# Power MOSFET, P Channel, 60 V, 18.2 A, 0.028 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943812/)

**URL**: https://novapart.co/products/DMP6023LEQ-13/power-mosfet-p-channel-60-v-182-a-0028-ohm-sot-223
**SKU**: DMP6023LEQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3120
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 17.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18.2A |
| Drain Source On State Resistance | 0.028ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943812/)

**DMP6023LEQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET** 

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## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON) Max**|**ID Max**<br>**TA = +25°C**|
|-60V|28mΩ@VGS= -10V|-7A|
||35mΩ@VGS= -4.5V|-6.2A|



## **Features and Benefits** 

- Low On-Resistance 

- Fast Switching Speed 

- Low Threshold 

- Low Gate Drive 

- Low Input Capacitance 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

## **Mechanical Data** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

   - Case: SOT223 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

- Backlighting 

   - Terminals Connections: See Diagram Below 

- Power Management Functions 

   - Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.112 grams (Approximate) 

- DC-DC Converters 

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SOT223<br>**----- End of picture text -----**<br>


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## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP6023LEQ-13|SOT223|2,500/Tape &Reel|



Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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YWW<br>P6023<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking P6023 = Marking Code YWW = Date Code Marking Y or Y= Year (ex: 7 = 2017) WW = Week (01 to 53) 

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**DMP6023LEQ** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= -10V|TA= +25°C<br>TA= +70°C|ID|-7<br>-5.6|A|
||TC= +25°C<br>TC= +70°C|ID|-18.2<br>-14.5|A|
|Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)||IDM|-50|A|
|Maximum Continuous Body Diode Forward Current (Note 5)||IS|-2|A|
|Avalanche Current, L = 0.1mH||IAS|-35.5|A|
|Avalanche Energy, L = 0.1mH||EAS|62.9|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C<br>TA= +70°C|PD|2<br>1.3|W|
|Thermal Resistance, Junction to Ambient (Note 5)||RJA|60|°C/W|
|Total Power Dissipation (Note 5)|TC= +25°C|PD|17.3|W|
|Thermal Resistance, Junction to Case (Note 5)||RJC|7.2|°C/W|
|Operating and Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



|~~a~~<br>~~A~~<br>~~ya~~|~~a~~<br>~~A~~<br>~~ya~~|~~a~~<br>~~A~~<br>~~ya~~|~~a~~<br>~~A~~<br>~~ya~~|~~a~~<br>~~A~~<br>~~ya~~|~~a~~<br>~~A~~<br>~~ya~~|~~a~~<br>~~A~~<br>~~ya~~|
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~a~~<br>~~ya~~|**Symbol**<br>~~a~~<br>~~ya~~|**Min**<br>~~a~~<br>~~A~~<br>~~yaa~~|**Typ **<br>~~a~~<br>~~A~~<br>~~a~~<br>~~ye~~|**Max**<br>~~a~~<br>~~A~~<br>~~yeep~~|**Unit**<br>~~a~~<br>~~ep~~|**Test Condition**<br>~~a~~<br>~~ep~~|
|**OFF CHARACTERISTICS**(Note 6) <br>~~A~~<br>~~yaa~~<br>~~yeep~~|||||||
|Drain-Source Breakdown Voltage<br>~~ya~~|BVDSS<br>~~ya~~|-60<br>~~A~~<br>~~yaa~~|—<br>~~A~~<br>~~a~~<br>~~ye~~|—<br>~~A~~<br>~~yeep~~|V<br>~~ep~~|VGS= 0V, ID= -250μA<br>~~ep~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~ya~~|IDSS<br>~~ya~~|—<br>~~A~~<br>~~ya a~~|—<br>~~A~~<br>~~a~~<br>~~ye~~|-1<br>~~A~~<br>~~ye ep~~|µA<br>~~ep~~|VDS= -60V, VGS= 0V<br>~~ep~~|
|Gate-Source Leakage<br>~~____~~|IGSS<br>~~__~~|—<br>~~__~~|—<br>~~__~~|±100|nA<br>~~<<~~|VGS= ±20V, VDS= 0V<br>~~<<~~|
|**ON CHARACTERISTICS**(Note 6)<br>~~____~~<br>~~<<~~|||||||
|Gate Threshold Voltage<br>~~____~~<br>~~—~~|VGS(TH)<br>~~__~~<br>~~—~~|-1<br>~~__~~<br>~~—~~|—<br>~~__~~<br>~~—~~|-3<br>~~—~~|V<br>~~<<~~<br>~~—~~|VDS= VGS, ID= -250μA<br>~~<<~~<br>~~—~~|
|Static Drain-Source On-Resistance<br>~~____~~<br>~~—~~|RDS(ON)<br>~~__~~<br>~~—~~|—<br>~~__~~<br>~~—~~|—<br>~~__~~<br>~~—~~|28<br>~~—~~|mΩ<br>~~<<~~<br>~~—~~<br>~~GO~~|VGS= -10V, ID= -5A<br>~~<<~~<br>~~—~~|
|||—<br>~~—~~<br>~~GOGO~~|—<br>~~—~~<br>~~GOGO~~|35<br>~~—~~<br>~~GOGO~~||VGS= -4.5V, ID= -4A<br>~~—~~<br>~~GO~~|
|Diode Forward Voltage<br>~~DD~~|VSD<br>~~DD~~|—<br>~~DD~~<br>~~GOGO~~|-0.7<br>~~DD~~<br>~~GOGO~~|-1.2<br>~~DD~~<br>~~GOGO~~|V<br>~~DD~~<br>~~GO~~|VGS= 0V, IS= -1A<br>~~DD~~<br>~~GO~~|
|**DYNAMIC CHARACTERISTICS**(Note 7)<br>~~GOGO~~<br>~~GO~~|||||||
|Input Capacitance<br>~~pT~~|Ciss|—|2569|—|pF|VDS= -30V, VGS= 0V,<br>f = 1MHz|
|Output Capacitance|Coss|—|179|—|pF||
|Reverse Transfer Capacitance|Crss|—|143|—|pF||
|Gate Resistance<br>~~pT~~|Rg|—|8<br>~~GO~~|—|Ω|VDS= 0V, VGS= 0V, f = 1MHz|
|Total Gate Charge(VGS= -4.5V)<br>~~GG~~<br>~~pT~~|Qg<br>~~GG~~|—<br>~~GG~~|26.5<br>~~GG~~<br>~~GO~~|—<br>~~GG~~|nC<br>~~GG~~|VDS= -30V, ID= -5A<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~pT~~|Qg|—|53.1<br>~~GO~~|—|nC||
|Gate-Source Charge|Qgs|—|7.1|—|nC||
|Gate-Drain Charge<br>~~———~~|Qgd|—|12.6|—<br>~~ee~~|nC<br>~~ee~~||
|Turn-On Delay Time<br>~~———~~|tD(ON)|—|6|—<br>~~ee~~|ns<br>~~ee~~|VGS= -10V, VDS= -30V,<br>Rg= 3Ω, ID= -5A<br>~~ee~~|
|Turn-On Rise Time<br>~~———~~|tR|—|7.1|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Delay Time<br>~~———~~|tD(OFF)|—|110|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~———~~|tF|—|62|—<br>~~ee~~|ns<br>~~ee~~||
|Body Diode Reverse Recovery Time<br>~~———~~<br>~~ee~~|tRR<br>~~ee~~|—<br>~~ee~~|20<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|IF= -5A, di/dt = 100A/μs<br>~~ee~~<br>~~ee~~|
|BodyDiode Reverse RecoveryCharge<br>~~———~~<br>~~ee~~|QRR<br>~~ee~~|—<br>~~ee~~|14<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~||



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 

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**DMP6023LEQ** 

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30.0 30<br>VGS = -10V<br>VGS = -5.0V VGS = -3.5V VDS = -5.0V<br>25.0 V GS = -4.5V 25<br>| a BeeGGn! EEE<br>20.0 20<br>PZ VGS = -4.0V Sieeee ee<br>15.0 |e 15 Senne ieee<br>10.0 V GS = -3.0V 10<br>foo Seeees TA = 150C ieee TA = 85C<br>5.0 pee VGS = -2.8V 5 TA = 125C TA = 25C<br>TA = -55C<br>0.0 py 0 De<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.04 0.2<br>)<br>[(] CE 0.035 0.18 PiRi I D = -5.0A | | | tp<br>0.16<br>FERRE ty<br>0.03<br>[SISTAN] E V GS = -4.5V 0.14 I D = -4.0A<br>- [R] 0.025 oi 0.12 AREERE<br>[N] OE VGS  = -10V<br>C 0.02 .i |tT]| tt 0.1 2TELE<br>R<br>[U] O 0.08<br>0.015<br>- [S]<br>fete 0.06 SEC<br>[IN] A<br>R 0.01<br>D 0.04<br>, 0.005 HEEEEE) 0.02 OEE<br>( [ON)]<br>D [S]<br>R<br>0 [tt -E TLL I 0 CEE<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.05 2<br>VGS = -4.5V<br>TA = 150C<br>1.8<br>TA = 125C<br>0.04 panean TA = 85C 1.6 TTT TELL VID GS  = -5A= -4.5V<br>SSR 1.4 ee<br>0.03<br>TA = 25C<br>0.02 EEa 1.2 ittPe<br>TA = -55C 1<br>0.8<br>0.01 PS P| [Pre<br>0.6<br>0 LEE LE 0.4 ACEC EE<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs.  Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)<br>ID<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>D<br>, DRAIN CURRENT (A)<br>I<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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Document number: DS39935  Rev. 1 - 2 

**DMP6023LEQ** 

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0.05 3<br>2.8<br>0.045<br>| | | | | ft | fy [V)] 2.6 CS<br>[E(] G<br>0.04 Pt | | | tt Le 2.4 i<br>0.035 TEP eee [LTA] OV 2.22 —— -ID =1mA<br>0.03 | | | | [odrH VIDGS  -5=   -4.= A 5V 1.81.6 a -ID = 250µA eee<br>0.025<br>annra =<br>1.4<br>0.02 T [HRESHOLD] 1.2<br>1<br>0.015<br>Scere ey [ATE] G 0.8 GREE<br>0.01 See , 0.6 EEE<br>0.005 V [(TH)] GS 0.4<br>0.2<br>0 Ff | | ft ft ft fy 0 (|i {|es| | [| | [| [|<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>30 10000<br>f = 1MHz<br>A Oe<br>25 a es ee es ee es<br>— Ciss<br>oe<br>20 eee $<<br>15 er TA= 150C a 1000 CCE<br>10 _ T A = 125C HT T A = 25C ——————<br>5 TA= 85C Aly L-} TA= -55C ————— Coss<br>thy | P NS—— | |__|<br>Crss<br>0 DS 100 i...<br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 SOA, Safe Operation Area<br>100<br>9 R DS(ON)<br>Limited<br>8 / PUL NO TIN<br>7 10<br>[A)] (<br>T<br>6 [N] E<br>R<br>5 V DS = -30V RU<br>ID = -5A C 1<br>DC<br>4<br>[IN] RA PW = 10s<br>3 D PW = 1s<br>D PW = 100ms<br>2 I [,] 0.1 TJ(MAX) = +150°C PW = 10ms<br>TA = +25°C PW = 1ms<br>1 7A TT | TLE VGS = -10V aH PW = 100µs SESS EEEH<br>Single Pulse eT<br>DUT on 1 * MRP Board<br>0 0 FLEET 5 10 15 20 25 ETT 30 35 40 TTT 45 50 | 55 0.01 CIEL NT T<br>Figure 11 Gate-Charge CharacteristicsQg, TOTAL GATE CHARGE (nC) 0.1 VDS , DRAIN-SOURCE VOLTAGE (V)1 10 100<br>Figure 12 SOA, Safe Operation Area<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>, DRAIN CURRENT (A)<br>ID<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


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July 2017 

© Diodes Incorporated 

Document number: DS39935  Rev. 1 - 2 

**DMP6023LEQ** 

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1 De<br>a D = 0.9 Ss Ss Scee<br>se D = 0.7 a a SSa! at aeol<br>CE D = 0.5<br>N a ee<br>D = 0.3 ST AAA<br>PAINT TTT EEETTP=<br>[SISTA] RE 0.1 D = 0.1 resa el eead<br>A [L] acesa A  ces ceeee OOneeatkce OeenceOemae Oe Oe Oe| eeeOOnc Lt encna0| |<br>M lle | | me<br>D = 0.05<br>[R] E TALT Cree i ol<br>T [H] 7TTT A Lt20|  |<br>T D = 0.02<br>N<br>I [E] SN 0.01 Sea D = 0.01  a cl 7, eee eee eee eet een TT TT<br>A Lert TPA TTT<br>T [R] a D = 0.005 RθJA(t)=r(t) * RθJA TyHH<br>LIAZ RθJA=101°C/W HHT<br>r [(t),] Single Pulse<br>Duty Cycle, D = t1/t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME(sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP6023LEQ Document number: DS39935  Rev. 1 - 2 

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**DMP6023LEQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223** 

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D<br>b1 Q<br>C<br>SOT223<br>Dim  Min  Max  Typ<br>A 1.55 1.65 1.60<br>A1 0.010 0.15 0.05<br>b 0.60 0.80 0.70<br>b1 2.90  3.10  3.00<br>E E1<br>Ee C 0.20  0.30  0.25<br>D 6.45  6.55  6.50<br>Gauge<br>Plane E 3.45  3.55  3.50<br>0.25 E1 6.90  7.10  7.00<br>Seating L e -  -  4.60<br>Plane<br>e1 -  -  2.30<br>e1 b L 0.85  1.05  0.95<br>e Q 0.84  0.94  0.89<br>All Dimensions in mm<br>A A1 7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**SOT223** 

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X1<br>Y1<br>C1 Y2<br>Y<br>goo. X C<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C 2.30<br>C1  6.40<br>X  1.20<br>X1  3.30<br>Y  1.60<br>Y1  1.60<br>Y2  8.00<br>**----- End of picture text -----**<br>


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DMP6023LEQ Document number: DS39935  Rev. 1 - 2 

July 2017 © Diodes Incorporated 

**DMP6023LEQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP6023LEQ Document number: DS39935  Rev. 1 - 2 

July 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP6023LEQ-13/power-mosfet-p-channel-60-v-182-a-0028-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp6023leq-13/mosfet-p-ch-60v-18-2a-sot-223/dp/3943812)
---

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