# Power MOSFET, P Channel, 40 V, 9.1 A, 7000 µohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:3127367RL/)

**URL**: https://novapart.co/products/DMP4015SSSQ-13/power-mosfet-p-channel-40-v-91-a-7000-ohm-soic
**SKU**: DMP4015SSSQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4820
**Stock**: 100+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-9.1A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.45W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 1.45W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.007ohm |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9.1A |
| Drain Source On State Resistance | 7000µohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3127367RL/)

**DMP4015SSSQ P-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON)Max**|**ID**<br>**TA = +25°C**|
|-40V|11mΩ @ VGS= -10V|-10.1A|
||15mΩ @ VGS= -4.5V|-8.8A|



## **Features and Benefits** 

- 100% Unclamped Inductive Switch (UIS) test in production 

- Low  Input Capacitance 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

- Case: SO-8 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

## **Applications** 

- DC-DC Converters 

- Power Management Functions 

   - Terminal Connections: See Diagram 

   - Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

   - Weight: 0.074 grams (Approximate) 

- Analog Switch 

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SO-8<br>Top View<br>**----- End of picture text -----**<br>


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D<br>S Tr TT D<br>S oT = D<br>G<br>S mn TT D<br>G co mm D<br>S<br>Top View  Equivalent Circuit<br>Internal Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|**Ordering Informationg Information Information** (Note 5)|
|---|---|---|---|
|||||
|**Part Number**|**Qualification**|**Case**|**Packaging**|
|DMP4015SSSQ-13|Automotive|SO-8|2,500/Tape &Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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8 5<br>PEEL ELT<br>P4015SS<br>YY WW<br>1 4<br>PFT LI LI LU<br>**----- End of picture text -----**<br>


= Manufacturer’s Marking P4015SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53) 

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## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**|
|---|
|Drain-Source Voltage<br>VDSS<br>-40<br>V<br>Gate-Source Voltage<br>VGSS<br>±25<br>V<br>Continuous Drain Current (Note 6) VGS= -10V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>-9.1<br>-7.2<br>A<br>Continuous Drain Current (Note 6) VGS= -4.5V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>-7.8<br>-6.2<br>A<br>Continuous Drain Current (Note 7) VGS= -10V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>-10.1<br>-8<br>A<br>Continuous Drain Current (Note 7) VGS= -4.5V<br>Steady<br>State<br>TA= +25°C<br>TA= +70°C<br>ID<br>-8.8<br>-7<br>A<br>Pulsed Drain Current(10μs Pulse,DutyCycle = 1%)<br>IDM<br>-100<br>A<br>Avalanche Current(Note 8)<br>IAS<br>-22<br>A<br>Avalanche Energy (Note 8)<br>EAS<br>242<br>mJ<br>~~eeee~~<br>~~ee Ges~~<br>~~es es~~<br>~~ee~~<br>~~ee eee~~<br>~~es ee~~<br>~~ee~~<br>~~ee ee~~<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee Ge~~<br>~~es~~<br>~~es~~<br>~~GO~~<br>~~QO~~|
||
|**Thermal Characteristics**|
||
|**Characteristic**<br>**Symbol**<br>**Value**<br>**Units**|
|Total Power Dissipation(Note 6)<br>PD<br>1.45<br>W|
|Thermal Resistance,Junction to Ambient(Note 6)<br>RθJA<br>88<br>°C/W|
|Total Power Dissipation(Note 7)<br>PD<br>1.82<br>W|
|Thermal Resistance,Junction to Ambient(Note 7)<br>RθJA<br>70<br>°C/W|
|Thermal Resistance,Junction to Case(Note 7)<br>RθJc<br>7.6<br>°C/W|
|Operatingand Storage Temperature Range<br>TJ,TSTG<br>-55 to +150<br>°C|
||
|**Electrical Characteristics** (@TA= +25°C, unless otherwise specified.)|
||
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Test Condition**<br>**OFF CHARACTERISTICS**(Note 9)<br>Drain-Source Breakdown Voltage<br>BVDSS<br>-40<br><br><br>V<br>VGS= 0V,ID= -250μA<br>Zero Gate Voltage Drain Current<br>IDSS<br><br><br>-1<br>μA<br>VDS= -40V,VGS= 0V<br>Gate-Source Leakage<br>IGSS<br><br><br>100<br>nA<br>VGS=25V,VDS= 0V<br>**ON CHARACTERISTICS**(Note 9)<br>Gate Threshold Voltage<br>VGS(th)<br>-1.5<br>-2<br>-2.5<br>V<br>VDS= VGS,ID= -250μA<br>Static Drain-Source On-Resistance<br>RDS(ON)<br><br>7<br>11<br>mΩ<br>VGS= -10V,ID= -9.8A<br><br>9<br>15<br>VGS= -4.5V,ID= -9.8A<br>Forward Transfer Admittance<br>|Yfs|<br><br>26<br><br>S<br>VDS= -20V,ID= -9.8A<br>Diode Forward Voltage(Note 6)<br>VSD<br><br>-0.7<br>-1<br>V<br>VGS= 0V,IS= -1A<br>**DYNAMIC CHARACTERISTICS**(Note 10)<br>Input Capacitance<br>Ciss<br><br>4,234<br><br>pF<br>VDS= -20V, VGS= 0V<br>f = 1MHz<br>Output Capacitance<br>Coss<br><br>1,036<br><br>Reverse Transfer Capacitance<br>Crss<br><br>526<br><br>Gate Resistance<br>RG<br><br>7.77<br><br>Ω<br>VDS= 0V,VGS= 0V,f = 1MHz<br>Total Gate Charge<br>Qg<br><br>47.5<br><br>nC<br>VDS= -20V, VGS= -5V<br>ID= -9.8A<br>Gate-Source Charge<br>Qgs<br><br>14.2<br><br>Gate-Drain Charge<br>Qgd<br><br>13.5<br><br>Turn-On DelayTime<br>tD(on)<br><br>13.2<br><br>nS<br>VGS= -10V, VDD= -20V, RG= 6Ω,<br>ID= -1A, RL= 20Ω<br>Turn-On Rise Time<br>tr<br><br>10<br><br>Turn-Off DelayTime<br>tD(off)<br><br>302.7<br><br>Turn-Off Fall Time<br>tf<br><br>137.9<br><br>~~PO~~<br>~~ef~~<br>~~ef~~<br>~~ff~~<br>~~Ne~~<br>~~eenD~~<br>~~I (OD OU~~<br>~~(I(~~<br>~~ee~~<br>~~ee~~<br>~~RD~~<br>~~I(UDOO (O(n~~<br>~~—_——~~<br>~~ee~~<br>~~—— ee~~<br>~~————~~<br>~~ee~~|
|Notes:<br>6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.|



7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 

- 8 .UIS in production with L = 1mH, TJ = +25°C 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to production testing. 

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30.0  30<br>-VGS=4.0V<br>25.0  -V GS =3.5V 25<br>20.0  [toTIS -VGS=4.5V 20 cesclnae pS25<br>15.0  -VGS=10V 15<br>10.0  —— -V GS =3.0V 10 BRGSG0 (S30<br>5.0  V =_— 5 Banus? inne<br>yo Saeen) Anne<br>-VGS=2.5V<br>0.0  ~ 0 D<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>-VDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics<br>0.02 0.02 -VGS= 4.5V TA = 125C TA = 150C<br>0.015 0.015<br>TA = 85C<br>0.01 ee 0.01 T A  = 25C<br>TA = -55C<br>0.005 0.005<br>0 PCE 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN SOURCE CURRENT -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 0.02<br>1.4 0.016 -V-IDGS=5.0A=4.5V<br>eee ae<br>1.2 0.012<br>CoA) =  Ce<br>1 0.008 VGS=10V<br>ID=10A<br>0.8 Cer 0.004 Ce<br>PZannail PTL<br>0.6 FETT EEL 0 LL EEELL<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5  On-Resistance Variation with Temperature Fig. 6  On-Resistance Variation with Temperature<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>R<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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2.4 30<br>1.62 SSSS 2520 ft|ELLrept<br>1.20.8 aaaae“ 1510 tLBae<br>0.4 5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10000 10<br>er f=1MHz<br>SGeS OOGO(| /<br>C iss<br>| O_O 8 /<br>6<br>Coss<br>SLE /<br>1000<br>DON<br>ae |<br>C rss 4<br>es ee Z|<br>Po Sf<br>es es es |<br>2<br>FP | | fl a<br>100 0<br>0 5 10 15 20 25 30 0 20 40 60 80 100 120<br>VFig. 9 Typical Junction CapacitanceDS , DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Fig. 10 Gate-Charge Characteristics<br>100 600 90<br>——-- RDS(ON) = -ID(A) @<br>Limited PW=10µs 80<br>aereeNN| LINOSOSHDAB TTT 500 70<br>10 EAS<br>400 60<br>-ID(A) @ DC<br>D7 OARNAORUAN 50<br>-ID(A) @PW PISS =10s NE OA 300<br>1 -ID(A) @PW=1s 40<br>ee -ID(A) @PW=100ms LT ANIN NUNES IAS<br>200 30<br>-I D (A) @P W =10ms<br>0.1 Ey T T J(MAX)  A = 25 = 150 C  C ee0ee -ID(A) @P TRS W=100µs es tt 100 2010<br>Single Pulse<br>0.01 ee ee 0 0<br>0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0<br>-VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Single-Pulse Avalanche TestedINDUCTOR (mH)<br>Fig. 11 SOA, Safe Operation Area<br>D<br>W<br>-I<br>(A) @P<br>=1ms<br>D<br>, DRAIN CURRENT (A)<br>-I<br>AS<br>AS<br>, AVALANCHE ENERGY (mJ) I<br>E , AVALANCHE CURRENT (A)<br>, SOURCE CURRENT (A)<br>-I<br>S<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, GATE THRESHOLD VOLTAGE (V)<br>-V<br>GS(TH)<br>, JUNCTION CAPACITANCE (pF)<br>CT<br>**----- End of picture text -----**<br>


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## 'onmeceorRrepeorRAT 

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1<br>D = 0.9<br>Bee D = 0.7<br>D = 0.5 [or] I<br>by [COS] ttt<br>0.1 LEa D = 0.3 ee20=ce ||<br>Bo D = 0.1 a |<br>—S—Sa dDsks Ss eee<br>ELA D = 0.05<br>a a 7 |<br>D = 0.02<br>Beara | an GRAGTTSS-CAAETII|MUOOITLIGE CRITI ROOT ORT<br>0.01 a a 2<br>BEE D = 0.01<br>tt D = 0.005 R JA (t) = r(t) * R JA ail<br>PA eh R JA  = 75°C/W TTT<br>a | LA<br>Duty Cycle, D = t1/ t2<br>D = Single Pulse<br>0.001<br>0.001 0.01 0.1 1 10 100 1000 10000<br>t1, PULSE DURATION TIME (sec)<br>Figure 13 Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMP4015SSSQ** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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SO-8<br>SO-8<br>Dim  Min  Max<br>A  -  1.75<br>E1 E A1  0.10  0.20<br>Gauge Plane A2  1.30  1.50<br>A1 L Seating Plane A3  0.15  0.25<br>b  0.3 0.5<br>Detail ‘A’ D  4.85 4.95<br>E  5.90 6.10<br>bed<br>h 7°~9° E1  3.85 3.95<br>45° e  1.27 Typ<br>Detail ‘A’ h  -  0.35<br>A2 A A3 L  0.62  0.82<br> 0°  8°<br>e b 7s.<br>All Dimensions in mm<br>D<br>0.254<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**SO-8** 

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X<br>C1<br>5 7 4<br>C2<br>Y<br>TAG i<br>**----- End of picture text -----**<br>


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Dimensions  Value (in mm)<br>X  0.60<br>Y  1.55<br>C1  5.4<br>C2  1.27<br>**----- End of picture text -----**<br>


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**DMP4015SSSQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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DMP4015SSSQ Document number: DS36682  Rev. 4 - 2 

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- [View this product on Novapart](https://novapart.co/products/DMP4015SSSQ-13/power-mosfet-p-channel-40-v-91-a-7000-ohm-soic)
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- [Supplier page](https://es.farnell.com/diodes-inc/dmp4015sssq-13/mosfet-p-ch-40v-9-1a-soic/dp/3127367RL)
---

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