# Power MOSFET, P Channel, 60 V, 14 A, 0.06 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943819/)

**URL**: https://novapart.co/products/DMP6180SK3Q-13/power-mosfet-p-channel-60-v-14-a-006-ohm-to-252
**SKU**: DMP6180SK3Q-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2030
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 40W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 14A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 2.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943819/)

**DMP6180SK3Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID**<br>**TC = +25°C**|
|-60V|110mΩ @ VGS= -10V|-14A|
||140mΩ @ VGS= -4.5V|-12A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- **Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

   - Case: TO252 (DPAK) 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC-DC Converters 

- Power Management Functions 

- Analog Switch 

- Terminal Connections: See Diagram 

- Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.33 grams (Approximate) 

 

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D<br>TO252 (DPAK)<br>D<br>@ | &<br>G S $1<br>Top View  Top View  Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP6180SK3Q-13|TO252(DPAK)|2,500/Tape &Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

- 4 . Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**==> picture [38 x 23] intentionally omitted <==**

**----- Start of picture text -----**<br>
P618SK<br>YYWW<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking NH4011SS = Product Type Marking Code YYWW = Date Code Marking . YY = Year (ex: 16 = 2016) WW = Week (01 - 53) 

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**DMP6180SK3Q** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= -10V|Steady<br>State|TC= +25°C<br>TC= +100°C|ID|-14<br>-10|A|
|Maximum BodyDiode Forward Current(Note 7)|||IS|4.1|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|25|A|



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**<br>~~ee~~||**Symbol**<br>~~ee~~|**Value**<br>~~ee~~|**Units**<br>~~ee~~|
|Total Power Dissipation (Note 6)<br>~~ee~~|TA= +25°C<br>~~ee~~|PD<br>~~ee~~<br>~~Se~~|1.7<br>~~ee~~|W<br>~~ee~~<br>~~ese~~|
||TA= +70°C<br>~~ee~~<br>~~Se~~||1.0<br>~~ee~~<br>~~Se~~<br>~~e~~||
|Thermal Resistance, Junction to Ambient (Note 6)<br>~~EE~~|Steady State<br>~~EE~~<br>~~Se~~|RθJA<br>~~EE~~<br>~~Se~~|76<br>~~EE~~<br>~~Se~~<br>~~e~~|°C/W<br>~~EE~~<br>~~ese~~|
||T < 10s<br>~~EE~~<br>~~Se~~||33<br>~~EE~~<br>~~Se~~<br>~~e~~||
|Total Power Dissipation (Note 7)<br>~~a~~|TA= +25°C<br>~~Se~~<br>~~a~~|PD<br>~~Se~~<br>~~a~~|2.7<br>~~Se~~<br>~~e~~<br>~~a~~|W<br>~~ese~~<br>~~a~~<br>~~eee~~|
||TA= +70°C<br>~~a~~||1.5<br>~~a~~<br>~~e~~||
|Thermal Resistance, Junction to Ambient (Note 7)<br>~~ES~~|SteadyState<br>~~ES~~|RθJA<br>~~ES~~<br>~~ee~~|50<br>~~ES~~<br>~~e~~|°C/W<br>~~ES~~<br>~~eee~~<br>~~ee~~|
||t < 10s<br>~~ES~~||24<br>~~ES~~<br>~~e~~<br>~~ee~~||
|Total Power Dissipation (Note 7)<br>~~EE~~|TC= +25°C<br>~~EE~~|PD<br>~~EE~~<br>~~ee~~|40<br>~~e~~<br>~~EE~~<br>~~ee~~|W<br>~~eee~~<br>~~EE~~<br>~~ee~~|
||TC= +100°C<br>~~EE~~||16<br>~~EE~~<br>~~ee~~||
|Thermal Resistance,Junction to Case(Note 7)<br>~~EE~~|SteadyState<br>~~EE~~|RθJC<br>~~EE~~<br>~~ee~~|3.1<br>~~EE~~<br>~~ee~~|°C/W<br>~~EE~~<br>~~ee~~|
|Operatingand Storage Temperature Range||TJ,TSTG<br>~~ee~~|-55 to +150<br>~~ee~~|°C<br>~~ee~~|



|~~—S—SeS~~|~~—S—SeS~~|~~—S—SeS~~|~~—S—SeS~~|~~—S—SeS~~|~~—S—SeS~~|~~—S—SeS~~|
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~—S—S~~|**Symbol**<br>|**Min**<br>~~eS~~|**Typ**<br>~~eS~~|**Max**<br>~~eS~~|**Unit**<br>~~eS~~|**Test Condition**<br>~~eS~~|
|**OFF CHARACTERISTICS**(Note 8)<br>~~—S—SeS~~|||||||
|Drain-Source Breakdown Voltage<br>~~—S—S~~|BVDSS<br>|-60<br>~~eS~~|<br>~~eS~~|<br>~~eS~~|V<br>~~eS~~|VGS= 0V,ID= -250µA<br>~~eS~~|
|Zero Gate Voltage Drain Current<br>~~—S—S~~|IDSS<br>|<br>~~eS~~|<br>~~eS~~|-1<br>~~eS~~|µA<br>~~eS~~|VDS= -48V,VGS= 0V<br>~~eS~~|
|Gate-Source Leakage<br>~~—S—S ~~<br>~~es~~|IGSS<br> <br>~~es~~|<br> ~~eS~~<br>~~es~~|<br>~~eS~~<br>~~es~~|100<br>~~eS~~<br>~~es~~|nA<br>~~eS~~<br>~~es~~|VGS= ±20V,VDS= 0V<br>~~eS~~<br>~~es~~|
|**ON CHARACTERISTICS**(Note 8)<br>~~es~~|||||||
|Gate Threshold Voltage<br>~~es~~|VGS(TH)<br>~~es~~|-1.2<br>~~es~~|<br>~~es~~|-2.7<br>~~es~~|V<br>~~es~~|VDS= VGS,ID= -250µA<br>~~es~~|
|Static Drain-Source On-Resistance<br>~~—~~|RDS(ON)||60|110|mΩ|VGS= -10V,ID= -12A|
||||80|140||VGS= -4.5V,ID=-8A|
|Forward Transfer Admittance<br>~~—~~||YFS||<br>~~GO~~|15<br>~~GO~~|<br>~~QO~~|S<br>~~QO (~~|VDS= -5V,ID= -12A<br>~~(~~|
|Diode Forward Voltage<br>~~GD~~|VSD<br>~~GD~~|<br>~~GD~~<br>~~GO~~|-0.7<br>~~GD~~<br>~~GO~~|-1.0<br>~~GD~~<br>~~QO~~|V<br>~~GD~~<br>~~QO (~~|VGS= 0V,IS= -1A<br>~~GD~~<br>~~(~~|
|**DYNAMIC CHARACTERISTICS**(Note 9)<br>~~GO~~<br>~~QO (~~<br>~~eeeA~~|||||||
|Input Capacitance<br>~~————~~|CISS<br>~~————~~<br>~~eee~~|<br>~~————~~<br>~~eee~~|984.7<br>~~————~~<br>~~eee~~|<br>~~————~~<br>~~eee~~|pF<br>~~————~~<br>~~A~~|VDS= -30V, VGS= 0V, f = 1.0MHz<br>~~————~~|
|Output Capacitance<br>~~————~~|COSS<br>~~————~~<br>~~eee~~|<br>~~————~~<br>~~eee~~|58<br>~~————~~<br>~~eee~~|<br>~~————~~<br>~~eee~~|||
|Reverse Transfer Capacitance<br>~~————~~|CRSS<br>~~————~~<br>~~eee~~|<br>~~————~~<br>~~eee~~|45.5<br>~~————~~<br>~~eee~~|<br>~~————~~<br>~~eee~~|||
|Gate Resistance|RG<br>~~eee~~|<br>~~eee~~|12.9<br>~~eee~~|<br>~~eee ~~|Ω<br> ~~A~~|VDS= 0V,VGS= 0V,f = 1.0MHz|
|Total Gate Charge(VGS= -4.5V)|QG||8.1||nC|VDS= -30V, ID= -12A|
|Total Gate Charge(VGS= -10V)|QG||17.1||||
|Gate-Source Charge|QGS||3.2||||
|Gate-Drain Charge|QGD||3.9||||
|Turn-On DelayTime|tD(ON)||5.9||ns|VGS= -10V, VDS= -30V, RGEN= 3Ω,<br>RL= 2.5Ω|
|Turn-On Rise Time|tR||21.2||||
|Turn-Off DelayTime<br>~~———~~|tD(OFF)||30.9||||
|Turn-Off Fall Time<br>~~———~~|tF||39.1||||
|BodyDiode Reverse RecoveryTime<br>~~———~~|tRR||19.9||ns|IS= -12A,dI/dt = 100A/μs|
|BodyDiode Reverse RecoveryCharge<br>~~———~~|QRR||1.7||nC|IS= -12A, dI/dt= 100A/μs|



- Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout. 

   8. Short duration pulse test used to minimize self-heating effect 

   9. Guaranteed by design. Not subject to production testing 

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**DMP6180SK3Q** 

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30.0 20<br>VGS = -10V VGS = -5V VDS = -5.0V TA = 85°C<br>25.0 V GS  = -4.5V TA = 25°C<br>TA = -55°C TA = 125°C<br>15<br>20.0 ge<br>VGS = -4V TA = 150°C<br>15.0 10<br>of<br>10.0 VGS = -3.5V<br>5<br>5.0 VGS = -3V<br>aaa |<br>VGS = -2.5V<br>0.0 ne 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1  Typical Output Characteristics Figure 2  Typical Transfer Characteristics<br>0.16 0.25<br>VGS = -4.5V<br>0.14<br>0.2<br>0.12 Steet Le TA = 150°C<br>a TA = 125°C<br>0.1 0.15<br>VGS = -4.5V<br>0.08 TA = 85°C<br>eS 0.1 i SS<br>0.06 VGS = -10V TA = 25°C<br>0.04 ae TA = -55°C<br>0.05<br>Soe RS<br>0.02<br>0.02 Peer 0 CLE<br>0 5 10 15 20<br>0 5 10 15 20 25 30<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Figure 3  Typical On-Resistance vs. Figure 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage Drain Current and Temperature<br>2 0.20<br>0.18<br>1.8 Lt | ttt yo P| tt tt ty<br>VGS = -10V 0.16<br>1.6 ID = -10A 0.14<br>VGS = -4.5V<br>1.4 Ye V GS  = -4.5V 0.12 REEF ID = -5.0A FEE<br>ID = -5.0A<br>0.10<br>1.2 CoA) A ce<br>0.08 VGS = -10V<br>Uf ie Ee ID = -10A<br>1 0.06<br>TCA =o peer<br>0.04<br>0.8<br>eT 0.02 ERE EEE<br>0.6 AGREE 0 CEE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)<br>Figure 5  On-Resistance Variation with Temperature Figure 6  On-Resistance Variation with Temperature<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br>,  DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DSON<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>


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2.5 30<br>25<br>2<br>SR<br>ID = -1mA 20 TA = 85°C<br>1.5 cea ID = -250µA een 15 TA = 125°C TA = -55°C<br>TE fe<br>10<br>1 LEENA TA = 150°C<br>5 TA = 25°C<br>0.5 Cece 0 Bo<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 7  Gate Threshold Variation vs. Ambient Temperature Figure 8  Diode Forward Voltage vs. Current<br>10000 10<br>f = 1MHz<br>ss [ly<br>8<br>a /<br>CISS<br>1000<br>ae Of<br>6<br>VDS = -30V<br>ID = -12A<br>======== 4 eee<br>100 COSS<br>See 2 JT<br>C RSS<br>10 Ft]SSS| | | | ft fl U 0 VLLL<br>0 5 10 15 20<br>0 5 10 15 20 25 30 35 40<br>-VDS, DRAIN-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 10  Gate Charge Characteristics<br>Figure 9  Typical Junction Capacitance<br>1000<br>R DS(on)<br>100 Limited<br>10<br>1 DC<br>PW = 10s<br>PW = 1s<br>0.1 PW = 100ms<br>PW = 10ms<br>T J(max)  = 150°C P W  = 1ms<br>0.01 TA = 25°C PW = 100µs<br>VGS = 10V<br>Single Pulse<br>DUT on 1 * MRP Board<br>0.001<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, GATE SOURCE VOLTAGE (V)<br>-V<br>GS<br>S<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V) -I<br>GS(TH)<br>-V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1 SSS<br>D = 0.7<br>ST ==tte<br>See D = 0.5 ce<br>IPTC D = 0.3 meCEN eAA THT<br>SI EU Bl ee ‘ |W tf | UIT UU<br>0.1 eeEE D = 0.1 emer err D = 0.9 A A<br>eg D = 0.05<br>EZ<br>ZPe D = 0.02 A |<br>0.01 D = 0.01 Lee UII LLU LIE CATIA TUE<br>Pe<br>Pee D = 0.005 R JA (t) = r(t) * R JA mil<br>HH RJA = 68°C/W UT<br>Single Pulse Duty Cycle, D = t1/ t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 12  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP6180SK3Q** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TO252 (DPAK)** 

**==> picture [423 x 237] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||
|---|---|---|---|---|---|---|---|---|
|E|
|A|
|b3|
|7°±1°|
|c|
|L3|
|TO252 (DPAK)|
|Dim Min|Max|Typ|
|==|A|2.19|2.39|2.29|
|D|:|gr|A2|—|A1|0.00|0.13|0.08|
|L4|H|A2|0.97|1.17|1.07|
|b|0.64|0.88 0.783|
|b2|0.76|1.14|0.95|
|b3|5.21|5.46|5.33|
|c|0.45|0.58 0.531|
|D|6.00|6.20|6.10|
|e|b(3x)|D1|5.21|-|-|
|e|-|-|2.286|
|b2(2x)|
|E|6.45|6.70|6.58|
|0.508|E1|4.32|-|-|
|Gauge Plane|
|H|9.40 10.41|9.91|
|L|1.40|1.78|1.59|
|E1|D1|Seating Plane|L3|0.88|1.27|1.08|
|L|L4|0.64|1.02|0.83|
|A1|
|a|0°|10°|-|
|2.74REF|
|All Dimensions in mm|

**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TO252 (DPAK)** 

**==> picture [134 x 166] intentionally omitted <==**

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e e X1 ee<br>Y1<br>Y2<br>a C<br>Y<br>o<br>ii X<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>C  4.572<br>X  1.060<br>X1  5.632<br>Y  2.600<br>Y1  5.700<br>Y2  10.700<br>**----- End of picture text -----**<br>


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## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

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December 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP6180SK3Q-13/power-mosfet-p-channel-60-v-14-a-006-ohm-to-252)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp6180sk3q-13/mosfet-p-ch-60v-14a-to-252/dp/3943819)
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