# Power MOSFET, P Channel, 40 V, 8.6 A, 0.018 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3943796RL/)

**URL**: https://novapart.co/products/DMP4025LK3-13/power-mosfet-p-channel-40-v-86-a-0018-ohm-to-252
**SKU**: DMP4025LK3-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2230
**Stock**: 200+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.6A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 1.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943796RL/)

**DMP4025LK3** Cd 

**40V P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
|**BVDSS**<br>**RDS(on)max**<br>**ID max**<br>**TA = +25°C**<br>**(Note 6)**<br>-40V<br>25mΩ@VGS= -10V<br>-8.6A<br>45mΩ@VGS = -4.5V<br>-7.0A|||
|**BVDSS**|**RDS(on)max**|**ID max**<br>**TA = +25°C**<br>**(Note 6)**|
|-40V|25mΩ@VGS= -10V|-8.6A|
||45mΩ@VGS = -4.5V|-7.0A|



## **Features** 

- Low On-Resistance 

- Fast Switching Speed 

- Low Input/Output Leakage 

- **Lead-Free Finish; RoHS compliant (Note 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

## **Description** 

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Applications** 

- Motor control 

- Backlighting 

- DC-DC Converters 

## **Mechanical Data** 

   - Case: TO252 (DPAK) 

   - Case Material: Molded Plastic, “Green” Molding Compound.  UL Flammability Classification Rating 94V-0 (Note 1) 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

   - Terminals Connections: See diagram below 

   - Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.315 grams (approximate) 

- Printer equipment 

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TO252<br>**----- End of picture text -----**<br>


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Top View  Top View  Device symbol<br>Pin Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|
|DMP4025LK3-13|P4025L|13|16|2,500|



- Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

= Manufacturer’s Marking **YYWW** P4025L = Product Type Marking Code YYWW = Date Code Marking **P4025L** YY = Year (ex: 10 = 2010) WW = Week (01 - 53) ~~_~~ a ~~m~~ 

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**DMP4025LK3** 

**Maximum Ratings** (@TA = +25°C unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Maximum Ratingsgss** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|-40|V|
|Gate-Source Voltage|||VGSS|20||
|Continuous Drain Current|VGS= -10V|(Notes 6)|ID|-8.6|A|
|||TA= +70°C(Notes 6)||-6.9||
|||(Notes 5)||-6.7||
|Pulsed Drain Current|VGS= -10V|(Notes 7)|IDM|-35||
|Continuous Source Current (Body diode)||(Notes 7)|IS|-8.6||
|Pulsed Source Current (Body diode)||(Notes 7)|ISM|-35||



**Thermal Characteristics** (@TA = +25°C unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|(@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Power Dissipation|(Notes 5)|PD|1.7|W|
||(Notes 6)||2.78||
|Thermal Resistance, Junction to Ambient|(Notes 5)|RθJA|74|°C/W|
||(Notes 6)||45||
|Thermal Resistance, Junction to Case|(Notes 6)|RθJC|7.1||
|Thermal Resistance, Junction to Lead|(Notes 8)|RθJL|1.43||
|Operating and Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



Notes: 5. For a device surface mounted on minimum recommended FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 

6. Same as note (5), except the device is surface mounted on 25mm X 25mm X 1.6mm FR4 PCB. 

7. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300µs – pulse width by maximum junction temperature. 

8. Thermal resistance from junction to solder-point (at the end of the drain lead). 

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**DMP4025LK3** 

## **Thermal Characteristics** 

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**----- Start of picture text -----**<br>
1.8 100<br>1.6 90 Single Pulse<br>—rAL Tt tt tt a RJA = 70C/W l<br>1.4 80 RJA(t) = r(t) *  RJA<br>Pi NI Te yd a a a TJ - TA = P * RJA(t)<br>70<br>1.2 PT IN | ey yt a a ll<br>Ne 60 CUA<br>1 ee<br>50<br>0.8<br>HEH 40<br>0.6<br>pt tt tN fT<br>30<br>0.4 rT ONT ST TT Te<br>20<br>0.2 ee TT ETT<br>10<br>0 oo Bi 00 0 WN<br>0 20 40 60 80 100 120 140 ‘ 160 0 UICC<br>0.0001 0.001 0.01 ETI 0.1 TIN 1 Tine 10 100 1,000<br>TA, AMBIENT TEMPERATURE (C) t1, PULSE DURATION TIME (sec)<br>Figure 1. Power Dissipation vs. Ambient Temperature Figure 2.  Single Pulse Maximum Power Dissipation<br>1<br>D = 0.7<br>COT D = 0.5<br>TT D = 0.3<br>0.1<br>D = 0.1<br>D = 0.9<br>PIF D = 0.05<br>aS D = 0.02 a ae<br>0.01<br>D = 0.01<br>D = 0.005 RJA(t) = r(t)  *  RJA<br>0.001 SS cll Eft Single Pulse ier ETI TN StTTT TTI teETEPT RDuty Cycle, D = t1/ t2 JA  = 70°C/W mal lh<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 3.  Transient Thermal Resistance<br>, POWER DISSIPATION (W)<br>D<br>P<br>, PEAK TRANSIENT POIWER (W)<br>(PK)<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP4025LK3** 

## **Electrical Characteristics** (@TA = +25°C unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C unless otherwise specified.)A = +25°C unless otherwise specified.)= +25°C unless otherwise specified.)|
|---|---|---|---|---|---|---|---|
|||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**||
|**OFF CHARACTERISTICS**||||||||
|Drain-Source Breakdown Voltage|BVDSS|-40|||V|ID= -250µA, VGS= 0V||
|Zero Gate Voltage Drain Current|IDSS|||-1|µA|VDS= -40V, VGS= 0V||
|Gate-Source Leakage|IGSS|||100|nA|VGS=20V, VDS= 0V||
|**ON CHARACTERISTICS**||||||||
|Gate Threshold Voltage|VGS(th)|-0.8|-1.3|-1.8|V|ID= -250µA, VDS= VGS||
|Static Drain-Source On-Resistance (Note 9)|RDS (ON)||18|25|mΩ|VGS= -10V, ID= -3A||
||||30|45||VGS= -4.5V, ID= -3A||
|Forward Transconductance (Notes 9 & 10)|gfs||16.6||S|VDS= -5V, ID= -3A||
|Diode Forward Voltage (Note 9)|VSD||-0.7|-1|V|IS= -1A, VGS= 0V||
|**DYNAMIC CHARACTERISTICS(Note 10)**||||||||
|Input Capacitance|Ciss||1643||pF|VDS= -20V, VGS= 0V<br>f = 1MHz||
|Output Capacitance|Coss||179|||||
|Reverse Transfer Capacitance|Crss||128|||||
|Gate Resistance|Rg||6.43||Ω|VDS= 0V, VGS= 0V, f = 1MHz||
|Total Gate Charge (Note 11)|Qg||14||nC|VGS= -4.5V|VDS= -20V<br>ID= -3A|
|Total Gate Charge (Note 11)|Qg||33.7|||VGS= -10V||
|Gate-Source Charge (Note 11)|Qgs||5.5|||||
|Gate-Drain Charge (Note 11)|Qgd||7.3|||||
|Turn-On Delay Time (Note 11)|tD(on)||6.9||ns|VDD= -20V, VGS= -10V<br>ID= -3A||
|Turn-On Rise Time (Note 11)|tr||14.7|||||
|Turn-Off Delay Time (Note 11)|tD(off)||53.7|||||
|Turn-Off Fall Time (Note 11)|tf||30.9|||||



Notes: 9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%. 

10. For design aid only, not subject to production testing. 

11. Switching characteristics are independent of operating junction temperatures. 

## **Typical Characteristics** 

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30<br>Veg = - 10V<br>gs Veg = - 4.5V<br>25 Vg = -4.0V<br>20<br>Veg = - 3 . 5V<br>15<br>10 Veg = -3.0V<br>5<br>Veg =-2.0V Veg =-2.2My Ves = -2:5V<br>0<br>0 0.5 1 1.5 2<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 4.  Typical Output Characteristic<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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30<br>|<br>25 VDS = -5V TA = 85°C y| T A  = 150°C<br>20 T A = 25°C TA = 125 ° C<br>TA = -55°C<br>15<br>10<br>5<br>Yj<br>A<br>0<br>0 1 2 3 4 5<br>-VGS, GATE-SOURCE VOLTAGE (V)<br>Figure 5.  Typical Transfer Characteristic<br>, DRAIN CURRENT (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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0.05 0.04<br>V GS  = -10V<br>0.04<br>0.03<br>TA = 150°C<br>0.03 | Lp V GS  = -4.5V SNE TA = 125°C<br>TA = 85°C<br>0.02<br>0.02 TA = 25°C<br>VGS = -10V TA = -55°C<br>0.01<br>0.01<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Figure 6.  Typical On-Resistance  Figure 7.  Typical On-Resistance<br>vs. Drain Current and Gate Voltage  vs. Drain Current and Temperature<br>1.7 0.06<br>1.5 V GS = -10V 0.05<br>ID = -20A<br>1.3 0.04<br>VGS = -4.5V<br>ID = -10A<br>1.1 0.03 VGS = -4.5V<br>ID = -10A<br>0.9 0.02<br>VGS = -10V<br>ID = -20A<br>a Lee<br>0.7 0.01<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Figure 8.  On-Resistance Variation with Temperature Figure 9.  On-Resistance Variation with Temperature<br>2.0 20<br>18<br>16<br>1.5<br>14 T A  = 25°C<br>12<br>1.0 ID = -1mA 10<br>8<br>ID = -250µA<br>6<br>0.5<br>4<br>2<br>0 aL 0 |<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Figure 10.  Gate Threshold Variation vs. Ambient Temperature Figure 11.  Diode Forward Voltage vs. Current<br>) )<br>, DRAIN-SOURCE ON-RESISTANCE ( ,  DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)GS(TH) -IS<br>-V<br>**----- End of picture text -----**<br>


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10,000 10,000<br>TA = 150°C<br>1,000<br>Ciss<br>1,000<br>SS SSS ==aaeeee T A  = 125°C<br>C oss 100<br>100 Crss TA = 85°C<br>10<br>TA = 25°C<br>10 1<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 12.  Typical Total Capacitance Figure 13.  Typical Leakage Current<br>vs. Drain-Source Voltage<br>10 100<br>RDS(on)<br>Limited<br>8 V DS  = -20V = ONINENS tit<br>ID = -12A 10 ONESill<br>6 DC<br>ONIN TRANG<br>1 PW = 10s<br>QAI<br>PW = 1s<br>4 Cee PW = 100ms PNCINEE SLL<br>P W = 10ms<br>0.1 HH T  = 150°C eS P W = 1ms RE Sillaan<br>2 TJ(max)A = +25°C —es PW = 100µs eee<br>VGS = 10V Lea<br>Single Pulse<br>DUT on 1 * MRP Board<br>0 0.01 a lll<br>0 5 10 15 20 25 30 35 40 0.1 1 10 100<br>Qg, TOTAL GATE CHARGE (nC)  -VDS, DRAIN-SOURCE VOLTAGE (V)<br>Figure 14.  Gate-Charge Characteristics Figure 15.  SOA, Safe Operation Area<br>C, CAPACITANCE (pF) , LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, DRAIN CURRENT (A)<br>, GATE-SOURCE VOLTAGE (V) GS -ID<br>-V<br>**----- End of picture text -----**<br>


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**DMP4025LK3** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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**----- Start of picture text -----**<br>
TO252<br>; E :<br>b3 > A c2 ee Dim Min A  2.19  2.39  Max  ee 2.29 Typ<br>L3 A1  0.00  0.13  0.08<br>| = A2  0.97  1.17  1.07<br>b  0.64  0.88 0.783<br>A2 E1 D1 a b2  0.76  1.14  0.95<br>D b3  5.21  5.46  5.33<br>H c2  0.45  0.58 0.531<br>D  6.00  6.20  6.10<br>ee<br>| ns D1  5.21  ee  <br>L4 A1 e    2.286<br>| E  6.45  6.70  6.58<br>s L es E1  4.32  ee  <br>H  9.40 10.41 9.91<br>e L  1.40  1.78  1.59<br>2X b2 3X b a L3  0.88  1.27  1.08<br>ns<br>L4  0.64  1.02  0.83<br>eeee<br>ee a  0°  ee 10°  <br>-___ All Dimensions in mm<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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X2<br>Y2 T<br>|i L - fF C [Z]<br>*<br>Y1<br>>| |<br>X1 E1<br>**----- End of picture text -----**<br>


|**Dimensions**|**Value(in mm)**|
|---|---|
|**Z**|11.6|
|**X1**|1.5|
|**X2**|7.0|
|**Y1**|2.5|
|**Y2**|7.0|
|**C**|6.9|
|**E1**|2.3|



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**DMP4025LK3** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

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---

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