# Power MOSFET, P Channel, 40 V, 45 A, 8000 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943829RL/)

**URL**: https://novapart.co/products/DMPH4015SK3Q-13/power-mosfet-p-channel-40-v-45-a-8000-ohm-to-252
**SKU**: DMPH4015SK3Q-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3790
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 45A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943829RL/)

~~@,~~ **Green** 

## **DMPH4015SK3Q** CS **175°C P-CHANNEL ENHANCEMENT MODE MOSFET** 

|**Product Summary**<br>**Features and Benefits**<br>~~Oe~~|**Product Summary**<br>**Features and Benefits**<br>~~Oe~~|**Product Summary**<br>**Features and Benefits**<br>~~Oe~~|**Product Summary**<br>**Features and Benefits**<br>~~Oe~~|**Product Summary**<br>**Features and Benefits**<br>~~Oe~~|
|---|---|---|---|---|
||**BVDSS**|**RDS(ON) Max**|**ID**<br>TC= +25°C|<br>Rated to +175°C – Ideal for High Ambient Temperature<br>Environments|
||-40V|11m @VGS= -10V<br>15m @VGS= -4.5V|-45A<br>-40A|<br>100% Unclamped Inductive Switch (UIS) Test in Production<br><br>Low On-Resistance<br>Fast Switching Speed|



- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DMPH4015SK3Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

## **Description and Applications** 

**https://www.diodes.com/quality/product-definitions/** 

This MOSFET has been designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

- Reverse Polarity Protection 

   - Case: TO252 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Motor Control 

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 Power Management<br>Flammability Classification Rating 94V-0<br> Moisture Sensitivity: Level 1 per J-STD-020<br> Terminal Connections: See Diagram<br> Terminals: Finish – Matte Tin Finish Annealed over Copper<br>Leadframe. Solderable per MIL-STD-202, Method 208<br> Weight: 0.33 grams (Approximate)<br>D<br>TO252 (DPAK)  D<br>G<br>D<br>2 . &<br>G S S<br>Top View  Top View<br>Pin-Out  Equivalent Circuit<br>Ordering Information (Note 4)<br>Part Number Case Packaging<br>DMPH4015SK3Q-13  TO252 (DPAK)  2,500/Tape & Reel<br>**----- End of picture text -----**<br>


      - Terminals: Finish – Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

      - Weight: 0.33 grams (Approximate) 

- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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H4015S<br>YYWW<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking H4015S = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 20 = 2020) WW = Week (01 to 53) 

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**DMPH4015SK3Q** 

**Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|-40|V|
|Gate-Source Voltage|VGSS|±25|V|
|Steady State|TTCC = +100°C  = +25°C|ID|-45 -35|A|
|Continuous Drain Current (Note 6) VGS = -10V|
|Steady State|TTAA = +100°C  = +25°C|ID|-14 -10|A|
|Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)|IDM|-100|A|
|Maximum Body Diode Forward Current (Note 6)|IS|-45|A|
|Avalanche Current, L = 1mH (Note 7)|IAS|-22|A|
|Avalanche Energy, L = 1mH  (Note 7)|EAS|260|mJ|

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## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

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||||||
|---|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Total Power Dissipation (Note 5)|PD|1.7|W|
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RJA|73|°C/W|
|Total Power Dissipation (Note 6)|PD|3.3|W|
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RJA|38|
|°C/W|
|Thermal Resistance, Junction to Case|RJC|1.0|
|Operating and Storage Temperature Range|TJ,|TSTG|-55 to +175|°C|

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**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

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||||||||||
|---|---|---|---|---|---|---|---|---|
|Characteristic|Symbol|Min|Typ|Max|Unit|Test Condition|
|OFF CHARACTERISTICS (Note 8)|
|Drain-Source Breakdown Voltage|BVDSS|-40|||V|VGS = 0V, ID = -250µA|
|Zero Gate Voltage Drain Current|IDSS|||-1|µA|VDS = -40V, VGS = 0V|
|sae|Gate-Source Leakage|IGSS|||100|nA|VGS = 25V, VDS = 0V|
|ON CHARACTERISTICS (Note 8)|
|Gate Threshold Voltage|VGS(TH)|-1.5|-2|-2.5|V|VDS = VGS, ID = -250µA|
|a|Static Drain-Source On-Resistance|RDS(ON)||11 8|1115|m|VVGSGS = -10V = -4.5V,, I IDD = -9.8A  =  -9.8A|
|Diode Forward Voltage|VSD||-0.7|-1|V|VGS = 0V, IS = -1A|
|DYNAMIC CHARACTERISTICS (Note 9)|
|Input Capacitance|Ciss||4234||
|Output Capacitance|Coss||1036||pF|VDS = -20V, VGS = 0V|
|f = 1MHz|
|Reverse Transfer Capacitance|Crss||526||
|ee|Gate Resistance Total Gate Charge (VGS = -4.5V)|QRgg||ee|42.7 7.8|||VDS = 0V, VGS = 0V, f = 1MHz|
|Total Gate Charge (VGS = -10V)|Qg||91||nC|VDS = -20V,|
|Gate-Source Charge|Qgs||14.2||ID = -9.8A|
|Gate-Drain Charge|Qgd||13.5||
|Turn-On Delay Time|tD(ON)||13.2||
|aaa|Turn-On Rise Time|tR||10|ae||VGS = -10V, VDD = -20V,|
|ns|
|Turn-Off Delay Time|tD(OFF)||303||RG = 6, ID = -1A|
|Turn-Off Fall Time|tF||138||
|||Reverse Recovery Time|tRR||26||ns|IF = -9.8A, di/dt = -100A/µs|
|Reverse Recovery Charge|QRR||20||nC|IF = -9.8A, di/dt = -100A/µs|
|Notes:|5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.|

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6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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30.0<br>VGS=-3.5V<br>25.0 VGS=-4.0V<br>TPR<br>VGS=-4.5V<br>20.0<br>VGS=-5.0V<br>| a<br>VGS=-3.0V<br>15.0 VGS=-10.0V<br>10.0<br>5.0<br>VGS=-2.5V<br>0.0<br>0 0.4 0.8 1.2 1.6 2<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>0.014<br>0.012<br>VGS=-4.5V<br>0.010<br>VGS=-10V<br>0.008<br>0.006<br>0.004<br>0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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20<br>VDS= -5.0V<br>16 eee |e<br>12 e s|<br>TA=125℃<br>8 TA=85℃<br>TA=150℃<br>4 TA=25℃<br>TA=175℃<br>TA= -55℃<br>0<br>1 1.5 2 2.5 3 3.5 4<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>0.03<br>0.025<br>0.02<br>0.015<br>ID=-9.8A<br>0.01<br>0.005<br>0<br>0 5 10 15 20 25<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.018 1.8<br>TA=175℃<br>0.016 TA=150℃ 1.6 VGS=-10V, ID=-9.8A<br>TA=125℃<br>0.014 TA=85℃ ———— 1.4 HHH) | pe<br>0.012 — — 1.2 OUUDeanil<br>VGS=-4.5V, ID=-9.8A<br>TA=25℃<br>0.01 a H 1<br>0.008 TA=-55℃ 0.8<br>VGS=-4.5V<br>0.006 pe 0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.02 2.2<br>0.018 THI OC<br>2<br>0.016<br>1.8<br>0.014 VGS=-4.5V, ID=-9.8A ID=-1mA<br>0.012 aaaage7ae Coi e 1.6 L N e<br>ID=-250µA<br>0.01<br>1.4<br>0.008 eet VGS=-10V, ID=-9.8A LE N N<br>1.2<br>0.006<br>ae ons Hitt tT INS<br>0.004 1<br>PEC Tit TETLI<br>-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs Temperature<br>30 10000<br>Ciss f=1MHz<br>25 |e ae<br>20 VGS=0V,<br>TA=125℃ Coss<br>|<br>VGS=0V,<br>15 VGS=0V,   TA=85℃ 1000 Crss<br>TA=150℃<br>10 VGS=0V,<br>VGS=0V,   TA=25℃<br>5 TA=175℃ |<br>VGS=0V,<br>TA=-55℃<br>0 WD 100 aPTeeTeee eeTyee ee<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>Figure 9. Diode Forward Voltage vs. Current<br>10 1000<br>R LIMITED<br>DS(ON)<br>8 PW=100µs  PW=10µs  PW=1µs<br>100<br>6<br>ny 10 Sn PW=1ms<br>4 PW=10ms<br>VDS=-20V, ID=-9.8A 1 TJ(MAX)=175 ℃ PW=100ms<br>2 TC=25 ℃ PW=1s<br>Single Pulse<br>DUT on infinite heatsink<br>VGS=-4.5V<br>0 0.1<br>AEE ces fe<br>0 20 40 60 80 100 120 0.1 1 10 100<br>Qg  (nC) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>ee<br>rer D=0.9 O e<br>D=0.5<br>I<br>D=0.7<br>D=0.3 MTHU T T eg CITTrn | ||<br>0.1 ApL200 |<br>D=0.1 a Aee<br>===." [yo] ee<br>e e<br>D=0.05<br>- th mit | TT Ty<br>| SAY2A |<br>pA TET<br>0.01 ee D=0.02 ANN<br>seems Aan re<br>| le) Te D=0.01 0 OO OO OOOO GO GO<br>Saen . A0l [TyHS<br>Ho D=0.005 I I oo RθJC(t)=r(t) * RθJC |<br>Sra PE TTT il<br>RθJC=2.5°C/W<br>D=Single Pulse Duty Cycle, D=t1 /  t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMPH4015SK3Q** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **TO252 (DPAK)** 

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E<br>A<br>b3<br>7°± 1°<br>c<br>L3<br>TO252 (DPAK)<br>Dim Min  Max  Typ<br>A  2.19  2.39  2.29<br>D<br>A2 H A1  0.00  0.13  0.08<br>L4 A2  0.97  1.17  1.07<br>b  0.64  0.88 0.783<br>b2  0.76 1.14  0.95<br>b3  5.21  5.46 5.33<br>c  0.45 0.58 0.531<br>e D  6.00  6.20  6.10<br>b(3x) D1  5.21  -  -<br>b2(2x) e  -  -  2.286<br>0.508 E  6.45  6.70  6.58<br>Gauge Plane E1  4.32  -  -<br>H  9.40 10.41 9.91<br>E1 D1 Seating Plane L  1.40  1.78  1.59<br>L3  0.88 1.27  1.08<br>L A1 L4  0.64  1.02  0.83<br>2.74REF a  0°  10°  -<br>All Dimensions in mm<br>a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TO252 (DPAK)** 

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aa X1 |<br>Y1<br>Y2<br>C<br>Y<br>oOf<br>ao X<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>C  4.572<br>X  1.060<br>X1  5.632<br>Y  2.600<br>Y1  5.700<br>Y2  10.700<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

**www.diodes.com** 

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DMPH4015SK3Q Document number: DS38125  Rev. 4 - 2 

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## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmph4015sk3q-13/mosfet-p-ch-40v-45a-to-252/dp/3943829RL)
---

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