# Power MOSFET, P Channel, 40 V, 79 A, 0.011 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:4318627/)

**URL**: https://novapart.co/products/DMPH4011SK3-13/power-mosfet-p-channel-40-v-79-a-0011-ohm-to-252
**SKU**: DMPH4011SK3-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4610
**Stock**: 10+
**Lead Time**: 316 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 115W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 79A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318627/)

**Green** ~~@)~~ 

**DMPH4011SK3** ~~[~~ 

**175°C P-CHANNEL ENHANCEMENT MODE MOSFET** 

|**Product Summary**<br>**Features and Benefits**<br>~~Oe~~|**Product Summary**<br>**Features and Benefits**<br>~~Oe~~|**Product Summary**<br>**Features and Benefits**<br>~~Oe~~|**Product Summary**<br>**Features and Benefits**<br>~~Oe~~|**Product Summary**<br>**Features and Benefits**<br>~~Oe~~|
|---|---|---|---|---|
||**BVDSS**|**RDS(ON) MAX**|**ID**<br>**TC = +25°C**|<br>Rated to +175°C – Ideal for High Ambient Temperature<br>Environments|
||-40V|11m @VGS= -10V<br>19m @VGS= -4.5V|-79A<br>-61A|<br>100% Unclamped Inductive Switch (UIS) Test in Production<br><br>Low On-resistance|



 Rated to +175°C – Ideal for High Ambient Temperature Environments 

- Low On-resistance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

**- https://www.diodes.com/products/automotive/automotive products/.** 

   - **This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.** 

- DC-DC Converters 

- Power Management Functions 

**https://www.diodes.com/quality/product-definitions/** 

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 Backlighting<br>Mechanical Data<br> Case: TO252<br><br>Flammability Classification Rating 94V-0<br> Moisture Sensitivity: Level 1 per J-STD-020<br> Terminal Connections: See Diagram<br><br>Leadframe. Solderable per MIL-STD-202, Method 208<br> Weight: 0.33 grams (Approximate)<br>D<br>TO252 (DPAK)  D<br>G<br>D<br>2 . &<br>G S S<br>Top View  Top View<br>Pin-Out  Equivalent Circuit<br>Ordering Information (Note 4)<br>Part Number Case Packaging<br>DMPH4011SK3-13  TO252 (DPAK) 2,500/Tape & Reel<br>**----- End of picture text -----**<br>


      - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

      - Terminals: Finish – Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 **e3** 

      - Weight: 0.33 grams (Approximate) 

- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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**DMPH4011SK3** 

## **Marking Information** 

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H4015S<br>YYWW<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking PH4011S = Product Type Marking Code YYWW = Date Code Marking . YY = Year (ex: 21 = 2021) WW = Week (01 to 53) 

## **Maximum Ratings** (@ TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 6) VGS= -10V|Steady<br>State|TC= +25°C<br>TC= +100°C|ID|-79<br>-56|A|
|Pulsed Drain Current(10s Pulse,DutyCycle = 1%)|||IDM|-316|A|
|Maximum BodyDiode Forward Current(Note 6)|||IS|-79|A|
|Avalanche Current,L = 1mH|||IAS|-20|A|
|Avalanche Energy,L = 1mH|||EAS|202|mJ|



## **Thermal Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)|TA=+25°C|PD|3.7|W|
|Thermal Resistance,Junction to Ambient(Note 5)|Steady State|RJA|40|°C/W|
|Total Power Dissipation(Note 6)|TC= +25°C|PD|115|W|
|Thermal Resistance,Junction to Case(Note 6)||RJC|1.3|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +175|°C|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

6. Thermal resistance from junction to soldering point (on the exposed drain pad). 

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**DMPH4011SK3** 

**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@ TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~_~~|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 7)**<br>~~_~~|||||||
|Drain-Source Breakdown Voltage<br>~~_~~|BVDSS|-40|||V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current<br>~~_—~~|IDSS|||-1|µA|VDS= -32V,VGS= 0V|
|Gate-Source Leakage<br>~~—~~|IGSS|||100|nA|VGS=20V,VDS= 0V|
|**ON CHARACTERISTICS(Note 7)**<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~<br>~~i~~|VGS(TH)<br>~~ee~~<br>~~SS~~<br>~~i~~|-1.0<br>~~ee~~<br>~~SS~~<br>|<br>~~ee~~<br>~~SS———~~<br>|-2.5<br>~~ee~~<br>~~———~~|V<br>~~ee~~|VDS= VGS,ID= -250µA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~—~~<br>~~i~~|RDS(ON)<br>~~—~~<br>~~SS~~<br>~~i~~|<br>~~—~~<br>~~SS~~<br>|6.5<br>~~—~~<br>~~SS———~~<br>|11<br>~~—~~<br>~~———~~|m<br>~~—~~|VGS= -10V,ID= -9.8A<br>~~—~~|
|||<br>~~—~~<br>~~SS~~<br>|9.1<br>~~—~~<br>~~SS———~~<br>|19<br>~~—~~<br>~~———~~||VGS= -4.5V,ID= -9.8A<br>~~—~~|
|Diode Forward Voltage<br>~~—~~<br>~~i~~|VSD<br>~~—~~<br>~~SS~~<br>~~ia~~|<br>~~—~~<br>~~SS~~<br>~~aa~~|-0.7<br>~~—~~<br>~~SS———~~<br>~~a~~<br>~~ry~~|-1<br>~~—~~<br>~~———~~<br>~~rya~~|V<br>~~—~~<br>~~aa~~|VGS= 0V,IS= -1A<br>~~—~~<br>~~a~~|
|**DYNAMIC CHARACTERISTICS(Note 8)**<br>~~SS———~~<br>~~iaa~~<br>~~ryaa~~|||||||
|Input Capacitance<br>~~i~~<br>~~ee~~|Ciss<br>~~SS~~<br>~~ia~~<br>~~ee~~|<br>~~SS~~<br>~~aa~~<br>~~ee~~|4497<br>~~SS———~~<br>~~a~~<br>~~ry~~<br>~~ee~~|<br>~~———~~<br>~~rya~~<br>~~ee~~|pF<br>~~a a~~<br>~~ee~~|VDS= -20V, VGS= 0V<br>f = 1MHz<br>~~a~~<br>~~ee~~|
|Output Capacitance<br>~~i~~<br>~~ee~~|Coss<br>~~SS~~<br>~~i a~~<br>~~ee~~|<br>~~SS~~<br>~~a a~~<br>~~ee~~|555<br>~~SS———~~<br>~~a~~<br>~~ry~~<br>~~ee~~|<br>~~———~~<br>~~ry a~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|416<br>~~ee~~|<br>~~ee~~|||
|Gate Resistance<br>~~ee~~<br>~~————~~|Rg<br>~~ee~~|<br>~~ee~~|11.7<br>~~ee~~|<br>~~ee~~<br>~~e~~|<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~Ce~~<br>~~————~~|Qg||53|<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VDS= -20V, ID= -9.8A<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~————~~|Qg||104|<br>~~e~~|||
|Gate-Source Charge<br>~~————~~|Qgs||14|<br>~~e~~|||
|Gate-Drain Charge<br>~~————~~<br>~~ee~~|Qgd<br>~~ee ee~~|<br>~~ee~~|25<br>~~ee~~|<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~————~~<br>~~ee~~|tD(ON)<br>~~ee ee~~|<br>~~ee~~|8<br>~~ee~~|<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~<br>~~a~~|VGS= -10V, VDD= -20V,<br>Rg= 6, ID= -1A<br>~~ee~~<br>~~a~~|
|Turn-On Rise Time<br>~~ee~~|tR<br>~~ee ee~~|<br>~~ee~~|7.8<br>~~ee~~|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~ee~~<br>~~Ce~~|tD(OFF)<br>~~ee ee~~<br>~~**e**~~|<br>~~ee~~<br>~~**e**e~~|328<br>~~ee~~<br>~~e~~|<br>~~ee~~<br>~~ee~~|||
|Turn-Off Fall Time<br>~~ee~~<br>~~a~~<br>~~Ce~~|tF<br>~~ee ee~~<br>~~a~~<br>~~**e**~~|<br>~~ee~~<br>~~a~~<br>~~**e**e~~|147<br>~~ee~~<br>~~a~~<br>~~e~~|<br>~~ee~~<br>~~a~~<br>~~ee~~|||
|Reverse RecoveryTime<br>~~ee~~<br>~~a~~<br>~~Ce~~<br>~~rrr~~|tRR<br>~~ee ee~~<br>~~a~~<br>~~**e**~~<br>~~ld~~|<br>~~ee~~<br>~~a~~<br>~~**e**e~~<br>~~ld~~|37<br>~~ee~~<br>~~a~~<br>~~e~~<br>~~ld~~<br>~~ld~~|<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ld~~<br>~~ld~~|ns<br>~~ee~~<br>~~a~~<br>~~ld~~|IF= -9.8A,di/dt = -100A/µs<br>~~a~~|
|Reverse RecoveryCharge<br>~~Ce~~<br>~~rrr~~|QRR<br>~~**e**~~<br>~~ld~~|<br>~~**e**e~~<br>~~ld~~|29<br>~~e~~<br>~~ld~~<br>~~ld~~|<br>~~ee~~<br>~~ld~~<br>~~ld~~|nC<br>~~ld~~|IF= -9.8A,di/dt = -100A/µs|



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30<br>VDS = -5.0V<br>25 I r<br>20 o o|<br>15 eee ||<br>10 sao<br>/<br>TJ = 175℃ TJ = 85℃<br>5 TJ = 150℃ TJ = 25℃<br>Wh) TJ = 125℃ TJ = -55℃<br>0 Ly]<br>1 1.5 2 2.5 3 3.5 4<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 2. Typical Transfer Characteristic<br>50<br>45<br>TE CCC<br>40<br>35<br>30<br>25<br>20<br>15<br>ID = -9.8A<br>10<br>= 5 Hee<br>0 PEE EE  SE E S<br>2 4 6 8 10 12 14 16 18 20<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 4. Typical Transfer Characteristic<br>2.4<br>2.2<br>2 CCC<br>1.8<br>VGS = -10V, ID = -9.8A<br>1.6<br>sae onane><br>1.4<br>1.2 = a<br>1 VGS = -4.5V, ID = -9.8A<br>0.8 e ee<br>0.6<br>0.4 PTTEEPEPP eeeEECA<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃)<br>Figure 6. On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>IDD<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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50<br>VGS = -10V<br>45<br>S VGS = -5.0V e<br>40<br>35 aa VGS = -4.5V n VGS = -3.5V<br>30 | =n<br>VGS = -4.0V<br>25 |<br>20<br>| A<br>15 | VGS = -3.0V<br>10<br>5 VGS = -2.7V<br>i<br>0 — ——$—_————<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic<br>15.000<br>~<br>12.000 VGS = -4.5V<br>9.000<br>VGS = -10V<br>6.000<br>3.000<br>0.000 oT PLELELELEL =<br>0 10 20 30 40 50 60 70 80 90 100<br>ID, DRAIN-SOURCE CURRENT (A)<br>Figure 3. Typical On-Resistance vs. Drain Current<br>and Gate Voltage<br>15<br>VGS = -10V<br>12 CT TJ = 150℃ TJ = 175℃<br>9 TJ = 125℃<br>Ba nene<br>TJ = 85℃<br>6 S o<br>TJ = 25℃<br>TJ = -55℃<br>3 S E<br>0 eT PT Ty<br>0 5 10 15 20 25 30<br>ID, DRAIN CURRENT (A)<br>Figure 5. Typical On-Resistance vs. Drain Current<br>and Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID IDD<br>(mΩ) (mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>(mΩ)<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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18<br>15<br>VGS = -4.5V, ID = -9.8A<br>12<br>Pf ertL—<br>9<br>te t<br>6 4 VGS = -10V, ID = -9.8A 7<br>3 rT 7<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃)<br>(mΩ)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


Figure 7. On-Resistance Variation with Temperature 

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30<br>VGS = 0V<br>25 eee nt ee<br>20 eee<br>15 eee | ee<br>10 TJ = 175 [o] C Hy}<br>TJ = 150 [o] C TJ = 85 [o] C<br>5 TJ = 125 [o] C WT TJ = 25 [o] C<br>TJ = -55 [o] C<br>0 LY)<br>0 0.3 0.6 0.9 1.2<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2 VDS = -20V, ID = -9.8A<br>10 Viti tte eee do<br>0 10 20 30 40 50 60 70 80 90 100 110<br>Qg (nC)<br>Figure 11. Gate Charge<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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3<br>2.5<br>2<br>ID = 1mA<br>het | Lt | |<br>1.5<br>ee<br>1 aanLS ID = 250μA l fa<br>0.5 aan ON<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE (℃)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br>


Figure 8. Gate Threshold Variation vs. Junction Temperature 

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10000<br>f = 1MHz<br>— ——<br>Ciss<br>I<br>1000 e e e<br>Coss<br>P N<br>OO Crss<br>100 P| ET<br>0 10 20 30 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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1000<br>R<br>DS(ON)<br>Limited<br>100<br>PW = 1µs<br>PW = 10µs<br>10<br>PW = 100µs<br>PW = 1ms<br>TJ(Max) = 175 ℃ PW = 10ms<br>1 TC = 25 ℃ PW<br>Single Pulse<br>DUT on Infinite  DC<br>Heatsink<br>VGS = -10V<br>0.1 CoA<br>0.1 1 10 100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>D=0.5<br>D=0.9<br>e er re<br>D=0.3<br>e e eae eee D=0.7 PET TP PT<br>MT nt eet wn  L CE<br>a ae PLUM CERIN TTI TTT ETT<br>D=0.1<br>0.1 EO L<br>SSsSS9S9:SmS0 EAI IT IIE TAIT CTI LUT<br>pe D=0.05 NGA SO SG ON SO<br>Pll ECE STE SETI STE CEES TTig<br>Pt TT AE PPT<br>D=0.02<br>e o<br>i<br>0.01 ere D=0.01 LEI EAN TI CIE CUTIE CI LU<br>eee MUM EIEN UII EME LLU<br>2 aa eee re Ee ee ET SE<br>D=0.005<br>scar| JANfs D=Single Pulse | eeta aatt eee ee RθJC (t) = r(t) * R ee θJC HT<br>Hin) cen TTT RθJC = 1.3℃/W HH<br>Duty Cycle, D = t1/t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMPH4011SK3** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **TO252 (DPAK)** 

**==> picture [423 x 237] intentionally omitted <==**

**----- Start of picture text -----**<br>
E<br>A<br>b3<br>7°±1°<br>c<br>L3<br>TO252 (DPAK)<br>Dim Min  Max  Typ<br>| == A  2.19 2.39 2.29<br>Ag D A2 = A1  0.00 0.13 0.08<br>L4 H A2  0.97  1.17  1.07<br>b  0.64  0.88 0.783<br>b2  0.76 1.14  0.95<br>b3  5.21  5.46 5.33<br>c  0.45 0.58 0.531<br>D  6.00 6.20 6.10<br>e b( 3x) D1  5.21  -  -<br>TT' b2( 2x) 8. | BBES e  -  -  2.286<br>E  6.45 6.70 6.58<br>0.508 E1  4.32  -  -<br>Gauge Plane<br>H  9.40 10.41  9.91<br>L  1.40 1.78 1.59<br>E1 D1 Seating Plane L3  0.88 1.27  1.08<br>L L4  0.64  1.02  0.83<br>A1<br>a  0°  10°  -<br>2.74REF<br>All Dimensions in mm<br>a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **TO252 (DPAK)** 

**==> picture [124 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fo X1<br>Y1<br>Y2<br>C<br>uo<br>Y<br>ot X<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**C**|4.572|
|**X**|1.060|
|**X1**|5.632|
|**Y**|2.600|
|**Y1**|5.700|
|**Y2**|10.700|



7 of 8 **www.diodes.com** 

DMPH4011SK3 Document number: DS40905  Rev. 3 - 2 

May 2021 © Diodes Incorporated 

**DMPH4011SK3** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

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4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/)  or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

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8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMPH4011SK3 Document number: DS40905  Rev. 3 - 2 

May 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMPH4011SK3-13/power-mosfet-p-channel-40-v-79-a-0011-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmph4011sk3-13/mosfet-p-ch-40v-79a-to-252/dp/4318627)
---

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