# Power MOSFET, P Channel, 40 V, 11.4 A, 9000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943831/)

**URL**: https://novapart.co/products/DMPH4015SSS-13/power-mosfet-p-channel-40-v-114-a-9000-ohm-soic
**SKU**: DMPH4015SSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4050
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.4W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 11.4A |
| Drain Source On State Resistance | 9000µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943831/)

**DMPH4015SSS P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID**<br>**TA = +25°C**|
|-40V|11mΩ @ VGS= -10V|-11.4A|
||15mΩ @ VGS= -4.5V|-9.8A|



## **Features and Benefits** 

- Rated to +175°C – Ideal for High Ambient Temperature Environments 

- 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance 

- Low Input Capacitance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMPH4015SSSQ)** 

## **Mechanical Data** 

- Case: SO-8 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Analog Switch 

- Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.074 grams (Approximate) 

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SO-8<br>Top View<br>**----- End of picture text -----**<br>


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D<br>S ma TT D<br>S ma TTI D<br>S rT TT D  G<br>G Co = D<br>S<br>Top View<br>Internal Schematic  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMPH4015SSS-13|SO-8|2,500/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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8 5<br>PT TT Ey ey<br>Jit<br>PH4015S<br>YY WW<br>O<br>1 4<br>LI} LI Ld a<br>**----- End of picture text -----**<br>


3 = Manufacturer’s Marking PH4015S = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) 

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**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|±25|V|
|Continuous Drain Current (Note 6) VGS= -10V|Steady<br>State|TA= +25°C<br>TA= +100°C|ID|-11.4<br>-8.1|A|
|Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)|||IDM|-85|A|
|Maximum BodyDiode Continuous Current(Note 6)|||IS|-3|A|
|Avalanche Current(Note 7)L = 1mH|||IAS|-22|A|
|Avalanche Energy (Note 7)L = 1mH|||EAS|260|mJ|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|PD|1.4|W|
|Thermal Resistance,Junction to Ambient(Note 5)|RθJA|90|°C/W|
|Total Power Dissipation(Note 6)|PD|1.8|W|
|Thermal Resistance,Junction to Ambient(Note 6)|RθJA|70|°C/W|
|Thermal Resistance,Junction to Case(Note 6)|RθJC|7.0|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +175|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**<br>~~———~~|||||||
|Drain-Source Breakdown Voltage<br>~~———~~|BVDSS<br>|-40<br>|<br>|<br>|V<br>|VGS= 0V,ID= -250μA<br>|
|Zero Gate Voltage Drain Current<br>~~———~~|IDSS<br>|<br>|<br>|-1<br>|μA<br>|VDS= -40V,VGS= 0V<br>|
|Gate-Source Leakage<br>~~———~~|IGSS<br>|<br>|<br>|100<br>|nA<br>|VGS=25V,VDS= 0V<br>|
|**ON CHARACTERISTICS(Note 8)**<br>~~———ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|-1.5<br>~~ee~~|<br>~~ee~~|-2.5<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= -250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(ON)<br>~~ee~~|<br>~~ee~~|9<br>~~ee~~|11<br>~~ee~~|mΩ<br>~~ee~~|VGS= -10V,ID= -9.8A<br>~~ee~~|
|||<br>~~ee~~|11<br>~~ee~~|15<br>~~ee~~||VGS= -4.5V,ID= -9.8A<br>~~ee~~|
|Forward Transfer Admittance<br>~~ee~~||Yfs|<br>~~ee~~|<br>~~ee~~|26<br>~~ee~~|<br>~~ee~~|S<br>~~ee~~|VDS= -20V,ID= -9.8A<br>~~ee~~|
|Diode Forward Voltage<br>~~GD~~|VSD<br>~~GD~~||-0.7<br>~~QO~~|-1<br>~~QO~~|V<br>~~QO~~|VGS= 0V,IS= -1A<br>~~QO~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~ee~~<br>~~eee~~|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~eee~~|4,234<br>~~———~~<br>~~eee~~|<br>~~———~~<br>~~eee~~|pF<br>~~———~~|VDS= -20V, VGS= 0V<br>f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~eee~~|1,036<br>~~———~~<br>~~eee~~|<br>~~———~~<br>~~eee~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~<br>~~ee~~|<br>~~———~~<br>~~eee~~|526<br>~~———~~<br>~~eee~~|<br>~~———~~<br>~~eee~~|||
|Gate Resistance|RG<br>~~ee~~|<br>~~eee~~|7.8<br>~~eee~~|<br>~~eee~~|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= -4.5V)|Qg||42.7||nC<br>~~ee~~|VDS= -20V, ID= -9.8A<br>~~ee~~|
|Total Gate Charge(VGS= -10V)|Qg||91||||
|Gate-Source Charge|Qgs||14.2||||
|Gate-Drain Charge<br>~~—<——~~|Qgd||13.5|<br>~~ee~~|||
|Turn-On DelayTime<br>~~—<——~~|tD(ON)||13.2|<br>~~ee~~|ns<br>~~ee~~|VGS= -10V, VDD= -20V, RG= 6Ω,<br>ID= -1A, RL= 20Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~—<——~~|tR||10|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~—<——~~|tD(OFF)||303|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~—<——~~|tF||138|<br>~~ee~~|||
|Reverse RecoveryTime<br>~~—<——~~<br>~~———————~~|tRR<br>~~———————~~|—<br>~~———————~~|26<br>~~———————~~|—<br>~~ee~~<br>~~———————~~|ns<br>~~ee~~<br>~~———————~~|IF= -9.8A,di/dt = -100A/µs<br>~~ee~~<br>~~———————~~|
|Reverse RecoveryCharge<br>~~———————~~|QRR<br>~~———————~~|—<br>~~———————~~|20<br>~~———————~~|—<br>~~———————~~|nC<br>~~———————~~|IF= -9.8A,di/dt = -100A/µs<br>~~———————~~|



- Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

   7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

   8. Short duration pulse test used to minimize self-heating effect. 

   9. Guaranteed by design. Not subject to product testing. 

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20<br>VDS= -5.0V<br>o 15<br>10 |<br>5 e ee TJ= 175 ℃ || TJ= 85 ℃<br>TJ= 150 ℃ ff TJ= 25 ℃<br>TJ= 125 ℃ TJ= -55 ℃<br>0<br>0 1 2 3 4 5<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>50<br>45 a<br>40 a<br>35 a<br>30 a<br>25 A<br>20<br>ID = -9.8A<br>15 ss A eees<br>10 e s<br>5 =<br>PEPE EERE<br>0<br>2 4 6 8 10 12 14 16 18 20<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.2<br>2<br>CT<br>1.8<br>VGS = -10V, ID = -9.8A<br>ee<br>1.61.4 Be<br>1.2 ELT<br>1 VGS = -4.5V, ID = -9.8A<br>aa aan<br>0.8<br>peat ttt<br>0.6<br>e e<br>0.4 pitt<br>-50 -25 0 25 50 Ti 75  ttt 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>ID<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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50.0<br>45.0  VGS = -10.0V<br>ii, TT<br>40.0  B VGS = -8.0V<br>35.0  VGS = -6.0V<br>30.0  F VGS = -4.5V o<br>VGS = -4.0V<br>25.0  ,<br>20.0<br>VGS = -3.0V<br>15.0  7<br>10.0  [| VGS = -2.3V VGS = -2.5V VGS = -2.8V<br>5.0  VGS = -2.6V<br>0.0<br>0 0.5 1 1.5 2 2.5 3<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>15.00<br>VGS = -4.5V<br>12.00<br>9.00  VGS = -10V<br>6.00<br>3.00<br>0 10 20 30 40 50 60<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>, DRAIN CURRENT (A)<br>ID<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.02<br>0.018 VGS= -10V<br>0.016<br>TJ= 125 ℃ TJ= 150 ℃ TJ= 175 ℃<br>0.014 eeaoe<br>0.012 SS<br>0.01 TJ= 85 ℃<br>SE SE<br>0.008 TJ= 25 ℃<br>0.006 =<br>TJ= -55 ℃<br>0.004<br>a<br>0.002 ai<br>0<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.02 3<br>0.018<br>pit p yy tt to 2.5 PTL LEE<br>0.016 VGS = -4.5V, ID = -9.8AGS = -4.5V, ID = -9.8A= -4.5V, ID = -9.8AD = -9.8A= -9.8A<br>0.014 ce FS a n 2 Sane ID = -1mA 7<br>0.012<br>0.01 eTaaaa aeEe 1.5 S S ID = -250μA = |<br>0.008 VGS = -10V, ID = -9.8AGS = -10V, ID = -9.8A= -10V, ID = -9.8AD = -9.8A= -9.8A 1<br>0.006 e a ee TT PSS~<br>0.004 ATC EE EEE EEE 0.5 PP]<br>0.002 P| Py Pp yf<br>0 Tt | | | | [| | ff | ft tf ft 0 Py] tty yyy.<br>-50 -25 0 25 50 75 100 125 150 175<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ ) TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>10000<br>20<br>f=1MHz<br>———————<br>VGS = 0V | Ciss<br>aee_|<br>15<br>10 e |i 1000  OsNER<br>Coss<br>OLOO<br>5 WT TJ= 175 ℃ Il TJ= 85 ℃ SST_Tae Crss<br>TJ= 150 ℃ [m4 TJ= 25 ℃ a<br>TJ= 125 ℃ TJ= -55 ℃ 100<br>0 DTBLS} C ECEEE<br>0 5 10 15 20 25 30 35 40<br>0 0.3 0.6 0.9 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>Figure 9. Diode Forward Voltage vs. Current<br>10 100<br>RLIMITEDDS(ON)  PW=100µs<br>PeOTT SS ET<br>8<br>10<br>6 1 |ANSON PW=1ms  AAS ON  PRTORGn<br>PW=10ms<br>4 VDS = -20V, ID = -9.8A<br>0.1 TTSingle PulseJ(MAX)C=25 ℃ =175 ℃ PW=100ms PW=1s  S/S NJ<br>2<br>DUT on<br>1*MRP board PW=10s<br>DC<br>VGS= -10V<br>lll CELL<br>0 0.01<br>0 20 40 60 80 100 120 0.1 1 10 100<br>Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, SOURCE CURRENT (A)<br>IS , JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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0.02<br>0.018<br>pit p yy tt to<br>0.016 VGS = -4.5V, ID = -9.8AGS = -4.5V, ID = -9.8A= -4.5V, ID = -9.8AD = -9.8A= -9.8A<br>0.014 ce FS a n<br>0.012<br>Ee<br>0.01 eTaaaa aeEe<br>0.008 VGS = -10V, ID = -9.8AGS = -10V, ID = -9.8A= -10V, ID = -9.8AD = -9.8A= -9.8A<br>0.006 e a ee<br>0.004 ATC EE EEE EEE<br>0.002 P|<br>0 Tt | | | | [| | ff | ft tf ft<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (J, JUNCTION TEMPERATURE (, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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**DMPH4015SSS** r~«d 

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1<br>a<br>ee ele ne —— a i<br>poNe<br>Nm<br>D=0.5<br>SEE iei 4 afin D=0.9<br>D=0.3 || || EE||<br>D=0.7<br>0.1 ra e ||<br>A ag ee eee scale ee ee aee LMeT!<br>pt Pt D=0.1 rt et et<br>_—— [art]  TTT tt er | lg<br>D=0.05<br>Fy MCHAa tT  TTTmT<br>D=0.02<br>0.01 LEG———aee ee ee<br>D=0.01 a2<br>POceeorSS(A fT Pt te<br>A<br>D=0.005 RθJA(t) = r(t) * RθJA<br>eee eee Hill<br>I | RθJA= 87 ℃ /W HH<br>Duty Cycle, D = t1 / t2<br>D=Single Pulse<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SO-8<br>**----- End of picture text -----**<br>


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SO-8<br>Dim  Min  Max  Typ<br>E<br>—= A  1.40 1.50 1.45<br>A1  0.10 0.20 0.15<br>1 b  0.30 0.50 0.40<br>c  0.15  0.25  0.20<br>D  4.85  4.95  4.90<br>E  5.90  6.10  6.00<br>b E1  3.80  3.90  3.85<br>E1<br>E0  3.85  3.95  3.90<br>h e  --  --  1.27<br>Q<br>h  -  --  0.35<br>7°<br>L   0.62  0.82  0.72<br>c<br>Q 0.60 0.70 0.65<br>A 4°± 3° All Dimensions in mm<br>G auge Plane<br>S eating Plane<br>L<br>e A1 st E0<br>D<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SO-8<br>X1<br>Dimensions Value (in mm)<br>C  1.27<br>Y1 X  0.802<br>X1  4.612<br>Y  1.505<br>OE Y1  6.50<br>Y<br>iatae C X<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMPH4015SSS Document number: DS38003  Rev. 2 - 2 

January 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMPH4015SSS-13/power-mosfet-p-channel-40-v-114-a-9000-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmph4015sss-13/mosfet-p-ch-40v-11-4a-soic/dp/3943831)
---

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