# Power MOSFET, P Channel, 40 V, 11.4 A, 9000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943832/)

**URL**: https://novapart.co/products/DMPH4015SSSQ-13/power-mosfet-p-channel-40-v-114-a-9000-ohm-soic
**SKU**: DMPH4015SSSQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3490
**Stock**: 500+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 11.4A |
| Drain Source On State Resistance | 9000µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943832/)

**DMPH4015SSSQ P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID**<br>**TA = +25°C**|
|-40V|11mΩ @ VGS= -10V|-11.4A|
||15mΩ @ VGS= -4.5V|-9.8A|



## **Features and Benefits** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance 

- Low Input Capacitance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DMPH4015SSSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: 

## **Mechanical Data** 

   - Case: SO-8 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC-DC Converters 

- Power Management Functions 

- Analog Switch 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Lead-Frame. Solderable per MIL-STD-202, Method 208 @> 

- Weight: 0.074 grams (Approximate) 

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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMPH4015SSSQ-13|SO-8|2,500/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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8 5<br>PEELE Ey<br>at a       = Manufacturer’s Marking<br>PH4015S = Product Type Marking Code<br>YYWW = Date Code Marking<br>PH4015S<br>YY = Year (ex: 18 = 2018)<br>YY WW WW = Week (01 to 53)<br>1 4<br>LT LILI<br>**----- End of picture text -----**<br>


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DMPH4015SSSQ Document number: DS39086  Rev. 3 - 2 

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**DMPH4015SSSQ** 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|±25|V|
|Continuous Drain Current (Note 6) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +100°C|ID|-11.4<br>-8.1|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|-85|A|
|Maximum BodyDiode Continuous Current(Note 6)|||IS|-3|A|
|Avalanche Current  L = 1mH|||IAS|-22|A|
|Avalanche EnergyL = 1mH|||EAS|260|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|1.4|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|90|°C/W|
|Total Power Dissipation(Note 6)|PD|1.8|W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|70|°C/W|
|Thermal Resistance,Junction to Case(Note 6)|RθJC|7.0|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**|||||||
|Drain-Source Breakdown Voltage|BVDSS|-40|||V|VGS= 0V,ID= -250μA|
|Zero Gate Voltage Drain Current|IDSS|||-1|μA|VDS= -40V,VGS= 0V|
|Gate-Source Leakage|IGSS|||±100|nA|VGS=±25V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~<br>~~ee~~|-1.5<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|-2.5<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= -250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|9<br>~~ee~~<br>~~ee~~|11<br>~~ee~~|mΩ<br>~~ee~~|VGS= -10V,ID= -9.8A<br>~~ee~~|
|||<br>~~ee~~<br>~~ee~~|11<br>~~ee~~<br>~~ee~~|15<br>~~ee~~||VGS= -4.5V,ID= -9.8A<br>~~ee~~|
|Forward Transfer Admittance<br>~~ee~~||Yfs|<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|26<br>~~ee~~<br>~~ee~~|<br>~~ee~~|S<br>~~ee~~|VDS= -20V,ID= -9.8A<br>~~ee~~|
|Diode Forward Voltage|VSD<br>~~ee~~|<br>~~ee~~|-0.7<br>~~ee~~|-1|V|VGS= 0V,IS= -1A|
|**DYNAMIC CHARACTERISTICS(Note 8)**|||||||
|Input Capacitance<br>~~——~~|Ciss<br>~~——~~|<br>~~——~~|4,234<br>~~——~~|<br>~~——~~|pF<br>~~——~~|VDS= -20V, VGS= 0V<br>f = 1MHz<br>~~——~~|
|Output Capacitance<br>~~——~~|Coss<br>~~——~~|<br>~~——~~|1,036<br>~~——~~|<br>~~——~~|||
|Reverse Transfer Capacitance<br>~~——~~|Crss<br>~~——~~|<br>~~——~~|526<br>~~——~~|<br>~~——~~|||
|Gate Resistance<br>~~——~~<br>~~———~~|RG<br>~~——~~|<br>~~——~~|7.8<br>~~——~~|<br>~~——~~<br>~~e~~|Ω<br>~~——~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~——~~<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~———~~|Qg||42.7|<br>~~e~~|nC<br>~~e~~<br>~~et |~~|VDS= -20V, ID= -9.8A<br>~~ee~~<br>~~|~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~|Qg||91|<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|Qgs||14.2|<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~<br>~~et~~|Qgd<br>~~et~~|<br>~~et~~|13.5<br>~~et~~|<br>~~e~~<br>~~et~~|||
|Turn-On DelayTime<br>~~———~~<br>~~et~~|tD(ON)<br>~~et~~|<br>~~et~~|13.2<br>~~et~~|<br>~~e~~<br>~~et~~|ns<br>~~e~~<br>~~et |~~|VGS= -10V, VDD= -20V, RG= 6Ω,<br>ID= -1A, RL= 20Ω<br>~~ee~~<br>~~|~~|
|Turn-On Rise Time<br>~~———~~<br>~~et~~|tR<br>~~et~~|<br>~~et~~|10<br>~~et~~|<br>~~e~~<br>~~et~~|||
|Turn-Off DelayTime<br>~~et~~|tD(OFF)<br>~~et~~|<br>~~et~~|303<br>~~et~~|<br>~~et~~|||
|Turn-Off Fall Time<br>~~et~~|tF<br>~~et~~|<br>~~et~~|138<br>~~et~~|<br>~~et~~|||
|Reverse RecoveryTime<br>~~et~~|tRR<br>~~et~~|—<br>~~et~~|26<br>~~et~~|—<br>~~et~~|ns<br>~~et |~~|IF= -9.8A,di/dt = -100A/µs<br>~~|~~|
|Reverse RecoveryCharge<br>~~et~~|QRR<br>~~et~~|—<br>~~et~~|20<br>~~et~~|—<br>~~et~~|nC<br>~~et |~~|IF= -9.8A,di/dt = -100A/µs<br>~~|~~|



6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

7. Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to product testing. 

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**DMPH4015SSSQ** 

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50.0 20<br>45.0 i  VGS = -10.0V  TT VDS= -5.0V<br>40.0 B  VGS = -8.0V  o 15<br>35.0  VGS = -6.0V<br>30.0  VGS = -4.5V<br>25.0 foa  VGS = -4.0V  10 i<br>20.0<br> VGS = -3.0V<br>15.0 7 ho 5 e ee TJ= 175 ℃ || TJ= 85 ℃<br>10.0 a  VGS = -2.3V   VGS = -2.5V   VGS = -2.8V  TJ= 150 ℃ f TJ= 25 ℃<br>5.0  VGS = -2.6V  TJ= 125 ℃ TJ= -55 ℃<br>0<br>0.0<br>_ 0 1 2 3 4 5<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>Figure 1. Typical Output Characteristic<br>50<br>15.00<br>45<br> VGS = -4.5V  40<br>12.00<br>35<br>30 os<br>9.00  VGS = -10V  25 a<br>20<br>ID = -9.8A D = -9.8A = -9.8A<br>15 ss A eeess<br>6.00<br>10 CSE<br>5 =<br>0 CHEER<br>3.00<br>2 4 6 8 10 12 14 16 18<br>0 10 20 30 40 50 60<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>(mΩ)  (mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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50<br>45<br>40<br>35<br>30 os<br>25 a<br>20<br>ID = -9.8A D = -9.8A = -9.8A<br>15 ss A eeess<br>10 CSE<br>5 =<br>0 CHEER<br>2 4 6 8 10 12 14 16 18 20<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.2<br>2<br>CT<br>1.8<br> VGS = -10V, ID = -9.8A<br>1.6 pp poe<br>1.4 ae<br>1.2 eee<br>1  VGS = -4.5V, ID = -9.8A<br>n> sa<br>0.8<br>0.6 eat ttt<br>e e<br>0.4 pitt<br>-50 -25 0 25 50 75 100 125 150 175<br>Ti ttt<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 6. On-Resistance Variation with Temperature<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 

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0.02<br>0.018 VGS= -10V<br>0.016<br>TJ= 125 ℃ TJ= 150 ℃ TJ= 175 ℃<br>0.014 eepS<br>0.012<br>—S———<br>0.01 TJ= 85 ℃<br>SE B<br>0.008 TJ= 25 ℃<br>0.006 ——<br>TJ= -55 ℃<br>0.004<br>a<br>0.0020 ai<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.02<br>0.018<br>Pit ptt tt to<br>0.016  VGS = -4.5V, ID = -9.8A GS = -4.5V, ID = -9.8A = -4.5V, ID = -9.8A D = -9.8A = -9.8A<br>0.014 FS a n<br>0.012 FE E e ee<br>aEnD ae><br>0.01 nD Anaae><br>0.008  VGS = -10V, ID = -9.8A GS = -10V, ID = -9.8A = -10V, ID = -9.8A D = -9.8A = -9.8A<br>0.006 paa oe<br>0.0040.002 ATEeeee  EEE EL EL<br>0 PELE EL<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ )<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.02 3<br>0.018<br>Pit ptt tt to 2.5 PTL LEE<br>0.016  VGS = -4.5V, ID = -9.8A GS = -4.5V, ID = -9.8A = -4.5V, ID = -9.8A D = -9.8A = -9.8A<br>0.014 FS a n 2 iii ID = -1mA  7<br>0.012 FE E e ee<br>0.01 aEnD Anaae> 1.5 S S ID = -250μA  ee-<br>0.008  VGS = -10V, ID = -9.8A GS = -10V, ID = -9.8A = -10V, ID = -9.8A D = -9.8A = -9.8A<br>1<br>0.006 paa oe SSS<br> EEE EL EL 0.5 PP]<br>0.0020.0040.002 ATEeeee ty Pp yf<br>0 PELE EL 0 TPP)<br>-50 -25 0 25 50 75 100 125 150 175<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>10000<br>20<br>f=1MHz<br>———_————<br>VGS = 0V  PS ,  __ Ciss  __|<br>a<br>15<br>10 U |T 1000 esNER<br>Coss<br>Oe<br>5 YT TJ= 175 ℃ I [> TJ= 85 ℃ ——_———seSS ae Crss<br>TJ= 150 ℃ TJ= 25 ℃<br>TJ= 125 ℃ TJ= -55 ℃ 100<br>0 Dl}BS) PECEE E PET<br>0 5 10 15 20 25 30 35 40<br>0 0.3 0.6 0.9 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>Figure 9. Diode Forward Voltage vs. Current<br>10 100<br>RLIMITED DS(ON)  PW=100µs<br>Pe ARTE OST SSS TT<br>8<br>10<br>6<br>1 PRINZ PW=1ms    NSN TL<br>PW=10ms<br>4  VDS = -20V, ID = -9.8A DS = -20V, ID = -9.8A = -20V, ID = -9.8A D = -9.8A = -9.8A<br>TJ(MAX)=175 ℃<br>2 0.1 TSingle Pulse A=25 ℃ PW=100ms  PW=1s   SK ON ERR<br>DUT on<br>1*MRP board  PW=10s<br>DC<br>VGS= -10V<br>0 0.01 ill CELL<br>0 20 40 60 80 100 120 0.1 1 10 100<br>Qg (nC)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge  Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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10<br>8<br>6<br>4  VDS = -20V, ID = -9.8A DS = -20V, ID = -9.8A = -20V, ID = -9.8A D = -9.8A = -9.8A<br>2<br>0<br>0 20 40 60 80 100 120<br>Qg (nC)<br>Figure 11. Gate Charge<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1 Reea A eeeOO ee eeOG eT OO SSOO et<br>pEeeSS o ae Sere——— iai<br>D=0.5<br>D=0.9<br>M T CIT TTT<br>D=0.3<br>0.1 Pn —eessGG| UaN=) ee “gee D=0.7  ee PUI |TTT<br>Bo D=0.1  A Ee OeOl” OO OGetGG OO OO GO<br>Pr<br>Sr<br>D=0.05<br>Fo WL He [|] PTEOAA ETrn<br>at D=0.02  VA<br>0.01 E ———e eeLa<br>D=0.01  a 2 Oe OO OO<br>NN——prioraTA eaePP eee eee ee eee<br>AZ CT<br>D=0.005  RθJA(t) = r(t) * RθJA<br>A te eee RθJA= 90 ℃ /W  UT<br>Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMPH4015SSSQ Document number: DS39086  Rev. 3 - 2 

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**DMPH4015SSSQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SO-8<br>**----- End of picture text -----**<br>


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SO-8<br>Dim  Min  Max  Typ<br>E<br>———— A  1.40  1.50  1.45<br>A1  0.10  0.20  0.15<br>1 b  0.30  0.50  0.40<br>c  0.15  0.25  0.20<br>D  4.85  4.95  4.90<br>E  5.90  6.10  6.00<br>b E1  3.80  3.90  3.85<br>E1<br>E0  3.85  3.95  3.90<br>h<br>e  --  --  1.27<br>Q<br>h  -  --  0.35<br>7°<br>L   0.62  0.82  0.72<br>c<br>Q 0.60  0.70  0.65<br>A 4°±3° All Dimensions in mm<br>G auge Plane<br>S eating Plane<br>L<br>e A1 E0<br>D<br>All sides)<br>9° (<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SO-8<br>X1<br>Dimensions Value (in mm)<br>C  1.27<br>Y1 X  0.802<br>X1  4.612<br>Y  1.505<br>OE Y1  6.50<br>Y<br>agen C X<br>**----- End of picture text -----**<br>


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DMPH4015SSSQ Document number: DS39086  Rev. 3 - 2 

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**DMPH4015SSSQ** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMPH4015SSSQ Document number: DS39086  Rev. 3 - 2 

March 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMPH4015SSSQ-13/power-mosfet-p-channel-40-v-114-a-9000-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmph4015sssq-13/mosfet-p-ch-40v-11-4a-soic/dp/3943832)
---

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