# Power MOSFET, P Channel, 50 V, 180 mA, 6 ohm, X1-DFN1006, Surface Mount

![Product image](https://novapart.co/image/farnell:3943810RL/)

**URL**: https://novapart.co/products/DMP58D0LFB-7/power-mosfet-p-channel-50-v-180-ma-6-ohm-x1
**SKU**: DMP58D0LFB-7
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0690
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 470mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 5V |
| Transistor Case Style | X1-DFN1006 |
| Drain Source Voltage Vds | 50V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 180mA |
| Drain Source On State Resistance | 6ohm |
| Gate Source Threshold Voltage Max | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943810RL/)

~~@~~ **Green** 

**DMP58D0LFB** 

## **P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**BVDSS**|**RDS(ON)**|**Package**|**ID **<br>**TA = +25°C**|
|---|---|---|---|
|-50V|8Ω@VGS= -5V|X1-DFN1006-3|-310mA|



## **Features** 

- Low On-Resistance 

- Low Input Capacitance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **ESD Protected 1kV** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

- Battery Operated Systems and Solid-State Relays 

- Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. 

- Case: X1-DFN1006-3 

- Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish - NiPdAu. Solderable per MIL-STD-202, Method 208 **e4** 

- Weight: 0.001 grams (Approximate) 

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X1-DFN1006-3<br>ESD PROTECTED pei<br>**----- End of picture text -----**<br>


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Drain<br>S<br>D Gate<br>G<br>   Gate<br>   Protection Source<br>#    Diode<br>Top View<br>Pin-Out  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

||||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP58D0LFB-7|X1-DFN1006-3|3,000 / Tape & Reel|
|DMP58D0LFB-7B|X1-DFN1006-3|10,000 / Tape & Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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**DMP58D0LFB** 

## **Marking Information** 

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NZ  From date code 1527 (YYWW),  NZ<br>this changes to:<br>Top View  Top View<br>Dot Denotes Drain Side  Bar Denotes Gate and Source Side<br>DMP58D0LFB-7<br>a ss $$$ 44<br>NZ<br>Top View<br>Bar Denotes Gate and Source Side  NZ = Part Marking Code<br>DMP58D0LFB-7B<br>$$ $eos<br>NZ  NZ  NZ<br>NZ  NZ  NZ<br>NZ  NZ  NZ<br>**----- End of picture text -----**<br>


**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|||VDSS|-50|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 5) VGS= -5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-180<br>-150|mA|
|Continuous Drain Current (Note 6) VGS= -5V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|-310<br>-250|mA|
|Pulsed Drain Current(Note 7)|||IDM|-500|mA|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Power Dissipation(Note 5)|PD|0.47|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 5)|RθJA|258|°C/W|
|Power Dissipation(Note 6)|PD|1.22|W|
|Thermal Resistance,Junction to Ambient@TA= +25°C(Note 6)|RθJA|105|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~_~~|**Symbol**<br>|**Min**<br>|**Typ**<br>|**Max**<br>|**Unit**<br>|**Test Condition**<br>|
|**OFF CHARACTERISTICS(Note 8)**<br>~~_~~|||||||
|Drain-Source Breakdown Voltage<br>~~_~~|BVDSS<br>|-50<br>|—<br>|—<br>|V<br>|VGS= 0V,ID= -250μA<br>|
|Zero Gate Voltage Drain Current TJ= +25°C<br>~~_er~~|IDSS<br>~~er~~|—<br>~~er~~|—<br>~~er~~|-1.0<br>~~er~~|µA<br>~~er~~|VDS= -50V,VGS= 0V<br>~~er~~|
|Gate-Source Leakage<br>~~er~~|IGSS<br>~~er~~|—<br>~~er~~|—<br>~~er~~|±5<br>~~er~~|µA<br>~~er~~|VGS= ±20V,VDS= 0V<br>~~er~~|
|**ON CHARACTERISTICS(Note 8)**|||||||
|Gate Threshold Voltage|VGS(TH)|-0.8|—|-2.1|V|VDS= VGS,ID= -250μA|
|Static Drain-Source On-Resistance<br>~~Dn~~|RDS(ON)<br>~~Dn~~|—<br>~~Dn~~|6<br>~~Dn~~|8<br>~~Dn~~|Ω<br>~~Dn~~|VGS= -5V,ID= -100mA<br>~~Dn~~|
|||—<br>~~Dn~~|12<br>~~Dn~~|18<br>~~Dn~~|Ω<br>~~Dn~~|VGS= -2.5V,ID= -10mA<br>~~Dn~~|
|Forward Transfer Admittance<br>~~ef~~||Yfs|<br>~~ef~~|0.05<br>~~ef~~|—<br>~~ef~~|—<br>~~ef~~|S<br>~~ef~~|VDS= -25V,ID= -100mA<br>~~ef~~|
|**DYNAMIC CHARACTERISTICS(Note 9)**|||||||
|Input Capacitance|Ciss|—|27|—|pF<br>~~a~~|VDS= -25V, VGS= 0V,<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance|Coss|—|4.0|—|||
|Reverse Transfer Capacitance|Crss|—|1.4<br>~~a~~|—<br>~~a~~|||
|Turn-On DelayTime<br>~~—<—~~|tD(ON)<br>~~—<—~~|—<br>~~—<—~~|30.7<br>~~—<—~~<br>~~a~~|—<br>~~—<—~~<br>~~a~~|ns<br>~~—<—~~<br>~~a~~|VGS= -4.5V, VDS= -30V,<br>RG= 50Ω, ID= -10mA<br>~~—<—~~<br>~~ee~~|
|Turn-On Rise Time<br>~~—<—~~|tR<br>~~—<—~~|—<br>~~—<—~~|84.1<br>~~—<—~~<br>~~a~~|—<br>~~—<—~~<br>~~a~~|||
|Turn-Off DelayTime<br>~~—<—~~|tD(OFF)<br>~~—<—~~|—<br>~~—<—~~|201.8<br>~~—<—~~<br>~~a~~|—<br>~~—<—~~<br>~~a~~|||
|Turn-Off Fall Time<br>~~—<—~~|tF<br>~~—<—~~|—<br>~~—<—~~|32.2<br>~~—<—~~<br>~~a~~|—<br>~~—<—~~<br>~~a~~|||



7. Repetitive rating, pulse width limited by junction temperature. 

8. Short duration pulse test used to minimize self-heating effect. 

9. Guaranteed by design. Not subject to production testing. 

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DMP58D0LFB<br>0.3 0.3<br>V     = -10VGS V     = -5VGS T   = 85°CA<br>V     = -4.0VGS<br>0.25 0.25 T   = 25°CA T   = 150°CA<br>) [A] N [T(] 0.2 on))//aeeee V     = -5.0VGS V     = -4.5VGS [A)] T [(] 0.2 Haan T   = -55°CA ye T   = 125°CA<br>an//Aneeeee [N] E Lf<br>V     = -3.0VGS R<br>R<br>U<br>C [URRE] 0.15 C 0.15<br>foo<br>I [N] [IN] A<br>R<br>D [RA] 0.1 V     = -2.5VGS D 0.1<br>, D fo D fe<br>I I [,]<br>0.05 V     = -2.0VGS 0.05<br>V      = -1.8VGS<br>y—><br>0 Le 0 4A<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>12 16<br>) )( VGS = -4.5V<br>10 V      = -2.5VGS CNE 14 T   = 150°CA<br>TA T   = 125°CA<br>12<br>ee I [S] S e e<br>E<br>8<br>[RESISTANCE(] -f{ {| fff - [R] 10 oa<br>[N-] O V     = -4.5VGS [N] OE<br>6 CR 8 T   = 85°CA<br>es es<br>[U] O<br>6<br>[SOURCE] 4 V     = -10VGS - [N][S] IA T   = 25°CA<br>aeee ee eee R 4 aee<br>D [RAIN-] D<br>, [)] N 2 ,<br>[S(O] D ae SS ( [ON)] D [S] 2 ie T   = -55°CA<br>R R<br>0 Trt 0 a<br>0 0.05 0.1 0.15 0.2 0.25 0.3 0 0.05 0.1 0.15 0.2 0.25 0.3<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance  Fig. 4 On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 12<br>)<br>V     = -10VI   = -300mADGS ( VGS = -5V,<br>1.5 N [CE] 10 ID = -150mA<br>V     = -5VGS T [A]<br>R [ESISTANCE] I   = -150mAD I [S] S<br>1.3 oe 8 yy<br>[N] O<br>Fit Ye {ttt he<br>[ZED)] I O [N-RE]<br>A [L]<br>M 1.1 6<br>TO A eet VGS = -10V,<br>ID = -300mA<br>[SOURCE] O [URCE]<br>[NOR] ( 0.9 4<br>EEVaneee E2224<br>D [RAIN-] I [N-S]<br>, [)] N D [RA]<br>O(D [S] 0.7 PZGnnEE , ) 2 TT LTT<br>R ( [ON] S<br>D<br>0.5 GERRaee R 0 FETE<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 T yy 100 125 150<br>T  , JUNCTION TEMPERATURE (°C)J TJ , JUNCTION TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance vs. Temperature<br>, DRAIN CURRENT (A)  , DRAIN CURRENT (A)<br>D D<br>-I -I<br>)  )<br> <br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)  )<br> <br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>**----- End of picture text -----**<br>


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© Diodes Incorporated 

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2.5 0.3<br>[V)]<br>0.25<br>2<br>[A)] (T<br>[OLTAGE(] V [N] E 0.2<br>R<br>[LD] O 1.5 I    = -1mAD RU T   = 25°CA<br>Se | C 0.15 e<br>[SH] RE CRE<br>T [H] 1 I   = -250µAD<br>0.1<br>[OU] S<br>G [ATE] I [,] S<br>, ) 0.5 s s 0.05 ae<br>( [TH]<br>G [S]<br>V<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1 1.2<br>T  , AMBIENT TEMPERATURE (°C)A -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>100 35<br>f = 1MHz<br>[/<br>T   = 150°CA<br>30<br>) a ee Ciss<br>) 25<br>N [T(nA] [pF] (<br>T   = 125°CA N [CE] A 20<br>C [URRE] 10 aaa T   = 85°CA C [IT] TEE<br>G [E] A Sa eee AP 15<br>KA —— C [A]<br>L [E] T   = 25°CA C [,] T 10<br>, S<br>S<br>- [I] D HA > Seea = Coss<br>5<br>Crss<br>1 0 St| TtCd (tsSSOOCOSSSCS*Sd<br>{ttt | ___|<br>0 5 10 15 20 25 30 0 -4 -8 -12 -16 -20<br>-VDS, DRAIN-SOURCE VOLTAGE (V) V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 9 Typical Drain-Source Leakage Current vs. Voltage Fig. 10 Typical Junction Capacitance<br>1<br>RDS(ON) -I   (A) @P  =100µsD               W -I   (A) @P  =1msD               W<br>Limited COOPee [NANT] INTINN [ TENNENT] SS aT<br>ANNE ON<br>) -I   (A) @ DCD<br>0.1<br>N [T(A] -I   (A) @P  =10sD               W<br>-I   (A) @P  =1sD               W<br>C [URRE] -I   (A) @P  =100msD               W<br>I [N]<br>0.01 | -I   (A) @P  =10msD               W RN<br>D [RA] MI eee ESS<br>, D<br>I<br>a ad<br>T          = 150T  = 25Single PulseJ(MAX) A °C °C -I   (A) @P   =10µsDW<br>0.001 Eett<br>0.1 1 10 100<br>-V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Fig. 11 SOA, Safe Operation Area<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V)  -I<br>GS(TH)<br>-V<br>, CAPACITANCE (pF)<br>T<br>, LEAKAGE CURRENT (nA)  C<br>DSS<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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1 ES<br>P=Sene oe<br>Fo =06+ EE mHeee ee ae<br>peesTTTMT LCT Poet NeCTI CM Tc<br>0.1 II er TUTTI LUI FELIU TEE ATI<br>DeO1 fiSm2 Peg INEeb LETITIAnee<br>a a<br>D008 TAA EEE<br>a A<br>Pr re A A<br>0.01 ee7A AUTE ELT UTE ELITE ETT Ti<br>Da OO font Ei<br>a SH EtEEE<br>p= 0.00 I ETITTET R θJA (t) = r(t) * RR  EEE JA (t) = r(t) * R θJA JA IHTH<br>Ly [er] RθJA = 54RJA ℃ = 54/W  癈 /W<br>Duty Cycle, D = t1 / t2 Duty Cycle, D = t1/ t2<br>0.001 eee CME CHUM CUM CIEL LU i<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)t1, PULSE DURATION TIME (sec)<br>Fig. 12 Transient Thermal ResistanceFig. 12 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **X1-DFN1006-3** 

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X1-DFN1006-3<br>| ee [<br>A A1 Dim  Min  Max Typ<br>A  0.47  0.53 0.50<br>| ___ __ 7 Seating Plane ee e A1  es 0 es .00 0 ee .05 0.03<br>b 0.10 0.20 0.15<br>oT ee b2  ee 0.45 0.55 0.50<br>_ D - ee ee es<br>— Pin #1 ID b es D  0.95 1.075 1.00<br>E  0.55 0.675 0.60<br>e  -  -  0.35<br>+ ~ — ee<br>i: i= eeee L1 L2  00.2.200 00..3030 00.2.255<br>E b2 e L3 -  -  0.40<br>' A es<br>z  0.02  0.08 0.05<br>All Dimensions in mm<br>| — —t{ eesdee<br>| es ee ee<br>z<br>L2 L3 L1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

**X1-DFN1006-3** 

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Y C<br>Y1<br>G2 | - -<br>X G1<br>X1<br>**----- End of picture text -----**<br>


|**Dimensions**<br>**Value**|**Value(in mm)**|
|---|---|
|**C**|0.70|
|**G1**|0.30|
|**G2**|0.20|
|**X**|0.40|
|**X1**|1.10|
|**Y**|0.25|
|**Y1**|0.70|



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**DMP58D0LFB** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

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DMP58D0LFB Document number: DS35206  Rev. 10 - 2 

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## Links

- [View this product on Novapart](https://novapart.co/products/DMP58D0LFB-7/power-mosfet-p-channel-50-v-180-ma-6-ohm-x1)
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- [Supplier page](https://es.farnell.com/diodes-inc/dmp58d0lfb-7/mosfet-p-ch-50v-0-18a-x1-dfn1006/dp/3943810RL)
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