# Power MOSFET, P Channel, 40 V, 55 A, 0.01 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943828RL/)

**URL**: https://novapart.co/products/DMPH4013SK3Q-13/power-mosfet-p-channel-40-v-55-a-001-ohm-to-252
**SKU**: DMPH4013SK3Q-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3840
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2.1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 55A |
| Drain Source On State Resistance | 0.01ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943828RL/)

**Green** ~~Cy~~ 

## **DMPH4013SK3Q** -— **175°C P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) MAX**|**ID**<br>TC= +25°C|
|-40V|15m @VGS= -10V|-55A|
||23m @VGS= -4.5V|-50A|



## **Features and Benefits** 

- Rated to +175°C – Ideal for High Ambient Temperature 

- Environments 

- 100% Unclamped Inductive Switch (UIS) Test in Production 

- Low On-Resistance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This MOSFET has been designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Mechanical Data** 

- Reverse Polarity Protection 

- Motor Control 

- Power Management 

- Case: TO252 (DPAK) 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.33 grams (Approximate) 

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D<br>TO252 (DPAK)  D<br>G<br>D<br>G S S<br>Top View  Top View<br>Pin-Out  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMPH4013SK3Q-13|TO252(DPAK)|2,500/Tape & Reel|



- Notes:        1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 

   5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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PH4013S<br>YYWW<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking PH4013S = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 18 = 2018) WW = Week (01 to 53) 

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## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= -10V|Steady<br>State|TC= +25°C<br>TC= +100°C|ID|-55<br>-40|A|
|Pulsed Drain Current(10s Pulse,DutyCycle = 1%)|||IDM|-120|A|
|Maximum BodyDiode Forward Current(Note 7)|||IS|-3.6|A|
|Pulsed Source Current(10s Pulse,DutyCycle = 1%)|||ISM|-120|A|
|Avalanche Current,L = 0.1mH(Note 8)|||IAS|-40|A|
|Avalanche Energy,L = 0.1mH(Note 8)|||EAS|69|mJ|



## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 6)||PD|2.1|W|
|Thermal Resistance,Junction to Ambient(Note 6)|Steady State|RJA|71|°C/W|
|Total Power Dissipation(Note 7)||PD|3.7|W|
|Thermal Resistance,Junction to Ambient(Note 7)|Steady State|RJA|41|°C/W|
|Thermal Resistance,Junction to Case||RJC|1.7||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|°C|



|~~—_—aE__E_|~~|~~—_—aE__E_|~~|~~—_—aE__E_|~~|~~—_—aE__E_|~~|~~—_—aE__E_|~~|~~—_—aE__E_|~~|~~—_—aE__E_|~~|
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~—_—aE__E_~~|**Symbol**<br>~~—_—aE__E_~~|**Min**<br>~~—_—aE__E_~~|**Typ**<br>~~—_—aE__E_~~|**Max**<br>~~—_—aE__E_~~|**Unit**<br>~~—_—aE__E_~~|**Test Condition**<br>~~—_—aE__E_|~~|
|**OFF CHARACTERISTICS(Note 9)**<br>~~—_—aE__E_|~~|||||||
|Drain-Source Breakdown Voltage<br>~~—_—aE__E_~~|BVDSS<br>~~—_—aE__E_~~|-40<br>~~—_—aE__E_~~|<br>~~—_—aE__E_~~|<br>~~—_—aE__E_~~|V<br>~~—_—aE__E_~~|VGS= 0V,ID= -250µA<br>~~—_—aE__E_|~~|
|Zero Gate Voltage Drain Current<br>~~—_—aE__E_~~|IDSS<br>~~—_—aE__E_~~|<br>~~—_—aE__E_~~|<br>~~—_—aE__E_~~|-1<br>~~—_—aE__E_~~|µA<br>~~—_—aE__E_~~|VDS= -40V,VGS= 0V<br>~~—_—aE__E_|~~|
|Gate-Source Leakage<br><br>~~—————————————~~|IGSS<br><br>~~—————————————~~|<br><br>~~—————————————~~|<br><br>~~—————————————~~|100<br><br>~~—————————————~~|nA<br><br>~~—————————————~~|VGS=20V,VDS= 0V<br>~~|~~<br>~~—————————————~~|
|**ON CHARACTERISTICS(Note 9)**<br>~~—————————————~~|||||||
|Gate Threshold Voltage<br>~~—————————————~~|VGS(TH)<br>~~—————————————~~|-1.0<br>~~—————————————~~|<br>~~—————————————~~|-3.0<br>~~—————————————~~|V<br>~~—————————————~~|VDS= VGS,ID= -250µA<br>~~—————————————~~|
|Static Drain-Source On-Resistance<br>~~—————————————~~|RDS(ON)<br>~~—————————————~~|<br>~~—————————————~~|10<br>~~—————————————~~|15<br>~~—————————————~~|m<br>~~—————————————~~|VGS= -10V,ID= -10A<br>~~—————————————~~|
|||<br>~~—————————————~~|15<br>~~—————————————~~|23<br>~~—————————————~~||VGS= -4.5V,ID= -8A<br>~~—————————————~~|
|Diode Forward Voltage|VSD||-0.7|-1.2|V|VGS= 0V,IS= -1A|
|**DYNAMIC CHARACTERISTICS(Note 10)**|||||||
|Input Capacitance<br>~~———~~|Ciss<br>~~———~~|<br>~~———~~|4004<br>~~———~~|<br>~~———~~|pF<br>~~———~~|VDS= -20V, VGS= 0V<br>f = 1MHz<br>~~———~~|
|Output Capacitance<br>~~———~~|Coss<br>~~———~~|<br>~~———~~|309<br>~~———~~|<br>~~———~~|||
|Reverse Transfer Capacitance<br>~~———~~|Crss<br>~~———~~|<br>~~———~~|229<br>~~———~~|<br>~~———~~|||
|Gate Resistance<br>~~———~~|Rg<br>~~———~~|<br>~~———~~|3.5<br>~~———~~<br>~~oe~~|<br>~~———~~<br>~~oe~~|<br>~~———~~<br>~~oe~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~———~~|Qg<br>~~———~~|<br>~~———~~|31<br>~~———~~<br>~~oe~~|<br>~~———~~<br>~~oe~~|nC<br>~~———~~<br>~~oe~~|VDS= -20V, ID= -10A<br>~~———~~<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~|Qg<br>~~———~~|<br>~~———~~|67<br>~~———~~<br>~~oe~~|<br>~~———~~<br>~~oe~~|||
|Gate-Source Charge<br>~~———~~|Qgs<br>~~———~~|<br>~~———~~|13.2<br>~~———~~<br>~~oe~~|<br>~~———~~<br>~~oe~~|||
|Gate-Drain Charge<br>~~———~~|Qgd<br>~~———~~|<br>~~———~~|11<br>~~———~~<br>~~oe~~|<br>~~———~~<br>~~oe~~|||
|Turn-On DelayTime<br>~~———~~<br>~~eee~~|tD(ON)<br>~~———~~<br>~~eee~~|<br>~~———~~<br>~~eee~~|9.9<br>~~———~~<br>~~oe~~<br>~~eee~~|<br>~~———~~<br>~~oe~~<br>~~eee~~|ns<br>~~———~~<br>~~oe~~<br>~~eee~~|VGS= -10V, VDD= -20V,<br>RG= 3, ID= -10A<br>~~———~~<br>~~ee~~<br>~~eee~~|
|Turn-On Rise Time<br>~~eee~~|tR<br>~~eee~~|<br>~~eee~~|32<br>~~oe~~<br>~~eee~~|<br>~~oe~~<br>~~eee~~|||
|Turn-Off DelayTime<br>~~eee~~|tD(OFF)<br>~~eee~~|<br>~~eee~~|46<br>~~eee~~|<br>~~eee~~|||
|Turn-Off Fall Time<br>~~eee~~|tF<br>~~eee~~|<br>~~eee~~|53<br>~~eee~~|<br>~~eee~~|||
|Reverse RecoveryTime<br>~~eee~~|tRR<br>~~eee~~|—<br>~~eee~~|19.5<br>~~eee~~|—<br>~~eee~~|ns<br>~~eee~~|IF= -10A,di/dt = -100A/µs<br>~~eee~~|
|Reverse RecoveryCharge|QRR|—|11.6|—|nC|IF= -10A, di/dt= -100A/µs|



7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

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50.0   30<br>45.0   VDS= -5.0V<br>A  VGS = -10.0V  e 25   fe<br>40.0   f/f |<br> VGS = -4.0V<br>35.0<br>i )/. ae 20   f e<br>30.0<br>25.0    VGS = -5.0V  15<br>Oo) a Seen) ao<br>20.0    VGS = -4.5V   VGS = -3.5V<br>10<br>15.0   LY TJ= 175 ℃ ]<br>fy —__| Ai TJ= 85 ℃<br>10.0    VGS = -3.0V  5   TJ= 150 ℃ TJ= 25 ℃<br>5.0   TJ= 125 ℃ TJ= -55 ℃<br> VGS = -2.5V  0<br>0.0<br>1  1.5  2  2.5  3  3.5  4  4.5  5<br>0  0.4  0.8  1.2  1.6  2<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1.Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.020  0.018   a 0.035 0.04  a<br> VGS = -4.5V GS = -4.5V = -4.5V<br>0.016   0.03<br>Tf a<br>0.014   — 0.025  i<br>ID = -10A<br>0.012   eee 0.02  ee a<br> VGS = -10V GS = -10V = -10V  ID = -8.0A<br>0.010   0.015<br>e e eo<br>0.008   0.01<br>0.006   SSeS 0.005  ES E<br>0.004   Tr 0  es<br>0  5  10  15  20  25  30  0  5  10  15  20<br>ID, DRAIN-SOURCE CURRENT (A)  D, DRAIN-SOURCE CURRENT (A)  , DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>0.02  1.8<br>VGS= -10V GS= -10V = -10V<br>0.018  TT TJ= 175J= 175= 175 ℃ 1.6   VGS = -10V, ID = -10A<br>0.016  TJ= 150J= 150= 150 ℃<br>TJ= 125J= 125= 125 ℃ 1.4<br>0.014  === n nn<br>TJ= 85J= 85= 85 ℃ a<br>0.012  1.2<br>TJ= 25J= 25= 25 ℃  VGS = -4.5V, ID = -8.0A<br>0.01  a 1  J<br>0.008  TJ= -55J= -55= -55 ℃<br>0.8<br>0.006  Se re pert<br>0.004  a 0.6  annRneeae<br>0  5  10  15  20  25  30  -50  -25  0  25  50  75  100 125 150 175<br>ID, DRAIN CURRENT (A) D, DRAIN CURRENT (A) , DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>DS(ON) R<br>**----- End of picture text -----**<br>


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0.018  0.020  0.018   a<br> VGS = -4.5V GS = -4.5V = -4.5V<br>0.016<br>Tf<br>0.014   —<br>0.012   eee<br> VGS = -10V GS = -10V = -10V<br>0.010<br>e e<br>0.008<br>0.006   SSeS<br>0.004   Tr<br>0  5  10  15  20  25  30<br>ID, DRAIN-SOURCE CURRENT (A)  D, DRAIN-SOURCE CURRENT (A)  , DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Gate Voltage<br>0.02<br>VGS= -10V GS= -10V = -10V<br>0.018  TT TJ= 175J= 175= 175 ℃<br>0.016  TJ= 150J= 150= 150 ℃<br>TJ= 125J= 125= 125 ℃<br>0.014  ===<br>TJ= 85J= 85= 85 ℃<br>0.012<br>TJ= 25J= 25= 25 ℃<br>0.01  a<br>0.008  TJ= -55J= -55= -55 ℃<br>0.006  Se re<br>a<br>0.004<br>0  5  10  15  20  25  30<br>ID, DRAIN CURRENT (A) D, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Temperature<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.03  2.5<br>0.025<br>TOO  VGS = -4.5V, ID = -8.0A  2  Qi<br>0.02  ID = -1mA<br>0.015  1.5<br>Peer L TR ID = -250μA<br>0.01<br> VGS = -10V, ID = -10A  1<br>0.005  p err y T T S<br>0  P eeteLLEL EEEtt 0.5  EEE<br>-50 -25  0  25  50  75  100 125 150 175  -50 -25  0  25  50  75  100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature  Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE  , GATE THRESHOLD VOLTAGE (V)<br>DS(ON) GS(TH)<br>R V<br>**----- End of picture text -----**<br>


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30  10000<br>f=1MHz<br>25  VGS = 0V  Ciss<br>20  | FS S<br>15  OE 1000<br>10  TJ= 175 ℃ WE TJ= 85 ℃ <=====—= Coss<br>5  TJ= 150 ℃ TJ= 25 ℃<br>TJ= 125 ℃ TJ= -55 ℃ Crss<br>0  iI)iF 100   eeePT] ttt<br>0  0.3  0.6  0.9  1.2  1.5  0  5  10  15  20  25  30  35  40<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>Figure 9. Diode Forward Voltage vs. Current<br>10  1000<br>R LIMITED<br>DS(ON)<br>9  PW=10μs<br>8<br>100<br>7<br>6<br>10  PW=100μs<br>5<br>PW=1ms<br>4<br> VDS = -20V, ID = -10A DS = -20V, ID = -10A = -20V, ID = -10A D = -10A = -10A  TJ(MAX)=175 ℃ PW=10ms<br>3  1  TC=25 ℃ PW=100ms<br>Single Pulse<br>2  DUT on infinite  PW=1s<br>heatsink<br>1<br>VGS= -10V<br>fo 0.1  Cee apes<br>0<br>0.1  1  10  100<br>0  10  20  30  40  50  60  70<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Qg (nC)<br>Figure 12. SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br> (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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10<br>9<br>8<br>7<br>6<br>5<br>4<br> VDS = -20V, ID = -10A DS = -20V, ID = -10A = -20V, ID = -10A D = -10A = -10A<br>3<br>2<br>1<br>fo<br>0<br>0  10  20  30  40  50  60  70<br>Qg (nC)<br>Figure 11. Gate Charge<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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'mnm COR PORATED<br>**----- End of picture text -----**<br>


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1<br>SS SS<br>SS SS sao PEHE<br>D=0.5  D=0.9  a<br>PTH rH<br>a Oe D=0.7  PET PT<br>D=0.3<br>M ELA PLAT EEE PET<br>0.1  LII V T<br>D=0.1<br>e/a<br>ee D=0.05  enc<br>tl pT<br>TA D=0.02  ee AAP LE ay<br>0.01  parr e a na A  AaINN OOELI OOERIN LLINOG LINEOO EUOO<br>D=0.01<br>——SeST AlZo 0EE eee<br>| I SZ D=0.005  a RθJC(t) = r(t) * RθJC HT<br>arn D=Single Pulse  a RθJC= 1.7 ℃ /W  HTT<br>Duty Cycle, D = t1 / t2<br>i ono i<br>0.001<br>1E-06  1E-05  0.0001  0.001  0.01  0.1  1  10<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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TO252 (DPAK)<br>E<br>A<br>b3 TO252 (DPAK)<br>7°± 1° c Dim Min  Max  Typ<br>L3 A  2.19  2.39  2.29<br>A1  0.00  0.13  0.08<br>A2  0.97  1.17  1.07<br>b  0.64  0.88 0.783<br>= D op A2 Ee b2  0.76  1.14  0.95<br>H<br>L4 b3  5.21  5.46  5.33<br>c  0.45  0.58 0.531<br>D  6.00 6.20 6.10<br>D1  5.21  -  -<br>e  -  -  2.286<br>e E  6.45 6.70 6.58<br>a. b(3x) E1  4.32  -  -<br>b2(2x) H  9.40 10.41 9.91<br>L  1.40  1.78  1.59<br>0.508<br>Gauge Plane L3  0.88  1.27  1.08<br>L4  0.64  1.02  0.83<br>a  0°  10°  -<br>E1 D1 Seating Plane<br>All Dimensions in mm<br>L<br>A1<br>2.74REF<br>ee<br>a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **TO252 (DPAK)** 

**==> picture [134 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
X1<br>Y1<br>Y2<br>C<br>CJ<br>Y<br>of X<br>**----- End of picture text -----**<br>


**==> picture [107 x 67] intentionally omitted <==**

**----- Start of picture text -----**<br>
Dimensions  Value (in mm)<br>C  4.572<br>X  1.060<br>X1  5.632<br>Y  2.600<br>Y1  5.700<br>Y2  10.700<br>**----- End of picture text -----**<br>


6 of 7 **www.diodes.com** 

DMPH4013SK3Q Document number: DS40120  Rev. 4 - 2 

October 2018 © Diodes Incorporated 

**DMPH4013SK3Q** 

**IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMPH4013SK3Q Document number: DS40120  Rev. 4 - 2 

October 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMPH4013SK3Q-13/power-mosfet-p-channel-40-v-55-a-001-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmph4013sk3q-13/mosfet-p-ch-40v-55a-to-252/dp/3943828RL)
---

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