# Power MOSFET, P Channel, 450 V, 600 mA, 13 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3943806RL/)

**URL**: https://novapart.co/products/DMP45H21DHE-13/power-mosfet-p-channel-450-v-600-ma-13-ohm-sot-223
**SKU**: DMP45H21DHE-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1990
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 12.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 450V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 600mA |
| Drain Source On State Resistance | 13ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943806RL/)

**450V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **DMP45H21DHE** 

## **Product Summary** 

|**BVDSS**|**RDS(ON)**|**ID**<br>**TC = +25****C**|
|---|---|---|
|-450V|21@ VGS= -10V|-0.6A|



## **Features and Benefits** 

- Low Gate Drive 

- Low Input Capacitance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

## **Description** 

This 450V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high-voltage switching circuits. 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Case: SOT223 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals Connections: See Diagram Below 

## **Applications** 

## ~~a~~ 

 Load Switching 

   - Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 @) **e3** 

   - Weight: 0.112 grams (Approximate) 

- Uninterrupted Power Supply 

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  SOT223<br>**----- End of picture text -----**<br>


Top View 

Pin Out - Top View 

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D<br>G<br>S<br>Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Qualification**|**Case**|**Packaging**|
|---|---|---|---|
|DMP45H21DHE-13|Standard|SOT223|2,500 / Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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YWW<br>P450HE<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking P450HE = Marking Code YWW = Date Code Marking Y or Y= Year (ex: 7 = 2017) WW = Week (01 to 53) 

1 of 7 **www.diodes.com** 

DMP45H21DHE Document Number DS38632  Rev. 3 - 2 

September 2017 © Diodes Incorporated 

**DMP45H21DHE** 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-450|V|
|Gate-Source Voltage||VGSS|±30|V|
|Continuous Drain Current (Note 6) VGS= 10V|TC= +25°C|ID|-0.6|A|
||TC= +70°C|ID|-0.4|A|
|Pulsed Drain Current (10µs pulse, duty cycle = 1%)(Note5)||IDM|-1.2|A|
|Maximum Body Diode Continuous Current (Note5)||IS|-0.9|A|
|Avalanche Energy (Note 8)  L=60mH||EAS|30|mJ|
|Avalanche Current (Note 8) L=60mH||IAS|-1|A|
|Peak Diode Recoverydv/dt(ISD ≤1.0A, di/dt≤100A/μs)||dv/dt|26|V/ns|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 6)|TC = +25°C|PD|12.5|W|
||TC = +70°C||8||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|108|°C/W|
|Thermal Resistance,Junction to Case|(Note 6)|RθJC|10|°C/W|
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

||||||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~——————~~|**Symbol**<br>~~——————~~|**Min**<br>~~——————~~|**Typ**<br>~~——————~~|**Max**<br>~~——————~~|**Unit**<br>~~——————~~|**Test Condition**<br>~~——————~~|
|**OFF CHARACTERISTICS(Note 6)**<br>~~——————~~|||||||
|Drain-Source Breakdown Voltage<br>~~——————~~|BVDSS<br>~~——————~~|-450<br>~~——————~~|<br>~~——————~~|<br>~~——————~~|V<br>~~——————~~|VGS= 0V,ID= -250µA<br>~~——————~~|
|Zero Gate Voltage Drain Current<br>~~——————~~<br>~~a~~|IDSS<br>~~——————~~<br>~~I~~|<br>~~——————~~<br>~~I~~|<br>~~——————~~<br>~~G(R~~|-1<br>~~——————~~<br>~~G(R~~|µA<br>~~——————~~<br>~~QO~~|VDS= -450V,VGS= 0V<br>~~——————~~<br>~~OO~~|
|Gate-Source Leakage<br>~~a~~|IGSS<br>~~I~~|<br>~~I~~|<br>~~G(R~~|±100<br>~~G(R~~|nA<br>~~QO~~|VGS= ±30V,VDS= 0V<br>~~OO~~|
|**ON CHARACTERISTICS(Note 6)**<br>~~a~~<br>~~I G(R~~<br>~~QO OO~~<br>~~ff~~<br>~~————~~|||||||
|Gate Threshold Voltage<br>~~Ce~~<br>~~————~~|VGS(TH)<br>~~Ce~~<br>~~ff~~|-3.0<br>~~Ce~~<br>~~ff~~|-4<br>~~Ce~~<br>~~ff~~|-5.0<br>~~Ce~~|V<br>~~Ce~~|VDS= VGS,ID= -250µA<br>~~Ce~~|
|Static Drain-Source On-Resistance<br>~~————~~|RDS(ON)<br>~~ff~~|<br>~~ff~~|13<br>~~ff~~|21|Ω|VGS= -10V,ID= -0.3A|
|Diode Forward Voltage<br>~~————~~|VSD<br>~~ff~~|<br>~~ff~~|-0.84<br>~~ff~~|-1.2|V|VGS= 0V,IS= -1A|
|**DYNAMIC CHARACTERISTICS(Note 7)**<br>~~ff~~<br>~~————~~<br>~~eeeeOe~~<br>~~ne~~|||||||
|Input Capacitance<br>~~ee~~|Ciss<br>~~ee~~|<br>~~ee~~|1,003<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|pF<br>~~ee~~<br>~~Oe~~|VDS= -25V, VGS= 0V, f = 1.0MHz<br>~~ee~~<br>~~ne~~|
|Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|25.5<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|2.3<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|||
|Gate Resistance|RG<br>~~a~~||615<br>~~ee ~~|<br> ~~ee ~~|Ω<br> ~~Oe~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ne~~|
|Total Gate Charge|Qg<br>~~a~~||4.2||nC<br>~~a~~<br>|VDS= -225V, ID= -1A, VGS= -10V<br>~~ee~~<br>|
|Gate-Source Charge<br>~~————~~|Qgs<br>~~————~~<br>~~a~~|<br>~~————~~|1.1<br>~~————~~|<br>~~————~~|||
|Gate-Drain Charge<br>~~————~~<br>~~F~~|Qgd<br>~~————~~<br>~~a~~<br>|<br>~~————~~<br>|2.1<br>~~————~~<br>~~a~~<br>|<br>~~————~~<br>~~a~~<br>|||
|Turn-On DelayTime<br>~~————~~<br>~~———~~<br>~~F~~|tD(ON)<br>~~————~~<br>~~a~~<br>~~———~~<br>|<br>~~————~~<br>~~———~~<br>|17<br>~~————~~<br>~~———~~<br>~~a~~<br>|<br>~~————~~<br>~~———~~<br>~~a~~<br>|ns<br>~~———~~<br>~~a~~<br>|VDD= -225V, RG= 3.0Ω, ID= -1A<br>~~———~~<br>~~ee~~<br>|
|Turn-On Rise Time<br>~~———~~<br>~~F~~|tR<br>~~a~~<br>~~———~~<br>|<br>~~———~~<br>|22<br>~~———~~<br>~~a~~<br>|<br>~~———~~<br>~~a~~<br>|||
|Turn-Off DelayTime<br>~~———~~<br>~~F~~|tD(OFF)<br>~~———~~<br>|<br>~~———~~<br>|18<br>~~———~~<br>~~a~~<br>|<br>~~———~~<br>~~a~~<br>|||
|Turn-Off Fall Time<br>~~———~~<br>~~F~~|tF<br>~~———~~<br>|<br>~~———~~<br>|21<br>~~———~~<br>~~a~~<br>|<br>~~———~~<br>~~a~~<br>|||
|Body Diode Reverse Recovery Time<br>~~Frrrrr—sss—sSSS~~|tRR<br>~~rrrrr—sss—sSSS~~|<br>~~rrrrr—sss—sSSS~~|113<br>~~a~~<br>~~rrrrr—sss—sSSS~~|<br>~~a~~<br>~~rrrrr—sss—sSSS~~|ns<br>~~a~~<br>~~rrrrr—sss—sSSS~~|VGS= 0V, VDD= -200V, IS= -1A,<br>di/dt= 100A/μs<br>~~ee~~<br>~~rrrrr—sss—sSSS~~|
|Body Diode Reverse Recovery Charge<br>~~F~~<br>~~OO~~|QRR<br><br>~~OO~~|<br><br>~~OO~~|540<br>~~a~~<br><br>~~OO~~|<br>~~a~~<br><br>~~OO~~|nC<br>~~a ~~<br><br>~~OO~~|VGS= 0V, VDD= -200V, IS= -1A,<br>di/dt = 100A/μs<br> ~~ee~~<br><br>~~OO~~|



6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 

- 7 .Short duration pulse test used to minimize self-heating effect. 

8. Guaranteed by design. Not subject to production testing. 

2 of 7 **www.diodes.com** 

DMP45H21DHE Document Number DS38632  Rev. 3 - 2 

September 2017 © Diodes Incorporated 

**DMP45H21DHE** 

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1.0   0.6<br> VGS = 8.0V  VDS = -20V<br>0.8   K  VGS = 10.0V  S 0.5<br> VGS = 7.0V  0.4<br>0.6   OT<br>0.3<br>125 ℃<br>0.4   O f<br>85 ℃<br>0.2<br> VGS = 6.0V<br>25 ℃<br>0.2   P/ E 0.1  Seeee Se<br>L—— ——  VGS = 5.5V  | Y 150 ℃ -55 ℃<br> VGS = 5.0V<br>0.0   AD 0<br>0  2  4  6  8  10  12  14  16  18  20  0  1  2  3  4  5  6  7  8<br>VDS, DRAIN-SOURCE VOLTAGE (V)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 1. Typical Output Characteristic  Figure 2. Typical Transfer Characteristic<br>20  40<br>18  CT<br>35<br>16  COT<br>14   VGS = -10V  30<br>SEaggeP=a0<br>12  Co e<br>25<br>eT<br>10  SSRGREnEn<br>20<br>8  CO ID = -1A<br>6  COO 15<br>0  0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  1  0  5  10  15  20  25  30<br>ID, DRAIN-SOURCE CURRENT (A)  VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 3. Typical On-Resistance vs. Drain Current and<br>Figure 4. Typical Transfer Characteristic<br>Gate Voltage<br>35  3<br>VGS = -10V<br>30  e e 2.5<br>150 ℃<br>25<br>2<br>e 125 ℃ ee<br>20<br>1.5<br>85 ℃<br>15  p o] er<br>1<br>10  25 ℃ ee eee<br>0.5   VGS = -10V, ID = -1A<br>5<br>— -55 ℃ ——— 4<br>cE<br>0  0<br>0  es 0.2  0.4  0.6  0.8  -50  a -25  0  25  50  75  100  125  150<br>ID, DRAIN CURRENT (A)  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 6. On-Resistance Variation with Temperature<br>Figure 5. Typical On-Resistance vs. Drain Current and<br>Temperature<br>, DRAIN CURRENT (A)  , DRAIN CURRENT (A)<br>ID ID<br>)<br><br>)<br>(<br>, DRAIN-SOURCE ON-RESISTANCE<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>DS(ON)<br>R<br>)<br>(<br>(NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE<br>,  DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>DS(ON) R<br>R<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DMP45H21DHE Document Number DS38632  Rev. 3 - 2 

September 2017 © Diodes Incorporated 

**DMP45H21DHE** 

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35  6<br>TELL<br>30<br>5<br>25  ID = -1mA<br>anne 4  ee<br>20<br>COTE SS ID = -250μA<br>15   VGS = -10V, ID = -1A  3<br>10<br>2<br>5  eatp eer+t | L{TELE ET S<br>0  EEE 1  PELL EEL<br>-50  -25  0  25  50  75  100  125  150  -50  -25  0  25  50  75  100  125  150<br>TJ, JUNCTION TEMPERATURE ( ℃ )  TJ, JUNCTION TEMPERATURE ( ℃ )<br>Figure 7. On-Resistance Variation with Temperature  Figure 8. Gate Threshold Variation vs.<br>AmbientTemperature<br>1  10000<br>150 ℃<br>VGS = 0V<br>1000<br>0.8<br>125 ℃<br>EE<br>100<br>0.6  e e<br>85 ℃<br>| ee == ===———<br>10<br>0.4<br>TA = 85 [o] C  1  25 ℃<br>TA = 125 [o] C<br>0.2  TA = 25 [o] C<br>A TA = 150 [o] C  0.1<br>TA = -55 [o] C<br>Wr<br>0<br>| 0.01  ===<br>0  0.3  0.6  0.9  1.2  1.5<br>0  50  100 150 200 250 300 350 400 450<br>VSD, SOURCE-DRAIN VOLTAGE (V)  VDS, Drain-SOURCE VOLTAGE (V)<br>Figure 9.  Diode Forward Voltage vs. Current<br>Figure 10. Typical Drain-Source Leakge Current vs. Voltage<br>10000<br>10<br>f=1MHz<br>_—======= /<br>Ciss<br>8<br>1000<br>Se e 6  THUY<br>100<br>Coss  4<br>NeSSsess 17<br>10   2  VDS = -225V, ID = -1A<br>SS Crss<br>1   Aae 0  Avy) tte[|<br>0  5  10  15  20  25  30  35  40  0  0.5  1  1.5  2  2.5  3  3.5  4  4.5<br>VDS, DRAIN-SOURCE VOLTAGE (V)  Qg - (nC)<br>Figure11. Typical Junction Capacitance  Figure 12.  Gate Charge<br>)<br> , GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE ON-ESISTANCE (<br>GS(TH)<br>V<br>DS(ON)<br>R<br>, LEAKAGE CURRENT (nA)<br>Is, SOURCE CURRENT (A)  IDSS<br> (pF)<br>Vgs (V)<br>, Junction Capacitance<br>T<br>C<br>**----- End of picture text -----**<br>


4 of 7 **www.diodes.com** 

DMP45H21DHE Document Number DS38632  Rev. 3 - 2 

September 2017 © Diodes Incorporated 

**DMP45H21DHE** 

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10<br>a RDS(ON) Limited  ee PW =100µs  TTT<br>a eeeee eee<br>1  ee ll<br>poa eae.Ae<br>Pot ae SRGS Se SeON I nnan<br>0.1  PNA ON<br>PW =1ms<br>aa SANTINO<br>PW =10ms<br>0.01  TJ(Max) = 150 ℃   PW =100ms  xAZSAN!AN Inanii<br>TSingle Pulse C = 25 ℃ PW =1s<br>DUT on 1*MRP Board  PW SSENTT<br>VGS= -10V  DC<br>Ban HLT<br>0.001<br>1  10  100  1000<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 13. SOA, Safe Operation Area<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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1<br>SSS SSS SSS an<br>Se D=0.7  i<br>D=0.5<br>= e<br>D=0.3<br>D=0.9<br>0.1  Sna eTntiiecceeeB piesaooo —=aa3 A nT e T<br>EE D=0.1  ee<br>D=0.05<br>amg ane A<br>C A FE<br>LY TE EEE<br>D=0.02<br>0.01  er— e D=0.01  AINEQa OOTIEOO COERIEGO OSRTI ETIGGELT<br>R Z<br>PAAi A D=0.005  SeePTTe<br>D=Single Pulse  RθJA(t) = r(t) * RθJA<br>Fam CENCE RθJA = 108 ℃ /W  mall<br>Duty Cycle, D = t1 / t2<br>0.001<br>0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, Pulse Duration Time (sec)<br>Figure 14.  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP45H21DHE Document Number DS38632  Rev. 3 - 2 

September 2017 © Diodes Incorporated 

**DMP45H21DHE** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT223** 

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D<br>b1 Q<br>C<br>SOT223<br>Spe ee Dim  Min  Max  Typ<br>A 1.55 1.65 1.60<br>A1 0.010 0.15  0.05<br>fo E E1 Se b 0.60  0.80  0.70<br>b1 2.90  3.10  3.00<br>Gauge<br>Plane C 0.20  0.30  0.25<br>G 0.25 o === D 6.45  6.55  6.50<br>Seating L E 3.45  3.55  3.50<br>Plane<br>E1 6.90  7.10  7.00<br>- e1 b e -  -  4.60<br>ail e ve e1 -  -  2.30<br>L 0.85 1.05 0.95<br>Q 0.84  0.94  0.89<br>A A1 7° All Dimensions in mm<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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X1<br>Y1<br>=a<br>C1 Y2<br>Y<br>a X gg C<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C 2.30<br>C1  6.40<br>X  1.20<br>X1  3.30<br>Y  1.60<br>Y1  1.60<br>Y2  8.00<br>==<br>**----- End of picture text -----**<br>


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DMP45H21DHE Document Number DS38632  Rev. 3 - 2 

September 2017 © Diodes Incorporated 

**DMP45H21DHE** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

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## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

7 of 7 **www.diodes.com** 

DMP45H21DHE Document Number DS38632  Rev. 3 - 2 

September 2017 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP45H21DHE-13/power-mosfet-p-channel-450-v-600-ma-13-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp45h21dhe-13/mosfet-p-ch-450v-0-6a-sot-223/dp/3943806RL)
---

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