# Power MOSFET, P Channel, 40 V, 8.5 A, 7000 µohm, PowerDI 5060, Surface Mount

![Product image](https://novapart.co/image/farnell:3943795/)

**URL**: https://novapart.co/products/DMP4015SPSQ-13/power-mosfet-p-channel-40-v-85-a-7000-ohm-powerdi
**SKU**: DMP4015SPSQ-13
**Manufacturer**: DIODES INC.
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2780
**Stock**: 25+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerDI 5060 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.5A |
| Drain Source On State Resistance | 7000µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3943795/)

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## **DMP4015SPSQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8** 

|**Product Summary**<br>**Features and Benefits**<br>~~——~~|**Product Summary**<br>**Features and Benefits**<br>~~——~~|**Product Summary**<br>**Features and Benefits**<br>~~——~~|**Product Summary**<br>**Features and Benefits**<br>~~——~~|**Product Summary**<br>**Features and Benefits**<br>~~——~~|**Product Summary**<br>**Features and Benefits**<br>~~——~~|
|---|---|---|---|---|---|
||||**ID**||100% Unclamped Inductive Switch (UIS) Test in Production|
||**BVDSS**|**RDS(ON)Max**|**TA = +25°C**||Low On-Resistance|
||||||Fast Switching Speed|
||-40V|11mΩ @ VGS= -10V|-11A||**Lead-Free Finish; RoHS Compliant (Notes 1 & 2)**|
|||15mΩ @ VGS= -4.5V|-10A||**Halogen and Antimony Free. “Green” Device (Note 3)**|



- **The DMP4015SPSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.** 

## **Description and Applications** 

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: 

**https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

   - Case: PowerDI[®] 5060-8 

- DC-DC Converters 

- Power Management Functions 

- Analog Switch 

- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Finish—100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 

- Weight: 0.097 grams (Approximate) 

**PowerDI5060-8** 

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D<br>S D<br>S D<br>G<br>S D<br>G D S<br>Top View  Internal Schematic<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMP4015SPSQ-13|PowerDI5060-8|2,500/Tape &Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

_PowerDI is a registered trademark of Diodes Incorporated._ 

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**DMP4015SPSQ** 

## **Marking Information** 

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D D D D<br>       = Manufacturer’s Marking<br>P4015SP P4015SP = Product Type Marking Code<br>YYWW = Date Code Marking<br>YY WW YY or YY= Year (ex: 21 = 2021)<br>WW = Week (01 to 53)<br>S S S G<br>**----- End of picture text -----**<br>


## **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

**Characteristic Symbol Value Unit** Drain-Source Voltage VDSS -40 V ~~i~~ Gate-Source Voltage Steady State TTAA = +25°C  = +70°C VGSSID -8.5 -6.8 ±25 ~~—~~ V A Continuous Drain Current (Note 5) VGS = -10V ~~ee~~ t < 10s TTAA = +25°C  = +70°C ID -13.0 -10.5 A ~~ee~~ Steady TA ~~ee~~ = +25°C ~~eee~~ ID -11.0 A State TA = +70°C -8.7 Continuous Drain Current (Note 6) VGS = -10V ~~ee~~ ~~**a**~~ t < 10s ~~[ee]~~ TTAA = +25°C  = +70°C ~~ee~~ ID ~~ee~~ -17.0 -13.5 ~~ee~~ A ~~CO~~ Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -100 A Maximum Body Diode Continuous Current (Note 6) IS -11 A ~~i~~ Avalanche Current (Note 8) IAS -22 A Avalanche Energy (Note 8) EAS 242 mJ 

## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Unit**|
|Total Power Dissipation (Note 5)|TA= +25°C|PD|1.3|W|
||TA= +70°C||0.8||
|Thermal Resistance, Junction to Ambient (Note 5)|Steady State|RθJA|96.4|°C/W|
||t< 10s||40.6|°C/W|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|2.1|W|
||TA= +70°C||1.4||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|55.0|°C/W|
||t< 10s||24.0|°C/W|
|Thermal Resistance,Junction to Case(Note 7)||RθJC|4.15|°C/W|
|Operatingand Storage Temperature Range||TJ, TSTG|-55 to +150|°C|



- Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 

   6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 

7. Thermal resistance from junction to soldering point (on the exposed drain pad). 

8. UIS in production with L = 0.1mH, TJ = +25°C. 

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**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~|
|**OFF CHARACTERISTICS**(Note 9)<br>~~ee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|-40<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|VGS= 0V,ID= -250μA<br>~~ee~~|
|Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|-1<br>~~ee~~|µA<br>~~ee~~|VDS= -40V,VGS= 0V<br>~~ee~~|
|Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|VGS=25V,VDS= 0V<br>~~ee~~|
|**ON CHARACTERISTICS**(Note 9)<br>~~UN UD(OD(OO(0~~|||||||
|Gate Threshold Voltage<br>~~ID~~|VGS(TH)<br>~~ID~~<br>~~SS~~|-1.5<br>~~ID~~<br>~~UN UD~~<br>~~SS~~|-2<br>~~ID~~<br>~~UD~~<br>~~SS ———~~|-2.5<br>~~ID~~<br>~~(OD~~<br>~~———~~|V<br>~~ID~~<br>~~(OO~~|VDS= VGS,ID= -250μA<br>~~ID~~<br>~~(0~~|
|Static Drain-Source On-Resistance<br>~~——~~|RDS(ON)<br>~~——~~<br>~~SS~~|—<br>~~UN UD~~<br>~~——~~<br>~~SS~~|7<br>~~UD~~<br>~~——~~<br>~~SS ———~~|11<br>~~(OD ~~<br>~~——~~<br>~~———~~|mΩ<br> ~~(OO ~~<br>~~——~~|VGS= -10V,ID= -9.8A<br> ~~(0~~<br>~~——~~|
|||—<br>~~——~~<br>~~SS~~|9<br>~~——~~<br>~~SS ———~~|15<br>~~——~~<br>~~———~~||VGS= -4.5V,ID= -9.8A<br>~~——~~|
|Forward Transfer Admittance<br>~~——~~||Yfs|<br>~~——~~<br>~~SS~~<br>~~(UN~~|—<br>~~——~~<br>~~SS~~<br>~~(UN UD~~|26<br>~~——~~<br>~~SS ———~~<br>~~UD~~|—<br>~~——~~<br>~~———~~<br>~~(OUD~~|S<br>~~——~~<br>~~(OO~~|VDS= -20V,ID= -9.8A<br>~~——~~<br>~~(OO~~|
|Diode Forward Voltage<br>~~nT~~|VSD<br>~~SS~~<br>~~nT~~<br>~~(UN~~|—<br>~~SS~~<br>~~nT~~<br>~~(UN UD~~|-0.7<br>~~SS ———~~<br>~~nT~~<br>~~UD~~|-1<br>~~———~~<br>~~nT~~<br>~~(OUD~~|V<br>~~nT~~<br>~~(OO~~|VGS= 0V,IS= -1A<br>~~nT~~<br>~~(OO~~|
|**DYNAMIC CHARACTERISTICS**(Note 10)<br>~~(UN UD(OUD (OO (OO~~<br>~~eeeA~~<br>~~ee~~|||||||
|Input Capacitance<br>~~es~~|Ciss<br>~~es~~|—<br>~~es~~|4,234<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee~~|pF<br>~~es~~<br>~~A~~|VDS= -20V, VGS= 0V<br>f = 1MHz<br>~~es~~<br>~~ee~~|
|Output Capacitance<br>~~es~~|Coss<br>~~es~~|—<br>~~es~~|1,036<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee~~|||
|Reverse Transfer Capacitance<br>~~es~~|Crss<br>~~es~~|—<br>~~es~~|526<br>~~es~~<br>~~eee~~|—<br>~~es~~<br>~~eee~~|||
|Gate Resistance<br>~~Ce~~|RG<br>~~a~~|—<br>~~ee~~|7.77<br>~~eee~~<br>~~ee~~|—<br>~~eee ~~<br>~~ee~~|Ω<br> ~~A~~|VDS= 0V,VGS= 0V,f = 1MHz<br>~~ee~~|
|Total Gate Charge<br>~~Ce~~|Qg<br>~~a~~|—<br>~~ee~~|47.5<br>~~ee~~|—<br>~~ee~~|nC<br>~~ee~~|VDS= -20V, VGS= -5V<br>ID= -9.8A<br>~~ee~~|
|Gate-Source Charge<br>~~———~~<br>~~Ce~~|Qgs<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~ee~~|14.2<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~|||
|Gate-Drain Charge<br>~~———~~<br>~~Ce~~<br>~~———~~|Qgd<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~ee~~|13.5<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~———~~<br>~~Ce~~<br>~~———~~|tD(ON)<br>~~———~~<br>~~a~~|—<br>~~———~~<br>~~ee~~|13.2<br>~~———~~<br>~~ee~~|—<br>~~———~~<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~|VGS= -10V, VDD= -20V, RG= 6Ω,<br>ID= -1A, RL= 20Ω<br>~~ee~~|
|Turn-On Rise Time<br>~~Ce~~<br>~~———~~|tR<br>~~a ~~|—<br> ~~ee~~|10<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|||
|Turn-Off DelayTime<br>~~———~~|tD(OFF)|—|302.7|—<br>~~ee~~|||
|Turn-Off Fall Time<br>~~———~~|tF|—|137.9|—<br>~~ee~~|||



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30  30<br>-VGS=4.0V<br>25 -V GS =3.5V 25<br>20 1 aae a icee 20<br>-VGS=4.5V<br>15 -VGS=10V 15<br>Gilneas San<br>— Gil<br>10 -V GS =3.0V 10<br>5 Pp= o 5 Sanne) Anne<br>0 VO 0<br>0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>-VFig. 1 Typical Output CharacteristicsDS, DRAIN -SOURCE VOLTAGE(V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 2 Typical Transfer Characteristics<br>0.02 0.02 -VGS= 4.5V TA = 125C TA = 150C<br>0.015 0.015<br>TA = 85C<br>0.01 SaERES 0.01 T A  = 25C<br>TA = -55C<br>0.005 — 0.005<br>0 Co 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN SOURCE CURRENT (A) -ID, DRAIN SOURCE CURRENT (A)<br>Fig. 3  Typical On-Resistance vs.  Fig. 4  Typical On-Resistance vs.<br>Drain Current and Gate Voltage  Drain Current and Temperature<br>1.6 0.02<br>1.4 9. 8A 0.016 -V-IDGS= 5.0A9.8A= 4.5V<br>Tey TT<br>1.2 0.012<br>CTA 9.8A 6 CTT Ler<br>1 0.008 VGS = 10V<br>ID = 10A9.8A<br>0.8 A 0.004 pe oaeade<br>Atti) =  FE<br>0.6 0<br>-50 PTET -25TJ, JUNCTION TEMPERATURE (0 25 TTT 50 75 100 C)125 150 -50 LET Fig. 6  On-Resistance Variation with Temperature-25TJ, JUNCTION TEMPERATURE (0 25 50  E 75 100 C)125 150<br>Fig. 5  On-Resistance Variation with Temperature<br>)<br>,DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>(Normalized)<br>, DRAIN-SOURCE ON-RESISTANCE<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>D<br>-I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>)<br>, DRAIN-SOURCE ON-RESISTANCE(<br>DS(ON)<br>R<br>, DRAIN CURRENT (A)<br>-I<br>D<br>**----- End of picture text -----**<br>


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2.41.62 TE SS CS 302520 aetty<br>1.2 15<br>Cocos | Ee Ho<br>0.8 10<br>Fit yyy |tye<br>0.4 5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>TA, AMBIENT TEMPERATURE ( ℃ 癈 ) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>10000 10000<br>f=1MHz TA =150癈 ℃<br>a ——— ——<br>C iss<br>——— 1000 —————— TA =125癈 ℃<br>Ce a= TA =85癈 ℃<br>100<br>Coss<br>2 __—<br>1000<br>——————— ————<br>ee ee C rss 10 ee ee ee ee<br>ee —— TA =25癈 ℃<br>ee —_———<——— re<br>1<br>ee ee =e<br>100 2 0.1 ————ee ee ee ee<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>VDS , DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE(V)<br>Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage<br>10 600 90<br>Starting Temperature (TJ) = 25癈 ℃<br>80<br>500<br>8 TITTY) Me 70<br>EAS<br>400 60<br>6<br>Tey Reet 50<br>300<br>40<br>4 IAS<br>PTYE TT) O 200 ARpe 30<br>20<br>2 wn4elit) 100 oeTee<br>10<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>0 20 40 60 80 100 120<br>INDUCTOR (mH)<br>Qg, TOTAL GATE CHARGE (nC) Fig. 12 Single-Pulse Avalanche Tested<br>Fig. 11 Gate-Charge Characteristics<br>T<br>, JUNCTION CAPACITANCE (pF)<br>C<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>, AVALANCHE ENERGY (mJ) ASI<br>EAS , AVALANCHE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>-V<br>, SOURCE CURRENT (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


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1 SSS SSS SSSSSS SSS<br>re D = 0.7<br>ee D = 0.5 a<br>Se<br>FHT D = 0.3 Nr ert<br>NTT<br>0.1 ee.a |<br>PS D = 0.1 a a lll<br>a D = 0.9<br>D = 0.05 RJA(t) = r(t)  * RJA<br>APEE A RJA =  9 76.4癈℃/W/W CocCo<br>D = 0.02<br>eI P(pk) LUT<br>Lr LI ETI t1 Hill<br>0.01<br>ee D = 0.01 ee | t2 eee<br>tT OH et TJ - TA = P  *  RJA(t) CoH<br>er D = 0.005 a Duty Cycle, D = t 1 /t 2 CoC<br>ee EE Co<br>DUT mounted on FR-4 PCB with<br>D = Single Pulse minimum recommended pad layout<br>0.001<br>0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 13 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **PowerDI5060-8** 

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PowerDI5060-8<br>D Dim  Min  Max  Typ<br>D1 Detail A A  0.90 1.10 1.00<br>0 ( 4X) A1  0.00  0.05  <br>b 0.33 0.51  0.41<br>c b2  0.200 0.350 0.273<br>A1 b3 0.40 0.80 0.60<br>c 0.230 0.330 0.277<br>E 1 E<br>D  5.15 BSC<br>e D1  4.70 5.10 4.90<br>i wn SSE D2  3.70 4.10 3.90<br>1 0 1 ( 4X) D3 3.90 4.30 4.10<br>E  6.15 BSC<br>E1  5.60 6.00 5.80<br>b ( 8X) e/2 E2  3.28 3.68 3.48<br>1 E3 3.99 4.39 4.19<br>L Se b2 ( 4X) =———— e 1.27 BSC<br>D3 K G 0.51  0.71  0.61<br>K  0.51  <br>A E 3 E 2 D2 b3 ( 4X) L1 L  00.1.5001  00.2.71 00 00.17.61 5<br>mae coos M ———<br>M  3.235 4.035 3.635<br>_ Detail A Tope M1 =rr M1  1.00 1.40 1.21<br>Θ  10°  12°  11°<br>G i L1 : ——— Θ1  6°  8°  7°<br>All Dimensions in mm<br>ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>PowerDI5060-8<br>X4 Dimensions  Value (in mm)<br>Y2 C  1.270<br>X3<br>G  0.660<br>Y3 Y1 G1  0.820<br>X  0.610<br>X1  4.100<br>X2  0.755<br>X3  4.420<br>Y5 X2 et X4  5.610<br>| Y4 X1 UL Y  1.270<br>Y7 Y1  0.600<br>1<br>Y2  1.020<br>Y3  0.295<br>C G1 Y4  1.825<br>Y6 Z — — ) Y5  3.810<br>Y6  0.180<br>Y7  6.610<br>Y( 4x)<br>tt X O0 G :a<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functionalsafety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes        products       are        provided       subject        to       Diodes’        Standard       Terms       and       Conditions       of       Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 

Copyright © 2021 Diodes Incorporated 

**www.diodes.com** 

8 of 8 **www.diodes.com** 

DMP4015SPSQ Document number: DS36681 Rev. 5 - 2 

September 2021 © Diodes Incorporated 



## Links

- [View this product on Novapart](https://novapart.co/products/DMP4015SPSQ-13/power-mosfet-p-channel-40-v-85-a-7000-ohm-powerdi)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/dmp4015spsq-13/mosfet-p-ch-40v-8-5a-powerdi-5060/dp/3943795)
---

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