# Power MOSFET, P Channel, 40 V, 7.2 A, 0.018 ohm, PowerDI 3333, Surface Mount

![Product image](https://novapart.co/image/farnell:3943799RL/)

**URL**: https://novapart.co/products/DMP4025SFG-13/power-mosfet-p-channel-40-v-72-a-0018-ohm-powerdi
**SKU**: DMP4025SFG-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1680
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 810mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 3333 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7.2A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 1.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943799RL/)

**DMP4025SFG** fs 

## **40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**BVDSS**<br>**RDS(ON)Max**<br>**ID Max**<br>**TA = +25°C**<br>**(Note 6)**<br>-40V<br>25m @VGS= -10V<br>- 7.2A<br>45m @VGS = -4.5V<br>- 5.4A|||
|**BVDSS**|**RDS(ON)Max**|**ID Max**<br>**TA = +25°C**<br>**(Note 6)**|
|-40V|25m @VGS= -10V|- 7.2A|
||45m @VGS = -4.5V|- 5.4A|



## **Description** 

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Motor Control 

- Backlighting 

- DC-DC Converters 

- Printer Equipment 

## **Features** 

- Low RDS(ON) – Minimizes Conduction Losses 

- Fast Switching Speed – Minimizes Switching Losses 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **An Automotive-Compliant Part is Available Under Separate Datasheet (DMP4025SFGQ)** 

## **Mechanical Data** 

- Case: PowerDI[®] 3333-8 

- Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity:  Level 1 per J-STD-020 

- Terminals Connections: See Diagram Below 

- Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.0172 grams (Approximate) 

- 

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PowerDI3333-8<br>Top View<br>**----- End of picture text -----**<br>


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## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Part Number**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|DMP4025SFG-7|P40|7|8|2,000|
|DMP4025SFG-13|P40|13|8|3,000|



Notes:        1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

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P40<br>YYWW<br>**----- End of picture text -----**<br>


P40 = Product Marking Code YYWW = Date Code Marking YY = Year (ex: 18 = 2018) WW = Week (01 to 53) 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage||VDSS|-40|V|
|Gate-Source Voltage||VGSS|20||
|Continuous Drain Current, VGS= -10V|(Note 6)|ID|-7.2|A|
||TA= +70°C(Note 6)||-5.77||
||(Note 5)||-4.65||
|Maximum BodyDiode Forward Current|(Note 6)|IS|-7.2||
|Pulsed Drain Current|(Note 7)|IDM|-80||
|Pulsed Source Current|(Note 7)|ISM|-80||



**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation<br>Linear DeratingFactor|(Note 5)|PD|0.81|W|
||(Note 6)||1.95||
|Thermal Resistance, Junction to Ambient|(Note 5)|RθJA|155|°C/W|
||(Note 6)||64||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



- Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 

   6. For a device surface mounted on 25mm x 25mm FR-4 PCB with 2oz copper, in still air conditions. 

   7. Same as note (6), except the device is pulsed with D= 0.02 and pulse width 300µs. 

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**DMP4025SFG** | 

## **Thermal Characteristics** 

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100 TIT<br>90<br>TT TIT AT<br>Single Pulse<br>80 R JA  = 136C/W<br>70 R TJ   - T JA(t) A  = r  = P  (t)* * R  R  JA(t) JA<br>60<br>50<br>40<br>SUT AT<br>30<br>20 ATT<br>\ TTT AT<br>MNT TTT Th<br>10<br>0 A NLTa<br>0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Figure 1 Single Pulse Maximum Power Dissipation<br>1<br>SOTeterts eres HE TH<br>D=0.5  D=0.9<br>a ie ull . mall<br>P D=0.3  teTI TTI | err ae D=0.7  HiTATA<br>ST<br>0.1  ce |<br>E D=0.1  o rom LAU<br>Fv T a eCTtt<br>D=0.05<br>PT 0 L ATTA TT<br>7A<br>e e<br>0.01  ra eT D=0.02  cat A20<br>D=0.01<br>Lee a<br>SOOnnRe 2 6A maciltAeee eee ate00ctf<br>Fe D=0.005  StH anil<br>errr [20] RθJA(t) = r(t) * RθJA<br>RθJA= 60 ℃ /W<br>D=Single Pulse  Duty Cycle, D = t1 / t2<br>0.001<br>0.000001 0.00001  0.0001  0.001  0.01  0.1  1  10  100  1000<br>t1, PULSE DURATION TIME (sec)<br>Figure 2. Transient Thermal Resistance<br>, PEAK TRANSIENT POWER (W)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, PEAK TRANSIENT POIWER (W)<br>(PK)<br>P<br>**----- End of picture text -----**<br>


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**DMP4025SFG** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|||||||||
|---|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**||
|**OFF CHARACTERISTICS**||||||||
|Drain-Source Breakdown Voltage|BVDSS|-40|||V|ID= -250µA,VGS= 0V||
|Zero Gate Voltage Drain Current|IDSS|||-1.0|µA|VDS= -40V,VGS= 0V||
|Gate-Source Leakage|IGSS|||100|nA|VGS=20V,VDS= 0V||
|**ON CHARACTERISTICS**||||||||
|Gate Threshold Voltage|VGS(TH)|-0.8|-1.3|-1.8|V|ID= -250A,VDS= VGS||
|Static Drain-Source On-Resistance (Note 8)|RDS(ON)||18|25|mΩ|VGS= -10V,ID= -3A||
||||30|45||VGS= -4.5V,ID= -3A||
|Forward Transconductance(Notes 8 & 9)|gfs||16.6||S|VDS= -5V,ID= -3A||
|Diode Forward Voltage(Note 8)|VSD||-0.7|-1.0|V|IS= -1A,VGS= 0V||
|**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~——_—ee~~<br>~~ee~~||||||||
|Input Capacitance<br>~~——_—~~|Ciss<br>~~ee~~|<br>~~ee~~|1643<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= -20V, VGS= 0V<br>f = 1MHz<br>~~ee~~||
|Output Capacitance<br>~~——_—~~|Coss<br>~~ee~~|<br>~~ee~~|179<br>~~ee~~|<br>~~ee~~||||
|Reverse Transfer Capacitance<br>~~——_—~~|Crss<br>~~ee~~|<br>~~ee~~|128<br>~~ee~~|<br>~~ee~~||||
|Gate Resistance<br>~~——_—~~|Rg<br>~~ee~~|<br>~~ee~~|6.43<br>~~ee~~|<br>~~ee~~|Ω<br>~~ee~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~||
|Total Gate Charge(Note 10)<br>~~——_— ~~|Qg<br> ~~ee~~|<br>~~ee~~|14.0<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~|VGS= -4.5V<br>~~ee~~|VDS= -20V<br>ID= -3A<br>~~ee~~|
|Total Gate Charge(Note 10)|Qg||33.7|||VGS= -10V||
|Gate-Source Charge(Note 10)|Qgs||5.5|||||
|Gate-Drain Charge(Note 10)|Qgd||7.3|||||
|Turn-On DelayTime(Note 10)|tD(ON)||6.9||ns|VDD= -20V, VGS= -10V<br>ID= -3A||
|Turn-On Rise Time(Note 10)|tR||14.7|||||
|Turn-Off DelayTime(Note 10)|tD(OFF)||53.7|||||
|Turn-Off Fall Time(Note 10)|tF||30.9|||||



- Notes: 8. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%. 

   9. For design aid only, not subject to production testing. 

   10. Switching characteristics are independent of operating junction temperatures. 

## **Typical Characteristics** 

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30 30<br>25 25 V     = -5VDS T  = 150°CA<br>20 ) [A] (TN 20 T  = 25°CT  = 85°CAA T  = 125°CA<br>E<br>RR T  = -55°CA<br>U<br>15 VA aia C 15 .)<br>I [N] A<br>R<br>D<br>10 10<br>, D<br>- [I]<br>5 = 5 ooo<br>0 0<br>0 0.5 1 1.5 2 0 1 2 3 4 5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -V    , GATE-SOURCE VOLTAGE (V)GS<br>Figure 3 Typical Output Characteristic Figure 4  Typical Transfer Characteristic<br>, DRAIN CURRENT (A)<br>D<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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0.05 ) 0.04<br>(<br>V     = -10VGS<br>N [CE]<br>0.04<br>T [A]<br>PTET<br>T y 0.03 b ee<br>I [S] S T  = 150°CA<br>0.03 oer) VGS = -4.5V E E E T  = 125°CA<br>O [N-RE]<br>T  = 85°CA<br>0.02<br>SD = T  = 25°CA<br>0.02 O [URCE]<br>VGS = -10V I [N-S] T  = -55°CA<br>0.01<br>0.01 ——_— D [RA]<br>,<br>[S(ON)] D<br>0 PEEP} R 0 RRFf | | tf R |<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN-SOURCE CURRENT (A) -I  , DRAIN CURRENT (A)D<br>Figure 5 Typical On-Resistance  Figure 6 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.7 0.06<br>1.5 V GS = -10V 0.05<br>ID = -20A<br>1.3 aie 0.04 BRR<br>BRRREEY VGS = -4.5V 2 BEREEEEE<br>ID = -10A<br>1.1 0.03 VGS = -4.5V<br>ee ID = -10A<br>0.9 | 0.02 eet<br>ESeanee Te V pt GS = -10V<br>ID = -20A<br>0.7 Fane 0.01 +7,<br>0.5 PE EEEEELL 0 eTEEEELLL | i<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE  ( °C 癈 ) TA, AMBIENT TEMPERATURE  ( 癈 °C))<br>Figure 7 On-Resistance Variation with Temperature Figure 8 On-Resistance Variation with Temperature<br>[V)] 2.0 2018 P| |ify<br>16<br>T [AGE(]<br>1.5<br>[A)]<br>V [OL] T [(] 14 T   = 25°CA<br>D [N] E<br>O [L] RR 12 Ser Ar<br>U<br>[SH] E 1.0 I   = -1mAD C 10 Pi || te<br>R E<br>C<br>T [H] R 8 P| td<br>I   = -250µAD<br>[OU] S 6 P| || | lfttA<br>[ATE] G, 0.5 - [I,] S<br>4 Pi tt<br>( [TH)]<br>G [S]<br>2 P| |ty, yy<br>- [V]<br>0 — 0 P|]PtEYE{fill ft | Uf| f t t<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>T  , AMBIENT TEMPERATURE (°C)A -V    , SOURCE-DRAIN VOLTAGE (V)SD<br>Figure 9 Gate Threshold Variation vs. Ambient Temperature Figure 10 Diode Forward Voltage vs. Current<br>DSON<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br><br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, SOURCE CURRENT (A)<br>S<br>, GATE THRESHOLD VOLTAGE (V)  -I<br>GS(TH)<br>-V<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DSON<br>**----- End of picture text -----**<br>


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10,000 ee es ee S|<br>ee ee<br>a a<br>a Oe GC<br>a<br>Ciss<br>1,000 |eS[| a|.a | |_<br>———————_—_—_——=————<br>C oss<br>100 _ Crss<br>es<br>10<br>0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 11 Typical Total Capacitance<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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10<br>VDS = -20V /<br>8<br>ID = -12A Y<br>6 ff | / Venn<br>4 —~<br>2 /<br>0 A<br>0 5 10 15 20 25 30 35 40<br>Qg, TOTAL GATE CHARGE (nC)<br>Figure 13 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>-V<br>GS<br>**----- End of picture text -----**<br>


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10,000 SS|<br>——_—$—————<br>ee<br>re ee ee eee<br>[nA)] T [(] 1,000 —— T   = 150°CA Td<br>[N] E<br>R = —— — Oe——=——<br>R<br>UC } T   = 125°CA<br>100<br>L [EAKAGE] T   = 85°CA<br>, S<br>D [S] 10<br>- [I] t t t t t t t<br>T   = 25°CA<br>1<br>0 5 10 15 20 25 30 35 40<br>-V    , DRAIN-SOURCE VOLTAGE (V)DS<br>Figure 12 Typical Leakage Current<br>vs. Drain-Source Voltage<br>100<br>RDS(ON)  PW=10μs<br>LIMITED  | eNo KETTTIIN<br>a or<br>ING JETT<br>10  URNLOSS RE NAD<br>A | | NA NI OIN TNPy<br>NESEZAN AIAN<br>PW=100μs   NA ON]<br>1  PW=1ms<br>=a PW=10ms   PRESS ZONE<br>F=F FE SSN<br>0.1  TTJ(MAX)C=25 ℃ =150 ℃ ooPT PW  TTA =100ms  PW=1s   SCNTANY]NE<br>Single Pulse  Pe NE<br>DUT on 1inch  DC<br>Copper Board<br>VGS=10V  Ce Co<br>0.01  aorBEGG<br>0.1  1  10  100<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 14. SOA, Safe Operation Area<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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**DMP4025SFG** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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PowerDI3333-8<br>**----- End of picture text -----**<br>


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A1 A3<br>A<br>PowerDI3333-8<br>Seating Plane<br>Dim  Min  Max  Typ<br>A  0.75 0.85 0.80<br>aenoel = A1  0.00 0.05 0.02<br>D<br>L(4x) A3   0.203<br>D2 b  0.27  0.37  0.32<br>1 b2  0.15 0.25 0.20<br>D  3.25 3.35 3.30<br>Pin #1 ID D2  2.22  2.32  2.27<br>b2(4x) E4 E  3.25 3.35 3.30<br>E2  1.56 1.66 1.61<br>E3 0.79 0.89 0.84<br>E<br>E4  1.60 1.70 1.65<br>E2 E3 e   0.65<br>L  0.35 0.45 0.40<br>L1    0.39<br>L1(3x) z    0.515<br>8 All Dimensions in mm<br>z(4x) b<br>e<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI3333-8** 

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X3<br>X2<br>8<br>Y4<br>Y1 X1<br>Y2<br>Y3<br>fe<br>Y<br>1<br>X non C |<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C 0.650<br>X  0.420<br>X1  0.420<br>X2  0.230<br>X3  2.370<br>Y  0.700<br>Y1  1.850<br>Y2  2.250<br>Y3  3.700<br>Y4  0.540<br>**----- End of picture text -----**<br>


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**DMP4025SFG** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2018, Diodes Incorporated 

**www.diodes.com** 

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- [View this product on Novapart](https://novapart.co/products/DMP4025SFG-13/power-mosfet-p-channel-40-v-72-a-0018-ohm-powerdi)
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- [Supplier page](https://es.farnell.com/diodes-inc/dmp4025sfg-13/mosfet-p-ch-40v-7-2a-powerdi-3333/dp/3943799RL)
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