# Power MOSFET, P Channel, 40 V, 8 A, 0.018 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3943798RL/)

**URL**: https://novapart.co/products/DMP4025LSSQ-13/power-mosfet-p-channel-40-v-8-a-0018-ohm-soic
**SKU**: DMP4025LSSQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4320
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.52W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 1.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943798RL/)

BOD 

**DMP4025LSSQ** [ **40V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**BVDSS**<br>**RDS(ON)Max**<br>**ID Max (A)**<br>**TA = +25°C**<br>-40V<br>25mΩ @ VGS= -10V<br>-8.0A<br>45mΩ @ VGS = -4.5V<br>-6.0A|||
|**BVDSS**|**RDS(ON)Max**|**ID Max (A)**<br>**TA = +25°C**|
|-40V|25mΩ @ VGS= -10V|-8.0A|
||45mΩ @ VGS = -4.5V|-6.0A|



## **Features and Benefits** 

- Low RDS(ON) – Minimizes Conduction Losses 

- Fast Switching Speed – Minimizes Switching Losses 

- **Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

## **Mechanical Data** 

   - Case: SO-8 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- Motor Control 

- Backlighting 

- DC-DC Converters 

   - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.074 grams (Approximate) 

- Printer Equipment 

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SO-8<br>Top View<br>**----- End of picture text -----**<br>


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Pin-Out Top View<br>**----- End of picture text -----**<br>


Internal Schematic 

## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP4025LSSQ-13|SO-8|2,500/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html 

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

**P4025LS YY WW** 

8 = Manufacturer’s Marking P4025LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 - 53) 

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DMP4025LSSQ Document Number: DS38881 Rev: 1 - 2 

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**DMP4025LSSQ** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|
|||||||
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|20||
|Continuous Drain Current|VGS= -10V|(Note7)|ID|-8.0|A|
|||TA= +70°C<br>(Note7)||-6.9||
|||(Note 6)||-6.0||
|Pulsed Drain Current|VGS= -10V|(Note 8)|IDM|-30||
|Continuous Source Current(BodyDiode)||(Note 8)|IS|-8.0||
|Pulsed Source Current(BodyDiode)||(Note 8)|ISM|-30||



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Note 6)|PD|1.52|W|
||(Note7)||2.4||
|Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|82|°C/W|
||(Note7)||52||
|Thermal Resistance,Junction to Lead|(Note 9)|RθJL|48.85||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**<br>~~_——————————————————————~~|**Symbol**<br>~~_——————————————————————~~|**Min**<br>~~_——————————————————————~~|**Typ**<br>~~_——————————————————————~~|**Max**<br>~~_——————————————————————~~|**Unit**<br>~~_——————————————————————~~|**Test Condition**<br>~~_——————————————————————~~||
|**OFF CHARACTERISTICS**(Note 10)<br>~~_——————————————————————~~||||||||
|Drain-Source Breakdown Voltage<br>~~_——————————————————————~~|BVDSS<br>~~_——————————————————————~~|-40<br>~~_——————————————————————~~|<br>~~_——————————————————————~~<br>~~ppp~~|<br>~~_——————————————————————~~<br>~~ppp~~|V<br>~~_——————————————————————~~<br>~~ppp~~|ID= -250µA,VGS= 0V<br>~~_——————————————————————~~<br>~~ppp~~||
|Zero Gate Voltage Drain Current<br>~~pp~~|IDSS<br>~~pp~~|<br>~~pp~~|<br>~~pp~~<br>~~ppp~~|-1.0<br>~~pp~~<br>~~ppp~~|µA<br>~~pp~~<br>~~ppp~~|VDS= -40V,VGS= 0V<br>~~pp~~<br>~~ppp~~||
|Gate-Source Leakage<br>~~pp~~|IGSS<br>~~pp~~|<br>~~pp~~|<br>~~pp~~<br>~~ppp~~|100<br>~~pp~~<br>~~ppp~~|nA<br>~~pp~~<br>~~ppp~~|VGS=20V,VDS= 0V<br>~~pp~~<br>~~ppp~~||
|**ON CHARACTERISTICS**(Note 10)<br>~~ppp~~<br>~~QO~~||||||||
|Gate Threshold Voltage<br>~~QQ~~|VGS(TH)<br>~~QQ~~|-0.8<br>~~QQ~~|-1.3<br>~~QQ~~<br>~~——~~|-1.8<br>~~QQ~~<br>~~QO~~<br>~~—— ————~~|V<br>~~QQ~~<br>~~QO~~<br>~~————~~|ID= -250µA,VDS= VGS<br>~~QQ~~<br>~~————~~||
|Static Drain-Source On-Resistance|RDS(ON)||18<br>~~——~~|25<br>~~QO~~<br>~~—— ————~~|mΩ<br>~~QO~~<br>~~————~~|VGS= -10V,ID= -3A<br>~~————~~||
||||30<br>~~——~~|45<br>~~—— ————~~||VGS= -4.5V,ID= -3A<br>~~————~~||
|Forward Transconductance<br>~~a~~|gFS<br>~~a~~|<br>~~a~~|16.6<br>~~——~~<br>~~a~~|<br>~~—— ————~~<br>~~a~~|S<br>~~————~~<br>~~a~~|VDS= -5V,ID= -3A<br>~~————~~<br>~~a~~||
|Diode Forward Voltage<br>~~a~~|VSD<br>~~a~~|<br>~~a~~|-0.7<br>~~a~~|-1.0<br>~~a~~|V<br>~~a~~|IS= -1A,VGS= 0V<br>~~a~~||
|**DYNAMIC CHARACTERISTICS**(Note 11)||||||||
|Input Capacitance<br>~~ss~~|CISS<br>~~ss~~||1,640<br>~~de~~|<br>~~de~~|pF<br>~~de~~|VDS= -20V, VGS= 0V<br>f = 1MHz<br>~~de~~||
|Output Capacitance<br>~~ss~~|COSS<br>~~ss~~||179<br>~~de~~|<br>~~de~~||||
|Reverse Transfer Capacitance<br>~~ss~~|CRSS<br>~~ss~~||128<br>~~de~~|<br>~~de~~||||
|Gate Resistance<br>~~————~~|RG<br>~~————~~|<br>~~————~~|6.43<br>~~————~~|<br>~~————~~|Ω<br>~~————~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~————~~||
|Total Gate Charge<br>~~————~~|QG<br>~~————~~|<br>~~————~~|14.0<br>~~————~~|<br>~~————~~|nC<br>~~————~~<br>~~ee~~|VGS= -4.5V<br>~~————~~|VDS= -20V<br>ID= -3A<br>~~————~~<br>~~ee~~|
|Total Gate Charge<br>~~————~~|QG<br>~~————~~|<br>~~————~~|33.7<br>~~————~~|<br>~~————~~||VGS= -10V<br>~~————~~<br>~~ee~~||
|Gate-Source Charge<br>~~eS~~|QGS<br>~~eS~~|<br>~~eS~~|5.5<br>~~eS~~|<br>~~eS~~||||
|Gate-Drain Charge<br>~~eS~~<br>~~————~~|QGD<br>~~eS~~<br>~~————~~|<br>~~eS~~|7.3<br>~~eS~~|<br>~~eS~~||||
|Turn-On DelayTime<br>~~eS~~<br>~~————~~|tD(ON)<br>~~eS~~<br>~~————~~|<br>~~eS~~|6.9<br>~~eS~~|<br>~~eS~~|ns<br>~~ee~~|VDD= -20V, VGS= -10V<br>ID= -3A<br>~~ee~~||
|Turn-On Rise Time<br>~~————~~|tR<br>~~————~~||14.7|||||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)<br>~~————~~||53.7|||||
|Turn-Off Fall Time<br>~~————~~|tF<br>~~————~~||30.9|||||



7. Same as Note (6), except the device is surface mounted on 25mm x 25mm x 1.6mm FR4 PCB. 

8. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300µs – pulse width by maximum junction temperature. 

9. Thermal resistance from junction to solder-point (at the end of the drain lead). 

10. Short duration pulse test used to minimize self-heating effect. 

11. Guaranteed by design. Not subject to production testing. 

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DMP4025LSSQ Document Number: DS38881 Rev: 1 - 2 

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**DMP4025LSSQ** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
100<br>90 Single Pulse<br>RJA = 82C/W<br>80 RJA(t) = r(t) *  RJA<br>TJ - TA = P * RJA(t)<br>70 a a<br>60<br>50<br>(Ne eee oe ee<br>40 Se \<br>30<br>EN TC TT<br>20 SY<br>10 SUNTa TTTa<br>0 UA Saint<br>0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (sec)<br>Fig. 1 Single Pulse Maximum Power Dissipation<br>1<br>D = 0.7<br>Pe Se<br>D = 0.5<br>TN = eee<br>SM D = 0.3 AATT IESE eae 7 Tn Il<br>Lh meer lll | LM LLL El<br>0.1<br>Ce D = 0.1 NN esp<br>Pt D = 0.9<br>D = 0.05<br>aN emer a<br>NaEa |<br>D = 0.02<br>I ett)<br>0.01 ee D = 0.01 a LIU ELIE LTTTIMI<br>fa ce 9 | |<br>Pees{|__| D = 0.005 ieaeeee AAce ee ee oe ee eeeeee 0 ee ee ee RRJAJA oe (t)  = 83°C/W= Oe  r(t)   ae * RJA TTTCoonETH Th<br>Duty Cycle, D = t1/ t2<br>Single Pulse<br>0.001 Cro CO i<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Fig. 2 Transient Thermal Resistance<br>, PEAK TRANSIENT POIWER (W)<br>(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP4025LSSQ** 

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Typical Characteristics<br>30 30<br>25 25 VDS = -5V TA = 150°C<br>TA = 85°C<br>20 [ee 20 Ty T A = 25°C TA = 125 ° C<br>TA = -55°C<br>15 15<br>Las g<br>10 10<br>5 oWun—= 5 C OOLCL<br>0 Ze 0 Asean<br>0 0.5 1 1.5 2 0 1 2 3 4 5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 4  Typical Transfer Characteristic<br>Fig. 3 Typical Output Characteristic<br>0.05 0.04<br>V GS  = -10V<br>0.04<br>PTET pee<br>0.03<br>TA = 150°C<br>0.03 VGS = -4.5V T A  = 125°C<br>TA = 85°C<br>—) Eee 0.02 ==<br>0.02 Tp EE. TA = 25°C<br>VGS = -10V TA = -55°C<br>0.01<br>0.01 ToT eee<br>0 ELLE. 0 aP| | | ft ff<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 5 Typical On-Resistance  Fig. 6 Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.7 0.06<br>1.5 V GS = -10V 0.05<br>ID = -20A<br>1.3 TTS 0.04 TCELELLL<br>TTT LAE<br>VGS = -4.5V<br>ID = -10A<br>1.1 0.03 VGS = -4.5V<br>ID = -10A<br>0.9 Coe 0.02 er<br>eer) = ET V LEEe GS = -10V<br>ID = -20A<br>0.7 ATCCCe) =  ee 0.01<br>0.5 0<br>-50 POPC) -25 0 25 50 75 100 125 150 Ss -50 GEE -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 7 On-Resistance Variation with Temperature Fig. 8 On-Resistance Variation with Temperature<br>)<br>,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DSON<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>D<br>, DRAIN CURRENT (A)<br>-I<br>, DRAIN-SOURCE<br>R<br>ON-RESISTANCE (NORMALIZED)<br>DSON<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>


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DMP4025LSSQ Document Number: DS38881 Rev: 1 - 2 

May 2016 © Diodes Incorporated 

**DMP4025LSSQ** ~~Co~~ 

## DOWLS. 

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**----- Start of picture text -----**<br>
2.0<br>1.5<br>1.0 I D  = -1mA<br>ID = -250µA<br>0.5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C)<br>Fig. 9 Gate Threshold Variation vs. Ambient Temperature<br>10,000<br>a—— |<br>Ciss<br>1,000<br>_<br>C oss<br>Bee<br> —<br>100 Crss<br>_—<br>——<br>ee<br>a<br>10<br>Pot tT tf ft<br>0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Typical Total Capacitance<br>10<br>8 TL VDS = -20V LA<br>ID = -12A<br>6 ae cn<br>4 LEY EL<br>2 ELE<br>0<br>0 5 10 15 20 25 30 35 40<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 13 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>C, CAPACITANCE (pF)<br>, GATE THRESHOLD VOLTAGE (V)<br>-V<br>GS(TH)<br>**----- End of picture text -----**<br>


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2018 PE et Tt Ty<br>16 PP ey ET yy<br>14 TA = 25°C<br>12 eePi tt Tt yf<br>10 PE eT EE<br>8 PTET [TTA] gt<br>PEE]<br>6<br>4 PT eeEyeEt ey yy<br>2 PEE;<br>0 PE eT EyTTA |EyTT<br>0.2 0.4 0.6 0.8 1.0 1.2<br>-VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 10 Diode Forward Voltage vs. Current<br>10,000<br>+}<br>|__| TA = 150°C  —_  | J<br>1,000<br>=SS<br>ESSE<br>T A  = 125°C<br>100<br>| {| | | ff<br>=<br>TA = 85°C<br>SS ES<br>10 S| | | | | | |<br>——————<br>eee<br>TA = 25°C<br>1<br>SE oSeee<br>0 5 10 15 20 25 30 35 40<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 12 Typical Leakage Current<br>vs. Drain-Source Voltage<br>DSS<br>, LEAKAGE CURRENT (nA)<br>-I<br>S<br>, SOURCE CURRENT (A)<br>-I<br>**----- End of picture text -----**<br>


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DMP4025LSSQ Document Number: DS38881 Rev: 1 - 2 

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**DMP4025LSSQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SO-8<br>SO-8<br>Dim  Min  Max<br>A  –  1.75<br>E1 E A1  0.10  0.20<br>Gauge Plane A2  1.30  1.50<br>A1 L Seating Plane A3  0.15  0.25<br>b  0.3  0.5<br>Detail ‘A’ D  4.85  4.95<br>E  5.90  6.10<br>| Be<br>h 7°~9° E1  3.85 3.95<br>45° e  1.27 Typ<br>Detail ‘A’ h  –  0.35<br>A2 A A3 L  0.62  0.82<br> 0°  8°<br>e b =<br>All Dimensions in mm<br>D<br>0.254<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SO-8** 

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**----- Start of picture text -----**<br>
X<br>Wag 7<br>C1<br>C2<br>Y<br>whe<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**X**|0.60|
|**Y**|1.55|
|**C1**|5.4|
|**C2**|1.27|



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DMP4025LSSQ Document Number: DS38881 Rev: 1 - 2 

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**DMP4025LSSQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

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DMP4025LSSQ Document Number: DS38881 Rev: 1 - 2 

May 2016 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP4025LSSQ-13/power-mosfet-p-channel-40-v-8-a-0018-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp4025lssq-13/mosfet-p-ch-40v-8a-soic/dp/3943798RL)
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