# Power MOSFET, P Channel, 40 V, 7.2 A, 0.018 ohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3943802RL/)

**URL**: https://novapart.co/products/DMP4025SFGQ-13/power-mosfet-p-channel-40-v-72-a-0018-ohm-powerdi
**SKU**: DMP4025SFGQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1850
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 810mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7.2A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 1.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943802RL/)

## **DMP4025SFGQ** [| **40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**BVDSS**|**RDS(ON)Max**|**ID Max**<br>**TA = +25°C**|
|-40V|25mΩ@VGS= -10V|- 7.2A|
||45mΩ@VGS = -4.5V|- 5.4A|



## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

- Motor Control 

- Backlighting 

- DC-DC Converters 

- Printer Equipment 

## **Features and Benefits** 

- Low RDS(ON) – Minimizes Conduction Losses 

- Fast Switching Speed – Minimizes Switching Losses 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **The DMP4025SFGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Package: PowerDI[®] 3333-8 

- Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See Diagram Below 

- Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 

- Weight: 0.0172 grams (Approximate) 

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PowerDI3333-8<br>**----- End of picture text -----**<br>


Top View 

Bottom View 

Device Symbol 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|
|||||
|**Part Number**|**Package**|**Packing**||
|||**Qty. **|**Carrier**|
|DMP4025SFGQ-7|PowerDI3333-8|2,000|Reel|
|DMP4025SFGQ-13|PowerDI3333-8|3,000|Reel|



- Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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DMP4025SFGQ Document Number: DS36897 Rev: 4 - 2 

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**DMP4025SFGQ** 

## **Marking Information** 

Site 1 

P40 = Product Marking Code YYWW = Date Code Marking YY = Year (ex: 21 = 2021) WW = Week (01 to 53) **P40** 

Site 2 

P40 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 1 = 2021) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) 

Date Code Key **Year 2014 … 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030** ~~es~~ **Code** 4 … 1 ~~ee~~ 2 3 ~~ee~~ 4 ~~ee~~ 5 ~~ee~~ 6 ~~ee~~ 7 ~~ee~~ 8 ~~ee~~ 9 0 **Week 1-26 27-52 53 Code** A-Z a-z z ~~es~~ **Internal Code Sun Mon Tue Wed Thu Fri Sat Code** T U V W X Y Z ~~— ee ee ee ee~~ 

## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-40|V|
|Gate-Source Voltage||VGSS|20||
|Continuous Drain Current, VGS= -10V|(Note 6)|ID|-7.2|A|
||TA= +70°C(Note 6)||-5.77||
||(Note 5)||-4.65||
|Maximum BodyDiode Forward Current|(Note 6)|IS|-7.2||
|Pulsed Drain Current|(Note 7)|IDM|-80||
|Pulsed Source Current|(Note 7)|ISM|-80||



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear DeratingFactor|(Note 5)|PD|0.81|W|
||(Note 6)||1.95||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|155|°C/W|
||(Note 6)||64||
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   6. For a device surface mounted on 25mm x 25mm FR-4 PCB with 2oz copper, in still air conditions. 

   7. Same as note (6), except the device is pulsed with D= 0.02 and pulse width 300µs. 

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**DMP4025SFGQ** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
100 a<br>90<br>Single Pulse<br>80 R JA  = 136C/W<br>RJA(t) = r(t) * RJA<br>70 TJ - TA = P * RJA(t)<br>60<br>SAAT ETAT<br>50<br>40<br>3020 CEI\ EET ETE<br>10 aa<br>0 a Nutta<br>0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Figure 1 Single Pulse Maximum Power Dissipation<br>, PEAK TRANSIENT POIWER (W)<br>P<br>(PK)<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>**----- End of picture text -----**<br>


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1<br>D=0.5 D=0.9<br>BT TR ~ Maal<br>re D=0.3 Seee ee a D=0.7 T T i<br>0.1 E TNL ifCa c<br>E D=0.1 EAeg<br>g r ETT<br>D=0.05<br>ET I THIET ITT<br>Ne 7 Oe a<br>r e<br>0.01 icu D=0.01D=0.02 COATLITTemJe | LAIorLIE LEALUU LTELEEI EIPIEELE  ETILE ET T T<br>ESOPen =f)’AIL Aa emceeIITa | eG<br>D=0.005<br>S ATEIE ET RθJA(t) = r(t) * RθJA PUTTCT<br>Hl [AE]<br>RθJA= 64℃/W<br>D=Single Pulse Duty Cycle, D = t1 / t2<br>0.001<br>1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 2. Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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DMP4025SFGQ Document Number: DS36897 Rev: 4 - 2 

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**DMP4025SFGQ** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||||
|---|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**||
|**OFF CHARACTERISTICS**||||||||
|Drain-Source Breakdown Voltage|BVDSS|-40|||V|ID= -250µA,VGS= 0V||
|Zero Gate Voltage Drain Current|IDSS|||-1.0|µA|VDS= -40V,VGS= 0V||
|Gate-Source Leakage|IGSS|||100|nA|VGS=20V,VDS= 0V||
|**ON CHARACTERISTICS**||||||||
|Gate Threshold Voltage<br>~~ee~~|VGS(TH)<br>~~ee~~|-0.8<br>~~ee~~|-1.3<br>~~ee~~|-1.8<br>~~ee~~|V<br>~~ee~~|ID= -250μA,VDS= VGS<br>~~ee~~||
|Static Drain-Source On-Resistance (Note 8)<br>~~ee~~|RDS(ON)<br>~~ee~~|<br>~~ee~~|18<br>~~ee~~|25<br>~~ee~~|mΩ<br>~~ee~~|VGS= -10V,ID= -3A<br>~~ee~~||
||||30<br>~~ee~~|45<br>~~ee~~||VGS= -4.5V,ID= -3A<br>~~ee~~||
|Forward Transconductance(Notes 8 & 9)<br>~~ee~~|gfs<br>~~ee~~|<br>~~ee~~|16.6<br>~~ee~~|<br>~~ee~~|S<br>~~ee~~|VDS= -5V,ID= -3A<br>~~ee~~||
|Diode Forward Voltage(Note 8)|VSD||-0.7|-1.0|V|IS= -1A,VGS= 0V||
|**DYNAMIC CHARACTERISTICS(Note 9)**||||||||
|Input Capacitance<br>~~—~~|Ciss|<br>~~|~~|1643<br>~~|~~|<br>~~|~~|pF<br>~~|~~|VDS= -20V, VGS= 0V<br>f = 1MHz||
|Output Capacitance<br>~~—~~|Coss|<br>~~|~~|179<br>~~|~~|<br>~~|~~||||
|Reverse Transfer Capacitance<br>~~—~~|Crss|<br>~~|~~|128<br>~~|~~|<br>~~|~~||||
|Gate Resistance<br>~~—~~|Rg|<br>~~|~~|6.43<br>~~|~~|<br>~~|~~|Ω<br>~~|~~|VDS= 0V,VGS= 0V,f = 1MHz||
|Total Gate Charge(Note 10)<br>~~SS~~|Qg<br>~~SS~~|<br>~~SS~~|14.0<br>~~SS~~|<br>~~SS~~|nC<br>~~SS~~<br>~~ee~~|VGS= -4.5V<br>~~SS~~|VDS= -20V<br>ID= -3A<br>~~SS~~<br>~~ee~~|
|Total Gate Charge(Note 10)<br>~~SS~~|Qg<br>~~SS~~|<br>~~SS~~|33.7<br>~~SS~~|<br>~~SS~~||VGS= -10V<br>~~SS~~<br>~~ee~~||
|Gate-Source Charge(Note 10)<br>~~SS~~|Qgs<br>~~SS~~|<br>~~SS~~|5.5<br>~~SS~~|<br>~~SS~~||||
|Gate-Drain Charge(Note 10)<br>~~SS~~<br>~~———~~|Qgd<br>~~SS~~|<br>~~SS~~|7.3<br>~~SS~~|<br>~~SS~~<br>~~ee~~||||
|Turn-On DelayTime(Note 10)<br>~~SS~~<br>~~———~~|tD(ON)<br>~~SS~~|<br>~~SS~~|6.9<br>~~SS~~|<br>~~SS~~<br>~~ee~~|ns<br>~~SS~~<br>~~ee~~|VDD= -20V, VGS= -10V<br>ID= -3A<br>~~SS~~<br>~~ee~~||
|Turn-On Rise Time(Note 10)<br>~~———~~|tR||14.7|<br>~~ee~~||||
|Turn-Off DelayTime(Note 10)<br>~~———~~|tD(OFF)||53.7|<br>~~ee~~||||
|Turn-Off Fall Time(Note 10)<br>~~———~~|tF||30.9|<br>~~ee~~||||



Notes: 8. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%. 

9. For design aid only, not subject to production testing. 

10. Switching characteristics are independent of operating junction temperatures. 

## **Typical Characteristics** 

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30<br>30<br>25<br>25 V     = -5VDS T  = 150°CA<br>20 TRE [A)] (T 20 ge T  = 25°CT  = 85°CAA T  = 125°CA<br>[N] E<br>15 RRU T  = -55°CA<br>C 15<br>i= j<br>[IN] A<br>10 We= R<br>D<br>10<br>, D<br>- [I]<br>5 |<br>ay,<br>5<br>0<br>0 ————— 0.5 1 1.5 2 0  S<br>-VDS, DRAIN-SOURCE VOLTAGE (V) 0 1 2 3 4 5<br>Figure 3 Typical Output Characteristic -V    , GATE-SOURCE VOLTAGE (V)GS<br>Figure 4  Typical Transfer Characteristic<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>


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**DMP4025SFGQ** 

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0.05 ) 0.04<br>(<br>V     = -10VGS<br>N [CE]<br>0.04<br>T [A]<br>Pid dE I [S] S 0.03 e e e T  = 150°CA<br>0.03 Lee VGS = -4.5V a T  = 125°CA<br>O [N-RE]<br>T  = 85°CA<br>0.02<br>0.02 ToD O [URCE] _ T  = 25°CA<br>VGS = -10V I [N-S] T  = -55°CA<br>0.01<br>0.01 D [RA]<br>== , )<br>( [ON] S<br>D<br>0 PEL LEE R 0 P|a| | ft ff<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN-SOURCE CURRENT (A) -I  , DRAIN CURRENT (A)D<br>Figure 5 Typical On-Resistance  Figure 6 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.7 0.06<br>1.5 V GS = -10V 0.05<br>ID = -20A<br>1.3 ey 0.04 Ty LLL.<br>BERRER VGS = -4.5V 4 EEREEEES<br>ID = -10A<br>1.1 0.03 VGS = -4.5V<br>ID = -10A<br>0.9 BERR aen 0.02 a<br>Tle TT V h GS = -10V t<br>ID = -20A<br>0.7 ar | | 0.01 aT<br>0.5 TELL 0 TELL.|<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE  ( 癈°C ) TA, AMBIENT TEMPERATURE ((°C癈 )<br>Figure 7 On-Resistance Variation with Temperature Figure 8 On-Resistance Variation with Temperature<br>2.0 20<br>)<br>( [V] 18<br>G [E]<br>16<br>1.5 )<br>O [LTA] V N [T(A] 14 T   = 25°CA<br>12<br>H [OLD]<br>S 1.0 Th I   = -1mAD C [URRE] 10 ECEas e E E<br>T [HRE] ET E 8 SPA CE<br>T [E] I   = -250µAD O [URCE]<br>S 6<br>G [A] , 0.5 A] PS— — - [I,] S 4 GeeseSEER EE<br>G [S(TH)]<br>2<br>- [V]<br>0 yy EET y 0 SECCTOCEEEEEE E LEA<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>T  , AMBIENT TEMPERATURE (°C)A -V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 9 Gate Threshold Variation vs. Ambient Temperature Figure 10 Diode Forward Voltage vs. Current<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, GATE THRESHOLD VOLTAGE (V)  , OURCE CURRENT (A)<br>S<br>-I<br>GS(TH)<br>-V<br>**----- End of picture text -----**<br>


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**DMP4025SFGQ** 

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10,000 _ OC<br>[|<br>Po<br>———<br>pf |_| __}__<br>Ciss<br>a<br>1,000<br>——<br>Wo<br>ee C oss<br>100 Crss<br>_—|<br>ee GC COC<br>aa CO<br>i<br>10<br>| | tT | | lf<br>0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Typical Total Capacitance<br>10 /<br>8 V DS  = -20V /<br>ID = -12A 7<br>6 ff | y, Venn<br>/<br>4 —~<br>2<br>0 /E LEE<br>0 5 10 15 20 25 30 35 40<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 13 Gate-Charge Characteristics<br>C, CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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10,000 _—ee|<br>——— ————————<br>aa<br>[nA)] oo T   = 150°CA<br>T [(] 1,000 ooo—e “ee<br>[N] E ea a OG et es<br>R<br>RU SSS T   = 125°CA aff<br>C<br>100 |__ —_<br>T   = 85°CA<br>, [LEAKAGE] S F<br>D [S] 10<br>- [I] =<br>__ T   = 25°CA<br>1<br>Tl _<br>0 5 10 15 20 25 30 35 40<br>-V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 12 Typical Leakage Current<br>vs. Drain-Source Voltage<br>100<br>RDS(ON)  PW=10μs<br>LIMITED eT<br>2 en<br>STI NNT<br>10 potNRAZKR PW=100μs  NaONEattNNBRRSNS I N ZINNE NNRSRE<br>1 = PW=1ms  SONDOAKO NKNEBani<br>PPAyy. PW=10ms  PATERS/O N E<br>TJ(MAX)=150℃<br>0.1 TC=25℃ OA PW=100ms  MALANLT<br>Single PulseDUT on 1inch  i eee PW=1s DC ib<br>Copper Board<br>0.01 VGS=10V acoinCot<br>0.1 1 10 100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 14. SOA, Safe Operation Area<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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DMP4025SFGQ Document Number: DS36897 Rev: 4 - 2 

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**DMP4025SFGQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI3333-8<br>**----- End of picture text -----**<br>


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||||||||
|---|---|---|---|---|---|---|
|PowerDI3333-8|
|A1|A3|Dim|Min|Max|Typ|
|A|A|0.75|0.85|0.80|
|Seating Plane|A1|0.00|0.05|0.02|
|A3|||0.203|
|Teale}|b|0.27|0.37|0.32|
|b2|0.15|0.25|0.20|
|D|
|L(|4x)|D|3.25|3.35|3.30|
|D2|D2|2.22|2.32|2.27|
|1|E|3.25|3.35|3.30|
|E2|1.56|1.66|1.61|
|Pin #1 ID|E3|0.79|0.89|0.84|
|b2(|4x)|E 4|E4|1.60|1.70|1.65|
|e|||0.65|
|E|L|0.35|0.45|0.40|
|E 2|E 3|L1|||0.39|
|z|||0.515|
|All Dimensions in mm|
|L1(|3x)|
|8|
|z(|4x)|b|
|e|

**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI3333-8** 

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X3<br>X2<br>8<br>Y4<br>Y1 X1<br>Y2<br>Y3<br>nil<br>Y<br>1<br>X gon C<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C 0.650<br>X  0.420<br>X1  0.420<br>X2  0.230<br>X3 2.370<br>Y  0.700<br>Y1  1.850<br>Y2  2.250<br>Y3 3.700<br>Y4  0.540<br>**----- End of picture text -----**<br>


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DMP4025SFGQ Document Number: DS36897 Rev: 4 - 2 

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**DMP4025SFGQ** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

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6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMP4025SFGQ Document Number: DS36897 Rev: 4 - 2 

November 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP4025SFGQ-13/power-mosfet-p-channel-40-v-72-a-0018-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp4025sfgq-13/mosfet-p-ch-40v-7-2a-powerdi-3333/dp/3943802RL)
---

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