# Power MOSFET, P Channel, 40 V, 4.4 A, 0.038 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943804/)

**URL**: https://novapart.co/products/DMP4050SSS-13/power-mosfet-p-channel-40-v-44-a-0038-ohm-soic
**SKU**: DMP4050SSS-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2310
**Stock**: 200+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.56W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.4A |
| Drain Source On State Resistance | 0.038ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943804/)

**40V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **A Product Line of Diodes Incorporated DMP4050SSS** ~~—~~ 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(on)**|**ID**<br>**TA = 25**°**C**|
|-40V|50mΩ@ VGS= -10V|-6.0A|
||79mΩ@ VGS= -4.5V|-4.7A|



## **Features and Benefits** 

- Low on-resistance 

- Fast switching speed 

- **“Green” component and RoHS compliant (Note 1)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Mechanical Data** 

## **Description and Applications** 

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

- Motor control 

- Backlighting 

- DC-DC Converters 

   - Case: SO-8 

   - Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0 (Note 1) 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

   - Terminals Connections: See diagram below 

   - Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.074 grams (approximate) 

- Power management functions 

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SO-8<br>Top View<br>**----- End of picture text -----**<br>


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D<br>G<br>S<br>Top View Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 1) 

|**Ordering Informationg Information Information** (Note 1)|**Ordering Informationg Information Information** (Note 1)|**Ordering Informationg Information Information** (Note 1)|**Ordering Informationg Information Information** (Note 1)|**Ordering Informationg Information Information** (Note 1)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|DMP4050SSS-13|P4050SS|13|12|2,500|



Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website.  For packaging details, go to our website. 

## **Marking Information** 

= Manufacturer’s Marking P4050SS = Product Type Marking Code **P4050SS** YYWW = Date Code Marking **YY WW** YY = Year (ex: 09 = 2009) WW = Week (01-53) 

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DMP4050SSS Document Number DS32108 Rev 1 - 2 

March 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** 

**DMP4050SSS** 

## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol **|**Value**|**Unit**|
|Drain-Source voltage|||VDSS|-40|V|
|Gate-Source voltage||(Note 2)|VGS|±20|V|
|Continuous Drain current|VGS= 10V|(Note 4)|ID|-6.0|A|
|||TA= 70°C(Note 4)||-4.8||
|||(Note 3)||-4.4||
|Pulsed Drain current|VGS= 10V|(Note 5)|IDM|-27.0|A|
|Continuous Source current(Bodydiode)||(Note 4)|IS|-4.0|A|
|Pulsed Source current(Bodydiode)||(Note 5)|ISM|-27.0|A|



**Thermal Characteristics** @TA = 25°C unless otherwise specified 

|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Thermal Characteristics **@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|||
|---|---|---|---|---|
|**Characteristic**||**Symbol **|**Value**|**Unit**|
|Power dissipation<br>Linear derating factor|(Note 3)|PD|1.56<br>12.5|W<br>mW/°C|
||(Note 4)||2.8<br>22.5||
|Thermal Resistance, Junction to Ambient|(Note 3)|RθJA|80|°C/W|
||(Note4)||44.5||
|Thermal Resistance,Junction to Lead|(Note 6)|RθJL|35||
|Operatingand storage temperature range||TJ,TSTG|-55 to 150|°C|



Notes: 2. AEC-Q101 VGS maximum is ±16V. 

3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

4. Same as note (3), except the device is measured at t ≤ 10 sec. 

5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs.  The pulse current is limited by the maximum junction temperature. 

6. Thermal resistance from junction to solder-point (at the end of the drain lead). 

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DMP4050SSS Document Number DS32108 Rev 1 - 2 

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**A Product Line of Diodes Incorporated** 

**DMP4050SSS** 

## **Thermal Characteristics** 

**==> picture [444 x 355] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6<br>R  Limited<br>10 SS. DS(on) EE —_———_———=_ —=—! 1.4 ny N | ee 25mm x 25mm<br>| SS > 1.2 1oz FR4<br>1 aeee cl) 1.0 HtPyNEPAR EE EH HHH 4<br>DC<br>100m 1s 0.8<br>10m =aosmas 100ms10ms FAP a 0.6 a<br>0.4<br>Single Pulse ——— 1ms \<br>1m T amb =25°C | 100µs a 0.2 \<br>———————————— 0.0 Pt tT tttNTT<br>100m 1 10 0 20 40 60 80 100 120 140 160<br>-VDS  Drain-Source Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>80 To oo oo SERRE<br>aul T amb =25°C CnC TTT FP NQMC CHIH Single Pulse ill<br>70<br>0 ray A 100 CURT Tamb=25°C il<br>60<br>50 CCMA‘i / A eereteEee eeePPeee ee<br>D=0.5<br>Pe ‘At A<br>40<br>(ff<br>30 repeatTT TT TT API | Tt 10 NEHOHE PN EE<br>D=0.2 Single Pulse<br>20<br>=e D=0.05 CA Ce TnI PT<br>10 aTLL oteT D=0.1 a ieee AA A<br>0 Seniesa =" 1 PUTTIN CITI CAME ETI LTT ni<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>Transient Thermal Impedance Pulse Power Dissipation<br>  Drain Current (A)<br>D<br>-I<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


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DMP4050SSS Document Number DS32108 Rev 1 - 2 

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**A Product Line of Diodes Incorporated** 

## **DMP4050SSS** [ 

## **Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics**@TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**||
|**OFFCHARACTERISTICS**||||||||
|Drain-Source Breakdown Voltage|BVDSS|-40|⎯|⎯|V|ID= -250μA,VGS= 0V||
|Zero Gate Voltage Drain Current|IDSS|⎯|⎯|-0.5|μA|VDS= -40V,VGS= 0V||
|Gate-Source Leakage|IGSS|⎯|⎯|±100|nA|VGS=±20V,VDS= 0V||
|**ON CHARACTERISTICS**||||||||
|Gate Threshold Voltage<br>~~Ee~~|VGS(th)<br>~~Ee~~|-1.0<br>~~Ee~~|⎯<br>~~Ee~~|-3.0<br>~~Ee~~|V<br>~~Ee~~|ID= -250μA,VDS= VGS<br>~~Ee~~||
|Static Drain-Source On-Resistance (Note 7)<br>~~Ee~~|RDS (ON)<br>~~Ee~~|⎯<br>~~Ee~~|0.038<br>~~Ee~~|0.050<br>~~Ee~~|Ω<br>~~Ee~~|VGS= -10V,ID= -6A<br>~~Ee~~||
||||0.055<br>~~Ee~~|0.079<br>~~Ee~~||VGS= -4.5V,ID= -5A<br>~~Ee~~||
|Forward Transconductance(Notes 7 & 8)<br>~~Ee~~|gfs<br>~~Ee~~|⎯<br>~~Ee~~|14<br>~~Ee~~|⎯<br>~~Ee~~|S<br>~~Ee~~|VDS= -15V,ID= -6A<br>~~Ee~~||
|Diode Forward Voltage(Note 7)<br>~~ee~~|VSD<br>~~ee~~|⎯<br>~~ee~~|-0.86<br>~~ee~~|-1.2<br>~~ee~~|V<br>~~ee~~|IS= -6A,VGS= 0V<br>~~ee~~||
|Reverse recoverytime(Note 8)<br>~~ee~~|trr<br>~~ee~~|~~ee~~|18.5<br>~~ee~~|⎯<br>~~ee~~|ns<br>~~ee~~|IS= -2.5, di/dt= 100A/μs<br>~~ee~~||
|Reverse recoverycharge(Note 8)<br>~~ee~~|Qrr<br>~~ee~~|⎯<br>~~ee~~|15.6<br>~~ee~~|⎯<br>~~ee~~|nC<br>~~ee~~|||
|**DYNAMIC CHARACTERISTICS (Note 8)**||||||||
|Input Capacitance<br>~~See~~|Ciss<br>~~See~~|⎯<br>~~See~~|674<br>~~See~~|⎯<br>~~See~~|pF<br>~~See~~|VDS= -20V, VGS= 0V<br>f= 1MHz<br>~~See~~<br>~~eee~~||
|Output Capacitance<br>~~See~~|Coss<br>~~See~~|⎯<br>~~See~~|115<br>~~See~~|⎯<br>~~See~~|pF<br>~~See~~|||
|Reverse Transfer Capacitance<br>~~See~~<br>~~———~~|Crss<br>~~See~~|⎯<br>~~See~~|67.7<br>~~See~~<br>~~ee~~|⎯<br>~~See~~<br>~~ee~~|pF<br>~~See~~<br>~~ee~~|||
|Total Gate Charge(Note 9)<br>~~See~~<br>~~———~~|Qg<br>~~See~~|⎯<br>~~See~~|6.9<br>~~See~~<br>~~ee~~|⎯<br>~~See~~<br>~~ee~~|nC<br>~~See~~<br>~~ee~~|VGS= -4.5V<br>~~See~~<br>~~eee~~|VDS= -20V<br>ID= -6A<br>~~See~~<br>~~e~~<br>~~ee~~|
|Total Gate Charge(Note 9)<br>~~———~~|Qg|⎯|13.9<br>~~ee~~|⎯<br>~~ee~~|nC<br>~~ee~~|VGS= -10V<br>~~eee~~<br>~~ee~~||
|Gate-Source Charge(Note 9)<br>~~———~~|Qgs|⎯|2<br>~~ee~~|⎯<br>~~ee~~|nC<br>~~ee~~|||
|Gate-Drain Charge(Note 9)<br>~~———~~|Qgd|⎯<br>~~=~~|3.4<br>~~ee~~<br>~~=~~|⎯<br>~~ee~~<br>~~=~~|nC<br>~~ee~~|||
|Turn-On DelayTime(Note 9)<br>~~———~~<br>~~—<———_—~~|tD(on)<br>~~—<———_—~~|⎯<br>~~—<———_—~~<br>~~=~~|1.9<br>~~ee~~<br>~~—<———_—~~<br>~~=~~|⎯<br>~~ee~~<br>~~—<———_—~~<br>~~=~~|ns<br>~~ee~~<br>~~—<———_—~~|VDD= -20V, VGS= -10V<br>ID= -1A, RG≅6.0Ω<br>~~eee~~<br>~~—<———_—~~<br>~~ee~~||
|Turn-On Rise Time(Note 9)<br>~~———~~<br>~~—<———_—~~|tr<br>~~—<———_—~~|⎯<br>~~—<———_—~~<br>~~=~~|3.1<br>~~ee~~<br>~~—<———_—~~<br>~~=~~|⎯<br>~~ee~~<br>~~—<———_—~~<br>~~=~~|ns<br>~~ee~~<br>~~—<———_—~~|||
|Turn-Off DelayTime(Note 9)<br>~~—<———_—~~|tD(off)<br>~~—<———_—~~|⎯<br>~~—<———_—~~<br>~~=~~|31.5<br>~~—<———_—~~<br>~~=~~|⎯<br>~~—<———_—~~<br>~~=~~|ns<br>~~—<———_—~~|||
|Turn-Off Fall Time(Note 9)<br>~~—<———_—~~|tf<br>~~—<———_—~~|⎯<br>~~—<———_—~~<br>~~=~~|12.6<br>~~—<———_—~~<br>~~=~~|⎯<br>~~—<———_—~~<br>~~=~~|ns<br>~~—<———_—~~|||



8.   For design aid only, not subject to production testing. 

9.   Switching characteristics are independent of operating junction temperatures. 

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DMP4050SSS Document Number DS32108 Rev 1 - 2 

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**DMP4050SSS** 

## **Typical Characteristics** 

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T = 25°C 10V 4V T = 150°C 10V 4V 3.5V<br>10 3.5V 10<br>3V 3V<br>2.5V<br>1 Ao ee 1 | Ba ee<br>2.5V<br>le eee eaced eee eee etee<br>2V<br>0.1 eeTe eee 0.1 itsPT | PUT | Te<br>-VGS -VGS<br>0.01 raeaAT 0.01 er0TAT |<br>0.1 1 10 0.1 1 10<br>-VDS  Drain-Source Voltage (V) -VDS  Drain-Source Voltage (V)<br>Output Characteristics Output Characteristics<br>10 a<br>-V DS  = 10V 1.6 V  = -10V<br>GS<br>aeeeee ee ee ee 2 aAneae eee 1.4 ID = -12A , R DS(on)<br>1.2<br>1<br>T = 150°C<br>1.0<br>T = 25°C<br>V<br>|ff P< GS(th)<br>ee Ae A | 0.8 —_ V  = V =<br>GS DS<br>I  = -250uA<br>D<br>0.1 TYEE 0.6 ee ><br>1.5 2.0 2.5 3.0 3.5 -50 0 50 100 150<br>-VGS  Gate-Source Voltage (V) Tj  Junction Temperature (°C)<br>Typical Transfer Characteristics Normalised Curves v Temperature<br>SSS -V GS a 2.5V T = 25°C 1 0 SS<br>ee eee ee<br>3V<br>eer alll cy SS SS SS SSSSS<br>T = 150°C<br>1 eT TN | ti | 1 Of<br>3.5V<br>T = 25°C<br>A 0. 1 Flif.[ f/f...<br>4V<br>0.1 eT | =<br>_—— te 4.5V a ey A A<br>rn 10V 0.0 1 eee) eee<br>a ee ee ee eee<br>Po ee a ee a es<br>0.01 TUM LTT ELT EL 1E- 3 PFrT OS<br>0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2<br>-ID  Drain Current (A) -VSD  Source-Drain Voltage (V)<br>On-Resistance v Drain Current Source-Drain Diode Forward Voltage<br>  Drain Current (A)   Drain Current (A)<br>D D<br>-I -I<br>GS(th)<br> and V<br>DS(on)<br>  Drain Current (A)<br>D<br>-I Normalised R<br>(Ω)<br>  Reverse Drain Current (A)<br>SD<br> Drain-Source On-Resistance  -I<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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DMP4050SSS Document Number DS32108 Rev 1 - 2 

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**A Product Line of Diodes Incorporated** 

**DMP4050SSS** 

## **Typical Characteristics - continued** 

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1000 10<br>V  = 0V<br>PT ETT GS PTE tT ELE ELE ELLE LLY<br>800 ee Sl f = 1MHz 8 Fi tt tT tT dt | TT | TT<br>a) ae Pt tee ET EAE<br>C<br>600 Pin. ISS 6 rt tt tte te L _ AL<br>C<br>Pe OSS I<br>400 ue tee] C RSS 4 Pt tT teeYLT<br>Poee5 Oe PT Tt _E LLY EEL<br>V  = -20V<br>200 Poe OPSZa 2 PTrIATLIELTTT TYE| ITTT DS ET<br>I  = -6A<br>D<br>te Vanna<br>0 || LTE Ee oe SS 0 AEE<br>0.1 1 10 0 2 4 6 8 10 12 14<br>-VDS - Drain - Source Voltage (V) Q - Charge (nC)<br>C  Capacitance (pF)   Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


**Capacitance v Drain-Source Voltage** 

**Gate-Source Voltage v Gate Charge** 

## **Test Circuits** 

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Current<br>regulator<br>QG<br>12V  0.2 F  50k  Same as<br>D.U.T<br>—_______+ | 2<br>VG  QGS  QGD<br>| | ‘ LI — +—~ ss!<br>VDS<br>| * ® IG  |<br>D.U.T<br>| | ID<br>VGS<br>Charge<br>Basic gate charge waveform  Gate charge test circuit<br>f—N 90% VDS  RD<br>VGS  VDS<br>RG  VDD<br>\/ / | 10%<br>VGS  Pulse width   1 S<br>Duty factor 0.1%<br>tr  td(off)  tr  td(on)<br>t(on)  t(on)<br>**----- End of picture text -----**<br>


**Switching time waveforms** 

**Switching time test circuit** 

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DMP4050SSS Document Number DS32108 Rev 1 - 2 

March 2010 © Diodes Incorporated 

**A Product Line of Diodes Incorporated** ~~|ZETEX~~ **DMP4050SSS** ~~Cd~~ 

## **Package Outline Dimensions** 

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|**DIM**||**Inches**|||||||||**Millimeters**|||||||||**DIM**||**Inches**||||||**Millimeters**||
||**Min.**||||**Max.**|||||**Min.**|||**Min.**||**Max.**||||||**Min.**|||**Max.**||||**Min.**|**Max.**|
|A<br>~~a~~|0.053||0.053||0.069|||||1.35|||1.35||1.75|||||e||0.050 BSC|||||0.050 BSC|1.27 BSC|1.27 BSC|
|A1<br>~~a~~|0.004||0.004||0.010|||||0.10|||0.10||0.25|||||b|0.013||0.013|0.020||||0.33|0.51|
|D<br>~~a~~|0.189||0.189||0.197|||||4.80|||4.80||5.00|||||c|0.008||0.008|0.010||||0.19|0.25|
|H<br>~~a~~|0.228||0.228||0.244|||||5.80|||5.80||6.20|||||θ||0°||||8°|8°|0°|8°|
|E<br>0.150<br>0.157<br>3.80<br>4.00<br>h<br>0.010<br>0.020<br>0.25<br>0.50<br>~~aee~~||||||||||||||||||||||||||||||
|L<br>0.016<br>~~ee~~|||||0.050|||||0.40|||0.40||1.27|||||-||-||||-||-|-|



## **Suggested Pad Layout** 

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1.52<br>0.060<br>(0000 ;<br>7.0 4.0<br>0.275 0.155<br>0.6 1.27<br>0.024 ny 0.050<br>mm<br>inches<br>**----- End of picture text -----**<br>


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**DMP4050SSS** 

## **IMPORTANT NOTICE** 

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Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A. Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2010, Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMP4050SSS Document Number DS32108 Rev 1 - 2 

March 2010 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP4050SSS-13/power-mosfet-p-channel-40-v-44-a-0038-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp4050sss-13/mosfet-p-ch-40v-4-4a-soic/dp/3943804)
---

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