# Power MOSFET, P Channel, 30 V, 50 A, 7500 Β΅ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/DMPH3010LK3-13/power-mosfet-p-channel-30-v-50-a-7500-ohm-to-252
**SKU**: DMPH3010LK3-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: β¬0.3780
**Stock**: 1000+
**Lead Time**: 78 days (indicative)
## Description
Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0057ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175Β°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 7500Β΅ohm |
| Gate Source Threshold Voltage Max | 1.6V |
## Datasheet
π [Download PDF](https://novapart.co/datasheet/farnell:2709543/)
**Green DMPH3010LK3 175Β°C P-CHANNEL ENHANCEMENT MODE MOSFET**
- **Green DMPH3010LK3 175Β°C P-CHANNEL ENHANCEMENT MODE MOSFET**
- **Product Summary Features and Benefits V(BR)DSS RDS(ON) Max ID** ο· Rated to +175Β°C β Ideal for High Ambient Temperature TC = +25Β°C Environments
- 7.5mο @ VGS = -10V -50A ο· 100% Unclamped Inductive Switch (UIS) Test in Production
- -30V ο· Low On-Resistance 10mο @ VGS = -4.5V -45A ο· Fast Switching Speed ο· **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** ο· **Halogen and Antimony Free. βGreenβ Device (Note 3)**
- **Description** ο· **Qualified to AEC-Q101 Standards for High Reliability** This new generation MOSFET is designed to minimize the on-state resistance (Rmaking it ideal for high efficiency power management applications. DS(ON)) and yet maintain superior switching performance, **Mechanical Data** ο· Case: TO252
- **Applications** ο· Case Material: Molded Plastic, βGreenβ Molding Compound. UL ο· DC-DC Converters Flammability Classification Rating 94V-0 ο· Power Management Functions ο· Moisture Sensitivity: Level 1 per J-STD-020 ο· Backlighting ο· Terminal Connections: See Diagram ο· Terminals: Finish β Matte Tin Finish Annealed over Copper
- | ~~DICDES @~~ Leadframe. Solderable per MIL-STD-202, Method 208 ~~β~~ **e3** ο· Weight: 0.33 grams (Approximate)
- TO252 D **D G**
- D
- > ~~. &~~ G S **S**
- Top View Top View Pin-Out Equivalent Circuit
- **Ordering Information** (Note 4) **Part Number Case Packaging**
- DMPH3010LK3-13 TO252 2,500/Tape & Reel
- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporatedβs definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Greenβ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
## **Marking Information**
**==> picture [37 x 22] intentionally omitted <==**
**----- Start of picture text -----**
H3010L
YYWW
**----- End of picture text -----**
- H3010L = Product Type Marking Code = Manufacturerβs Marking . YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 to 53)
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DMPH3010LK3 Document number: DS38123 Rev. 1 - 2
October 2015 Β© Diodes Incorporated
**DMPH3010LK3**
## **Maximum Ratings** (@ TA = +25Β°C, unless otherwise specified.)
|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-30|V|
|Gate-Source Voltage|||VGSS|Β±20|V|
|Continuous Drain Current (Note 6), VGS= -10V|Steady
State|TC= +25Β°C
TC= +100Β°C|ID|-50
-40|A|
||Steady
State|TA= +25Β°C
TA= +100Β°C|ID|-16
-11|A|
|Pulsed Drain Current(10οs Pulse,DutyCycle = 1%)|||IDM|-100|A|
|Maximum BodyDiode Continuous Current(Note 6)|||IS|-3.5|A|
|Avalanche Current(Note 7), L = 0.1mH|||IAS|-47|A|
|Avalanche Energy (Note 7), L = 0.1mH|||EAS|113|mJ|
## **Thermal Characteristics** (@ TA = +25Β°C, unless otherwise specified.)
|**Thermal Characteristics **(@ TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Thermal Characteristics **(@ TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation(Note 5)||PD|2.0|W|
|Thermal Resistance,Junction to Ambient(Note 5)|Steady State|Rο±JA|73|Β°C/W|
|Total Power Dissipation(Note 6)||PD|3.9|W|
|Thermal Resistance, Junction to Ambient(Note 6)|Steady State|Rο±JA|38|Β°C/W|
|Thermal Resistance, Junction to Case||Rο±JC|1.0||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +175|Β°C|
## **Electrical Characteristics** (@ TA = +25Β°C, unless otherwise specified.)
|**Electrical Characteristics** (@ TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|**Electrical Characteristics** (@ TA = +25Β°C, unless otherwise specified.)A = +25Β°C, unless otherwise specified.)= +25Β°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS(Note 8)**|||||||
|Drain-Source Breakdown Voltage
~~ee~~|BVDSS
~~ee~~|-30
~~ee~~|β
~~ee~~|β
~~ee~~|V
~~ee~~|VGS= 0V,ID= -250Β΅A
~~ee~~|
|Zero Gate Voltage Drain Current
~~ee~~|IDSS
~~ee~~|β
~~ee~~|β
~~ee~~|-1.0
~~ee~~|ΞΌA
~~ee~~|VDS= -30V,VGS= 0V
~~ee~~|
|Gate-Source Leakage
~~ee~~|IGSS
~~ee~~|β
~~ee~~|β
~~ee~~|Β±100
~~ee~~|nA
~~ee~~|VGS= Β±20V,VDS= 0V
~~ee~~|
|**ON CHARACTERISTICS(Note 8)**|||||||
|Gate Threshold Voltage
~~a~~|VGS(TH)|-1.1|-1.6|-2.1|V|VDS= VGS,ID= -250Β΅A|
|Static Drain-Source On-Resistance
~~a~~|RDS(ON)|β|5.7|7.5|mΞ©|VGS= -10V,ID= -10A|
|||β|7.2|10||VGS= -4.5V,ID= -10A|
|Diode Forward Voltage|VSD|β|-0.65|-1.0|V|VGS= 0V,IS= -1A|
|**DYNAMIC CHARACTERISTICS(Note 9)**|||||||
|Input Capacitance
~~ββββ~~|Ciss
~~ββββ~~|β
~~ββββ~~|6807
~~ββββ~~|β
~~ββββ~~|pF
~~ββββ~~|VDS= -15V, VGS= 0V,
f = 1.0MHz
~~ββββ~~|
|Output Capacitance
~~ββββ~~|Coss
~~ββββ~~|β
~~ββββ~~|988
~~ββββ~~|β
~~ββββ~~|pF
~~ββββ~~||
|Reverse Transfer Capacitance
~~ββββ~~|Crss
~~ββββ~~|β
~~ββββ~~|647
~~ββββ~~|β
~~ββββ~~|pF
~~ββββ~~||
|Gate Resistance
~~ββββ~~
~~βββ~~|Rg
~~ββββ~~
~~βββ~~|β
~~ββββ~~|6.2
~~ββββ~~|β
~~ββββ~~
~~ee~~|Ξ©
~~ββββ~~
~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz
~~ββββ~~
~~eee~~|
|Total Gate Charge(VGS= -4.5V)
~~βββ~~|Qg
~~βββ~~|β|66|β
~~ee~~|nC
~~ee~~|VDS= -15V, ID= -10A
~~eee~~
~~ee~~|
|Total Gate Charge(VGS= -10V)
~~βββ~~|Qg
~~βββ~~|β|139|β
~~ee~~|nC
~~ee~~||
|Gate-Source Charge
~~βββ~~|Qgs
~~βββ~~|β|19.1|β
~~ee~~|nC
~~ee~~||
|Gate-Drain Charge
~~βββ~~|Qgd
~~βββ~~
~~=~~|β
~~=~~|21.7
~~=~~|β
~~ee~~|nC
~~ee~~||
|Turn-On DelayTime
~~βββ~~
~~ββββ~~|tD(ON)
~~βββ~~
~~ββββ~~
~~=~~|β
~~ββββ~~
~~=~~|9.0
~~ββββ~~
~~=~~|β
~~ee~~
~~ββββ~~|ns
~~ee~~
~~ββββ~~|VDS= -15V, VGEN= -10V,
RG= 6Ξ©, ID= -1A
~~eee~~
~~ββββ~~
~~ee~~|
|Turn-On Rise Time
~~βββ~~
~~ββββ~~|tR
~~βββ~~
~~ββββ~~
~~=~~|β
~~ββββ~~
~~=~~|10.5
~~ββββ~~
~~=~~|β
~~ee~~
~~ββββ~~|ns
~~ee~~
~~ββββ~~||
|Turn-Off DelayTime
~~ββββ~~|tD(OFF)
~~ββββ~~
~~=~~|β
~~ββββ~~
~~=~~|255
~~ββββ~~
~~=~~|β
~~ββββ~~|ns
~~ββββ~~||
|Turn-Off Fall Time
~~ββββ~~|tF
~~ββββ~~
~~=~~|β
~~ββββ~~
~~=~~|95
~~ββββ~~
~~=~~|β
~~ββββ~~|ns
~~ββββ~~||
|Body Diode Reverse Recovery Time
~~ββββββ_βββββ~~|tRR
~~=~~
~~ββββββ_βββββ~~|β
~~=~~
~~ββββββ_βββββ~~|27
~~=~~
~~ββββββ_βββββ~~|β
~~ββββββ_βββββ~~|ns
~~ββββββ_βββββ~~|IF= -10A, di/dt = -100A/ΞΌs
~~ee~~
~~ββββββ_βββββ~~|
|Body Diode Reverse Recovery Charge
~~ββββββ_βββββ~~|QRR
~~ββββββ_βββββ~~|β
~~ββββββ_βββββ~~|21
~~ββββββ_βββββ~~|β
~~ββββββ_βββββ~~|nC
~~ββββββ_βββββ~~|IF= -10A, di/dt = -100A/ΞΌs
~~ββββββ_βββββ~~|
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ =+ 25Β°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMPH3010LK3 Document number: DS38123 Rev. 1 - 2
October 2015 Β© Diodes Incorporated
**DMPH3010LK3**
**==> picture [506 x 673] intentionally omitted <==**
**----- Start of picture text -----**
30.0 30
VGS = -5.0V VDS= -5.0V
25.0 5 VGS = -4.5V ee 25 e e
VGS =-4.0V
20.0 VGS =-3.5V 20
175 β
VGS =-3.0V 150 β
15.0 | β_β ββ 15 c an |inn
a ee |e
125 β
85 β
10.0 10 25 β
VVGS GS =-2.5V=2.5V
-55 β
5.0 5
VVGS GS =-2.2V=2.2V
0.0 An a 0 aa
0 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 3 3.5 4
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic Figure 2.Typical Transfer Characteristic
0.012
0.05
0.045
0.01 TEL ELELEL 0.04 β
0.035
VGS = -4.5V
0.008 NEPEETT 0.03
0.025
0.006 NLT ET EE}y = 0.02 ARee
VGS = -10V
0.015
0.004 0.01
ID = -1.0A
CP } 0.005 RE
0.002 TEL ELELEL 0 Se
0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20
ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and Figure 4. Typical Transfer Characteristic
Gate Voltage
0.011 1.6
0.01 VGS=-4.5V 175 β 1.5
o y ) 150 β 1.4 AB
0.009
1.3
125 β
0.008 85 β 1.2 VGS=-10V, ID = -10A
0.007 1.1
25 β 1
0.006
0.9 VGS=-4.5V, ID = -10A
0.005
ce e tsΓ©dE 0.8
-55 β
0.004 SCE 0.7 PEE
1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 -50 -25 0 25 50 75 100 125 150 175
ID, DRAIN CURRENT(A) TJ, JUNCTION TEMPERATURE ( β )
Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Temperature
Temperature
, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID
, DRAIN-SOURCE ON-RESISTANCE (Ξ©) , DRAIN-SOURCE ON-RESISTANCE (Ξ©)
DS(ON) DS(ON)
R R
(NORMALIZED)
, DRAIN-SOURCE ON-RESISTANCE (Ξ©) , DRAIN-SOURCE ON-RESISTANCE
DS(ON)
R
DS(ON)
R
**----- End of picture text -----**
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DMPH3010LK3 Document number: DS38123 Rev. 1 - 2
October 2015 Β© Diodes Incorporated
**DMPH3010LK3**
**==> picture [512 x 648] intentionally omitted <==**
**----- Start of picture text -----**
0.01 2
0.009
1.7
0.008 VGS=-4.5V, ID = -10A ID = -1mA
0.007
a tt 1.4 LE ARAL
0.006 ID = -250ΞΌA
pane ae QX
0.005 eee
1.1
VGS=-10V, ID = -10A
0.004
0.003 Sennen toot 0.8 Β«SCLIN
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( β ) TJ, JUNCTION TEMPERATURE ( β )
Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction
Temperature
30 100000
25 VGS = 0V f=1MHz
ee βββββ_ββ
20 10000 Ciss
ee | | tf
TA = 85 [o] C
15 TA = 125 [o] C HIKE ββ_βββ
10 TA = 175TA = 150 [o] C [o] C | Lo TA = 25 [o] C 1000 S e Coss e
5 TA = -55 [o] C Crss
= = = =
0 Bh 100 es a
0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30
VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance
10 1000
R
9 DS(ON)
Limited PW =10Β΅s
8 PW =100Β΅s PW =1Β΅s
7
VDS = -15V, ID = -10A 100
6
5 PW =1ms
4
PW =10ms
10
3
TJ(Max) = 175 β
2 TC = 25 β PW =100ms
Single Pulse
1 DUT on Infinite Heatsink PW =1s
0 7eeoo 1 e VGS= -10V arTu| TC
0 30 60 90 120 150 0.1 1 10 100
Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area
(Ξ©)
, DRAIN-SOURCE ON-RESISTANCE , GATE THRESHOLD VOLTAGE (V)
DS(ON) GS(TH)
R V
, SOURCE CURRENT (A)
IS
, JUNCTION CAPACITANCE(pF)
T
C
(V)
GS
V
, DRAIN CURRENT (A)
ID
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DMPH3010LK3 Document number: DS38123 Rev. 1 - 2
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**==> picture [475 x 279] intentionally omitted <==**
**----- Start of picture text -----**
DMPH3010LK3
D
[|
1
ee
Se [ice enn ci |
D=0.9
HR D=0.5 re D=0.7 IH ee
D=0.3 a oe HEE
| ie ee el
0.1 HF D=0.1 A em | ELUMel n LTE ELAM ETT
ici D=0.05 TT) βesβg y dene | e e nil||e
C g
D=0.02 A TH HH TI TH
0.01 FYAVAL ETI EET EVIE TT
D=0.01
Smeet SEEee eeoe ooSnEEEEEL
er a St PTT TTT
Pt A AT RΞΈJC(t) = r(t) * RΞΈJC PT
D=0.005 RΞΈJC= 1.0 β /W
So mauilll
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE
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October 2015 Β© Diodes Incorporated
**DMPH3010LK3**
## **Package Outline Dimensions**
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
## **TO252 (DPAK)**
**==> picture [280 x 283] intentionally omitted <==**
**----- Start of picture text -----**
E
A
b3
7°± 1°
c
L3
D
A2
H
L4
e
b(3x)
b2(2x)
0.508
Gauge Plane
E1 D1 Seating Plane
L
A1
2.74REF
ae
a
**----- End of picture text -----**
|**TO252(DPAK)**|**TO252(DPAK)**|**TO252(DPAK)**|**TO252(DPAK)**|
|---|---|---|---|
|**Dim Min**|**Dim Min**|**Max**|**Typ**|
|**A**|2.19|2.39|2.29|
|**A1**|0.00|0.13|0.08|
|**A2**|0.97|1.17|1.07|
|**b**|0.64|0.88 0.783|0.88 0.783|
|**b2**|0.76|1.14|0.95|
|**b3**|5.21|5.46|5.33|
|**c**|0.45|0.58 0.531|0.58 0.531|
|**D**|6.00|6.20|6.10|
|**D1**|5.21|-|-|
|**e**|-|-|2.286|
|**E**|6.45|6.70|6.58|
|**E1**|4.32|-|-|
|**H**|9.40 10.41 9.91|9.40 10.41 9.91|9.40 10.41 9.91|
|**L**
**L3**|1.40|1.78|1.59|
|**L3**
**L4**|0.88
0.64|1.27
1.02|1.08
0.83|
|**a**
0Β°
10Β°
-
**All Dimensions in mm**||||
## **Suggested Pad Layout**
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
## **TO252 (DPAK)**
**==> picture [134 x 166] intentionally omitted <==**
**----- Start of picture text -----**
X1
Y1
a n |
Y2
C
Ld
Y
oat X
**----- End of picture text -----**
**==> picture [107 x 67] intentionally omitted <==**
**----- Start of picture text -----**
Dimensions Value (in mm)
C 4.572
X 1.060
X1 5.632
Y 2.600
Y1 5.700
Y2 10.700
**----- End of picture text -----**
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DMPH3010LK3 Document number: DS38123 Rev. 1 - 2
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**DMPH3010LK3 IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: [| A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright Β© 2015, Diodes Incorporated **www.diodes.com**[;] DMPH3010LK3 7 of 7 October 2015 Document number: DS38123 Rev. 1 - 2 **www.diodes.com** Β© Diodes Incorporated
October 2015 Β© Diodes Incorporated
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- [Supplier page](https://es.farnell.com/diodes-inc/dmph3010lk3-13/mosfet-aec-q101-p-ch-30v-to-252/dp/2709543)
---
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