# Power MOSFET, P Channel, 60 V, 18.2 A, 0.028 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3127372RL/)

**URL**: https://novapart.co/products/DMP6023LE-13/power-mosfet-p-channel-60-v-182-a-0028-ohm-sot-223
**SKU**: DMP6023LE-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4240
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-18.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 17.3W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 17.3W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.028ohm |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18.2A |
| Drain Source On State Resistance | 0.028ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127372RL/)

**DMP6023LE** 

**60V P-CHANNEL ENHANCEMENT MODE MOSFET** 

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## **Product Summary** 

|**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>-60V<br>28mΩ@VGS= -10V<br>-7A<br>35mΩ@VGS= -4.5V<br>-6.2A<br>~~a~~|**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>-60V<br>28mΩ@VGS= -10V<br>-7A<br>35mΩ@VGS= -4.5V<br>-6.2A<br>~~a~~|**V(BR)DSS**<br>**RDS(ON) max**<br>**ID max**<br>**TA = +25°C**<br>-60V<br>28mΩ@VGS= -10V<br>-7A<br>35mΩ@VGS= -4.5V<br>-6.2A<br>~~a~~|
|---|---|---|
|**V(BR)DSS**|**RDS(ON) max**|**ID max**<br>**TA = +25°C**|
|-60V|28mΩ@VGS= -10V|-7A|
||35mΩ@VGS= -4.5V|-6.2A|



## **Features and Benefits** 

- Low On-Resistance 

- Fast Switching Speed 

- Low Threshold 

- Low Gate Drive 

- Low Input Capacitance 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description and Applications** 

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: SOT223 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

   - Terminals Connections: See Diagram Below 

- Backlighting 

   - Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Power Management Functions 

- DC-DC Converters 

|DC-DC Converters||Solderable per MIL-STD-202, Method 208|Solderable per MIL-STD-202, Method 208|Solderable per MIL-STD-202, Method 208|Solderable per MIL-STD-202, Method 208|
|---|---|---|---|---|---|
|||Weight: 0.112 grams (Approximate)||Weight: 0.112 grams (Approximate)||
||||||**D**|
|SOT223<br>~~*~~|~~*~~<br>i:|||**G**<br>~~*~~|**S**<br>~~*~~<br>~~&~~|
|Top View|Pin Out - Top View||||Equivalent Circuit|
|**Ordering Information** (Note 4)||||||
|||||||
|**Part Number**|**Compliance**|||**Case**|**Packaging**|
|DMP6023LE-13|Standard|||SOT223|2,500/Tape&Reel|



## **Ordering Information** (Note 4) 

- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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YWW<br>P6023<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking P6023 = Marking Code YWW = Date Code Marking Y or Y= Year (ex: 4 = 2014) WW = Week (01 - 53) 

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DMP6023LE Document number: DS37199  Rev. 3 - 2 

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**DMP6023LE** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage||VDSS|-60|V|
|Gate-Source Voltage||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= -10V|TA= +25°C<br>TA= +70°C|ID|-7<br>-5.6|A|
||TC= +25°C<br>TC= +70°C|ID|-18.2<br>-14.5|A|
|Pulsed Drain Current (10µs pulse, duty cycle = 1%)||IDM|-50|A|
|Maximum Continuous Body Diode Forward Current (Note 5)||IS|-2|A|
|Avalanche Current, L = 0.1mH||IAS|-35.5|A|
|Avalanche Energy, L = 0.1mH||EAS|62.9|mJ|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 5)|TA= +25°C<br>TA= +70°C|PD|2<br>1.3|W|
|Thermal Resistance, Junction to Ambient (Note 5)||RJA|60|°C/W|
|Total Power Dissipation (Note 5)|TC= +25°C|PD|17.3|W|
|Thermal Resistance, Junction to Case (Note 5)||RJC|7.2|°C/W|
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ **<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**(Note 6) <br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-60<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V, ID= -250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~oe~~|IDSS<br>~~oe~~|—<br>~~oe~~|—<br>~~oe~~|-1<br>~~oe~~|µA<br>~~oe~~|VDS= -60V, VGS= 0V<br>~~oe~~|
|Gate-Source Leakage<br>~~oe~~|IGSS<br>~~oe~~|—<br>~~oe~~|—<br>~~oe~~|±100<br>~~oe~~|nA<br>~~oe~~|VGS= ±20V, VDS= 0V<br>~~oe~~|
|**ON CHARACTERISTICS**(Note 6)<br>~~ee~~|||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(th)<br>~~ee~~|-1<br>~~ee~~|—<br>~~ee~~|-3<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= -250μA<br>~~ee~~|
|Static Drain-Source On-Resistance<br>~~a~~|RDS(ON)<br>~~a~~|—<br>~~a~~|—<br>~~a~~|28<br>~~a~~|mΩ<br>~~a~~|VGS= -10V, ID= -5A<br>~~a~~|
|||—<br>~~a~~|—<br>~~a~~|35<br>~~a~~||VGS= -4.5V, ID= -4A<br>~~a~~|
|Diode Forward Voltage<br>~~es~~|VSD<br>~~es~~|—<br>~~es~~|-0.7<br>~~es~~|-1.2<br>~~es~~|V<br>~~es~~|VGS= 0V, IS= -1A<br>~~es~~|
|**DYNAMIC CHARACTERISTICS**(Note 7)<br>~~es~~|||||||
|Input Capacitance<br>~~ne~~|Ciss<br>~~ne~~|—<br>~~ne~~|2569<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~|VDS= -30V, VGS= 0V,<br>f = 1MHz<br>~~ne~~|
|Output Capacitance<br>~~ne~~|Coss<br>~~ne~~|—<br>~~ne~~|179<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|Reverse Transfer Capacitance<br>~~ne~~|Crss<br>~~ne~~|—<br>~~ne~~|143<br>~~ne~~|—<br>~~ne~~|pF<br>~~ne~~||
|Gate Resistance<br>~~ee~~<br>~~———_—~~|Rg<br>~~ee~~<br>~~———_—~~|—<br>~~ee~~|8<br>~~ee~~|—<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ee~~<br>~~eee~~|
|Total Gate Charge(VGS= -4.5V)<br>~~ee~~<br>~~———_—~~|Qg<br>~~ee~~<br>~~———_—~~|—<br>~~ee~~|26.5<br>~~ee~~|—<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~|VDS= -30V, ID= -5A<br>~~ee~~<br>~~eee~~<br>~~ee~~|
|Total Gate Charge(VGS= -10V)<br>~~ee~~<br>~~———_—~~|Qg<br>~~ee~~<br>~~———_—~~|—<br>~~ee~~|53.1<br>~~ee~~|—<br>~~ee~~<br>~~e~~|nC<br>~~ee~~<br>~~e~~||
|Gate-Source Charge<br>~~———_—~~|Qgs<br>~~———_—~~|—|7.1|—<br>~~e~~|nC<br>~~e~~||
|Gate-Drain Charge<br>~~———_—~~<br>~~———~~|Qgd<br>~~———_—~~|—|12.6|—<br>~~e~~<br>~~ee~~|nC<br>~~e~~<br>~~ee~~||
|Turn-On Delay Time<br>~~———_—~~<br>~~———~~|tD(on) <br>~~———_—~~|—|6|—<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VGS= -10V, VDS= -30V,<br>RG= 3Ω, ID= -5A<br>~~eee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~———_—~~<br>~~———~~|tr<br>~~———_—~~|—|7.1|—<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~||
|Turn-Off Delay Time<br>~~———~~|tD(off)|—|110|—<br>~~ee~~|ns<br>~~ee~~||
|Turn-Off Fall Time<br>~~———~~|tf|—<br>~~ee~~|62<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Body Diode Reverse Recovery Time<br>~~———~~<br>~~——————~~|trr<br>~~——————~~|—<br>~~——————~~<br>~~ee~~|20<br>~~——————~~<br>~~ee~~|—<br>~~ee~~<br>~~——————~~<br>~~ee~~|nS<br>~~ee~~<br>~~——————~~<br>~~ee~~|IF= -5A, di/dt = 100A/μs<br>~~ee~~<br>~~——————~~|
|Body Diode Reverse Recovery Charge<br>~~——————~~|Qrr<br>~~——————~~|—<br>~~——————~~<br>~~ee~~|14<br>~~——————~~<br>~~ee~~|—<br>~~——————~~<br>~~ee~~|nC<br>~~——————~~<br>~~ee~~||



6. Short duration pulse test used to minimize self-heating effect. 

7. Guaranteed by design. Not subject to product testing. 

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**DMP6023LE** 

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30.0 30<br>VGS = -10V<br>VGS = -5.0V VGS = -3.5V VDS = -5.0V<br>25.0 iF V GS = -4.5V UE 25 LLL<br>20.0 20<br>Vaan Saenee eee<br>VGS = -4.0V<br>15.0 | a 15 ceeeee ieee<br>10.0 fo V GS = -3.0V 10 yp<br>TA = 150C TA = 85C<br>5.0 pea VGS = -2.8V 5 TA = 125C TA = 25C<br>TA = -55C<br>0.0 py 0 cao) seen<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics<br>0.04 0.2<br>0.035 0.18 ID = -5.0A<br>0.16<br>0.03<br>EEE VGS = -4.5V 0.14 CHEE I D = -4.0A<br>0.025<br>0.12<br>VGS = -10V<br>0.02 oeTt] ft 0.1 EEE“AEE EEE<br>TTT 0.08 CAEL<br>0.015<br>0.06<br>0.01<br>0.04<br>Peer AREER<br>0.005 0.02<br>0 a 0 SPREE CEEEE<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20<br>ID, DRAIN SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3 Typical On-Resistance vs.  Figure 4 Typical Transfer Characteristics<br>Drain Current and Gate Voltage<br>0.05 2<br>VGS = -4.5V<br>TA = 150C<br>1.8<br>TA = 125C<br>0.04 pana TA = 85C 1.6 TTT LLILLL, VID GS  = -5A= -4.5V<br>1.4<br>0.03<br>TA = 25C<br>1.2<br>0.02 ASE nace<br>TA = -55C 1<br>0.8<br>0.01<br>SSS 0.6 THE<br>0 aaa 0.4 CCE<br>0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C)<br>Figure 5 Typical On-Resistance vs.  Figure 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>, DRAIN-SOURCE ON-RESISTANCE ( ON-RESISTANCE (NORMALIZED)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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0.05 3<br>2.8<br>0.045<br>Pt] { {dT dt hy 2.6 ee<br>0.04 PT tT; tle 2.4 a<br>2.2<br>0.035 a SS -ID = 1mA<br>2<br>0.03 rt de VID GS   -5= ra   -4.= A 5V 1.81.6 ase— -I D = 250µA<br>0.025<br>Sore 1.4 ae<br>0.02 Ter CET 1.2 FSS<br>1<br>0.015 Anne a<br>— 0.8 ee es<br>0.01 Pf | | | ft ft fl 0.6 a<br>0.4<br>0.005<br>0.2<br>0 Ft | | ft ft ft 0 pF es | | [| [ [| ff ft<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature<br>30 10000<br>f = 1MHz<br>ee |e aSessa<br>25<br>@_—~—_"_ C iss<br>ee | a<br>20 en || P|PeePee<br>15 TA= 150C ae 1000 SER<br>10 eee TA= 125  C / “7 T A = 25C AX=aft=aftft<br>5 TA= 85C df}Al | TA= -55C RSE— eRe— eRe eRe Cossoss<br>Crssrss<br>0 Wy Vi 100 te...>><br>0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance<br>10 SOA, Safe Operation Area<br>100<br>9 R DS(on)<br>Limited<br>8 / Py PRLTONGPNTGIFTONGPNTGIFTGIF<br>7 10<br>6<br>5 V DS = -30V<br>ID = -5A 1<br>DC<br>4<br>P W  = 10s<br>3 PW = 1sW = 1s = 1s<br>2 0.1 T J(max) = +150°C°CC PW = 100msW = 100ms = 100ms PW = 10msW = 10ms = 10ms<br>TA = +25°CA = +25°C = +25°C PW = 1msW = 1ms = 1ms<br>1 VGS = 10VGS = 10V = 10V P W  = 100µs<br>Single Pulseingle Pulsegle Pulsele Pulsee Pulse Pulseulselsese<br>DUT on 1 * MRP Board<br>00 5 10 15 20 25 30 35 40 45 50 55 0.01 COIL<br>0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC) VDSDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Gate-Charge Characteristics<br>)<br>, DRAIN-SOURCE ON-RESISTANCE ( , GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>IS<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>, GATE-SOURCE VOLTAGE (V) IDD<br>GS<br>V<br>**----- End of picture text -----**<br>


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10000<br>f = 1MHz<br>SessaaSessa<br>@_—~—_"_ C iss<br>a<br>P|PeePee<br>1000 SER<br>AX=aft=aftft<br>Cossoss<br>RSE— eRe— eRe eRe<br>Crssrss<br>100 te...>><br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)DS, DRAIN-SOURCE VOLTAGE (V), DRAIN-SOURCE VOLTAGE (V)<br>Figure 10 Typical Junction Capacitance<br>SOA, Safe Operation Area<br>100<br>R DS(on)<br>Py Limited PRLTONGPNTGIFTONGPNTGIFTGIF<br>10<br>1<br>DC<br>P W  = 10s<br>PW = 1sW = 1s = 1s<br>PW = 100msW = 100ms = 100ms<br>0.1 T J(max) = +150°C°CC PW = 10msW = 10ms = 10ms<br>TA = +25°CA = +25°C = +25°C PW = 1msW = 1ms = 1ms<br>VGS = 10VGS = 10V = 10V P W  = 100µs<br>Single Pulseingle Pulsegle Pulsele Pulsee Pulse Pulseulselsese<br>DUT on 1 * MRP Board<br>0.01 COIL<br>0.1 1 10 100<br>VDSDS , DRAIN-SOURCE VOLTAGE (V)<br>Figure 12 SOA, Safe Operation Area<br>, JUNCTION CAPACITANCE (pF)<br>T<br>C<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMP6023LE Document number: DS37199  Rev. 3 - 2 

January 2015 © Diodes Incorporated 

**DMP6023LE** | 

## 'n ¢C OR PORATED LIES. 

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1 D = 0.9<br>SSS SSS SSS SSS SS<br>eer D = 0.7<br>D = 0.5 Ot<br>Bo I [So] ee<br>D = 0.3<br>PR a a<br>0.1 D = 0.1 a<br>LSS oat aiffML<br>SEHEE<br>D = 0.05<br>PH ea A HER AE HE HH<br>7<br>D = 0.02<br>a A a<br>0.01 ea D = 0.01 aZAMPry<br>*<br>oh) D = 0.005 care renee ee Rthja(t)=r(t)   Rthja =<br>Pet HE Ht<br>Poet PT Rthja=101C/W HT<br>Single Pulse Duty Cycle, D=t1 /  t2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP6023LE Document number: DS37199  Rev. 3 - 2 

January 2015 © Diodes Incorporated 

**DMP6023LE** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

**==> picture [453 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>~ ~ b1 | Q<br>C<br>SOT223<br>A rT Dim   oT Min  [| Max  T_T Typ<br>A 1.55  1.65  1.60<br>7 es——————————<br>A1 0.010  0.15  0.05<br>i es<br>b 0.60  0.80  0.70<br>b1 2.90  3.10  3.00<br>E E1 es<br>C 0.20  0.30  0.25<br>| es D 6.45  ee 6.55  6.50<br>Gauge<br>Plane |B | es E 3.45  ee 3.55  3.50<br>0.25 E1 6.90  7.10  7.00<br>Seating K- L esre e eees -  -  4.60<br>Plane<br>e1 -  -  2.30<br>e1 b L 0.85  1.05  0.95<br>ee \ | es<br>e Q 0.84  0.94  0.89<br>| . - L e es<br>ST All Dimensions in mm<br>ensu A A1 e<br>7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [157 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
Tt<br>A i<br>! !<br>_ . | x |< ¢ —!<br>X 1<br>Y 1<br>C1 Y2<br>Y<br>X C<br>**----- End of picture text -----**<br>


|**Dimensions V**|**Value (in mm)**|
|---|---|
|**C**|2.30|
|**C1 **|6.40|
|**X**|1.20|
|**X1**|3.30|
|**Y**|1.60|
|**Y1**|1.60|
|**Y2**|8.00|



6 of 7 **www.diodes.com** 

DMP6023LE Document number: DS37199  Rev. 3 - 2 

January 2015 © Diodes Incorporated 

**DMP6023LE** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP6023LE Document number: DS37199  Rev. 3 - 2 

January 2015 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP6023LE-13/power-mosfet-p-channel-60-v-182-a-0028-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp6023le-13/mosfet-p-ch-60v-18-2a-sot223/dp/3127372RL)
---

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