# Power MOSFET, P Channel, 60 V, 3 A, 0.11 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943820RL/)

**URL**: https://novapart.co/products/DMP6185SE-13/power-mosfet-p-channel-60-v-3-a-011-ohm-sot-223
**SKU**: DMP6185SE-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2440
**Stock**: 500+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3A |
| Drain Source On State Resistance | 0.11ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943820RL/)

**DMP6185SE 60V P-CHANNEL ENHANCEMENT MODE MOSFET** 

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## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)**|**ID**<br>**TA = +25°C**|
|-60V|150mΩ @ VGS= -10V|-3A|
||185mΩ @ VGS= -4.5V|-2.7A|



## **Features and Benefits** 

- 100% Unclamped Inductive Switch (UIS) Test in Production 

- Low On-Resistance 

- Fast Switching Speed 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

   - **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

   - **An Automotive-Compliant Part is Available Under Separate Datasheet (DMP6185SEQ)** 

- Motor Control 

- Transformer Driving Switch 

## **Mechanical Data** 

- DC-DC Converters 

- Power Management Functions 

- Uninterrupted Power Supply 

- Case: SOT223 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See Diagram Below 

- Terminals: Finish - Matte Tin Annealed over Copper Lead Frame.  Solderable per MIL-STD-202, Method 208 **e3** 

- Weight: 0.112 grams (Approximate) 

SOT223 

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Top View 

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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP6185SE-13|SOT223|2,500 / Tape & Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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YWW<br>><br>P6185<br>:<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking P6185 = Marking Code YWW = Date Code Marking _ Y or Y= Year (ex: 0 = 2020) WW = Week (01 to 53) 

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DMP6185SE Document Number DS36465  Rev. 5 - 2 

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**DMP6185SE** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-60|V|
|Gate-Source Voltage||VGS|20|V|
|Continuous Drain Current  (Note 6)  VGS= -10V|TA= +25°C|ID|-3|A|
||TA= +70°C||-2.4||
|Maximum BodyDiode Continuous Current||IS|-2|A|
|Pulsed Drain Current (10µs Pulse, DutyCycle = 1%)||IDM|-15|A|
|Single Pulsed Avalanche Current  (Note 7)||IAS|-16|A|
|Single Pulsed Avalanche Energy(Note 7)||EAS|13|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.2|W|
||TA= +70°C||0.8||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|104|°C/W|
||t<10s||51||
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.2|W|
||TA= +70°C||1.4||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|60|°C/W|
||t<10s||30||
|Thermal Resistance,Junction to Case(Note 6)||RθJC|7.6||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~—_——_—_—_————~~|**Symbol**<br>~~—_——_—_—_————~~|**Min**<br>~~—_——_—_—_————~~|**Typ **<br>~~—_——_—_—_————~~|**Max**<br>~~—_——_—_—_————~~|**Unit**<br>~~—_——_—_—_————~~|**Test Condition**<br>~~—_——_—_—_————~~|
|**OFF CHARACTERISTICS**(Note 8)<br>~~—_——_—_—_————~~|||||||
|Drain-Source Breakdown Voltage<br>~~—_——_—_—_————~~|BVDSS<br>~~—_——_—_—_————~~<br>~~ee~~|-60<br>~~—_——_—_—_————~~<br>~~**e**e~~|—<br>~~—_——_—_—_————~~<br>~~ee~~|—<br>~~—_——_—_—_————~~<br>~~ee~~|V<br>~~—_——_—_—_————~~<br>~~ee~~|VGS= 0V,ID= -250μA<br>~~—_——_—_—_————~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~**e**e~~|—<br>~~ee~~<br>~~ee~~|-1<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~|VDS= -48V,VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~**e**e~~|—<br>~~ee~~<br>~~ee~~|±100<br>~~ee~~<br>~~ee~~|nA<br>~~ee~~<br>~~ee~~|VGS= ±20V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS**(Note 8) <br>~~ee~~<br>~~ee~~~~**e**eeeeeee~~<br>~~i~~<br>~~—~~|||||||
|Gate Threshold Voltage<br>~~C~~<br>~~i~~|VGS(TH)<br>~~ee ~~<br>~~C~~|-1<br> ~~**e**e ~~<br>~~C~~|—<br> ~~ee ~~<br>~~—~~|-3<br> ~~ee ~~<br>~~—~~|V<br> ~~ee~~|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~i~~<br>~~——~~|RDS(ON)|—|110<br>~~—~~|150<br>~~—~~|mΩ|VGS= -10V,ID= -2.2A|
||||130<br>~~—~~|185<br>~~—~~||VGS= -4.5V,ID= -1.8A|
|Diode Forward Voltage<br>~~i~~<br>~~——~~|VSD|—|-0.75<br>~~—~~|-0.95<br>~~—~~|V|VGS= 0V,IS= -1A|
|**DYNAMIC CHARACTERISTICS**(Note 9)<br>~~——~~|||||||
|Input Capacitance<br>~~——~~<br>~~Cn~~|Ciss|—|708|—|pF|VDS= -30V, VGS= 0V,<br>f = 1MHz|
|Output Capacitance|Coss|—|39|—|pF||
|Reverse Transfer Capacitance|Crss|—|32|—|pF||
|Gate Resistance|Rg|—|17|28|Ω|VDS= 0V,VGS= 0V,f = 1MHz|
|Total Gate Charge(VGS= -4.5V)<br>~~I~~|Qg<br>~~I~~|—<br>~~I~~|6.2<br>~~I~~|—<br>~~I~~|nC<br>~~I~~|VDS= -30V, ID= -12A<br>~~eee~~|
|Total Gate Charge(VGS= -10V)<br>~~|~~|Qg<br>~~|~~|—<br>~~|~~|14<br>~~|~~|—<br>~~|~~|nC<br>~~|~~||
|Gate-Source Charge|Qgs|—|2.8|—|nC||
|Gate-Drain Charge<br>~~————~~|Qgd|—|3.1|—<br>~~eee~~|nC<br>~~eee~~||
|Turn-On DelayTime<br>~~————~~|tD(ON)|—|5.2|—<br>~~eee~~|ns<br>~~eee~~|VDS= -30V, RL= 2.5Ω<br>VGS= -10V, RG= 3Ω<br>~~eee~~|
|Turn-On Rise Time<br>~~————~~|tR|—|23|—<br>~~eee~~|ns<br>~~eee~~||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)|—|33<br>~~Se~~|—<br>~~eee~~<br>~~Se~~|ns<br>~~eee~~<br>~~Se~~||
|Turn-Off Fall Time<br>~~————~~|tF|—|39<br>~~Se~~|—<br>~~eee~~<br>~~Se~~|ns<br>~~eee~~<br>~~Se~~||
|BodyDiode Reverse RecoveryTime<br>~~————~~<br>~~es~~|tRR<br>~~es~~|—<br>~~es~~|22<br>~~es~~<br>~~Se~~|—<br>~~eee~~<br>~~es~~<br>~~Se~~|ns<br>~~eee~~<br>~~es~~<br>~~Se~~|IF= -12A, di/dt = 100A/μs<br>~~eee~~<br>~~es~~|
|BodyDiode Reverse RecoveryCharge<br>~~es~~|QRR<br>~~es~~|—<br>~~es~~|17<br>~~es~~<br>~~Se~~|—<br>~~es~~<br>~~Se~~|nC<br>~~es~~<br>~~Se~~||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 

   7. UIS in production with L = 0.1mH, starting TA = +25°C. 

   8. Short duration pulse test used to minimize self-heating effect. 

   9. Guaranteed by design. Not subject to product testing. 

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**DMP6185SE** 

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20.0 20<br>18.0 18 VDS = -10V<br>ee WAZ |<br>VGS = -10V<br>16.0 16<br>VGS = -5.0V<br>14.0 14<br>VGS = -4.5V<br>12.0 VGS = -4.0V 12<br>10.0 aw 10 an<br>8.0 8<br>4 nn<br>6.0 VGS = -3.5V 6<br>150℃<br>4.0 f i 4<br>125℃<br>25℃<br>2.0 fL— VGS = -3.0V 2 op | |<br>85℃ -55℃<br>0.0 A 0 Se<br>0 | 1 2 3 4 5 0 1 2 3 4 5 6 7 8<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic<br>0.6 0.5<br>0.5 ee<br>0.4<br>ee<br>0.4<br>0.3<br>0.3 a<br>VGS = -4.5V 0.2<br>0.2 H A Y Pp ID = -2.2A<br>2 Oannnnn<br>0.1<br>0.1<br>ID = -1.8A<br>ae VGS = -10V 6S<br>0 ee 0<br>0 5 10 15 e 20 e 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current  Figure 4. Typical Transfer Characteristic<br>and Gate Voltage<br>0.4 2.4<br>VGS = -10V 2.2<br>0.35<br>Pott TL 2 po VGS = -10V, ID = -2.2A<br>0.3 1.8<br>150℃ 1.6<br>0.25 yg<br>125℃ 1.4<br>0.2 1.2<br>85℃<br>1<br>0.15 0.8 VGS = -4.5V, ID = -1.8A<br>25℃<br>0.1 0.6<br>0.4<br>0.05 -55℃<br>0.2<br>0 0<br>0 poppe} 2 4 6 8 10 12 14 16 18 20 | -50 EEE -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 5. Typical On-Resistance vs. Drain Current  Figure 6. On-Resistance Variation with Temperature<br>and Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>, DRAIN-SOURCE ON-RESISTANCE (Ω) , DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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0.3 3<br>0.25 2.5<br>TA ID = -1mA<br>VGS = -4.5V, ID = -1.8A<br>0.2 2<br>[een see Seee<br>ID = -250μA<br>0.15 1.5<br>eT SS S<br>0.1 1<br>Cee Ao<br>VGS = -10V, ID = -2.2A<br>0.05 oT 0.5 CUE<br>0 PERCE} 0 Eee<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)<br>Figure 7. On-Resistance Variation with Temperature Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>20 10000<br>VGS = 0V<br>18 f = 1MHz<br>16 ee | | ===ee ee =<br>14<br>1000 Ciss<br>12<br>10<br>8<br>100<br>6 ee; a aSn<br>4 TA = 150 [o] C TA = 85 [o] C Coss<br>TA = 125 [o] C TA = 25 [o] C Crss<br>2<br>TA = -55 [o] C<br>0 a 10 EEE<br>0 5 10 15 20 25 30 35 40<br>0 0.3 0.6 0.9 1.2 1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V) Figure 10  Typical Junction Capacitance-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current<br>100<br>10<br>R<br>DS(ON)<br>9 Limited<br>PW = 100µs<br>8<br>10<br>7<br>6 VDS = -30V<br>ID = -12A<br>1<br>5 PW = 1ms<br>4 PW = 10ms<br>TJ(Max) = 150 ℃<br>3<br>0.1 TC = 25 ℃ PW = 100ms<br>2 Single PulseDUT on 1*MRP  PW = 1s<br>1 board PW = 10s<br>VGS = -10V DC<br>0 el 0.01 an Nl<br>0 3 6 9 12 15 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11  Gate-Charge Characteristics Figure 12. SOA, Safe Operation Area<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-RESISTANCE (Ω)<br>GS(TH)<br>DS(ON) V<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>D<br>-I<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>**----- End of picture text -----**<br>


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1<br>D = 0.9<br>D = 0.7<br>SS D = 0.5 er eet eens ae ee<br>ST a<br>D = 0.3 mT A<br>ee ee<br>0.1 ee IE LTA Il<br>TE D = 0.1 TE ne ger) fp RS<br>re Sreeeemmen naan art eed 7 ee ee ee<br>D = 0.05<br>ETM TTT<br>HU ET ee<br>7A ||<br>AM D = 0.02 ELA  TTI LAI LITT<br>0.01<br>D = 0.01<br>See cay oeSw<br>D = 0.005<br>PteHU R JA (t) = r(t) * R JA lil<br>RJA =  10 4°C2癈 /W<br>Single Pulse<br>Duty Cycle, D = t1/ t2<br>0.001 Serre TATA A I<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)t1, PULSE DURATION TIME (sec)<br>Figure 12  Figure 13 T rara n ss ent Thermal Resistance i ent Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT223** 

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D<br>b1 Q<br>irae C<br>SOT223<br>Dim  Min  Max  Typ<br>A 1.55  1.65  1.60<br>A1 0.010 0.15  0.05<br>E E1<br>i) — b 0.60  0.80  0.70<br>b1 2.90  3.10  3.00<br>Gauge<br>Plane C 0.20  0.30  0.25<br>0.25 D 6.45  6.55  6.50<br>Seating L E 3.45 3.55 3.50<br>Plane S555<br>E1 6.90 7.10 7.00<br>e1 b e -  -  4.60<br>at—_ e o [|] a ———— e1 -  -  2.30<br>L 0.85  1.05  0.95<br>Q 0.84  0.94  0.89<br>A A1 All Dimensions in mm<br>=) ——<br>7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223** 

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X1<br>Y1<br>C1 Y2<br>Y<br>X C<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C  2.30<br>C1  6.40<br>X  1.20<br>X1  3.30<br>Y  1.60<br>Y1  1.60<br>Y2  8.00<br>**----- End of picture text -----**<br>


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DMP6185SE Document Number DS36465  Rev. 5 - 2 

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**DMP6185SE** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2020, Diodes Incorporated 

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November 2020 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP6185SE-13/power-mosfet-p-channel-60-v-3-a-011-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp6185se-13/mosfet-p-ch-60v-3a-sot-223/dp/3943820RL)
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