# MOSFET, AEC-Q101, P-CH, -7.3A, -60V

![Product image](https://novapart.co/image/farnell:3276213/)

**URL**: https://novapart.co/products/DMP6110SVTQ-7/mosfet-aec-q101-p-ch-73a-60v
**SKU**: DMP6110SVTQ-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2260
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 6Pins |
| Channel Type | P Channel |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.2W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 1.2W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.105ohm |
| Transistor Case Style | TSOT-26 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7.3A |
| Drain Source On State Resistance | 0.105ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3276213/)

**DMP6110SVTQ P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TC = +25°C**|
|-60V|105mΩ @ VGS= -10V|-7.3A|
||130mΩ @ VGS= -4.5V|-6.5A|



## **Features and Benefits** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

   - Case: TSOT26 

   - Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Backlighting 

   - Terminal Connections Indicator: See Diagram 

- Power Management Functions 

   - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- DC-DC Converters 

   - Weight: 0.008 grams (Approximate) 

- 

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TSOT26  D<br>D 1 6 D<br>D 2 5 D<br>G<br>G 3 4 S<br>S<br>Top View  Device Schematic  Equivalent Circuit<br>**----- End of picture text -----**<br>


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TSOT26<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|
||||
|**Part Number**|**Case**|**Packaging**|
|DMP6110SVTQ-7|TSOT26|3,000/Tape &Reel|
|DMP6110SVTQ-13|TSOT26|10,000/Tape &Reel|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

P61 = Product Type Marking Code YM or YM = Date Code Marking ~~7~~ Y  = Year (ex: F = 2018) M = Month (ex: 9 = September) 

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DMP6110SVTQ Document number: DS39190 Rev. 2 - 2 

September 2018 © Diodes Incorporated 

**DMP6110SVTQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= -10V|TC= +25°C<br>TC= +70°C|ID|-7.3<br>-5.8|A|
|Maximum BodyDiode Forward Current(Note 7)||IS|-1.8|A|
|Pulsed Drain Current(380µs Pulse,1% DutyCycle)||IDM|-24|A|
|Pulsed Source Current(380µs Pulse,1% DutyCycle)||ISM|-24|A|
|Avalanche Current(Note 7)L = 0.1mH||IAS|-19|A|
|Repetitive Avalanche Energy (Note 7)L = 0.1mH||EAS|18|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.2|W|
||TA= +70°C||0.75||
|Thermal Resistance, Junction to Ambient (Note 6)|SteadyState|RθJA|105|°C/W|
||t<10s||60|°C/W|
|Total Power Dissipation (Note 7)|TA= +25°C|PD|1.8|W|
||TA= +70°C||1.1||
|Thermal Resistance, Junction to Ambient (Note 7)|SteadyState|RθJA|69|°C/W|
||t<10s||39|°C/W|
|Thermal Resistance, Junction to Case (Note 7)||RθJC|15|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**(Note 8)|||||||
|Drain-Source Breakdown Voltage|BVDSS|-60|||V|VGS= 0V,ID= -250µA|
|Zero Gate Voltage Drain Current|IDSS|||-1|µA|VDS= -48V,VGS= 0V|
|Gate-Source Leakage|IGSS|||-100|nA|VGS= ±16V,VDS= 0V|
|**ON CHARACTERISTICS**(Note 8)<br>~~a~~|||||||
|Gate Threshold Voltage<br>~~a~~|VGS(TH)<br>~~a~~|-1<br>~~a~~|<br>~~a~~|-3<br>~~a~~|V<br>~~a~~|VDS= VGS,ID= -250µA<br>~~a~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~a~~|<br>~~a~~|<br>~~a~~|105<br>~~a~~|mΩ<br>~~a~~|VGS= -10V,ID= -4.5A<br>~~a~~|
|||<br>~~a~~|<br>~~a~~|130<br>~~a~~||VGS= -4.5V,ID= -3.5A<br>~~a~~|
|Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|<br>~~a~~|-0.7<br>~~a~~|-1.2<br>~~a~~|V<br>~~a~~|VGS= 0V,IS= -1A<br>~~a~~|
|**DYNAMIC CHARACTERISTICS**(Note 9)<br>~~ee ee~~|||||||
|Input Capacitance<br>~~ee ee~~|CISS<br>~~ee~~|<br>~~ee~~|969<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= -30V, VGS= 0V, f = 1.0MHz|
|Output Capacitance<br>~~ee ee~~|COSS<br>~~ee~~|<br>~~ee~~|57<br>~~ee~~|<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee ee~~|CRSS<br>~~ee~~|<br>~~ee~~|44<br>~~ee~~|<br>~~ee~~|||
|Gate Resistance<br>~~ee ee~~<br>~~———~~|RG<br>~~ee~~|<br>~~ee~~|13.7<br>~~ee~~|<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~eee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~ee ee~~<br>~~———~~|QG<br>~~ee~~|<br>~~ee~~|8.2<br>~~ee~~|<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~<br>~~ee~~|VDS= -30V, ID= -12A<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~———~~|QG||17.2|<br>~~e~~|||
|Gate-Source Charge<br>~~———~~|QGS||3.0|<br>~~e~~|||
|Gate-Drain Charge<br>~~———~~<br>~~——————~~|QGD||3.1|<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~———~~<br>~~——————~~|tD(ON)||4.4|<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VGS= -10V, VDS= -30V, RGEN= 3Ω,<br>ID= -12A<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~<br>~~——————~~|tR||23|<br>~~e~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~——————~~|tD(OFF)||34|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~——————~~|tF||42|<br>~~ee~~|||
|BodyDiode Reverse RecoveryTime<br>~~——————~~<br>~~rr~~|tRR<br>~~rr~~|<br>~~rr~~|13.2<br>~~rr~~|<br>~~ee~~<br>~~rr~~|ns<br>~~ee~~<br>~~rr~~|IS= -12A, dI/dt = 100A/μs<br>~~ee~~<br>~~rr~~|
|BodyDiode Reverse RecoveryCharge<br>~~rr~~|QRR<br>~~rr~~|<br>~~rr~~|6.18<br>~~rr~~|<br>~~rr~~|nC<br>~~rr~~||



Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to product testing. 

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DMP6110SVTQ Document number: DS39190 Rev. 2 - 2 

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**DMP6110SVTQ** 

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20.0   20<br>18.0   LK  VGS=-10V   VGS=-4.0V  18  VDS=-5V eee) Ae<br>16.0   1 ko<  VGS=-4.5V  16  e ee an<br>14.0   mesa | | 14  eee) Ae<br> VGS=-5.0V<br>12.0   ) a  V — GS=-3.5V  12  eee Ae<br>10.0   ne 10  a<br>8.0   Ys | 8  eee Ae<br>6.0   Wo 6  eee eee<br>4.0   YY ccw.........  VGS=-3.0V  4  | | 125 ℃ v/, 85 ℃ | | |<br>2.0    VGS=-2.8V  2  150 ℃ 25 ℃<br>-55 ℃<br>0.0   P| 0  ZZ, | | | |<br>0  1  2  3  4  5  1  1.5  2  2.5  3  3.5  4  4.5  5<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>0.14  0.3<br>0.12  0.25<br>0.1   VGS=-4.5V  0.2  ID=-4.5A<br>0.08  0.15<br> VGS=-10V<br>0.06  0.1<br>0.04  0.05  ID=-3.5A<br>0.02  0<br>1  5  9  13  17  21  0  4  8  12  16  20<br>ID, DRAIN-SOURCE CURRENT (A)   VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and  Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>0.14  2<br>VGS=-10V<br>1.8<br>0.12  150 ℃<br>uit ttt tee Pt tt  VGS=-10V, I tt D=-4.5A  tlle<br>125 ℃ 1.6<br>CEE e t L OY<br>0.1<br>1.4<br>a e 85 ℃ a aa<br>0.08  PET | 1.2  A 4<br> VGS=-4.5V, ID=-3.5A<br>25 ℃ 1<br>0.06<br>C O 0.8  E ee<br>-55 ℃<br>0.04<br>Titty e t 0.6  mT) | ttt<br>0.02  FETE ELL 0.4  PEELE<br>1  3  5  7  9  11  13  15  17  19  21  -50  -25  0  25  50  75  100  125  150<br>ID, DRAIN CURRENT(A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 5. Typical On-Resistance vs. Drain Current and  Figure 6. On-Resistance Variation with Temperature<br>Temperature<br>, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) ID<br>(Ω)  (Ω)<br>, DRAIN-SOURCE ON-RESISTANCE  , DRAIN-SOURCE ON-RESISTANCE<br>DS(ON) DS(ON)<br>R R<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE (Ω)<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


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DMP6110SVTQ Document number: DS39190 Rev. 2 - 2 

September 2018 © Diodes Incorporated 

**DMP6110SVTQ** 

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0.14<br>0.12<br>TIT Ti<br> VGS=-4.5V, ID=-3.5A<br>Tee<br>0.1<br>0.08  Sea<br>aa<br>0.06  rs  VGS=-10V, ID=-4.5A<br>0.04  eae<br>=<br>SEE<br>0.02<br>-50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature<br>20<br>18<br>16  ee |<br>14  es ||<br>12<br>10  es  VGS=0V, TA=85 ℃  ||<br>8<br> VGS=0V, TA=125 ℃<br>6  a<br>4   VGS=0V, TA=150 ℃  VGS=0V, TA=25 ℃<br>2<br>-<br> VGS=0V, TA=-55 ℃<br>0  a 7)<br>0  0.3  0.6  0.9  1.2  1.5<br>VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 9. Diode Forward Voltage vs. Current<br>10<br>8<br>6<br>4   VDS=-30V, ID=-12A<br>2<br>0  JL IL ELLE<br>0  2  4  6  8  10  12  14  16  18<br>Qg (nC)<br>Figure 11. Gate Charge<br>(Ω)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br> (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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2.2<br>2<br>LJ tty ttt<br>1.8<br>Se<br>ID=-1mA<br>1.6<br>O S<br>1.4  ID=-250μA<br>COP PS A<br>1.2  —ooOo™SO<br>~<br>1  Pt EET EN<br>0.8  PCE<br>-50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 8. Gate Threshold Variation vs. Junction<br>Temperature<br>10000<br>f=1MHz<br>======——<br>Ciss<br>1000   ee<br>a===>—<br>100   Coss<br>ee ee ee<br>Crss<br>—— — —<br>Se<br>10<br>0  a 5  10  15  20  25  30  35  40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 10. Typical Junction Capacitance<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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100<br>RDS(ON) Limited  PW=100μs<br>PW=1ms<br>10<br>1<br>PW=10ms<br>PW=100ms<br>0.1  TTJ(MAX)A=25 ℃ =150 ℃ PW=1s<br>Single Pulse  PW=10s<br>DUT on 1*MRP board<br>VGS= -10V  DC<br>0.01<br>lll TSE<br>0.1  1  10  100<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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**DMP6110SVTQ** 

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1<br>SSS SSS SSeS SSS am<br>en<br>LeeTTT T|| le mmm iy TT<br>D=0.5<br>E T epee a Ie UR RLLLLIEIE ER TLLIL OUTIL<br>D=0.9<br>D=0.3  eeOTT nt eeeeT.— oscilla TNBa<br>D=0.7<br>0.1  a<br>mE? Al LET LL<br>D=0.1  Sag<br>FE a  otal |<br>mmm| | Ami | | iii oT TP<br>ene. D=0.05   An<br>EN AN<br>e te<br>D=0.02<br>uy LE ieALI LLIN aUII FUTILE|LT<br>0.01  peer I IN EN EEE<br>D=0.01<br>lr | AU<br>D=0.005<br>S [ET] ATill<br>Ht [ACE] RθJA(t)=r(t) * RθJA<br>RθJA=105 ℃ /W<br>D=Single Pulse  Duty Cycle, D=t1 /  t2<br>0.001<br>1E-05  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP6110SVTQ Document number: DS39190 Rev. 2 - 2 

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**DMP6110SVTQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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TSOT26<br>D<br>e1 0 1(4x)<br>E1/2<br>E/2<br>E1 E c<br>Gauge Plane<br>0<br>Seating Plane<br>L<br>L2<br>Dy<br>e b 0 1(4x)<br>A2<br>A1<br>A<br>Seating Plane<br>**----- End of picture text -----**<br>


|**TSOT26**|**TSOT26**|**TSOT26**|**TSOT26**|
|---|---|---|---|
|**Dim**|**Min**|**Max**|**Typ**|
|**A**||1.00||
|**A1**|0.010|0.100||
|**A2**|0.840|0.900||
|**D**|2.800|3.000|2.900|
|**E**<br>**E1**|2.800BSC<br>1.500<br>1.700<br>1.600|||
|**E1**<br>**b**|1.500<br>0.300|1.700<br>0.450|1.600|
|**b**|0.300|0.450||
|**c**|0.120|0.200||
|**e**|0950BSC|||
|**e**<br>**e1 **|0.950BSC<br>1.900BSC|||
|**L**|0.30|0.50||
|**L2**|0.250BSC|||
|**θ**|0°|8°|4°|
|**θ1**|4°|12°||
|**All Dimensions in mm**||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**TSOT26** 

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C<br>Dimensions Value (in mm)<br>‘oo C  0.950<br>Y1 X  0.700<br>Y  1.000<br>Y1  3.199<br>Y<br>X<br>O00: ==<br>**----- End of picture text -----**<br>


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DMP6110SVTQ Document number: DS39190 Rev. 2 - 2 

September 2018 © Diodes Incorporated 

**DMP6110SVTQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP6110SVTQ Document number: DS39190 Rev. 2 - 2 

September 2018 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP6110SVTQ-7/mosfet-aec-q101-p-ch-73a-60v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/diodes-inc/dmp6110svtq-7/mosfet-aec-q101-p-ch-7-3a-60v/dp/3276213)
---

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