA = 125°C ID = -7A<br>0.07 =SS= 1.6 Y<br>[RE]<br>O [N-] 0.06 TA = 85°C 1.4 V GS  = -4.5V<br>ID = -7A<br>O [URCE] 0.05 myor nee TA = 25°C 1.2 eTBEREy<br>[S] 0.04 SIS = 1 COOPa<br>I [N-]<br>D [RA] 0.03 TA = -55°C 0.8<br>[,] )<br>O [N]<br>(S 0.02 Se 0.6 ee<br>R [D]<br>0.01 0.4<br>0 tt 5 10 tt 15 20 25 fT 30 HCE<br>-50 -25 0 25 50 75 100 125 150 175<br>ID, DRAIN CURRENT (A)<br>Figure 5 Typical On-Resistance vs. TJ, JUNCTION TEMPERATURE (°C)<br> Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>)  )<br> <br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br><br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>DS(ON) R<br>R<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN CURRENT (A)<br>D<br>I<br>**----- End of picture text -----**<br>


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0.1 1 2.6<br>)<br>0.1 TTT ( [V] 2.4 x<br>G [E]<br>0.09 VIDGS = -7A = -10V O [LTA] 2.2 ID = -1mA<br>V<br>0.08 Peer RSEEEC E EE<br>SeeeEe7 6” 2 PS<br>H [OLD]<br>0.07 BEnnEZeLe S 1.8 SCS ID = -250µA<br>0.06 VGS = -4.5V<br>Snn628 ID = -7A T [HRE] 1.6 aaSN<br>T [E]<br>0.05<br>naparadae G [A] {tt | NA<br>1.4<br>0.04 CAAT SRREREANG<br>[,] ( [TH)]<br>G [S] 1.2<br>V<br>0.03<br>PEAT [tt ttt IN<br>1<br>0.02 PEEEELI -50 EEC -25 0 25  CEEes 50 75 100 125 150 175<br>-50 -25TJ, JUNCTION TEMPERATURE (°C)0 25 50 75 100 125 150 175 TFigure 8 Gate Threshold Variation vs. J, JUNCTION TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature         Junction Temperature<br>30 100000<br>VGS = 0V TA = 175°C<br>25 TA= 175°C ) 10000 TA = 150°C<br>P E ee<br>[A)] T [(] N 20 TA= 150°C N [T(nA] 1000 TA = 125°C<br>E H P SEEUSEESEEee<br>RR TA = 125°C<br>U C [URRE] 100<br>C 15<br>CE SE G [E] A SSoncanenaa= TA = 85°C<br>R KA<br>10 10 TA = 25°C<br>[OU] S TA= 85°C , [LE] S<br>S<br>I [s,] I [D] 1<br>5<br>TA = 25°C<br>0 WT) TA= -55°C 0.10 a 5 10 15 20 25 30 35 40 45 50 55 60<br>0 0.3 0.6 0.9 1.2 1.5 VDS, DRAIN-SOURCE VOLTAGE (V)<br>VSD, SOURCE-DRAIN VOLTAGE (V) Figure 10 Typical Drain-Source Leakage Current<br>Figure 9 Diode Forward Voltage vs. Current                               vs. Voltage<br>10000 10<br>f = 1MHz<br>F [)][p] (EC ======== Ciss 8 VIDDS = -5A = -30V<br>N<br>1000<br>I [TA] C Ses===== 6<br>A<br>P<br>A<br>C<br>4<br>T [ION]<br>C 100 Coss<br>N SS<br>U<br>J C rss<br>T [,] 2<br>C aan<br>10 CEE EA 0<br>0 5 10 15 20 25 30 35 40 0 4 8 12 16 20 24 28<br>VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 11 Typical Junction Capacitance Figure 12 Gate Charge<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS , LEAKAGE CURRENT (nA) IDSS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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100<br>R DS(on) ee<br>Limited Se ST S<br>) [A] 10 aHR TSNa PW = 100µs<br>T [(]<br>N ee A<br>E SS > Ne<br>R<br>R DC [|<br>UC 1 oat T PW = 10s NRANAOEPOK<br>eS ee NNNNIT)<br>I [N] AR SRNee PW = 1s [SN ININGNETnnn<br>D Ct PW = 100ms NWT NTE TT<br>I [d,] 0.1 TJ(max) = 175°C | TAAIN KON faa<br>TVSingle PulseAGS= 25°C= -10V reHHee P  , W = 10ms PW = 1ms SNeSSN<br>DUT on 1 * MRP Board<br>0.01<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 13 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>D = 0.9<br>Te D = 0.7 oeee ee ea<br>D = 0.5 oT eS ToT<br>PTH TT<br>LT D = 0.3 EDETT |cerr |<br>0.1 etl D = 0.1 eee eeLieea<br>Fo[eQBrrageef eee<br>a<br>D = 0.05 HHI eA ITT<br>Py a a<br>A Ee<br>D = 0.02<br>TPA T TI OCHO<br>0.01 PHIA LA<br>D = 0.01 eee | TT ETI LTE<br>Sa es 99 eeeT<br>es sO Oe OO ce OQ OO OO GG OO OGG GG OO GG GG GOO GG OO<br>fn D = 0.005 ttrmsep—— | dT A<br>*<br>by TeEc ECCT Rthja(t) = r(t)   Rthja mM<br>Single Pulse R thja  = 125°C/W<br>Duty Cycle, D = t1/ t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 14 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMPH6050SFGQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**PowerDI3333-8** 

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A1 A3<br>A<br>PowerDI3333-8<br>Seating Plane<br>Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>naa === A1  0.00 0.05 0.02<br>D<br>L(4x) A3    0.203<br>D2 b 0.27  0.37  0.32<br>1 b2  0.15 0.25 0.20<br>D  3.25 3.35 3.30<br>Pin #1 ID D2  2.22  2.32  2.27<br>b2(4x) E4 E  3.25 3.35 3.30<br>E2  1.56 1.66 1.61<br>E3 0.79 0.89 0.84<br>E<br>E4  1.60 1.70 1.65<br>= E2 (ca E3 === e   0.65<br>L  0.35 0.45 0.40<br>L1    0.39<br>L1(3x) z    0.515<br>8 All Dimensions in mm<br>z(4x) b<br>e<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI3333-8** 

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X3<br>X2<br>8<br>Y4<br>Y1 X1<br>Y2<br>Y3<br>ina<br>Y<br>1<br>X ‘O00 C 7<br>**----- End of picture text -----**<br>


**==> picture [106 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions Value (in mm)<br>C 0.650<br>X  0.420<br>X1  0.420<br>X2  0.230<br>X3  2.370<br>Y  0.700<br>Y1  1.850<br>Y2  2.250<br>Y3  3.700<br>Y4  0.540<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMPH6050SFGQ Document number: DS39560 Rev. 1 - 2 

March 2017 © Diodes Incorporated 

**DMPH6050SFGQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMPH6050SFGQ Document number: DS39560 Rev. 1 - 2 

March 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMPH6050SFGQ-7/power-mosfet-p-channel-60-v-61-a-0041-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmph6050sfgq-7/mosfet-p-ch-60v-6-1a-175deg-c/dp/3405203)
---

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